DMP57D5UFB P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • • Mechanical Data • • Low On-Resistance: RDS(ON) ≤ 6Ω @ VGS = -4.0V RDS(ON) ≤ 8Ω @ VGS = -2.5V Very Low Gate Threshold Voltage, ≤ 1.0V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Gate, 1KV Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability Case: DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.001 grams (approximate) • • • • • • Drain DFN1006-3 S D Body Diode Gate G ESD PROTECTED TO 1kV BOTTOM VIEW Gate Protection Diode TOP VIEW Internal Schematic Source Equivalent Circuit Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Steady Pulsed Drain Current (Note 3) Symbol VDSS VGSS ID IDM Value -50 ±8 -200 -700 Units V V mA mA Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1) Symbol PD RθJA Value 425 294 Units mW °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C TA = 25°C Thermal Characteristics Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 1. 2. 3. 4. 5. @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IGSS -50 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -10 ±500 V μA nA VGS = 0V, ID = -250μA VDS = -50V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) -0.7 ⎯ 4.6 -1.0 V 6 ⎯ 6 8 Ω |Yfs| VSD 100 ⎯ ⎯ ⎯ ⎯ -1.2 mS V VDS = VGS, ID = -250μA VGS = -4.0V, ID = -100mA VGS = -2.5V, ID = -80mA VDS = -5V, ID = -100mA VGS = 0V, IS = -100mA Ciss Coss Crss ⎯ ⎯ ⎯ 29 7.3 2.5 ⎯ ⎯ ⎯ pF pF pF IDSS RDS (ON) ⎯ Test Condition VDS = -4V, VGS = 0V f = 1.0MHz Device mounted on FR-4 PCB. t ≤5 sec. No purposefully added lead. Pulse width ≤10μS, Duty Cycle ≤1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. DMP57D5UFB Document number: DS31274 Rev. 3 - 2 1 of 4 www.diodes.com March 2008 © Diodes Incorporated DMP57D5UFB 0.8 0.4 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 0.6 VGS = -10V 0.5 VGS = -4.5V 0.4 0.3 VGS = -2.5V 0.2 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VDS = -5V 0.2 TA = 25°C TA = 150°C TA = -55°C TA = 85°C 0.1 0 0.5 5 1 1.5 2 2.5 -VGS, GATE SOURCE VOLTAGE (V) 3 Fig. 2 Typical Transfer Characteristics 100 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 10 9 8 7 6 VGS = -2.5V 5 4 VGS = -4.5V VGS = -10V 3 2 1 0 0.001 0.01 0.1 -ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage T A = 125°C 10 TA = 25°C TA = -55°C 1 2.0 35 1.8 30 1.6 25 VGS = -4V ID = -100mA 1.4 VGS = -2.5V ID = -100mA 1.2 1.0 T A = 150°C TA = 85°C 0 1 C, CAPACITANCE (pF) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.3 VGS = -1.8V VGS = -1.5V 0 RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) NEW PRODUCT 0.7 0.1 0.2 0.3 0.4 0.5 -ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature Ciss 20 f = 1MHz VGS = 0V 15 10 0.8 5 0.6 -50 0 Coss C rss -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMP57D5UFB Document number: DS31274 Rev. 3 - 2 2 of 4 www.diodes.com 0 5 10 15 20 25 30 35 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Capacitance 40 March 2008 © Diodes Incorporated DMP57D5UFB 0.5 0.9 ID = -250µA -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) 0.8 0.7 0.6 0.4 0.3 0.2 T A = 150°C T A = 125°C 0.1 T A = 85°C T A = 25°C 0.5 -50 TA = -55°C 0 0.3 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0.4 0.5 0.6 0.7 0.8 0.9 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 D = 0.02 RθJA(t) = r(t) * RθJA RθJA = 294°C/W D = 0.01 D = 0.005 0.01 P(pk) D = Single Pulse t1 t2 T J - T A = P * RθJA(t) Duty Cycle, D = t1/t2 0.001 0.00001 0.0001 0.001 0.01 0.1 t1, PULSE DURATION TIME (s) 1 10 100 Fig. 9 Transient Thermal Response Ordering Information (Note 6) Part Number DMP57D5UFB -7 Notes: Case DFN1006-3 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information DP DMP57D5UFB Document number: DS31274 Rev. 3 - 2 DP = Product Type Marking Code Dot Denotes Drain Side 3 of 4 www.diodes.com March 2008 © Diodes Incorporated DMP57D5UFB Package Outline Dimensions G DFN1006-3 Dim Min Max Typ A 0.95 1.075 1.00 B 0.55 0.675 0.60 C 0.45 0.55 0.50 D 0.20 0.30 0.25 G 0.47 0.53 0.50 H 0 0.05 0.03 K 0.10 0.20 0.15 L 0.20 0.30 0.25 M 0.35 ⎯ ⎯ N 0.40 ⎯ ⎯ All Dimensions in mm H NEW PRODUCT A K B C M D N L Suggested Pad Layout C Dimensions Z G1 G2 X X1 Y C X1 X G2 Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 G1 Y Z IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMP57D5UFB Document number: DS31274 Rev. 3 - 2 4 of 4 www.diodes.com March 2008 © Diodes Incorporated