74AUP1G07 SINGLE BUFFER/DRIVER WITH OPEN DRAIN OUTPUT Description Pin Assignments The Advanced Ultra Low Power (AUP) CMOS logic family is designed for low power and extended battery life in portable applications. The 74AUP1G07 is a single buffer gate with an open drain output designed for operation over a power supply range of 0.8V to 3.6V. The device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output preventing damaging current backflow when the device is powered down. The gate performs the positive Boolean function: Y=A Features • Advanced Ultra Low Power (AUP) CMOS • Supply Voltage Range from 0.8V to 3.6V • 4 mA Output Drive at 3.0V • Low Static power consumption ICC < 0.9µA • Low Dynamic Power Consumption CPD = 6pF (Typical at 3.6V) • Schmitt Trigger Action at All Inputs Make the Circuit Tolerant for Slower Input Rise and Fall Time. The hysteresis is typically 250 mV at VCC = 3.0V • IOFF Supports Partial-Power-Down Mode Operation • ESD Protection Exceeds JESD 22 2000-V Human Body Model (A114-A) Exceeds 1000-V Charged Device Model (C101C) • Latch-Up Exceeds 100mA per JESD 78, Class II • Range of Package Options SOT353, DFN1410, and DFN1010 • Leadless packages per JESD30E DFN1010 denoted as X2-DFN1010-6 DFN1014 denoted as X2-DFN1014-6 Applications • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Suited for battery and low power needs • Halogen and Antimony Free. “Green” Device (Note 3) • Wide array of products such as: • Tablets, E-readers Notes: Cell Phones, Personal Navigation / GPS MP3 players ,Cameras, Video Recorders PCs ultrabooks, notebooks, netbooks, Computer peripherals, hard drives, CD/DVD ROM TV, DVD, DVR, set top box 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Click here for ordering information, located at the end of datasheet 74AUP1G07 Document number: DS35149 Rev. 1 - 2 1 of 11 www.diodes.com August 2012 © Diodes Incorporated 74AUP1G07 Pin Descriptions Pin Name NC A GND Y No Connection Data Input Ground Data Output Function VCC Supply Voltage Logic Diagram A 4 2 Y Function Table Inputs A H L Output Y Z L 74AUP1G07 Document number: DS35149 Rev. 1 - 2 2 of 11 www.diodes.com August 2012 © Diodes Incorporated 74AUP1G07 Absolute Maximum Ratings (Note 4) (@TA = +25°C, unless otherwise specified.) Symbol ESD HBM ESD CDM Parameter Human Body Model ESD Protection Charged Device Model ESD Protection Rating 2 1 Unit KV KV V Supply Voltage Range -0.5 to +4.6 VI Input Voltage Range -0.5 to +4.6 V Vo Voltage applied to output in high or low state -0.5 to VCC +0.5 V IIK Input Clamp Current VI < 0 50 mA IOK Output Clamp Current (VO < 0 ) 50 mA IO Continuous output current (VO = 0 to VCC) ICC Continuous current through VCC VCC ±20 mA 50 mA IGND Continuous current through GND -50 mA TJ Operating Junction Temperature -40 to +150 °C Storage Temperature -65 to +150 °C TSTG Note: 4. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device operation should be within recommend values. Recommended Operating Conditions (Note 5) (@TA = +25°C, unless otherwise specified.) Symbol VCC Parameter Operating Voltage Min Max Unit 0.8 3.6 V VI Input Voltage 0 3.6 V VO Output Voltage 0 VCC V µA IOL Low-Level Output Current VCC = 0.8V 20 VCC = 1.1V 1.1 VCC = 1.4V 1.7 VCC = 1.65V 1.9 VCC = 2.3V 3.1 4 VCC = 3.0V Δt/ΔV Input Transition Rise or Fall Rate TA Operating Free-Air Temperature Note: mA VCC = 0.8V to 3.6V -40 200 ns/V +125 °C 5. Unused inputs should be held at VCC or Ground. 74AUP1G07 Document number: DS35149 Rev. 1 - 2 3 of 11 www.diodes.com August 2012 © Diodes Incorporated 74AUP1G07 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Symbol Parameter Test Conditions VCC TA = +25°C Min Max TA = -40°C to +85°C Min Max 0.8V to 1.65V 0.80 X VCC 0.80 X VCC 0.65 X VCC 1.6 2.0 0.65 X VCC 1.6 2.0 Unit VIH High-Level Input Voltage 1.65V to 1.95V 0.8V to 1.65V 0.30 X VCC 0.30 X VCC VIL Low-Level Input Voltage 1.65V to 1.95V 0.35 X VCC 0.7 0.9 0.35 X VCC 0.7 0.9 VOL High-Level Input Voltage 2.3V to 2.7V 3.0V to 3.6V 2.3V to 2.7V 3.0V to 3.6V 0.8V to 3.6V 0.1 0.1 IOL = 1.1mA 1.1V 0.3 X VCC 0.3 X VCC IOL = 1.7mA 1.4V 0.31 0.37 IOL = 1.9mA 1.65V 0.31 0.35 0.31 0.33 0.44 0.45 0.31 0.33 0.44 0.45 0V to 3.6V ± 0.1 ± 0.5 μA 0 ± 0.2 ± 0.5 μA 3.6V ± 0.2 ± 0.5 μA 0V to 0.2 V 0.2 0.6 μA 0.8V to 3.6V 0.5 0.9 μA 3.3V 40 50 μA IOL = 2.3mA IOL = 2.7mA IOFF IOZ ΔIOFF Input Current V IOL = 20μA IOL = 3.1mA II V IOL = 4mA A or B Input VI = GND to 3.6V Power Down VI or VO = 0V to 3.6V Leakage Current VO = 3.6V Z State Leakage Current Vi = 3.6V Delta Power Down Leakage VI or VO = 0V to 3.6V Current ICC Supply Current VI = GND or VCC, IO=0 ΔICC Additional Supply Current Input at VCC -0.6V 74AUP1G07 Document number: DS35149 Rev. 1 - 2 2.3V 3V 4 of 11 www.diodes.com V August 2012 © Diodes Incorporated 74AUP1G07 Electrical Characteristics (cont.) (@TA = +25°C, unless otherwise specified.) Parameter 0.8V to 1.65V 0.80 X VCC VIH High-Level Input Voltage 1.65V to 1.95V 0.70 X VCC 1.6 2.0 0.8V to 1.65V 0.25X VCC Low-Level Input Voltage 1.65V to 1.95V 2.3V to 2.7V 3.0V to 3.6V 0.35 X VCC 0.7 0.9 IOL = 20μA 0.8V to 3.6V 0.11 IOL = 1.1mA 1.1V 0.3 X VCC IOL = 1.7mA 1.4V 0.41 IOL = 1.9mA 1.65V 0.39 VIL VOL High-Level Input Voltage Test Conditions TA = -40°C to +125°C Max Symbol 2.3V to 2.7V 3.0V to 3.6V IOL = 2.3mA IOL = 3.1mA IOL = 2.7mA II IOFF IOZ ΔIOFF Input Current VCC IOL = 4mA A or B Input VI = GND to 3.6V Power Down VI or VO = 0V to 3.6V Leakage Current VO = 3.6V Z State Leakage Current Vi = 3.6V Delta Power Down Leakage VI or VO = 0V to 3.6V Current ICC Supply Current VI = GND or VCC, IO = 0 ΔICC Additional Supply Current Input at VCC -0.6V 74AUP1G07 Document number: DS35149 Rev. 1 - 2 2.3V 3V Min Unit V 0.36 V V 0.50 0.36 0.50 0V to 3.6V ± 0.75 μA 0 ± 3.5 μA 3.6V ± 1.5 μA 0V to 0.2V ± 2.5 μA 0.8V to 3.6V 3.0 μA 3.3V 75 μA 5 of 11 www.diodes.com August 2012 © Diodes Incorporated 74AUP1G07 Switching Characteristics CL = 5pF see Figure 1 Parameter tpd From Input A TO OUTPUT VCC Y 0.8V 1.2V ± 0.1V 1.5V ± 0.1V 1.8V ± 0.15V 2.5V ± 0.2V 3.3V ± 0.3V TO OUTPUT VCC Y 0.8V 1.2V ± 0.1V 1.5V ± 0.1V 1.8V ± 0.15V 2.5V ± 0.2V 3.3V ± 0.3V TO OUTPUT VCC Y 0.8V 1.2V ± 0.1V 1.5V ± 0.1V 1.8V ± 0.15V 2.5V ± 0.2V 3.3V ± 0.3V TO OUTPUT VCC Y 0.8V 1.2V ± 0.1V 1.5V ± 0.1V 1.8V ± 0.15V 2.5V ± 0.2V 3.3V ± 0.3V Min 2.0 1.5 1.2 1.0 0.8 TA = +25°C Typ 11.6 4.1 3.0 2.7 2.3 2.2 Max 7.5 5.1 4.0 3.2 2.8 TA = -40°C to +85°C Min Max 2.0 1.5 1.2 1.0 0.8 9.1 6.1 5.0 4.0 3.3 TA = -40°C to +125°C Min Max 2.0 1.5 1.2 1.0 0.8 10.0 6.7 5.5 4.4 3.6 Unit ns CL = 10pF see Figure 1 Parameter tpd From Input A Min 2.5 2.0 1.7 1.4 1.2 TA = +25°C Typ 14.7 5.1 3.8 3.6 3.3 3.1 Max 9.0 6.1 4.8 4.5 4.2 TA = -40°C to +85°C Min Max 2.5 2.0 1.7 1.4 1.2 11.2 7.4 6.1 4.8 4.5 TA = -40°C to +125°C Min Max 2.5 2.0 1.7 1.4 1.2 12.3 8.1 6.7 5.3 5.0 Unit ns CL = 15pF see Figure 1 Parameter tpd From Input A TA = +25°C Min 2.9 2.3 2.1 1.7 1.5 Typ 17.7 6.1 4.5 4.4 4.2 4.0 TA = -40°C to +85°C TA = -40°C to +125°C Max Min Max Min Max 10.4 6.8 6.7 5.9 5.7 2.9 2.3 2.1 1.7 1.5 13.1 8.6 7.8 6.8 6.1 2.9 2.3 2.1 1.7 1.5 14.5 9.4 8.6 6.9 6.7 Unit ns CL = 30pF see Figure 1 Parameter tpd From Input A 74AUP1G07 Document number: DS35149 Rev. 1 - 2 Min 3.9 3.2 2.9 2.5 2.3 TA = +25°C Typ 24.6 9.0 7.5 6.8 6.5 6.4 Max 15.6 13.4 12.4 10.7 9.7 6 of 11 www.diodes.com TA = -40°C to +85°C Min Max 3.9 3.2 2.9 2.5 2.3 18.8 13.7 12.6 10.9 10.4 TA = -40°C to +125°C Min Max 3.9 3.2 2.9 2.5 2.3 20.7 13.7 12.6 12.1 11.4 Unit ns August 2012 © Diodes Incorporated 74AUP1G07 Operating and Package Characteristics (@TA = +25°C, unless otherwise specified.) Test Conditions VCC Typ Unit f = 1MHz No Load 0.8V 1.2V ± 0.1V 1.5V ± 0.1V 1.8V ± 0.15V 2.5V ± 0.2V 3.3V ± 0.3V 2.6 2.8 2.9 3.1 3.6 4.2 pF Vi = VCC or GND 0V or 3.3V 1.5 pF Parameter Cpd Power Dissipation Capacitance Ci Input Capacitance 371 SOT353 θJA θJC Notes: Thermal Resistance Junction-to-Ambient (Note 6) 430 X2-DFN1010-6 445 SOT353 X2-DFN1410-6 X2-DFN1010-6 (Note 6 143 190 250 X2-DFN1410-6 Thermal Resistance Junction-to-Case °C/W °C/W 6. Test condition for SOT353, X2-DFN1410-6, and X2-DFN1010-6 devices mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. Parameter Measurement Information VCC Inputs VI TEST S1 tPLZ/tPZL VLOAD RL 5KΩ VM VLOAD CL V∆ VCC/2 2 X VCC 5, 10, 15, 30pF 0.1V 0.1V 0.8V VCC tr/tf ≤3ns 1.2V±0.1V VCC ≤3ns VCC/2 2 X VCC 5, 10, 15, 30pF 1.5V±0.1V VCC ≤3ns VCC/2 2 X VCC 5, 10, 15, 30pF 0.1V 1.8V±0.15V VCC ≤3ns VCC/2 2 X VCC 5, 10, 15, 30pF 0.15V 2.5V±0.2V VCC ≤3ns VCC/2 2 X VCC 5, 10, 15, 30pF 0.15V 3.3V±0.3 V VCC ≤3ns VCC/2 2 X VCC 5, 10, 15, 30pF 0.3V Voltage Waveform Pulse Duration Voltage Waveform Enable and Disable Times Low and High Level Enabling Figure 1. Load Circuit and Voltage Waveforms Notes: A. Includes test lead and test apparatus capacitance. B. All pulses are supplied at pulse repetition rate ≤ 10 MHz. C. Inputs are measured separately one transition per measurement. D. For the open drain device the specified propagation delay tPD is the same as tPLZ and tPZL. 7 of 11 74AUP1G07 www.diodes.com Document number: DS35149 Rev. 1 - 2 August 2012 © Diodes Incorporated 74AUP1G07 Ordering Information Part Number Package Code Packaging 74AUP1G07SE-7 74AUP1G07FZ4-7 74AUP1G07FW4-7 SE FZ4 FW4 SOT353 X2-DFN1410-6 X2-DFN1010-6 7” Tape and Reel Quantity Part Number Suffix 3000/Tape & Reel -7 5000/Tape & Reel -7 5000/Tape & Reel -7 Marking Information (1) SOT353 (Top View) 4 7 5 XX : Identification code Y : Year 0~9 W : Week : A~Z : 1~26 week; a~z : 27~52 week; z represents 52 and 53 week X : A~Z : Internal code XX Y W X 1 2 3 Part Number 74AUP1G07SE Package SOT353 Identification Code XN (2) X2-DFN1410-6 and X2-DFN1010-6 (Top View) XX YWX Part Number 74AUP1G07FZ4 74AUP1G07FW4 74AUP1G07 Document number: DS35149 Rev. 1 - 2 XX : Identification Code Y : Year : 0~9 W : Week : A~Z : 1~26 week; a~z : 27~52 week; z represents 52 and 53 week X : A~Z : Internal code Package X2-DFN1410-6 X2-DFN1010-6 8 of 11 www.diodes.com Identification Code XN XN August 2012 © Diodes Incorporated 74AUP1G07 Package Outline Dimensions (All dimensions in mm.) Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. (1) SOT353 A SOT353 Dim Min Max Typ A 0.10 0.30 0.25 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 Typ F 0.40 0.45 0.425 H 1.80 2.20 2.15 J 0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.22 0.11 0° 8° α All Dimensions in mm B C H K M J D L F (2) X2-DFN1410-6 A1 A3 A Seating Plane D e (Pin #1 ID) L(6x) E Z1(4x) Z(4x) 74AUP1G07 Document number: DS35149 Rev. 1 - 2 X2-DFN1410-6 Dim Min Max Typ 0.39 A –– 0.40 0.02 A1 0.00 0.05 0.13 A3 –– –– b 0.15 0.25 0.20 D 1.35 1.45 1.40 E 0.95 1.05 1.00 0.50 e –– –– L 0.25 0.35 0.30 –– –– 0.10 Z Z1 0.045 0.105 0.075 All Dimensions in mm b(6x) 9 of 11 www.diodes.com August 2012 © Diodes Incorporated 74AUP1G07 Package Outline Dimensions (cont.) (All dimensions in mm.) Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. (3) X2-DFN1010-6 A1 A A3 D (Pin #1 ID) e b1 E K L(6x) X2-DFN1010-6 Dim Min Max Typ A –– 0.40 0.39 A1 0.00 0.05 0.02 A3 –– –– 0.13 b 0.14 0.20 0.17 b1 0.05 0.15 0.10 D 0.95 1.05 1.00 E 0.95 1.05 1.00 e –– –– 0.35 L 0.35 0.45 0.40 K 0.15 –– –– Z –– –– 0.065 All Dimensions in mm b(6x) Z(4x) Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version (1) SOT353 C2 Z C2 Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 C1 G Y X (2) X2-DFN1410-6 X1 C Dimensions C G X X1 Y Y1 Y(6x) Y1 1 74AUP1G07 Document number: DS35149 Rev. 1 - 2 G(4x) Value (in mm) 0.500 0.250 0.250 1.250 0.525 1.250 X(6x) 10 of 11 www.diodes.com August 2012 © Diodes Incorporated 74AUP1G07 Suggested Pad Layout (cont.) Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. (3) X2-DFN1010-6 X1 C Dimensions Y (6x) C G X X1 Y Y1 Y1 1 G(4x) Value (in mm) 0.350 0.150 0.200 0.900 0.550 1.250 X(6x) IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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