KSC5042M KSC5042M High Voltage Switchihg Dynamic Focus Application • • • • High Collector-Emitter Breakdown Voltage : BVCEO=900V Small Cob =2.8pF (Typ.) Wide S.O.A High reliability TO-126 1 1. Emitter 2.Collector 3.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 1500 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 900 5 V V IC Collector Current (DC) 100 mA ICP Collector Current (Pulse) 300 mA PC Collector Dissipation (TC=25°C) TJ TSTG 4 W Junction Temperature 150 °C Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = 1mA, IE = 0 BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 900 BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 5 ICBO Collector Cut-off Current VCB = 900V, IE = 0 IEBO Emitter Cut-off Current VEB = 4V, IC = 0 hFE DC Current Gain VCE = 5V, IC = 10mA VCE (sat) Collector-Emitter Saturation Voltage VBE (sat) Base-Emitter Saturation Voltage Cob Output Capacitance VCB = 100V, f = 1MHz ©2002 Fairchild Semiconductor Corporation Min. 1500 Typ. Max. Units V V V 10 µA 10 µA IC = 20mA, IB = 4mA 5 V IC = 20mA, IB = 4mA 2 30 2.8 V pF Rev. B, December 2002 KSC5042M Typical Characteristics 100 9mA IB = 10mA 8mA 7mA 6mA 5mA VCE = 5V 100 80 4mA 70 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 90 3mA 60 2mA 50 IB = 1mA 40 30 20 10 10 0 1 0 1 2 3 4 5 6 7 8 9 10 1 10 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC current Gain 10 f = 1MHz IC = 5 IB IC[A], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 VBE(sat) 1 VCE(sat) 0.1 10 1 0.01 1 10 0.1 100 1 IC[A], COLLECTOR CURRENT 10 100 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector-Base Capacitance 8 IC(Pulse) PC[W], POWER DISSIPATION s s s 0µ 50 s 1m ICMAX ms 10 D.C IC[mA], COLLECTOR CURRENT 0µ 10 0µ 20 100 10 6 O TC = 25 C 4 O Ta = 25 C 2 0 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2002 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. B, December 2002 KSC5042M Package Dimensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B, December 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1