SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS FZT851 FZT853 ISSUE 2 - OCTOBER 1995 FEATURES * * * * C Extremely low equivalent on-resistance; RCE(sat) 44mΩ at 5A 6 Amps continuous current, up to 20 Amps peak current Very low saturation voltages Excellent hFE characteristics specified up to 10 Amps E C B PARTMARKING DETAILS COMPLEMENTARY TYPES - DEVICE TYPE IN FULL FZT851 FZT951 FZT853 FZT953 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FZT851 FZT853 UNIT Collector-Base Voltage V CBO 150 200 V Collector-Emitter Voltage V CEO 60 100 V Emitter-Base Voltage V EBO 6 6 V Peak Pulse Current I CM 20 10 A Continuous Collector Current IC 6 A Power Dissipation at T amb=25°C P tot 3 W Operating and Storage Temperature Range T j:T stg -55 to +150 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum 3 - 260 FZT851 FZT851 ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated) SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V (BR)CBO 150 220 V I C=100µA Collector-Emitter Breakdown Voltage V (BR)CER 150 220 V I C =1µA, RB ≤1kΩ Collector-Emitter Breakdown Voltage V (BR)CEO Emitter-Base Breakdown Voltage V (BR)EBO Collector Cut-Off Current I CBO 50 1 nA µA V CB=120V V CB=120V, T amb=100°C Collector Cut-Off Current I CER R ≤1kΩ 50 1 nA µA V CB=120V V CB=120V, T amb=100°C Emitter Cut-Off Current I EBO 10 nA V EB=6V Collector-Emitter Saturation V CE(sat) Voltage 50 100 170 375 mV mV mV mV I C=0.1A, I B=5mA* I C=1A, I B=50mA* I C=2A, I B=50mA* I C=6A, I B=300mA* Base-Emitter Saturation Voltage V BE(sat) 1200 mV I C=6A, I B=300mA* Base-Emitter Turn-On Voltage V BE(on) Static Forward Current Transfer Ratio h FE Transition Frequency fT 130 Output Capacitance C obo 45 pF V CB=10V, f=1MHz Switching Times t on t off 45 1100 ns ns I C=1A, I B1=100mA I B2=100mA, V CC=10V TYPICAL CHARACTERISTICS 1.6 8 V 1150 mV I C=10mA* I E=100µA hFE - Normalised Gain V 0.6 0.4 IC/IB=10 IC/IB=50 0.2 0 0.01 0.1 1 10 MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 0.6 VCE=5V VCE=1V 100 0.4 0.2 0.1 1 100 10 hFE v IC VCE=1V 2.0 1.5 IC/IB=10 IC/IB=50 1.0 1.5 1.0 I C =6A, V CE=1V* 0.5 0.001 I C=100mA, V CE=10V f=50MHz 0.01 0.1 1 10 100 0.01 0.1 1 10 IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC Single Pulse Test Tamb=25 °C 100 10 1 0.001 IC - Collector Current (Amps) DC 1s 100ms 10ms 1ms 100µs 0.1 0.1 1 10 100 VCE - Collector Voltage (V) Safe Operating Area 3 - 261 200 0.8 IC - Collector Current (Amps) 2.0 I C=10mA, V CE=1V I C=2A, V CE=1V* I C=5A, V CE=1V* I C=10A, V CE=1V* 300 1.0 VCE(sat) v IC IC - Collector Current (A) 200 200 120 50 1.2 IC - Collector Current (Amps) 0.5 100 100 75 25 300 1.4 0 0.01 100 VBE - (Volts) 6 85 VBE(sat) - (Volts) 60 VCE(sat) - (Volts) 0.8 hFE - Typical Gain PARAMETER 3 - 262 100 FZT851 FZT851 ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated) SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V (BR)CBO 150 220 V I C=100µA Collector-Emitter Breakdown Voltage V (BR)CER 150 220 V I C =1µA, RB ≤1kΩ Collector-Emitter Breakdown Voltage V (BR)CEO Emitter-Base Breakdown Voltage V (BR)EBO Collector Cut-Off Current I CBO 50 1 nA µA V CB=120V V CB=120V, T amb=100°C Collector Cut-Off Current I CER R ≤1kΩ 50 1 nA µA V CB=120V V CB=120V, T amb=100°C Emitter Cut-Off Current I EBO 10 nA V EB=6V Collector-Emitter Saturation V CE(sat) Voltage 50 100 170 375 mV mV mV mV I C=0.1A, I B=5mA* I C=1A, I B=50mA* I C=2A, I B=50mA* I C=6A, I B=300mA* Base-Emitter Saturation Voltage V BE(sat) 1200 mV I C=6A, I B=300mA* Base-Emitter Turn-On Voltage V BE(on) Static Forward Current Transfer Ratio h FE Transition Frequency fT 130 Output Capacitance C obo 45 pF V CB=10V, f=1MHz Switching Times t on t off 45 1100 ns ns I C=1A, I B1=100mA I B2=100mA, V CC=10V TYPICAL CHARACTERISTICS 1.6 8 V 1150 mV I C=10mA* I E=100µA hFE - Normalised Gain V 0.6 0.4 IC/IB=10 IC/IB=50 0.2 0 0.01 0.1 1 10 MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 0.6 VCE=5V VCE=1V 100 0.4 0.2 0.1 1 100 10 hFE v IC VCE=1V 2.0 1.5 IC/IB=10 IC/IB=50 1.0 1.5 1.0 I C =6A, V CE=1V* 0.5 0.001 I C=100mA, V CE=10V f=50MHz 0.01 0.1 1 10 100 0.01 0.1 1 10 IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC Single Pulse Test Tamb=25 °C 100 10 1 0.001 IC - Collector Current (Amps) DC 1s 100ms 10ms 1ms 100µs 0.1 0.1 1 10 100 VCE - Collector Voltage (V) Safe Operating Area 3 - 261 200 0.8 IC - Collector Current (Amps) 2.0 I C=10mA, V CE=1V I C=2A, V CE=1V* I C=5A, V CE=1V* I C=10A, V CE=1V* 300 1.0 VCE(sat) v IC IC - Collector Current (A) 200 200 120 50 1.2 IC - Collector Current (Amps) 0.5 100 100 75 25 300 1.4 0 0.01 100 VBE - (Volts) 6 85 VBE(sat) - (Volts) 60 VCE(sat) - (Volts) 0.8 hFE - Typical Gain PARAMETER 3 - 262 100