SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR FCX718 ISSSUE 1 - DECEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 6A Peak Pulse Current Excellent HFE Characteristics up to 6Amps Extremely Low Saturation Voltage E.g. 16mv Typ. Extremely Low Equivalent On-resistance; RCE(sat) 96mΩ at 2.5A C E C Partmarking Detail - B 718 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO -20 V VCEO -20 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ** ICM -6 A Continuous Collector Current IC -2.5 A Base Current IB -500 mA Power Dissipation at Tamb=25°C Ptot 1 † 2 ‡ W W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C † recommended Ptot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components. FCX718 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -20 -65 MAX. V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -20 -55 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 -8.8 V IE=-100µA Collector Cut-Off Current ICBO -100 nA VCB=-15V Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector Emitter Cut-Off Current ICES -100 nA VCES=-15V Collector-Emitter Saturation Voltage VCE(sat) -16 -130 -145 -40 -200 -220 -300 mV mV mV mV IC=-0.1A, IB=-10mA* IC=-1A, IB=-20mA* IC=-1.5A, IB=-50mA* IC=-2.5A, IB=-200mA* Base-Emitter Saturation Voltage VBE(sat) -0.98 -1.1 V IC=-2.5A, IB=-200mA* Base-Emitter Turn-On Voltage VBE(on) -0.85 -0.95 V IC=-2.5A, VCE=-2V* Static Forward Current Transfer Ratio hFE 300 300 150 35 15 475 450 230 70 30 Transition Frequency fT 150 180 IC=-10mA, VCE=-2V* IC=-0.1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-4A, VCE=-2V* IC=-6A, VCE=-2V* MHz IC=-50mA, VCE=-10V f=100MHz Output Capacitance Cobo 21 pF VCB=-10V, f=1MHz Turn-On Time t(on) 40 ns Turn-Off Time t(off) 670 ns VCC=-15V, IC=-0.75A IB1=IB2=15mA 30 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% FCX718 TYPICAL CHARACTERISTICS 0.8 0.8 +25°C IC/IB=50 0.6 0.6 IC/IB=10 IC/IB=50 IC/IB=100 0.4 0.2 0 -55°C +25°C +100°C +150°C 0.4 0.2 1m 10m 100m 1 10 0 1m 10m IC - Collector Current (A) VCE(sat) v IC 100m 1 10 IC - Collector Current (A) VCE(sat) v IC 900 IC/IB=50 VCE=2V 0.8 750 +100°C 0.6 600 450 +25°C 04 300 -55°C +25°C +100°C +150°C 0.2 -55°C 150 0 1m 0 10m 100m 1 10 10m 1m IC - Collector Current (A) hFE v IC 100m 1 10 IC - Collector Current (A) VBE(sat) v IC 1.0 10 0.8 1 0.6 DC 1s 100ms 10ms 1ms 100µs 0.4 0.1 -55°C +25°C +100°C +150°C 0.2 0 1m 10m 100m 1 IC - Collector Current (A) VBE(on) v IC 10 0.01 100m 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area 100