DMN3051L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: RDS(ON) < 38mΩ @ VGS = 10V, ID = 5.8A RDS(ON) < 64mΩ @ VGS = 4.5V, ID = 5.0A Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) • • • • • • Drain SOT-23 D Gate TOP VIEW TOP VIEW Maximum Ratings S G Source Equivalent Circuit @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) TA = 25°C TA = 70°C Pulsed Drain Current (Note 1) Body-Diode Continuous Current (Note 1) Value 30 ±20 5.8 4.9 20 2.0 ID IDM IS Unit V V A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1) Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 1. 2. 3. 4. Symbol Value Unit PD RθJA 1.4 90 W °C/W TJ, TSTG -55 to +150 °C @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IDSS 30 ⎯ ⎯ ⎯ V nA IGSS ⎯ ⎯ ⎯ 800 ±80 ±800 VGS(th) |Yfs| VSD 1.3 ⎯ ⎯ ⎯ ⎯ 1.9 33 54 5 0.78 ⎯ 1.16 S V Ciss Coss Crss ⎯ ⎯ ⎯ 424 115 81 ⎯ ⎯ ⎯ pF pF pF RDS (ON) 2.2 38 64 nA V mΩ Test Condition VGS = 0V, ID = 250μA VDS = 28V, VGS = 0V VGS = ±12V, VDS = 0V VGS = ±20V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 5.0A VDS = 5V, ID = 3.1A VGS = 0V, IS = 2.0A VDS = 5V, VGS = 0V f = 1.0MHz Device mounted on FR-4 PCB. t ≤5 sec. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. DMN3051L Document number: DS31347 Rev. 3 - 2 1 of 4 www.diodes.com June 2008 © Diodes Incorporated DMN3051L 9.0 6 8.0 VGS = 10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4.5V 6.0 5.0 4.0 3.0 VDS = 5V 4 3 2 TA = 150°C TA = 125°C 2.0 VGS = 1.8V 0 1.5 3 0.1 0.09 0.08 0.07 0.06 VGS = 4.5V 0.04 0.03 VGS = 10V 0.02 0.01 0 0 1 2 3 4 5 ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 2.5 VGS, GATE SOURCE VOLTAGE (V) 3.5 Fig. 2 Typical Transfer Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0.05 TA = 25°C TA = -55°C 0 0 TA = 85°C 1 VGS = 3.0V VGS = 2.5V 1.0 6 0.10 0.09 TA = 150°C 0.08 T A = 125°C 0.07 TA = 85°C 0.06 T A = 25°C 0.05 TA = -55°C 0.04 0.03 0 1 2 3 4 5 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 6 1.6 1.5 1.4 VGS = 10V ID = 5.8A 1.3 1.2 VGS = 4.5V ID = 5A 1.1 Ciss C, CAPACITANCE (pF) RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) NEW PRODUCT 5 7.0 1.0 0.9 Coss Crss 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMN3051L Document number: DS31347 Rev. 3 - 2 2 of 4 www.diodes.com 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Capacitance 30 June 2008 © Diodes Incorporated DMN3051L 10 2.5 ID = 250µA 1 IS, SOURCE CURRENT (A) NEW PRODUCT VGS(TH), GATE THRESHOLD VOLTAGE (V) 3 2 1.5 1 0.5 T A = 150°C TA = 125°C 0.1 TA = 85°C T A = 25°C 0.01 T A = -55°C 0.001 0.0001 0 -50 0.1 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0.3 0.5 0.7 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.1 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 105°C/W D = 0.02 0.01 P(pk) D = 0.01 D = Single Pulse 0.001 0.00001 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 9 Transient Thermal Response Ordering Information (Note 5) Part Number DMN3051L-7 Notes: Case SOT-23 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. YM Marking Information 3N5 Date Code Key Year Code Month Code 2007 U Jan 1 DMN3051L Document number: DS31347 Rev. 3 - 2 2008 V Feb 2 2009 W Mar 3 Apr 4 3N5 = Product Type Marking Code YM = Date Code Marking Y = Year ex: U = 2007 M = Month ex: 9 = September 2010 X May 5 2011 Y Jun 6 3 of 4 www.diodes.com 2012 Z Jul 7 Aug 8 2013 A Sep 9 2014 B Oct O 2015 C Nov N Dec D June 2008 © Diodes Incorporated DMN3051L Package Outline Dimensions A SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 F 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 0° 8° α All Dimensions in mm NEW PRODUCT B C G H K M J D F L Suggested Pad Layout Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 Y Z C X E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN3051L Document number: DS31347 Rev. 3 - 2 4 of 4 www.diodes.com June 2008 © Diodes Incorporated