SPICE MODELS: DRDPB26W DRDN005W DRDN010W DRDNB16W DRDNB26W DRDP006W DRDPB16W DRD (xxxx) W Lead-free Green COMPLEX ARRAY FOR RELAY DRIVERS NEW PRODUCT Features • • • • Epitaxial Planar Die Construction One Transistor and One Switching Diode in One Package SOT-363 A Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) B C Mechanical Data • • • • • • • • Case: SOT-363 G Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C H K M Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 J L D Marking & Type Code Information: See Last Page Ordering Information: See Last Page 1K 1K 220 220 Max 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 α 0° 8° R2 R2 R1 (NOM) R2 (NOM) DRDNB16W DRDPB16W DRDNB26W DRDPB26W Min A All Dimensions in mm Weight: 0.008 grams (approx.) P/N Dim R1 R1 10K 10K 4.7K 4.7K DRDN010W/ DRDN005W Maximum Ratings, Total Device DRDP006W Characteristic Symbol Value Unit Pd 200 mW RθJA 625 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient Air (Note 3) Maximum Ratings, DRDN010W NPN Transistor Characteristic DRDPB16W/ DRDPB26W @ TA = 25°C unless otherwise specified Power Dissipation (Note 3) Operating and Storage and Temperature Range DRDNB16W/ DRDNB26W @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCEO 18 V Emitter-Base Voltage VEBO 5 V IC 1000 mA Collector Current (Note 3) Maximum Ratings, DRDN005W NPN Transistor Characteristic @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 4.0 V IC 500 mA Collector Current - Continuous (Note 3) Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http: //www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30573 Rev. 8 - 2 1 of 9 www.diodes.com DRD (xxxx) W Diodes Incorporated NEW PRODUCT Maximum Ratings, DRDP006W PNP Transistor Characteristic @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5.0 V IC -600 mA Collector Current (Note 3) Maximum Ratings, DRDNB16W Pre-Biased NPN Transistor Characteristic @ TA = 25°C unless otherwise specified Symbol Value Unit Supply Voltage VCC 50 V Input Voltage VIN -5 to +10 V IC 600 mA Output Current Maximum Ratings, DRDNB26W Pre-Biased NPN Transistor Characteristic @ TA = 25°C unless otherwise specified Symbol Value Unit Supply Voltage VCC 50 V Input Voltage VIN -5 to +5 V IC 600 mA Output Current Maximum Ratings, DRDPB16W Pre-Biased PNP Transistor Characteristic Symbol @ TA = 25°C unless otherwise specified Value Unit Supply Voltage VCC -50 V Input Voltage VIN +5 to -10 V IC 600 mA Output Current Maximum Ratings, DRDPB26W Pre-Biased PNP Transistor Characteristic @ TA = 25°C unless otherwise specified Symbol Value Unit Supply Voltage VCC -50 V Input Voltage VIN +5 to -5 V IC -600 mA Symbol Value Unit VRM 100 V VRRM VRWM VR 75 V VR(RMS) 53 V Forward Continuous Current (Note 3) IFM 500 mA Average Rectified Output Current (Note 3) IO 250 mA IFSM 4.0 2.0 A Output Current Maximum Ratings, Switching Diode @ TA = 25°C unless otherwise specified Characteristic Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Non-Repetitive Peak Forward Surge Current @ t = 1.0µs @ t = 1.0s DS30573 Rev. 8 - 2 2 of 9 www.diodes.com DRD (xxxx) W NEW PRODUCT Electrical Characteristics, DRDN010W NPN Transistor Characteristic @ TA = 25°C unless otherwise specified Symbol Min Max Unit hFE 150 800 IC = 100mA, VCE = 1V Collector-Emitter Saturation Voltage VCE(SAT) 0.5 V IC = 300mA, IB = 30mA Collector-Base Breakdown Voltage V(BR)CBO 45 V IC = 100µA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 18 V IC = 1mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE = 100µA, IC = 0 Collector Cutoff Current ICBO 1 µA VCB = 40V, IE = 0 Emitter Cutoff Current IEBO 1 µA VEB = 4V, IC = 0 fT 100 MHz Cobo 8 pF DC Current Gain Current Gain-Bandwidth Product Capacitance Electrical Characteristics, DRDN005W NPN Transistor Characteristic Test Condition VCE = 10V, IC = 50mA, f = 100MHz VCB = 10V, IE = 0, f = 1MHz @ TA = 25°C unless otherwise specified Symbol Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO 80 V IC = 100µA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 80 V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 4.0 V IE = 100µA, IC = 0 Collector Cutoff Current ICBO 100 nA Collector Cutoff Current ICES 100 nA DC Current Gain hFE 100 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 60V, IBO = 0V VCE = 80V, IBO = 0V IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) 0.25 V IC = 100mA, IB = 10mA Base-Emitter Saturation Voltage VBE(SAT) 1.2 V IC = 100mA, VCE = 1.0V Current Gain-Bandwidth Product fT 100 MHz VCE = 2.0V, IC = 10mA, f = 100MHz Electrical Characteristics, DRDP006W PNP Transistor Characteristic Symbol Min hFE Collector-Emitter Saturation Voltage VCE(SAT) Collector-Base Breakdown Voltage Test Condition @ TA = 25°C unless otherwise specified Max Unit 100 300 IC = -150mA, VCE = -10V -0.4 V IC = -150mA, IB = -15mA V(BR)CBO -60 V IC = -10µA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 V IC = -10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE = -10µA, IC = 0 ICBO -10 nA VCB = -50V, IE = 0 fT 200 MHz Cobo 8 pF DC Current Gain Collector Cutoff Current Current Gain-Bandwidth Product Capacitance Test Condition VCE = -20V, IC = -50mA, f = 100MHz VCB = -10V, IE = 0, f = 1MHz Electrical Characteristics, DRDNB16W Pre-Biased NPN Transistor Characteristic Input Voltage Output Voltage @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Vl(off) 0.3 V VCC = 5V, IO = 100µA Test Condition Vl(on) 2.0 V VO = 0.3V, IO = 20mA VO(on) 0.3V V IO/Il = 50mA/2.5mA Il 7.2 mA VI = 5V IO(off) 0.5 µA VCC = 50V, VI = 0V DC Current Gain Gl 56 VO = 5V, IO = 50mA Gain-Bandwidth Product fT 200 MHz Input Current Output Current DS30573 Rev. 8 - 2 3 of 9 www.diodes.com VCE = 10V, IE = 5mA, f = 100MHz DRD (xxxx) W NEW PRODUCT Electrical Characteristics, DRDNB26W Pre-Biased NPN Transistor Characteristic @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Vl(off) 0.5 V VCC = 5V, IO = 100µA Test Condition Input Voltage Vl(on) 3.0 V VO = 0.3V, IO = 20mA Output Voltage VO(on) 0.3V V IO/Il = 50mA/2.5mA Il 28 mA VI = 5V IO(off) 0.5 µA VCC = 50V, VI = 0V DC Current Gain Gl 47 VO = 5V, IO = 50mA Gain-Bandwidth Product fT 200 MHz Input Current Output Current VCE = 10V, IE = 5mA, f = 100MHz Electrical Characteristics, DRDPB16W Pre-Biased PNP Transistor Characteristic Input Voltage Output Voltage @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Vl(off) -0.3 V VCC = -5V, IO = -100µA Test Condition Vl(on) -2.0 V VO = -0.3V, IO = -20mA VO(on) -0.3V V IO/Il = -50mA/-2.5mA Il -7.2 mA VI = -5V IO(off) -0.5 µA VCC = -50V, VI = 0V DC Current Gain Gl 56 VO = -5V, IO = -50mA Gain-Bandwidth Product fT 200 MHz Input Current Output Current VCE = -10V, IE = -5mA, f = 100MHz Electrical Characteristics, DRDPB26W Pre-Biased PNP Transistor Characteristic @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Vl(off) -0.5 V VCC = -5V, IO = -100µA Vl(on) -3.0 V VO = -0.3V, IO = -20mA VO(on) -0.3V V IO/Il = -50mA/-2.5mA Il -28 mA VI = -5V IO(off) -0.5 µA VCC = -50V, VI = 0V DC Current Gain Gl 47 VO = -5V, IO = -50mA Gain-Bandwidth Product fT 200 MHz Input Voltage Output Voltage Input Current Output Current Electrical Characteristics, Switching Diode Characteristic Reverse Breakdown Voltage (Note 4) Test Condition VCE = -10V, IE = -5mA, f = 100MHz @ TA = 25°C unless otherwise specified Symbol Min Max Unit V(BR)R 75 IR = 10µA VF 0.62 0.72 0.855 1.0 1.25 V IF = 5.0mA IF = 10mA IF = 100mA IF = 150mA µA µA µA nA VR = 75V VR = 75V, Tj = 150°C VR = 25V, Tj = 150°C VR = 20V Forward Voltage (Note 4) Test Condition Reverse Current (Note 4) IR 2.5 50 30 25 Total Capacitance CT 4.0 pF VR = 0, f = 1.0MHz Reverse Recovery Time trr 4.0 ns IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω Notes: 4. Short duration pulse test used to minimize self-heating effect. DS30573 Rev. 8 - 2 4 of 9 www.diodes.com DRD (xxxx) W Device Characteristics 1000 hFE, DC CURRENT GAIN PD, POWER DISSIPATION (mW) 200 150 100 100 50 VCE = 1.0V 1 0.0001 0 100 0 200 .001 .01 .1 1 10 IC, COLLECTOR CURRENT (A) Fig. 2, Typical DC Current Gain vs Collector Current (DRDN010W) TA, AMBIENT TEMPERATURE (°C) Fig. 1, Power Derating Curve (Total Device) 1000 100 VCE (SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (mV) f = 1MHz COBO, OUTPUT CAPACITANCE (pF) NEW PRODUCT 250 10 1 0.1 1 10 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 3, Output Capacitance vs. Collector-Base Voltage (DRDN010W) DS30573 Rev. 8 - 2 5 of 9 www.diodes.com 100 10 1 0.0001 .01 .1 1 IC, COLLECTOR CURRENT (A) Fig. 4, Collector Saturation Voltage vs Collector Current (DRDN010W) .001 10 DRD (xxxx) W VCB = 80V ICBO, COLLECTOR-BASE CURRENT (nA) NEW PRODUCT VCE, COLLECTOR EMITTER VOLTAGE (V) 10 1 0.1 0.01 25 50 75 100 2.0 1.8 1.4 IC = 10mA 1.2 1.0 IC = 1mA 0.8 0.6 IC = 100mA 0.4 0.2 0 125 0.001 TA, AMBIENT TEMPERATURE (ºC) Fig. 5, Typical Collector-Cutoff Current vs. Ambient Temperature (DRDN005W) 0.1 1 100 10 10000 VCE = 5V 0.450 0.400 hFE, DC CURRENT GAIN (NORMALIZED) IC IB = 10 0.350 0.300 TA = 25°C 0.250 TA = 150°C 0.200 0.150 0.100 0.050 TA = 150°C 1000 100 TA = -50°C TA = 25°C 10 TA = -50°C 0 10 1 1 1000 100 10 1 IC, COLLECTOR CURRENT (mA) Fig. 7, Collector Emitter Saturation Voltage vs. Collector Current (DRDN005W) 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 8, DC Current Gain vs Collector Current (DRDN005W) 1.0 1000 VCE = 5V 0.9 fT, GAIN BANDWIDTH PRODUCT (MHz) VBE(ON), BASE EMITTER VOLTAGE (V) 0.01 IB, BASE CURRENT (mA) Fig. 6, Typical Collector Saturation Region (DRDN005W) 0.500 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) IC = 30mA 1.6 0.8 TA = -50°C 0.7 TA = 25°C 0.6 0.5 TA = 150°C 0.4 0.3 VCE = 5V 100 10 0.2 1 0.1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 9, Base Emitter Voltage vs Collector Current (DRDN005W) DS30573 Rev. 8 - 2 6 of 9 www.diodes.com 10 1 IC, COLLECTOR CURRENT (mA) Fig. 10, Gain Bandwidth Product vs Collector Current (DRDN005W) DRD (xxxx) W 0.5 0.4 0.3 TA = 150°C TA = 25°C 0.2 0.1 TA = -50°C 1 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 1.6 IC = 10 IB 0 1.4 1.2 IC = 1mA IC = 30mA 1.0 0.8 0.6 0.4 0.2 1000 0 0.001 0.1 1 10 100 IB, BASE CURRENT (mA) Fig. 12, Typical Collector Saturation Region (DRDP006W) 0.01 1.0 1000 VCE = 5V VBE(ON), BASE EMITTER VOLTAGE (V) VCE = 5V TA = 150°C hFE, DC CURRENT GAIN (NORMALIZED) IC = 300mA IC = 10mA IC = 100mA IC, COLLECTOR CURRENT (mA) Fig.11, Collector Emitter Saturation Voltage vs. Collector Current (DRDP006W) 100 TA = 25°C TA = -50°C 10 0.9 TA = -50°C 0.8 0.7 0.6 TA = 25°C 0.5 0.4 TA = 150°C 0.3 0.2 1 1 100 10 0.1 1000 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 14, Base Emitter Voltage vs. Collector Current (DRDP006W) IC, COLLECTOR CURRENT (mA) Fig. 13, DC Current Gain vs Collector Current (DRDP006W) 30 1000 VCE = 5V 20 C, CAPACITANCE (pF) fT, GAIN BANDWIDTH PRODUCT (MHz) NEW PRODUCT 0.6 100 10 Cibo 10 5.0 Cobo 1 1 10 100 1.0 -0.1 IC, COLLECTOR CURRENT (mA) Fig. 15, Gain Bandwidth Product vs. Collector Current (DRDP006W) DS30573 Rev. 8 - 2 -1.0 -10 -30 REVERSE VOLTS (V) Fig. 16, Typical Capacitance (DRDP006W) 7 of 9 www.diodes.com DRD (xxxx) W IR, INSTANTANEOUS REVERSE CURRENT (nA) IF, INSTANTANEOUS FORWARD CURRENT (mA) 100 10 TA = -40ºC TA = 0ºC TA = 25ºC 1 TA = 75ºC TA = 125ºC 0.1 10000 TA = 125ºC 1000 TA = 75ºC 100 TA = 25ºC 10 TA = 0ºC 1 TA = -40ºC 0.1 0.8 0.4 0 1.2 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 17, Typical Forward Characteristics (Switching Diode) 0 20 40 60 80 100 VR, REVERSE VOLTAGE (V) Fig. 18, Typical Reverse Characteristics (Switching Diode) 3 f = 1MHz CT, TOTAL CAPACITANCE (pF) NEW PRODUCT 1000 2.5 2 1.5 1 0.5 0 0 10 20 30 40 50 VR, REVERSE VOLTAGE (V) Fig. 19, Typical Capacitance vs. Reverse Voltage (Switching Diode) DS30573 Rev. 8 - 2 8 of 9 www.diodes.com DRD (xxxx) W Notes: (Note 5) Device Marking Code Packaging Shipping DRDN010W-7 RD01 SOT-363 3000/Tape & Reel DRDN005W-7 RD07 SOT-363 3000/Tape & Reel DRDP006W-7 RD02 SOT-363 3000/Tape & Reel DRDNB16W-7 RD03 SOT-363 3000/Tape & Reel DRDNB26W-7 RD04 SOT-363 3000/Tape & Reel DRDPB16W-7 RD05 SOT-363 3000/Tape & Reel DRDPB26W-7 RD06 SOT-363 3000/Tape & Reel 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information RDxx = Product Type Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September YM NEW PRODUCT Ordering Information RDxx Date Code Key Year 2005 2006 2007 2008 2009 Code S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Sample Applications R2 R1 Relay DRDN010W/ DRDN005W Relay RL DRDP006W DRDNB16W 1kΩ R1 Relay R2 RL RL 10kΩ Application Example: DRDP006W current source Application Example: DRDN010W/DRDN005W configuration, bias resistors not included current sink configuration, bias resistors not included Application Example: DRDNB16W current sink configuration with built-in bias resistors 4.7kΩ 10kΩ 220Ω 1kΩ Relay RL RL DRDPB26W DRDPB16W DRDNB26W 220Ω Relay 4.7kΩ RL Application Example: DRDNB26W current sink configuration with built-in bias resistors (low R1) DS30573 Rev. 8 - 2 Relay Application Example: DRDPB16W current source configuration with built-in bias resistors 9 of 9 www.diodes.com Application Example: DRDPB26W current source configuration with built-in bias resistors (low R1) DRD (xxxx) W