KSC5803 KSC5803 High Voltage Color Display Horizontal Deflection Output (No Damper Diode) • • • • High Breakdown Voltage : BVCBO=1500V High Speed Switching : tF=0.1µs (Typ.) Wide S.O.A For C-Monitor(85KHz) TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 1500 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 800 V 6 IC Collector Current (DC) 12 V A ICP Collector Current (Pulse) 24 A PC Collector Dissipation (TC=25°C) 70 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES Parameter Collector Cut-off Current Test Condition VCE = 1400V, VBE=0 Min. Typ. Max. 1 Units mA ICBO Collector Cut-off Current VCE= 800V, IE = 0 10 µA IEBO Emitter Cut-off Current VEB = 4V, IC = 0 1 mA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 1A VCE = 5V, IC = 8A VCE(sat) Collector-Emitter Saturation Voltage IC = 8A, IB = 2A 3 VBE(sat) Base-Emitter Saturation Voltage IC = 8A, IB = 2A 1.5 V tSTG Storage Time 4 µs tF Fall Time VCC = 200V, IC = 7A IB1 = 1.4A, IB2= - 2.8A RL = 28.6Ω 0.3 µs ©2000 Fairchild Semiconductor International 15 5.5 40 8.5 V Rev. A, February 2000 KSC5803 Typical Characteristics 100 12 10 8 125℃ hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT VCE=5V IB=2.0A IB=1.8A IB=1.6A IB =1.4A IB =1.2A IB =1.0A IB=800mA IB=600mA 6 IB=400mA 4 IB=200mA 75℃ 25℃ -25℃ 10 2 1 0.1 0 0 1 2 3 4 5 6 7 8 9 10 1 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic IC=3IB VCE(sat)[mV], SATURATION VOLTAGE VCE(sat)[mV], SATURATION VOLTAGE Figure 2. DC current Gain 10 2 1 0.9 0.8 -25℃ 0.7 25℃ 0.6 75℃ 0.5 125℃ 0.4 0.1 1 IC=3IB 10 125℃ 3 75℃ 25℃ -25℃ 10 10 10 4 2 1 0.1 1 IC[A], COLLECTOR CURRENT Figure 4. Collector-Emitter Saturation Voltage 1 4 12 IC=5IB VCE=5V IC[A], COLLECTOR CURRENT VCE(sat)[mV], SATURATION VOLTAGE 10 IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage 10 10 125℃ 10 75℃ 25℃ 3 -25℃ 10 10 2 1 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 5. Collector-Emitter Saturation Voltage 2 ©2000 Fairchild Semiconductor International 10 8 6 4 2 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VBE[V], BASE EMITTER VOLTAGE Figure 6. Base-Emitter On Voltage Rev. A, February 2000 KSC5803 Typical Characteristics (Continued) 10 100 RESISTIVE Vcc=200V IC[A], COLLECTOR CURRENT tstg[µ s], STORAGE TIME tf[µ s], FALL TIME Ic=7A Ib1=1.4A tstg 1 tf 10µ s 10 DC 100ms 100µ s 10ms 1ms 1 0.1 SINGLE PULSE 0.1 0.1 0.01 1 10 Tc=25℃ 1 10 100 1000 V CE[V], COLLECTOR-EMITTER VOLTAGE -IB2[A], BASE CURRENT Figure 7. Switching Time Figure 8. Safe Operating Area 100 80 10 Ib2=-1AConst (at Ic>5A) 1 Ic=5Ib1=5Ib2 PD[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT 70 60 50 40 30 20 10 L=500µ H SINGLE PULSE 0.1 0 10 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 9. Reverse Bias Safe Operating Area ©2000 Fairchild Semiconductor International 0 25 50 75 100 125 150 TC[℃], CASE TEMPERATURE Figure 10. Power Derating Rev. A, February 2000 KSC5803 Package Demensions TO-3PF 4.50 ±0.20 5.50 ±0.20 15.50 ±0.20 2.00 ±0.20 ° 22.00 ±0.20 23.00 ±0.20 10 1.50 ±0.20 16.50 ±0.20 2.50 ±0.20 0.85 ±0.03 2.00 ±0.20 14.50 ±0.20 16.50 ±0.20 2.00 ±0.20 4.00 ±0.20 3.30 ±0.20 +0.20 0.75 –0.10 2.00 ±0.20 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] +0.20 0.90 –0.10 5.50 ±0.20 26.50 ±0.20 10.00 ±0.20 (1.50) 2.00 ±0.20 2.00 ±0.20 14.80 ±0.20 3.00 ±0.20 ø3.60 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E