DRD (xxxx) W COMPLEX ARRAY FOR RELAY DRIVERS Please click here to visit our online spice models database. Features • • • • A Epitaxial Planar Die Construction One Transistor and One Switching Diode in One Package Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) SOT-363 B C Mechanical Data • • • • • • • • Case: SOT-363 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 8 Ordering Information: See Page 8 Weight: 0.008 grams (approximate) H K J M D F L Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J ⎯ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 α 0° 8° All Dimensions in mm P/N DRDNB16W DRDPB16W DRDNB26W DRDPB26W R1 (NOM) R2 (NOM) 1K 10K 1K 10K 220 4.7K 220 4.7K DRDN010W/ DRDN005W Maximum Ratings, Total Device R2 R2 R1 DRDP006W DRDNB16W/ DRDNB26W R1 DRDPB16W/ DRDPB26W @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 3) Symbol PD Value 200 Unit mW Thermal Resistance, Junction to Ambient Air (Note 3) RθJA TJ, TSTG 625 °C/W -55 to +150 °C Operating and Storage Temperature Range Maximum Ratings, DRDN010W NPN Transistor Characteristic Symbol VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Note 3) Maximum Ratings, DRDN005W NPN Transistor Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current – Continuous (Note 3) Notes: @TA = 25°C unless otherwise specified Value 45 18 5 1000 Unit V V V mA @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Value 80 80 4.0 500 Unit V V V mA 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on page 9 or our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30573 Rev. 10 - 2 1 of 9 www.diodes.com DRD (xxxx) W © Diodes Incorporated Maximum Ratings, DRDP006W PNP Transistor Characteristic @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Note 3) Maximum Ratings, DRDNB16W Pre-Biased NPN Transistor Characteristic Maximum Ratings, DRDNB26W Pre-Biased NPN Transistor Characteristic Maximum Ratings, DRDPB16W Pre-Biased PNP Transistor Characteristic Maximum Ratings, DRDPB26W Pre-Biased PNP Transistor Characteristic Maximum Ratings, Switching Diode Unit V V mA @TA = 25°C unless otherwise specified Value -50 +5 to -10 600 Unit V V mA @TA = 25°C unless otherwise specified Value -50 +5 to -5 -600 Unit V V mA Value 100 Unit V 75 V 53 500 250 4.0 2.0 V mA mA @TA = 25°C unless otherwise specified Characteristic Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage DS30573 Rev. 10 - 2 Value 50 -5 to +5 600 Symbol VCC VIN IC Supply Voltage Input Voltage Output Current Unit V V mA @TA = 25°C unless otherwise specified Symbol VCC VIN IC Supply Voltage Input Voltage Output Current Non-Repetitive Peak Forward Surge Current Value 50 -5 to +10 600 Symbol VCC VIN IC Supply Voltage Input Voltage Output Current Unit V V V mA @TA = 25°C unless otherwise specified Symbol VCC VIN IC Supply Voltage Input Voltage Output Current RMS Reverse Voltage Forward Continuous Current Average Rectified Output Current Value -60 -60 -5.0 -600 (Note 3) (Note 3) @ t = 1.0μs @ t = 1.0s Symbol VRM VRRM VRWM VR VR(RMS) IFM IO IFSM 2 of 9 www.diodes.com A DRD (xxxx) W © Diodes Incorporated Electrical Characteristics, DRDN010W NPN Transistor Characteristic DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Current Gain-Bandwidth Product Capacitance Symbol hFE VCE(SAT) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO fT Cobo Min 150 @TA = 25°C unless otherwise specified Max 800 0.5 ⎯ 45 18 5 ⎯ ⎯ ⎯ 1 1 ⎯ ⎯ 100 Test Condition IC = 100mA, VCE = 1V IC = 300mA, IB = 30mA IC = 100μA, IE = 0 IC = 1mA, IB = 0 IE = 100μA, IC = 0 VCB = 40V, IE = 0 VEB = 4V, IC = 0 VCE = 10V, IC = 50mA, f = 100MHz VCB = 10V, IE = 0, f = 1MHz μA μA MHz pF ⎯ 8 ⎯ Electrical Characteristics, DRDN005W NPN Transistor Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Unit ⎯ V V V V @TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO Min 80 80 4.0 Max ⎯ ⎯ ⎯ Unit V V V Collector Cutoff Current ICBO ⎯ 100 nA Collector Cutoff Current ICES ⎯ 100 nA DC Current Gain hFE 100 ⎯ ⎯ VCE(SAT) VBE(SAT) ⎯ ⎯ 0.25 1.2 V V fT 100 ⎯ MHz Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain-Bandwidth Product Electrical Characteristics, DRDP006W PNP Transistor Characteristic DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Current Gain-Bandwidth Product Capacitance Symbol hFE VCE(SAT) V(BR)CBO V(BR)CEO V(BR)EBO ICBO fT Cobo Min 100 ⎯ -60 -60 -5 @TA = 25°C unless otherwise specified Max 300 -0.4 Unit ⎯ V V V V nA MHz pF ⎯ ⎯ ⎯ -10 ⎯ 200 ⎯ 8 ⎯ Test Condition IC = -150mA, VCE = -10V IC = -150mA, IB = -15mA IC = -10μA, IE = 0 IC = -10mA, IB = 0 IE = -10μA, IC = 0 VCB = -50V, IE = 0 VCE = -20V, IC = -50mA, f = 100MHz VCB = -10V, IE = 0, f = 1MHz Electrical Characteristics, DRDNB16W Pre-Biased NPN Transistor Characteristic Input Voltage Output Voltage Input Current Output Current DC Current Gain Gain-Bandwidth Product DS30573 Rev. 10 - 2 Symbol Vl(off) Vl(on) VO(on) Il IO(off) Gl fT Min 0.3 ⎯ ⎯ ⎯ ⎯ 56 ⎯ 3 of 9 www.diodes.com Test Condition IC = 100μA, IE = 0 IC = 1.0mA, IB = 0 IE = 100μA, IC = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 60V, IBO = 0V VCE = 80V, IBO = 0V IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 100mA, IB = 10mA IC = 100mA, VCE = 1.0V VCE = 2.0V, IC = 10mA, f = 100MHz Typ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 200 Max ⎯ 2.0 0.3V 7.2 0.5 ⎯ ⎯ @TA = 25°C unless otherwise specified Unit V V V mA Test Condition VCC = 5V, IO = 100μA VO = 0.3V, IO = 20mA IO/Il = 50mA/2.5mA VI = 5V μA VCC = 50V, VI = 0V ⎯ VO = 5V, IO = 50mA MHz VCE = 10V, IE = 5mA, f = 100MHz DRD (xxxx) W © Diodes Incorporated Electrical Characteristics, DRDNB26W Pre-Biased NPN Transistor Characteristic Input Voltage Output Voltage Input Current Output Current DC Current Gain Gain-Bandwidth Product Symbol Vl(off) Vl(on) VO(on) Il IO(off) Gl fT Min 0.5 Typ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 200 ⎯ ⎯ ⎯ ⎯ 47 ⎯ Max ⎯ 3.0 0.3V 28 0.5 ⎯ ⎯ Unit V V V mA Test Condition VCC = 5V, IO = 100μA VO = 0.3V, IO = 20mA IO/Il = 50mA/2.5mA VI = 5V μA VCC = 50V, VI = 0V ⎯ VO = 5V, IO = 50mA MHz VCE = 10V, IE = 5mA, f = 100MHz Electrical Characteristics, DRDPB16W Pre-Biased PNP Transistor Characteristic Input Voltage Output Voltage Input Current Output Current DC Current Gain Gain-Bandwidth Product Symbol Vl(off) Vl(on) VO(on) Il IO(off) Gl fT Min -0.3 Typ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 200 ⎯ ⎯ ⎯ ⎯ 56 ⎯ Max ⎯ -2.0 -0.3V -7.2 -0.5 ⎯ ⎯ @TA = 25°C unless otherwise specified Unit V V V mA Test Condition VCC = -5V, IO = -100μA VO = -0.3V, IO = -20mA IO/Il = -50mA/-2.5mA VI = -5V μA VCC = -50V, VI = 0V ⎯ VO = -5V, IO = -50mA MHz VCE = -10V, IE = -5mA, f = 100MHz Electrical Characteristics, DRDPB26W Pre-Biased PNP Transistor Characteristic Input Voltage Output Voltage Input Current Output Current DC Current Gain Gain-Bandwidth Product Symbol Vl(off) Vl(on) VO(on) Il IO(off) Gl fT Electrical Characteristics, Switching Diode Characteristic Reverse Breakdown Voltage (Note 4) Min -0.5 Typ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 200 ⎯ ⎯ ⎯ ⎯ 47 ⎯ Max ⎯ -3.0 -0.3V -28 -0.5 ⎯ ⎯ @TA = 25°C unless otherwise specified @TA = 25°C unless otherwise specified Unit V V V mA Test Condition VCC = -5V, IO = -100μA VO = -0.3V, IO = -20mA IO/Il = -50mA/-2.5mA VI = -5V μA VCC = -50V, VI = 0V ⎯ VO = -5V, IO = -50mA MHz VCE = -10V, IE = -5mA, f = 100MHz @TA = 25°C unless otherwise specified Symbol V(BR)R Min 75 Max ⎯ Unit ⎯ Forward Voltage VF 0.62 ⎯ ⎯ ⎯ 0.72 0.855 1.0 1.25 V Reverse Current (Note 4) IR ⎯ 2.5 50 30 25 μA μA μA nA Total Capacitance CT ⎯ 4.0 pF Reverse Recovery Time trr ⎯ 4.0 ns Notes: Test Condition IR = 10μA IF = 5.0mA IF = 10mA IF = 100mA IF = 150mA VR = 75V VR = 75V, TJ = 150°C VR = 25V, TJ = 150°C VR = 20V VR = 0, f = 1.0MHz IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω 4. Short duration pulse test used to minimize self-heating effect. DS30573 Rev. 10 - 2 4 of 9 www.diodes.com DRD (xxxx) W © Diodes Incorporated Device Characteristics 1,000 200 RθJA = 625°C/W hFE, DC CURRENT GAIN PD, POWER DISSIPATION (mW) 250 150 100 100 50 VCE = 1.0V 1 0.0001 0 0 80 120 160 40 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Power Derating Curve (Total Device) 100 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Fig. 2, Typical DC Current Gain vs. Collector Current (DRDN010W) 10 1,000 VCE (SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (mV) COBO, OUTPUT CAPACITANCE (pF) f = 1MHz 10 1 0.1 0.0001 100 1 0.1 0.01 50 75 100 TA, AMBIENT TEMPERATURE (ºC) Fig. 5, Typical Collector-Cutoff Current vs. Ambient Temperature (DRDN005W) DS30573 Rev. 10 - 2 0.001 0.01 0.1 10 1 IC, COLLECTOR CURRENT (A) Fig. 4, Typical Collector Saturation Voltage vs. Collector Current (DRDN010W) VCE, COLLECTOR EMITTER VOLTAGE (V) ICBO, COLLECTOR-BASE CURRENT (nA) 10 1 1 10 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 3, Typical Output Capacitance vs. Collector-Base Voltage (DRDN010W) 10 25 100 125 5 of 9 www.diodes.com 2.0 1.8 IC = 30mA 1.6 1.4 IC = 10mA 1.2 1.0 IC = 1mA 0.8 0.6 0.4 IC = 100mA 0.2 0 0.001 1 0.1 10 100 IB, BASE CURRENT (mA) Fig. 6, Typical Collector Saturation Region (DRDN005W) 0.01 DRD (xxxx) W © Diodes Incorporated 0.500 10,000 0.450 0.400 T A = 150°C 1,000 hFE, DC CURRENT GAIN VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE = 5V IC IB = 10 0.350 0.300 TA = 25°C 0.250 TA = 150°C 0.200 0.150 0.100 100 T A = 25°C TA = -50°C 10 0.050 TA = -50°C 0 1 1 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7, Typical Collector-Emitter Saturation Voltage vs. Collector Current (DRDN005W) 1 VCE = 5V 0.9 fT, GAIN BANDWIDTH PRODUCT (MHz) VBE(ON), BASE-EMITTER ON VOLTAGE (V) 1,000 1,000 1.0 0.8 TA = -50°C 0.7 TA = 25°C 0.6 0.5 0.4 T A = 150°C 0.3 0.2 0.1 0.1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 9, Typical Base-Emitter On Voltage vs. Collector Current (DRDN005W) 100 10 1 100 10 1 IC, COLLECTOR CURRENT (mA) Fig. 10, Typical Gain Bandwidth Product vs. Collector Current (DRDN005W) 0.6 1.6 VCE, COLLECTOR-EMITTER VOLTAGE (V) IC = 10 IB VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 10 100 IC, COLLECTOR CURRENT (mA) Fig. 8, Typical DC Current Gain vs. Collector Current (DRDN005W) 0.5 0.4 0.3 TA = 150°C TA = 25°C 0.2 0.1 TA = -50°C 0 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig.11, Typical Collector-Emitter Saturation Voltage vs. Collector Current (DRDP006W) DS30573 Rev. 10 - 2 6 of 9 www.diodes.com 1.4 IC = 300mA IC = 10mA IC = 100mA 1.2 IC = 1mA IC = 30mA 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 IB, BASE CURRENT (mA) Fig. 12, Typical Collector Saturation Region (DRDP006W) DRD (xxxx) W © Diodes Incorporated 1.0 1,000 VBE(ON), BASE-EMITTER ON VOLTAGE (V) VCE = 5V hFE, DC CURRENT GAIN TA = 150°C 100 T A = 25°C TA = -50°C 10 VCE = 5V 0.9 0.7 0.6 0.5 0.4 0.3 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 13, Typical DC Current Gain vs. Collector Current (DRDP006W) 0.2 1,000 0.1 10 1 IC, COLLECTOR CURRENT (mA) Fig. 14, Typical Base-Emitter On Voltage vs. Collector Current (DRDP006W) 100 30 VCE = 5V 20 C, CAPACITANCE (pF) fT, GAIN BANDWIDTH PRODUCT (MHz) 1,000 100 10 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 15, Typical Gain Bandwidth Product vs. Collector Current (DRDP006W) 1,000 Cibo 10 5.0 -1.0 -10 -30 VR, REVERSE VOLTAGE (V) Fig. 16, Typical Capacitance (DRDP006W) IR, INSTANTANEOUS REVERSE CURRENT (nA) 10,000 100 10 TA = -40ºC 1 0.1 TA = 125ºC 1,000 0.4 0.8 1.2 1.6 0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 17, Typical Forward Characteristics (Switching Diode) DS30573 Rev. 10 - 2 f = 1MHz 1.0 -0.1 1 IF, INSTANTANEOUS FORWARD CURRENT (mA) T A = -50°C 0.8 7 of 9 www.diodes.com 100 10 1 0.1 60 80 100 20 40 VR, REVERSE VOLTAGE (V) Fig. 18, Typical Reverse Characteristics (Switching Diode) 0 DRD (xxxx) W © Diodes Incorporated CT, TOTAL CAPACITANCE (pF) 3 2.5 f = 1MHz 2 1.5 1 0.5 0 0 10 30 20 40 V R, REVERSE VOLTAGE (V) Fig. 19, Typical Capacitance vs. Reverse Voltage (Switching Diode) Ordering Information Notes: 5. (Note 5) Device Packaging Shipping DRDN010W-7 SOT-363 3000/Tape & Reel DRDP006W-7 SOT-363 3000/Tape & Reel DRDNB16W-7 SOT-363 3000/Tape & Reel DRDNB26W-7 SOT-363 3000/Tape & Reel DRDPB16W-7 SOT-363 3000/Tape & Reel DRDPB26W-7 SOT-363 3000/Tape & Reel DRDN005W-7 SOT-363 3000/Tape & Reel For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM RDxx Date Code Key Year RDxx = Product Type Marking Code: RD01 = DRDN010W RD02 = DRDP006W RD03 = DRDNB16W RD04 = DRDNB26W RD05 = DRDPB16W RD06 = DRDPB26W RD07 = DRDN005W YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September 2005 2006 2007 2008 2009 2010 2011 2012 S T U V W X Y Z Code Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30573 Rev. 10 - 2 8 of 9 www.diodes.com DRD (xxxx) W © Diodes Incorporated Sample Applications R2 R1 Relay Relay RL DRDN010W/ DRDN005W DRDP006W DRDNB16W R1 Relay RL 10kΩ RL R2 1kΩ Application Example: DRDN010W/DRDN005W current sink configuration, bias resistors not included Application Example: DRDP006W current source configuration, bias resistors not included Application Example: DRDNB16W current sink configuration with built-in bias resistors 4.7kΩ 10kΩ 220Ω Relay 1kΩ RL RL DRDPB26W DRDPB16W DRDNB26W 220Ω Relay Relay RL 4.7kΩ Application Example: DRDNB26W current sink configuration with built-in bias resistors (low R1) Application Example: DRDPB16W current source configuration with built-in bias resistors Application Example: DRDPB26W current source configuration with built-in bias resistors (low R1) Suggested Pad Layout E Z E Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C 1.9 E 0.65 C G Y X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30573 Rev. 10 - 2 9 of 9 www.diodes.com DRD (xxxx) W © Diodes Incorporated