ONSEMI MC14503BCP

MC14503B
Hex Non-Inverting 3-State
Buffer
The MC14503B is a hex non–inverting buffer with 3–state outputs,
and a high current source and sink capability. The 3–state outputs
make it useful in common bussing applications. Two disable controls
are provided. A high level on the Disable A input causes the outputs of
buffers 1 through 4 to go into a high impedance state and a high level
on the Disable B input causes the outputs of buffers 5 and 6 to go into a
high impedance state.
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MARKING
DIAGRAMS
• 3–State Outputs
• TTL Compatible — Will Drive One TTL Load Over Full
16
PDIP–16
P SUFFIX
CASE 648
Temperature Range
• Supply Voltage Range = 3.0 Vdc to 18 Vdc
• Two Disable Controls for Added Versatility
• Pin for Pin Replacement for MM80C97 and 340097
MC14503BCP
AWLYYWW
1
16
SOIC–16
D SUFFIX
CASE 751B
14503B
AWLYWW
1
MAXIMUM RATINGS (Voltages Referenced to VSS) (Note 2.)
Parameter
Symbol
VDD
Vin, Vout
DC Supply Voltage Range
Input or Output Voltage Range
(DC or Transient)
16
Value
Unit
– 0.5 to +18.0
V
– 0.5 to VDD + 0.5
V
Iin
Input Current
(DC or Transient) per Pin
± 10
mA
Iout
Output Current
(DC or Transient) per Pin
± 25
mA
PD
Power Dissipation,
per Package (Note 3.)
500
mW
Ambient Temperature Range
– 55 to +125
°C
Tstg
Storage Temperature Range
– 65 to +150
°C
TL
Lead Temperature
(8–Second Soldering)
260
°C
2. Maximum Ratings are those values beyond which damage to the device
may occur.
3. Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high–impedance circuit. For proper operation, Vin and Vout should be constrained
to the range VSS
(Vin or Vout)
VDD.
Unused inputs must always be tied to an appropriate logic voltage level (e.g.,
either VSS or VDD). Unused outputs must be left open.
v
 Semiconductor Components Industries, LLC, 2000
March, 2000 – Rev. 3
MC14503B
AWLYWW
1
A
= Assembly Location
WL or L = Wafer Lot
YY or Y = Year
WW or W = Work Week
ORDERING INFORMATION
TA
v
SOEIAJ–16
F SUFFIX
CASE 966
1
Device
Package
Shipping
MC14503BCP
PDIP–16
2000/Box
MC14503BD
SOIC–16
48/Rail
MC14503BDR2
SOIC–16
2500/Tape & Reel
MC14503BF
SOEIAJ–16
See Note 1.
MC14503BFEL
SOEIAJ–16
See Note 1.
1. For ordering information on the EIAJ version of
the SOIC packages, please contact your local
ON Semiconductor representative.
Publication Order Number:
MC14503B/D
MC14503B
PIN ASSIGNMENT
DIS A
1
16
VDD
IN 1
2
15
DIS B
OUT 1
3
14
IN 6
IN 2
4
13
OUT 6
OUT 2
5
12
IN 5
IN 3
6
11
OUT 5
OUT 3
7
10
IN 4
VSS
8
9
OUT 4
TRUTH TABLE
LOGIC DIAGRAM
Inn
Appropriate
Disable
Input
Outn
0
0
0
1
0
1
X
1
High
Impedance
DISABLE B
IN 5
IN 6
IN 1
X = Don’t Care
IN 2
IN 3
IN 4
DISABLE A
15
12
11
14
13
2
3
4
5
6
7
10
9
1
VDD = PIN 16
VSS = PIN 8
CIRCUIT DIAGRAM
ONE OF TWO/FOUR BUFFERS
VDD
* INn
OUTn
* DISABLE
* INPUT
VSS
TO OTHER BUFFERS
* Diode protection on all inputs (not shown)
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2
OUT 5
OUT 6
OUT 1
OUT 2
OUT 3
OUT 4
MC14503B
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ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
Characteristic
Output Voltage
Vin = 0
Symbol
– 55_C
25_C
125_C
VDD
Vdc
Min
Max
Min
Typ (4.)
Max
Min
Max
Unit
“0” Level
VOL
5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
0.05
0.05
0.05
Vdc
“1” Level
VOH
5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.95
9.95
14.95
—
—
—
Vdc
Input Voltage
“0” Level
(VO = 3.6 or 1.4 Vdc)
(VO = 7.2 or 2.8 Vdc)
(VO = 11.5 or 3.5 Vdc)
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
1.5
3.0
4.0
“1” Level
VIH
5.0
10
15
3.5
7.0
11
—
—
—
3.5
7.0
11
2.75
5.50
8.25
—
—
—
3.5
7.0
11
—
—
—
4.5
5.0
5.0
10
15
– 4.3
– 5.8
– 1.2
– 3.1
– 8.2
—
—
—
—
—
– 3.6
– 4.8
– 1.02
– 2.6
– 6.8
– 5.0
– 6.1
– 1.4
– 3.7
– 14.1
—
—
—
—
—
– 2.5
– 3.0
– 0.7
– 1.8
– 4.8
—
—
—
—
—
IOL
4.5
5.0
10
15
2.2
2.6
6.5
19.2
—
—
—
—
1.8
2.1
5.5
16.1
2.1
2.3
6.2
25
—
—
—
—
1.2
1.3
3.8
11.2
—
—
—
—
mAdc
Input Current
Iin
15
—
± 0.1
—
± 0.00001
± 0.1
—
± 1.0
µAdc
Input Capacitance
(Vin = 0)
Cin
—
—
—
—
5.0
7.5
—
—
pF
Quiescent Current
(Per Package)
IQ
5.0
10
15
—
—
—
1.0
2.0
4.0
—
—
—
0.002
0.004
0.006
1.0
2.0
4.0
—
—
—
30
60
120
µAdc
Total Supply Current (5.) (6.)
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs)
(All outputs switching,
50% Duty Cycle)
IT
5.0
10
15
Three–State Output Leakage
Current
ITL
15
Vin = VDD
(VO = 1.4 or 3.6 Vdc)
(VO = 2.8 or 7.2 Vdc)
(VO = 3.5 or 11.5 Vdc)
Output Drive Current
(VOH = 2.5 Vdc)
(VOH = 2.5 Vdc)
(VOH = 4.6 Vdc)
(VOH = 9.5 Vdc)
(VOH = 13.5 Vdc)
Vdc
Vdc
IOH
Source
(VOL = 0.4 Vdc)
(VOL = 0.4 Vdc)
(VOL = 0.5 Vdc)
(VOL = 1.5 Vdc)
Sink
mAdc
IT = (2.5 µA/kHz) f + IDD
IT = (6.0 µA/kHz) f + IDD
IT = (10 µA/kHz) f + IDD
± 0.1
—
—
± 0.0001
± 0.1
µAdc
—
± 3.0
4. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
5. The formulas given are for the typical characteristics only at 25_C.
6. To calculate total supply current at loads other than 50 pF:
IT(CL) = IT(50 pF) + (CL – 50) Vfk
where: IT is in µA (per package), CL in pF, V = (VDD – VSS) in volts, f in kHz is input frequency, and k = 0.006.
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3
µAdc
MC14503B
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SWITCHING CHARACTERISTICS (7.) (CL = 50 pF, TA = 25_C)
Characteristic
Symbol
All Types
VDD
VCC
Typ (8.)
Max
5.0
10
15
45
23
18
90
45
35
5.0
10
15
45
23
18
90
45
35
5.0
10
15
75
35
25
150
70
50
5.0
10
15
75
35
25
150
70
50
Unit
Output Rise Time
tTLH = (0.5 ns/pF) CL + 20 ns
tTLH = (0.3 ns/pF) CL + 8.0 ns
tTLH = (0.2 ns/pF) CL + 8.0 ns
tTLH
ns
Output Fall Time
tTHL = (0.5 ns/pF) CL + 20 ns
tTHL = (0.3 ns/pF) CL + 8.0 ns
tTHL = (0.2 ns/pF) CL + 8.0 ns
tTHL
Turn–Off Delay Time, all Outputs
tPLH = (0.3 ns/pF) CL + 60 ns
tPLH = (0.15 ns/pF) CL + 27 ns
tPLH = (0.1 ns/pF) CL + 20 ns
tPLH
Turn–On Delay Time, all Outputs
tPHL = (0.3 ns/pF) CL + 60 ns
tPHL = (0.15 ns/pF) CL + 27 ns
tPHL = (0.1 ns/pF) CL + 20 ns
tPHL
3–State Propagation Delay Time
Output “1” to High Impedance
tPHZ
5.0
10
15
75
40
35
150
80
70
ns
Output “0” to High Impedance
tPLZ
5.0
10
15
80
40
35
160
80
70
ns
High Impedance to “1” Level
tPZH
5.0
10
15
65
25
20
130
50
40
ns
High Impedance to “0” Level
tPZL
5.0
10
15
100
35
25
200
70
50
ns
ns
ns
ns
7. The formulas given are for the typical characteristics only at 25_C.
8. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
DISABLE
INPUT
20 ns
20 ns
VDD
90%
VDD
16
50%
INPUT
INPUT
OUTPUT
VSS
90%
OUTPUT
CL
tTLH
tPLH
Figure 1. Switching Time Test Circuit and Waveforms
(tTLH, tTHL, tPHL, and tPLH)
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4
VSS
tPHL
tPLH
PULSE
GENERATOR
10%
VOH
50%
10%
VOL
tTHL
tPHL
MC14503B
DISABLE INPUT
DISABLE INPUT
PULSE
GENERATOR
VDD
tPHZ, tPZH CIRCUIT
tPLZ, tPZL CIRCUIT
PULSE
GENERATOR
VDD
16
16
OUTPUT
INPUT
1k
8
VSS
OUTPUT
INPUT
CL
8
20 ns
VSS
20 ns
VDD
90%
50%
DISABLE INPUT
1k
10%
tPZL
tPLZ
VOH
90%
10%
OUTPUT FOR tPZH, tPZL CIRCUIT
VSS
≈ VOL + 0.05 V
tPHZ
tPZH
OUTPUT FOR tPHZ, tPLZ CIRCUIT
≈ VOH – 0.15 V
90%
10%
Figure 2. 3–State AC Test Circuit and Waveforms
(tPLZ, tPHZ, tPZH, tPZL)
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5
VOL
CL
MC14503B
PACKAGE DIMENSIONS
PDIP–16
P SUFFIX
PLASTIC DIP PACKAGE
CASE 648–08
ISSUE R
–A–
16
9
1
8
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
B
F
C
DIM
A
B
C
D
F
G
H
J
K
L
M
S
L
S
–T–
SEATING
PLANE
K
H
G
D
M
J
16 PL
0.25 (0.010)
M
T A
M
16
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
9
–B–
1
P
8 PL
0.25 (0.010)
8
M
B
S
G
R
K
F
X 45 _
C
SEATING
PLANE
J
M
D
16 PL
0.25 (0.010)
MILLIMETERS
MIN
MAX
18.80
19.55
6.35
6.85
3.69
4.44
0.39
0.53
1.02
1.77
2.54 BSC
1.27 BSC
0.21
0.38
2.80
3.30
7.50
7.74
0_
10 _
0.51
1.01
SOIC–16
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751B–05
ISSUE J
–A–
–T–
INCHES
MIN
MAX
0.740
0.770
0.250
0.270
0.145
0.175
0.015
0.021
0.040
0.70
0.100 BSC
0.050 BSC
0.008
0.015
0.110
0.130
0.295
0.305
0_
10 _
0.020
0.040
M
T B
S
A
S
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6
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80
10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.386
0.393
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0_
7_
0.229
0.244
0.010
0.019
MC14503B
PACKAGE DIMENSIONS
SOEIAJ–16
F SUFFIX
PLASTIC EIAJ SOIC PACKAGE
CASE 966–01
ISSUE O
16
LE
9
Q1
M_
E HE
1
L
8
DETAIL P
Z
D
e
VIEW P
A
A1
b
0.13 (0.005)
c
M
0.10 (0.004)
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7
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS D AND E DO NOT INCLUDE
MOLD FLASH OR PROTRUSIONS AND ARE
MEASURED AT THE PARTING LINE. MOLD FLASH
OR PROTRUSIONS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
5. THE LEAD WIDTH DIMENSION (b) DOES NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08 (0.003)
TOTAL IN EXCESS OF THE LEAD WIDTH
DIMENSION AT MAXIMUM MATERIAL CONDITION.
DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OR THE FOOT. MINIMUM SPACE
BETWEEN PROTRUSIONS AND ADJACENT LEAD
TO BE 0.46 ( 0.018).
DIM
A
A1
b
c
D
E
e
HE
L
LE
M
Q1
Z
MILLIMETERS
MIN
MAX
–––
2.05
0.05
0.20
0.35
0.50
0.18
0.27
9.90
10.50
5.10
5.45
1.27 BSC
7.40
8.20
0.50
0.85
1.10
1.50
10 _
0_
0.70
0.90
–––
0.78
INCHES
MIN
MAX
–––
0.081
0.002
0.008
0.014
0.020
0.007
0.011
0.390
0.413
0.201
0.215
0.050 BSC
0.291
0.323
0.020
0.033
0.043
0.059
10 _
0_
0.028
0.035
–––
0.031
MC14503B
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MC14503B/D