SPICE MODELS: DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143TU DCX114TU DCX (xxxx) U SMALL SIGNAL COMPLEMENTARY PRE-BIASED DUAL TRANSISTOR NEW PRODUCT Features • • • • Epitaxial Planar Die Construction SOT-363 A Built-In Biasing Resistors Lead Free/RoHS Compliant (Note 3) Surface Mount Package Suited for Automated Assembly CXX YM Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 α 0° 8° B C Mechanical Data • • • • • • • • • Case: SOT-363 G H Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 K Moisture Sensitivity: Level 1 per J-STD-020C M Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). J D L F Terminal Connections: See Diagram Marking: Date Code and Marking Code (See Page 4) All Dimensions in mm Ordering Information (See Page 4) Weight: 0.006 grams (approximate) P/N R1 R2 MARKING DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143TU DCX143EU DCX114TU 22KΩ 47KΩ 10KΩ 2.2KΩ 10KΩ 4.7KΩ 4.7KΩ 10KΩ 22KΩ 47KΩ 47KΩ 47KΩ 10KΩ 4.7KΩ - C17 C20 C14 C06 C13 C07 C08 C12 Maximum Ratings NPN Section EQ2 5 4 R1 Q1 R1 R2 Q2 1 2 3 EQ1 BQ1 CQ2 1 EQ1 R1 Q2 2 3 CQ2 BQ1 Q1: NPN Transistor Q2: PNP Transistor R1 Only SCHEMATIC DIAGRAM DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143TU DCX143EU DCX114TU All (Note 2) Thermal Resistance, Junction to Ambient Air (Note 1) Note: BQ2 6 R1, R2 DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143TU DCX143EU DCX114TU Operating and Storage and Temperature Range CQ1 4 @ TA = 25°C unless otherwise specified Output Current Power Dissipation (Total) EQ2 5 R2 R 1 Characteristic Output Current BQ2 6 Q1 Supply Voltage, (6) to (1) and (4) to (3) Input Voltage, (2) to (1) and (4) to (5) CQ1 Symbol Value Unit VCC 50 V VIN -10 to +40 -10 to +40 -6 to +40 -5 to +12 -10 to +40 -5 Vmax -10 to +30 -5 Vmax V IO 30 30 70 100 50 100 100 100 mA IC (Max) 100 mA Pd 200 mW RθJA 625 °C/W Tj, TSTG -55 to +150 °C 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 2. 150mW per element must not be exceeded. 3. No purposefully added lead. DS30347 Rev. 8 - 2 1 of 11 www.diodes.com DCX (xxxx) U Diodes Incorporated Maximum Ratings PNP Section @ TA = 25°C unless otherwise specified NEW PRODUCT Characteristic Supply Voltage, (3) to (1) Input Voltage, (2) to (1) Output Current DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143TU DCX143EU DCX114TU Value Unit VCC 50 V VIN +10 to -40 +10 to -40 +6 to -40 +5 to -12 +10 to -40 +5 Vmax +10 to -30 +5 Vmax V IO -30 -30 -70 -100 -50 -100 -100 -100 mA IC (Max) -100 mA Pd 200 mW RθJA 625 °C/W Tj, TSTG -55 to +150 °C DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143TU DCX143EU DCX114TU Output Current Power Dissipation (Total) Symbol All (Page 1: Note 2) Thermal Resistance, Junction to Ambient Air (Page 1: Note 1) Operating and Storage and Temperature Range Electrical Characteristics NPN Section Characteristic (DCX143TU & DCX114TU only) @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO 50 V IC = 50µA Collector-Emitter Breakdown Voltage BVCEO 50 V IC = 1mA Emitter-Base Breakdown Voltage BVEBO 5 −− V IE = 50µA Collector Cutoff Current ICBO 0.5 µA VCB = 50V Emitter Cutoff Current IEBO 0.5 µA VEB = 4V IC/IB = 2.5mA / 0.25mA IC/IB = 1mA / 0.1mA DCX143TU DCX114TU VCE(sat) 0.3 V DC Current Transfer Ratio hFE 100 250 600 Input Resistor (R1) Tolerance ∆R1 -30 +30 % fT 250 MHz VCE = 10V, IE = -5mA, f = 100MHz Collector-Emitter Saturation Voltage Gain-Bandwidth Product DS30347 Rev. 8 - 2 2 of 11 www.diodes.com IC = 1mA, VCE = 5V DCX (xxxx) U NEW PRODUCT Electrical Characteristics NPN Section (Continued) Characteristic Input Voltage Symbol Min Typ Max Vl(off) 0.5 0.5 0.3 0.5 0.5 0.5 1.1 1.1 1.1 1.16 1.9 1.9 1.9 1.99 3.0 3.0 1.4 1.1 3.0 3.0 DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143EU DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143EU Output Voltage DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143EU Input Current DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143EU Vl(on) Test Condition VCC = 5V, IO = 100µA V VO = 0.3, IO = 5mA VO = 0.3, IO = 2mA VO = 0.3, IO = 1mA VO = 0.3, IO = 5mA VO = 0.3, IO = 10mA VO = 0.3, IO = 20mA IO/Il = 10mA / 0.5mA IO/Il = 10mA / 0.5mA IO/Il = 5mA / 0.25mA IO/Il = 5mA / 0.25mA IO/Il = 10mA / 0.5mA IO/Il = 10mA / 0.5mA 0.1 0.3 V mA VI = 5V µA VCC = 50V, VI = 0V Il IO(off) 0.5 Gl 56 68 68 80 30 50 VO = 5V, IO = 5mA VO = 5V, IO = 5mA VO = 5V, IO = 10mA VO = 5V, IO = 10mA VO = 5V, IO = 5mA VO = 5V, IO = 10mA ∆R1 -30 +30 % R2/R1 -20 +20 % Input Resistor (R1) Tolerance Resistance Ratio Tolerance Unit 0.36 0.18 0.88 3.6 0.88 0.88 DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143EU fT Gain-Bandwidth Product Electrical Characteristics PNP Section Characteristic (DCX143TU & DCX114TU only) VO(on) Output Current DC Current Gain @ TA = 25°C unless otherwise specified 250 VCE = 10V, IE = 5mA, f = 100MHz MHz @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO -50 V IC = -50µA Collector-Emitter Breakdown Voltage BVCEO -50 V IC = -1mA Emitter-Base Breakdown Voltage BVEBO -5 V IE = -50µA Collector Cutoff Current ICBO -0.5 µA VCB = -50V Emitter Cutoff Current IEBO -0.5 µA VCE(sat) DC Current Transfer Ratio hFE 100 Input Resistor (R1) Tolerance ∆R1 -30 fT Collector-Emitter Saturation Voltage Gain-Bandwidth Product DS30347 Rev. 8 - 2 VEB = -4V IC/IB = 2.5mA / 0.25mA IC/IB = 1mA / 0.1mA DCX143TU DCX114TU -0.3 V 250 600 +30 % 250 MHz VCE = -10V, IE = 5mA, f = 100MHz 3 of 11 www.diodes.com IC = -1mA, VCE = -5V DCX (xxxx) U NEW PRODUCT Electrical Characteristics PNP Section (Continued) Characteristic DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143EU Input Voltage DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143EU Output Voltage DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143EU Input Current DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143EU Symbol Min Typ Max Vl(off) -0.5 -0.5 -0.3 -0.5 -0.5 -0.5 -1.1 -1.1 -1.1 -1.16 -1.9 -1.9 -1.9 -2.5 -3.0 -3.0 -1.4 -1.1 -3.0 -3.0 Vl(on) Notes: IO/Il = -10mA / -0.5mA IO/Il = -10mA / -0.5mA IO/Il = -5mA / -0.25mA IO/Il = -5mA / -0.25mA IO/Il = -10mA /- 0.5mA IO/Il = -10mA /- 0.5mA -0.3 V mA VI = -5V µA VCC = 50V, VI = 0V VO = -5V, IO = -5mA VO = -5V, IO = -5mA VO = -5V, IO = -10mA VO = -5V, IO = -10mA VO = -5V, IO = -5mA VO = -5V, IO = -10mA IO(off) -0.5 Gl 56 68 68 80 30 40 ∆R1 -30 +30 % R2/R1 -20 +20 % VO = -0.3, IO = -5mA VO = -0.3, IO =- 2mA VO = -0.3, IO = -1mA VO = -0.3, IO = -5mA VO = -0.3, IO = -10mA VO = -0.3, IO = -20mA -0.1 fT Ordering Information V Gain-Bandwidth Product Test Condition VCC = -5V, IO = -100µA Il Input Resistor (R1) Tolerance Resistance Ratio Tolerance Unit -0.36 -0.18 -0.88 -3.6 -0.88 -0.88 DCX124EU DCX144EU DCX114YU DCX123JU DCX114EU DCX143EU DC Current Gain VO(on) Output Current @ TA = 25°C unless otherwise specified 250 MHz VCE = -10V, IE = -5mA, f = 100MHz (Note 4) Device Packaging Shipping DCX124EU-7-F SOT-363 3000/Tape & Reel DCX144EU-7-F SOT-363 3000/Tape & Reel DCX114YU-7-F SOT-363 3000/Tape & Reel DCX123JU-7-F SOT-363 3000/Tape & Reel DCX114EU-7-F SOT-363 3000/Tape & Reel DCX143TU-7-F SOT-363 3000/Tape & Reel DCX143EU-7-F SOT-363 3000/Tape & Reel DCX114TU-7-F SOT-363 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information CXX = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September CXX YM Date Code Key Year 2006 2007 2008 2009 2010 2011 2012 Code T U V W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30347 Rev. 8 - 2 4 of 11 www.diodes.com DCX (xxxx) U TYPICAL CURVES - DCX123JU PNP SECTION 1 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) 200 150 100 50 0 -50 0 50 100 IC/IB = 10 TA = 75°C 0.1 TA = -25°C TA = 25°C 0.01 0.001 150 10 0 20 40 30 50 IC, COLLECTOR CURRENT (mA) Fig. 2 VCE(SAT) vs. IC TA, AMBIENT TEMPERATURE (°C) Fig. 1 Derating Curve 1000 VCE = 10V 12 IE = 0mA f = 1MHz TA = 75°C COB, CAPACITANCE (pF) hFE, DC CURRENT GAIN 10 TA = 25°C TA = -25°C 100 8 6 4 2 0 0 10 1 10 IC, COLLECTOR CURRENT (mA) Fig. 3 DC Current Gain 10 5 15 20 25 30 VR, REVERSE BIAS VOLTAGE (V) Fig. 4 Output Capacitance 100 100 10 TA = 75°C VO = 5V VO = 0.2V TA = 25°C 10 Vin, INPUT VOLTAGE (V) IC, COLLECTOR CURRENT (mA) NEW PRODUCT 250 TA = -25°C 1 0.1 0.01 0.001 0 1 2 3 4 5 6 7 8 9 10 TA = -25°C 1 TA = 25°C 0.1 Vin, INPUT VOLTAGE (V) Fig. 5 Collector Current Vs. Input Voltage DS30347 Rev. 8 - 2 TA = 75°C 5 of 11 www.diodes.com 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 6 Input Voltage vs. Collector Current DCX (xxxx) U TYPICAL CURVES - DCX123JU NPN SECTION 1000 1 VCE = 10V VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) TA = 75°C 0.1 hFE, DC CURRENT GAIN NEW PRODUCT IC/IB = 10 TA = 75°C TA = -25°C TA = 25°C 0.01 0.001 10 0 20 40 30 TA = 25°C TA = -25°C 100 10 50 1 10 IC, COLLECTOR CURRENT (mA) Fig. 8 DC Current Gain IC, COLLECTOR CURRENT (mA) Fig. 7 VCE(SAT) vs. IC 100 100 4 TA = 75°C IC, COLLECTOR CURRENT (mA) COB, CAPACITANCE (pF) IE = 0mA f = 1MHz 3 2 1 VO = 5V TA = 25°C 10 TA = -25°C 1 0.1 0.01 0 0 10 5 15 30 25 20 0.001 VR, REVERSE BIAS VOLTAGE (V) Fig. 9 Output Capacitance 0 1 2 3 4 5 6 7 8 9 10 Vin, INPUT VOLTAGE (V) Fig. 10 Collector Current Vs. Input Voltage 10 Vin, INPUT VOLTAGE (V) VO = 0.2V TA = -25°C 1 TA = 75°C TA = 25°C 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 11 Input Voltage vs. Collector Current DS30347 Rev. 8 - 2 6 of 11 www.diodes.com DCX (xxxx) U TYPICAL CURVES - DCX143EU PNP SECTION 250 0.12 IC, COLLECTOR CURRENT (A) 200 150 100 50 Ib = 4.5mA Ib = 3mA 0.09 0.08 0.07 0.06 Ib = 1mA 0.05 Ib = 0.5mA 0.04 0.03 Ib = 1.5mA Ib = 2mA 0.02 Ib = 2.5mA 0.01 0 0 50 25 75 100 150 100 0 175 0 TA, AMBIENT TEMPERATURE (°C) Fig. 12 Power Derating Curve 180 TA = 125°C 140 TA = 85°C 120 100 80 60 TA = 25°C 40 TA = -55°C VCE = -5V 11 TA = 85°C TA = 150°C TA = 125°C 0.1 TA = 25°C TA = -55°C 10 9 8 7 6 5 4 3 TA = -55°C 2 20 TA = 25°C TA = 85°C 1 0.01 0 0.1 1 10 100 10 20 40 30 50 0.1 IC, COLLECTOR CURRENT (mA) Fig. 15 VCE(SAT) vs IC IC, COLLECTOR CURRENT (mA) Fig. 14 DC Current Gain 1 TA = 150°C 10 100 IC, COLLECTOR CURRENT (mA) Fig. 16 VBE vs IC 15 30 IC/IB = 10 VCE = -0.3V 24 21 18 15 12 TA = 85°C 9 TA = 150°C TA = 25°C VI(ON), INPUT VOLTAGE (V) 27 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) TA = 125°C 0 0 1000 2 12 IC/IB = 10 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 160 0.5 1.5 1 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 13 VCE vs IC 1 TA = 150°C VCE = -5V hFE, DC CURRENT GAIN Ib = 4mA Ib = 3.5mA 0.1 VBE, BASE-EMITTER VOLTAGE (V) PD, POWER DISSIPATION (mW) NEW PRODUCT 0.11 12 TA = 125°C 9 6 3 6 TA = 25°C TA = 85°C TA = 150°C TA = -55°C 3 TA = -55°C 0 TA = 125°C 0 0.1 1 10 100 DS30347 Rev. 8 - 2 0.1 1 10 100 IC, OUTPUT CURRENT (mA) Fig. 18 VI(ON) vs IC IC, COLLECTOR CURRENT (mA) Fig. 17 VBE(SAT) vs IC 7 of 11 www.diodes.com DCX (xxxx) U TYPICAL CURVES - DCX143EU NPN SECTION 0.15 0.14 200 IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (mW) 150 100 50 0.13 0.12 0.11 Ib = 2.5mA Ib = 4mA Ib = 3.5mA 0.1 Ib = 1.5mA Ib = 1mA 0.06 0.05 0.04 0.03 Ib = 0.5mA Ib = 2mA 0.02 0.01 0 0 50 25 75 100 150 100 0 175 0 TA, AMBIENT TEMPERATURE (°C) Fig. 19 Power Derating Curve 250 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 20 VCE vs IC IC/IB = 10 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE = -5V TA = 150°C TA = 125°C 150 TA = 85°C 100 TA = 25°C 50 TA = -55°C TA = 85°C TA = 125°C TA = 150°C 0.1 TA = -55°C 9 TA = 25°C 0.01 VCE = 5V 8 7 6 5 4 3 2 TA = -55°C TA = 25°C TA = 85°C 1 0.001 0 0.1 1 10 100 10 0 1000 20 40 30 TA = 150°C TA = 125°C 0 50 0.1 IC, COLLECTOR CURRENT (mA) Fig. 22 VCE(SAT) vs IC IC, COLLECTOR CURRENT (mA) Fig. 21 DC Current Gain 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 23 VBE vs IC 25 30 IC/IB = 10 27 VCE = 0.3V 22.5 20 24 21 18 15 TA = 150°C 12 9 TA = 85°C 6 TA = 25°C 3 VI(ON), INPUT VOLTAGE (V) VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 2 10 1 200 hFE, DC CURRENT GAIN Ib = 3mA 0.09 0.08 0.07 VBE, BASE-EMITTER VOLTAGE (V) NEW PRODUCT 250 17.5 15 12.5 10 7.5 5 TA = 125°C TA = 25°C TA = -55°C 0 TA = 85°C TA = -55°C 2.5 TA = 150°C TA = 125°C 0 0.1 1 10 100 DS30347 Rev. 8 - 2 0.1 1 10 100 IC, OUTPUT CURRENT (mA) Fig. 25 VI(ON) vs IC IC, COLLECTOR CURRENT (mA) Fig. 24 VBE(SAT) vs IC 8 of 11 www.diodes.com DCX (xxxx) U TYPICAL CURVES - DCX114TU PNP SECTION 1 1000 0.1 TA = 75°C TA = -25°C TA = 25°C 0.01 0.001 10 0 20 TA = 25°C 100 10 1 40 30 TA = -25°C 50 1 10 IC, COLLECTOR CURRENT (mA) Fig. 27 DC Current Gain IC, COLLECTOR CURRENT (mA) Fig. 26 VCE(SAT) vs. IC 100 100 4 TA = 75°C IC, COLLECTOR CURRENT (mA) IE = 0mA f = 1MHz COB, CAPACITANCE (pF) VCE = 10V TA = 75°C hFE, DC CURRENT GAIN VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) NEW PRODUCT IC/IB = 10 3 2 1 TA = 25°C 10 TA = -25°C 1 0.1 0.01 0 0 10 5 15 30 25 20 0.001 0 VR, REVERSE BIAS VOLTAGE (V) Fig. 28 Output Capacitance 1 2 3 4 5 6 7 8 9 10 Vin, INPUT VOLTAGE (V) Fig. 29 Collector Current Vs. Input Voltage 10 Vin, INPUT VOLTAGE (V) VO = 0.2V TA = -25°C TA = 75°C 1 TA = 25°C 1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 30 Input Voltage vs. Collector Current DS30347 Rev. 8 - 2 9 of 11 www.diodes.com DCX (xxxx) U TYPICAL CURVES - DCX114TU NPN SECTION 1000 1 0.1 TA = 75°C TA = -25°C TA = 25°C 0.01 0.001 10 0 VCE = 10V TA = 75°C hFE, DC CURRENT GAIN NEW PRODUCT VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 20 TA = 25°C 100 10 1 40 30 TA = -25°C 50 1 10 IC, COLLECTOR CURRENT (mA) Fig. 32 DC Current Gain IC, COLLECTOR CURRENT (mA) Fig. 31 VCE(SAT) vs. IC 100 100 TA = 75°C 4 IC, COLLECTOR CURRENT (mA) COB, CAPACITANCE (pF) IE = 0mA f = 1MHz 3 2 1 TA = 25°C 10 TA =-25°C 1 0.1 0.01 0 0 10 5 15 30 25 20 0.001 0 VR, REVERSE BIAS VOLTAGE (V) Fig. 33 Output Capacitance 1 2 3 4 5 6 7 8 9 10 Vin, INPUT VOLTAGE (V) Fig. 34 Collector Current Vs. Input Voltage 10 Vin, INPUT VOLTAGE (V) VO = 0.2V TA = -25°C TA = 75°C 1 TA = 25°C 1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 35 Input Voltage vs. Collector Current DS30347 Rev. 8 - 2 10 of 11 www.diodes.com DCX (xxxx) U NEW PRODUCT IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30347 Rev. 8 - 2 11 of 11 www.diodes.com DCX (xxxx) U