DMP2004TK P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Gate "Green" Device (Note 4) Qualified to AEC-Q101 standards for High Reliability Case: SOT-523 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.002 grams (approximate) • • • • • • Drain SOT-523 D Gate TOP VIEW ESD PROTECTED Gate Protection Diode G Equivalent Circuit Maximum Ratings Characteristic Drain Current (Note 1) Steady State TA = 25°C TA = 85°C Pulsed Drain Current (Note 3) Thermal Characteristics Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol VDSS VGSS Value -20 ±8 Units V V ID -430 -310 mA IDM -750 mA Value 150 833 -55 to +150 Units mW °C/W °C @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range 1. 2. 3. 4. 5. TOP VIEW @TA = 25°C unless otherwise specified Drain-Source Voltage Gate-Source Voltage Notes: S Source Symbol PD RθJA TJ, TSTG @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS -20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1.0 ±1.0 V μA μA VGS = 0V, ID = -250mA VDS = -20V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) -0.5 ⎯ -1.0 V RDS (ON) ⎯ 0.7 1.1 1.7 1.1 1.6 2.4 Ω |Yfs| VSD 200 ⎯ ⎯ ⎯ ⎯ -1.4 ms V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA VDS =10V, ID = 0.2A VGS = 0V, IS = -115mA Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 175 30 20 pF pF pF VDS = -16V, VGS = 0V f = 1.0MHz Device mounted on FR-4 PCB. No purposefully added lead. Pulse width ≤10μS, Duty Cycle ≤1% Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. DMP2004TK Document number: DS30932 Rev. 4 - 2 1 of 4 www.diodes.com March 2009 © Diodes Incorporated -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) DMP2004TK 0 0 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics -VGS(th), GATE THRESHOLD VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics TA, AMBIENT TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Ambient Temperature -ID, DRAIN-SOURCE CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current 10 -ID, DRAIN-SOURCE CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMP2004TK Document number: DS30932 Rev. 4 - 2 -ID, DRAIN-SOURCE CURRENT (A) Fig. 6 Static Drain-Source On-Resistance vs. Drain-Source Current 2 of 4 www.diodes.com March 2009 © Diodes Incorporated DMP2004TK -VDS, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage TA, AMBIENT TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs. Ambient Temperature 150 120 90 60 30 0 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Capacitance -ID, DRAIN CURRENT (A) Fig. 9 Forward Transfer Admittance vs. Drain Current Ordering Information (Note 6) Part Number DMP2004TK-7 Notes: Case SOT-523 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information PAB Date Code Key Year Code Month Code 2006 T Jan 1 2007 U Feb 2 DMP2004TK Document number: DS30932 Rev. 4 - 2 Mar 3 PAB = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) YM 2008 V Apr 4 May 5 2009 W Jun 6 3 of 4 www.diodes.com 2010 X Jul 7 Aug 8 2011 Y Sep 9 Oct O 2012 Z Nov N Dec D March 2009 © Diodes Incorporated DMP2004TK Package Outline Dimensions A SOT-523 Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 0.50 ⎯ ⎯ G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 0° 8° α ⎯ All Dimensions in mm B C G H K M N J L D Suggested Pad Layout Y Z C X Dimensions Value (in mm) Z 1.8 X 0.4 Y 0.51 C 1.3 E 0.7 E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMP2004TK Document number: DS30932 Rev. 4 - 2 4 of 4 www.diodes.com March 2009 © Diodes Incorporated