DDTD (xxxx) C NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • Mechanical Data • • Epitaxial Planar Die Construction Complementary PNP Types Available (DDTB) Built-In Biasing Resistors, R1, R2 Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2 and 3) Part Number DDTD113EC DDTD123EC DDTD143EC DDTD114EC DDTD122JC DDTD113ZC DDTD123YC DDTD133HC DDTD123TC DDTD143TC DDTD114TC DDTD114GC R1 (NOM) 1K 2.2K 4.7K 10K 0.22K 1K 2.2K 3.3K 2.2K 4.7K 10K 0 R2 (NOM) 1K 2.2K 4.7K 10K 4.7K 10K 10K 10K OPEN OPEN OPEN 10K • • • Marking N60 N61 N62 N63 N64 N65 N66 N67 N69 N70 N71 N72 • • • Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating) Solderable per MIL-STD-202, Method 208 Marking Information: See Table and Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) OUT 3 C B R1 R2 E 1 IN Top View Maximum Ratings 2 GND(0) Package Pin Out Configuration @TA = 25°C unless otherwise specified Characteristic Supply Voltage, (3) to (2) Input Voltage, (1) to (2) Input Voltage, (2) to (1) Output Current Symbol VCC DDTD113EC DDTD123EC DDTD143EC DDTD114EC DDTD122JC DDTD113ZC DDTD123YC DDTD133HC DDTD123TC DDTD143TC DDTD114TC DDTD114GC All Value 50 -10 to +10 -10 to +12 -10 to +30 -10 to +40 -5 to +5 -5 to +10 -5 to +12 -6 to +20 Unit V VEBO(MAX) 5 V IC 500 mA Symbol PD RθJA TJ, TSTG Value 200 625 -55 to +150 Unit mW °C/W °C VIN V Thermal Characteristics Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Notes: 1. 2. 3. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. No purposefully added lead. Halogen and Antimony Free. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DDTD (xxxx) C Document number: DS30384 Rev. 10 - 2 1 of 4 www.diodes.com January 2009 © Diodes Incorporated DDTD (xxxx) C Electrical Characteristics - R1, R2 Types Characteristic Input Voltage Symbol DDTD113EC DDTD123EC DDTD143EC DDTD114EC DDTD122JC DDTD113ZC DDTD123YC DDTD133HC DDTD113EC DDTD123EC DDTD143EC DDTD114EC DDTD122JC DDTD113ZC DDTD123YC DDTD133HC Output Voltage Input Current DDTD113EC DDTD123EC DDTD143EC DDTD114EC DDTD122JC DDTD113ZC DDTD123YC DDTD133HC Output Current DC Current Gain @TA = 25°C unless otherwise specified DDTD113EC DDTD123EC DDTD143EC DDTD114EC DDTD122JC DDTD113ZC DDTD123YC DDTD133HC Input Resistor Tolerance Resistance Ratio Tolerance Gain-Bandwidth Product* Vl(OFF) Min 0.5 0.5 0.5 0.5 0.5 0.3 0.3 0.3 Emitter-Base Breakdown Voltage DDTD123TC DDTD143TC DDTD114TC DDTD114GC Collector Cutoff Current Emitter Cutoff Current DDTD123TC DDTD143TC DDTD114TC DDTD114GC Collector-Emitter Saturation Voltage DC Current Transfer Ratio Bias Resistor Tolerance Gain-Bandwidth Product* Unit ⎯ ⎯ V 3.0 3.0 3.0 3.0 3.0 2.0 2.0 2.0 ⎯ ⎯ VO(ON) ⎯ ⎯ Il ⎯ ⎯ IO(OFF) ΔR1 Δ(R2/R1) ⎯ 33 39 47 56 47 56 56 56 -30 -20 fT ⎯ Gl VO = 0.3V, IO = 20mA VO = 0.3V, IO = 20mA VO = 0.3V, IO = 20mA VO = 0.3V, IO = 10mA VO = 0.3V, IO = 30mA VO = 0.3V, IO = 20mA VO = 0.3V, IO = 20mA VO = 0.3V, IO = 20mA IO/Il = -50mA/-2.5mA VI = 5V ⎯ μA VCC = 50V, VI = 0V ⎯ ⎯ ⎯ VO = 5V, IO = 50mA ⎯ ⎯ +30 +20 200 ⎯ ⎯ ⎯ VCE = 10V, IE = 5mA, MHz f = 100MHz % % @TA = 25°C unless otherwise specified Typ ⎯ ⎯ Max ⎯ ⎯ BVEBO 5 ⎯ ⎯ ICBO ⎯ ΔR1 or ΔR2 ⎯ ⎯ ⎯ ⎯ 300 ⎯ 100 100 100 56 -30 ⎯ 250 250 250 ⎯ ⎯ 0.5 0.5 0.5 0.5 580 0.3 600 600 600 ⎯ +30 fT ⎯ 200 ⎯ hFE V VCC = 5V, IO = 100μA mA Min 50 40 IEBO V Test Condition 0.3V 7.2 3.8 1.8 0.88 28 7.2 3.6 2.4 0.5 Symbol BVCBO BVCEO VCE(SAT) DDTD123TC DDTD143TC DDTD114TC DDTD114GC Max Vl(ON) Electrical Characteristics - R1 Only, R2 Only Types Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Typ ⎯ Unit Test Condition V IC = 50μA V IC = 1mA IE = 50μA IE = 50μA V IE = 50μA IE = 720μA μA VCB = 50V μA VEB = 4V V IC = 50mA, IB = 2.5mA ⎯ IC = 50mA, VCE = 5V ⎯ VCE = 10V, IE = -5mA, MHz f = 100MHz % * Transistor - For Reference Only DDTD (xxxx) C Document number: DS30384 Rev. 10 - 2 2 of 4 www.diodes.com January 2009 © Diodes Incorporated DDTD (xxxx) C Ordering Information (Note 4) Part Number DDTD113EC-7-F DDTD123EC-7-F DDTD143EC-7-F DDTD114EC-7-F DDTD122JC-7-F DDTD113ZC-7-F DDTD123YC-7-F DDTD133HC-7-F DDTD123TC-7-F DDTD143TC-7-F DDTD114TC-7-F DDTD114GC-7-F Notes: Case SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 Packaging 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Nxx Date Code Key Year Code 2002 N Month Code Jan 1 2003 P 2004 R Feb 2 2005 S Mar 3 YM Marking Information 2006 T Apr 4 2007 U May 5 Nxx = Product Type Marking Code (See Page 1) YM = Date Code Marking Y = Year (ex: T = 2002) M = Month (ex: 9 = September) 2008 V Jun 6 2009 W Jul 7 2010 X Aug 8 2011 Y 2012 Z Sep 9 2013 A Oct O 2014 B Nov N 2015 C Dec D Package Outline Dimensions A B C H K M K1 D J F L G SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm Suggested Pad Layout Y Z C X DDTD (xxxx) C Document number: DS30384 Rev. 10 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 3 of 4 www.diodes.com January 2009 © Diodes Incorporated DDTD (xxxx) C IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DDTD (xxxx) C Document number: DS30384 Rev. 10 - 2 4 of 4 www.diodes.com January 2009 © Diodes Incorporated