DIODES BC847BV

SPICE MODELS: BC847BV
Pb
BC847BV
Lead-free
NPN DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR
NEW PRODUCT
Features
·
·
·
·
Epitaxial Die Construction
A
Complementary PNP Type Available (BC857BV)
C1
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 3)
·
·
·
·
·
·
E2
K4V YM
E1
Mechanical Data
·
·
B2
SOT-563
B C
C2
B1
D
G
Case: SOT-563
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Max
Typ
A
0.15
0.30
0.25
B
1.10
1.25
1.20
C
1.55
1.70
1.60
0.50
G
0.90
1.10
1.00
H
1.50
1.70
1.60
K
0.56
0.60
0.60
L
L
0.10
0.30
0.20
SEE NOTE 1
M
0.10
0.18
0.11
K
H
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Min
D
M
Terminal Connections: See Diagram
Dim
Marking (See Page 2): K4V
All Dimensions in mm
Ordering & Date Code Information: See Page 2
C1
B2
E2
E1
B1
C2
Weight: 0.002 grams (approx.)
Maximum Ratings
@ TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
Characteristic
VCBO
50
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
6.0
V
IC
100
mA
Pd
Collector Current
Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage Temperature Range
Notes:
150
mW
RqJA
833
°C/W
Tj, TSTG
-55 to +150
°C
1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
DS30432 Rev. 2 - 2
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BC847BV
ã Diodes Incorporated
NEW PRODUCT
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
(Note 4)
V(BR)CBO
50
—
—
Collector-Emitter Breakdown Voltage
(Note 4)
V(BR)CEO
45
—
—
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
(Note 4)
V(BR)EBO
6
—
—
V
IE = 1mA, IC = 0
DC Current Gain
(Note 4)
hFE
200
290
450
—
VCE = 5.0V, IC = 2.0mA
Collector-Emitter Saturation Voltage
(Note 4)
VCE(SAT)
—
—
100
300
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Saturation Voltage
(Note 4)
VBE(SAT)
—
700
900
—
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Voltage
(Note 4)
VBE
580
—
660
—
700
770
mV
VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 10mA
Collector-Emitter Cutoff Current
(Note 4)
ICBO
ICBO
—
—
15
5.0
nA
µA
VCB = 30V
VCB = 30V, TA = 150°C
fT
100
—
—
MHz
VCE = 5.0V, IC = 10mA,
f = 100MHz
COBO
—
—
4.5
pF
VCB = 10V, f = 1.0MHz
dB
VCE = 5V, RS = 2.0kW,
f = 1.0kHz, BW = 200Hz
Gain Bandwidth Product
Output Capacitance
Noise Figure
NF
—
—
IC = 10mA, IB = 0
V
10
Ordering Information (Note 5)
Notes:
Device
Packaging
Shipping
BC847BV-7
SOT-563
3000/Tape & Reel
4. Short duration pulse test used to minimize self-heating effect.
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K4V = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: P = 2003)
M = Month (ex: 9 = September)
K4V YM
Date Code Key
Year
2003
2004
2005
2006
2007
2008
2009
Code
P
R
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
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BC847BV
0.4
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
Pd, POWER DISSIPATION (mW)
200
150
100
50
IC
IB = 20
0.3
TA = 25°C
0.2
TA = 150°C
0.1
TA = -50°C
0
0
-50
0
50
100
0.1
150
1000
10
1000
100
1000
fT, GAIN BANDWIDTH PRODUCT (MHz)
TA = 150°C
TA = 25°C
100
1
IC, COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Derating Curve - Total
hFE, DC CURRENT GAIN (NORMALIZED)
NEW PRODUCT
250
TA = -50°C
10
VCE = 5V
100
10
1
1
10
1
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs Collector Current
DS30432 Rev. 2 - 2
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1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Gain Bandwidth Product vs Collector Current
BC847BV