DIODES DDTD113ZC

DDTD (xxxx) C
NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR
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Features
•
•
•
•
•
Mechanical Data
•
•
Epitaxial Planar Die Construction
Complementary PNP Types Available (DDTB)
Built-In Biasing Resistors, R1, R2
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2 and 3)
Part Number
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
R1 (NOM)
1K
2.2K
4.7K
10K
0.22K
1K
2.2K
3.3K
2.2K
4.7K
10K
0
R2 (NOM)
1K
2.2K
4.7K
10K
4.7K
10K
10K
10K
OPEN
OPEN
OPEN
10K
•
•
•
Marking
N60
N61
N62
N63
N64
N65
N66
N67
N69
N70
N71
N72
•
•
•
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound,
Note 3. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
Marking Information: See Table and Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
OUT
3
C
B
R1
R2
E
1
IN
Top View
Maximum Ratings
2
GND(0)
Package Pin Out Configuration
@TA = 25°C unless otherwise specified
Characteristic
Supply Voltage, (3) to (2)
Input Voltage, (1) to (2)
Input Voltage, (2) to (1)
Output Current
Symbol
VCC
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
All
Value
50
-10 to +10
-10 to +12
-10 to +30
-10 to +40
-5 to +5
-5 to +10
-5 to +12
-6 to +20
Unit
V
VEBO(MAX)
5
V
IC
500
mA
Symbol
PD
RθJA
TJ, TSTG
Value
200
625
-55 to +150
Unit
mW
°C/W
°C
VIN
V
Thermal Characteristics
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Notes:
1.
2.
3.
Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
No purposefully added lead. Halogen and Antimony Free.
Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DDTD (xxxx) C
Document number: DS30384 Rev. 10 - 2
1 of 4
www.diodes.com
January 2009
© Diodes Incorporated
DDTD (xxxx) C
Electrical Characteristics - R1, R2 Types
Characteristic
Input Voltage
Symbol
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
Output Voltage
Input Current
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
Output Current
DC Current Gain
@TA = 25°C unless otherwise specified
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
Input Resistor Tolerance
Resistance Ratio Tolerance
Gain-Bandwidth Product*
Vl(OFF)
Min
0.5
0.5
0.5
0.5
0.5
0.3
0.3
0.3
Emitter-Base Breakdown Voltage
DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
Collector Cutoff Current
Emitter Cutoff Current
DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Bias Resistor Tolerance
Gain-Bandwidth Product*
Unit
⎯
⎯
V
3.0
3.0
3.0
3.0
3.0
2.0
2.0
2.0
⎯
⎯
VO(ON)
⎯
⎯
Il
⎯
⎯
IO(OFF)
ΔR1
Δ(R2/R1)
⎯
33
39
47
56
47
56
56
56
-30
-20
fT
⎯
Gl
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 10mA
VO = 0.3V, IO = 30mA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
IO/Il = -50mA/-2.5mA
VI = 5V
⎯
μA
VCC = 50V, VI = 0V
⎯
⎯
⎯
VO = 5V, IO = 50mA
⎯
⎯
+30
+20
200
⎯
⎯
⎯
VCE = 10V, IE = 5mA,
MHz
f = 100MHz
%
%
@TA = 25°C unless otherwise specified
Typ
⎯
⎯
Max
⎯
⎯
BVEBO
5
⎯
⎯
ICBO
⎯
ΔR1 or ΔR2
⎯
⎯
⎯
⎯
300
⎯
100
100
100
56
-30
⎯
250
250
250
⎯
⎯
0.5
0.5
0.5
0.5
580
0.3
600
600
600
⎯
+30
fT
⎯
200
⎯
hFE
V
VCC = 5V, IO = 100μA
mA
Min
50
40
IEBO
V
Test Condition
0.3V
7.2
3.8
1.8
0.88
28
7.2
3.6
2.4
0.5
Symbol
BVCBO
BVCEO
VCE(SAT)
DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
Max
Vl(ON)
Electrical Characteristics - R1 Only, R2 Only Types
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Typ
⎯
Unit
Test Condition
V
IC = 50μA
V
IC = 1mA
IE = 50μA
IE = 50μA
V
IE = 50μA
IE = 720μA
μA VCB = 50V
μA
VEB = 4V
V
IC = 50mA, IB = 2.5mA
⎯
IC = 50mA, VCE = 5V
⎯
VCE = 10V, IE = -5mA,
MHz
f = 100MHz
%
* Transistor - For Reference Only
DDTD (xxxx) C
Document number: DS30384 Rev. 10 - 2
2 of 4
www.diodes.com
January 2009
© Diodes Incorporated
DDTD (xxxx) C
Ordering Information
(Note 4)
Part Number
DDTD113EC-7-F
DDTD123EC-7-F
DDTD143EC-7-F
DDTD114EC-7-F
DDTD122JC-7-F
DDTD113ZC-7-F
DDTD123YC-7-F
DDTD133HC-7-F
DDTD123TC-7-F
DDTD143TC-7-F
DDTD114TC-7-F
DDTD114GC-7-F
Notes:
Case
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
Packaging
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Nxx
Date Code Key
Year
Code
2002
N
Month
Code
Jan
1
2003
P
2004
R
Feb
2
2005
S
Mar
3
YM
Marking Information
2006
T
Apr
4
2007
U
May
5
Nxx = Product Type Marking Code (See Page 1)
YM = Date Code Marking
Y = Year (ex: T = 2002)
M = Month (ex: 9 = September)
2008
V
Jun
6
2009
W
Jul
7
2010
X
Aug
8
2011
Y
2012
Z
Sep
9
2013
A
Oct
O
2014
B
Nov
N
2015
C
Dec
D
Package Outline Dimensions
A
B C
H
K
M
K1
D
J
F
L
G
SOT-23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
α
All Dimensions in mm
Suggested Pad Layout
Y
Z
C
X
DDTD (xxxx) C
Document number: DS30384 Rev. 10 - 2
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
E
3 of 4
www.diodes.com
January 2009
© Diodes Incorporated
DDTD (xxxx) C
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DDTD (xxxx) C
Document number: DS30384 Rev. 10 - 2
4 of 4
www.diodes.com
January 2009
© Diodes Incorporated