MMSTA55/MMSTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · Epitaxial Planar Die Construction Complementary NPN Type Available (MMSTA05/MMSTA06) Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package C · · · · · B Min Max A 0.25 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal E 0.30 E G H Case: SOT-323, Molded Plastic Case Material - UL Flammability Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram MMSTA55 Marking K2H, K2G (See Page 2) MMSTA56 Marking K2G (See Page 2) Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approx.) Maximum Ratings Dim B C Mechanical Data · · · · SOT-323 A K M J D E L C 0.40 G 1.20 1.40 H 1.80 2.20 J 0.0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.18 a 0° 8° All Dimensions in mm B E @ TA = 25°C unless otherwise specified Symbol MMSTA55 MMSTA56 Unit Collector-Base Voltage Characteristic VCBO -60 -80 V Collector-Emitter Voltage VCEO -60 -80 V Emitter-Base Voltage VEBO -4.0 V Collector Current - Continuous (Note 1) IC -500 mA Power Dissipation (Note 1) Pd 200 mW RqJA 625 K/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30167 Rev. 3 - 2 1 of 2 www.diodes.com MMSTA55/MMSTA56 Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage MMSTA55 MMSTA56 V(BR)CBO -60 -80 ¾ V IC = -100mA, IE = 0 Collector-Emitter Breakdown Voltage MMSTA55 MMSTA56 V(BR)CEO -60 -80 ¾ V IC = -1.0mA, IB = 0 V(BR)EBO -4.0 ¾ V Emitter-Base Breakdown Voltage Collector Cutoff Current MMSTA55 MMSTA56 MMSTA55 MMSTA56 IE = -100mA, IC = 0 VCB = -60V, IE = 0 VCB = -80V, IE = 0 VCE = -60V, IBO = 0V VCE = -80V, IBO = 0V ICBO ¾ -100 nA ICEX ¾ -100 nA hFE 100 ¾ ¾ IC = -10mA, VCE = -1.0V IC = -100mA, VCE = -1.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.25 V IC = -100mA, IB = -10mA Base- Emitter Saturation Voltage VBE(SAT) ¾ -1.2 V IC = -100mA, VCE = -1.0V fT 50 ¾ MHz VCE = -1.0V, IC = -100mA, f = 100MHz Collector Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Ordering Information (Note 3) Notes: Device Packaging Shipping MMSTA55-7 MMSTA56-7 SOT-323 3000/Tape & Reel 2. Short duration test pulse used to minimize self-heating effect. 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM K2x = Product Type Marking Code, e.g. K2H = MMSTA55 YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K2x Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30167 Rev. 3 - 2 2 of 2 www.diodes.com MMSTA55/MMSTA56