ONSEMI MBT3946DW1T1G

MBT3946DW1T1
Dual General Purpose
Transistor
The MBT3946DW1T1 device is a spin−off of our popular
SOT−23/SOT−323 three−leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT−363−6
surface mount package. By putting two discrete devices in one
package, this device is ideal for low−power surface mount
applications where board space is at a premium.
•
•
•
•
•
•
•
•
hFE, 100−300
Low VCE(sat), ≤ 0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
Device Marking: MBT3946DW1T1 = 46
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
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(3)
(2)
(1)
Q1
Q2
(4)
(5)
(6)
MBT3946DW1T1*
*Q1 PNP
Q2 NPN
6 5
4
MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage
(NPN)
(PNP)
VCEO
Collector −Base Voltage
(NPN)
(PNP)
VCBO
Emitter −Base Voltage
(NPN)
(PNP)
VEBO
Collector Current − Continuous
(NPN)
(PNP)
Electrostatic Discharge
Value
1
Unit
Vdc
Total Package Dissipation (Note 1)
TA = 25°C
3
SOT−363−6/SC−88
CASE 419B
Style 1
40
−40
Vdc
60
−40
MARKING
DIAGRAM
Vdc
6.0
−5.0
IC
mAdc
200
−200
ESD
46d
HBM>16000,
MM>2000
V
46 = Specific Device Code
d = Date Code
THERMAL CHARACTERISTICS
Characteristic
2
Symbol
Max
Unit
PD
150
mW
ORDERING INFORMATION
Thermal Resistance
Junction−to−Ambient
RJA
833
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to +150
°C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
Device
Package
Shipping†
MBT3946DW1T1
SOT−363
3000/Tape & Reel
MBT3946DW1T1G SOT−363
3000/Tape & Reel
MBT3946DW1T2
SOT−363
3000/Tape & Reel
MBT3946DW1T2G SOT−363
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2004
January, 2004 − Rev. 2
1
Publication Order Number:
MBT3946DW1T1/D
MBT3946DW1T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
40
−40
−
−
60
−40
−
−
6.0
−5.0
−
−
−
−
50
−50
−
−
50
−50
(NPN)
40
70
100
60
30
−
−
300
−
−
(PNP)
60
80
100
60
30
−
−
300
−
−
(NPN)
−
−
0.2
0.3
(PNP)
−
−
−0.25
−0.4
(NPN)
0.65
−
0.85
0.95
(PNP)
−0.65
−
−0.85
−0.95
300
250
−
−
−
−
4.0
4.5
−
−
8.0
10.0
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0)
(IC = −1.0 mAdc, IB = 0)
(NPN)
(PNP)
Collector −Base Breakdown Voltage
(IC = 10 Adc, IE = 0)
(IC = −10 Adc, IE = 0)
(NPN)
(PNP)
Emitter −Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
(IE = −10 Adc, IC = 0)
(NPN)
(PNP)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = −30 Vdc, VEB = −3.0 Vdc)
(NPN)
(PNP)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = −30 Vdc, VEB = −3.0 Vdc)
(NPN)
(PNP)
V(BR)CEO
Vdc
V(BR)CBO
Vdc
V(BR)EBO
Vdc
IBL
nAdc
ICEX
nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = −0.1 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
hFE
−
VCE(sat)
Vdc
VBE(sat)
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)
(NPN)
(PNP)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz)
(NPN)
(PNP)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)
(NPN)
(PNP)
fT
MHz
Cobo
pF
Cibo
2. Pulse Test: Pulse Width ≤ 300 s; Duty Cycle ≤ 2.0%.
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2
pF
MBT3946DW1T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
(NPN)
(PNP)
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
(NPN)
(PNP)
Small −Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
(NPN)
(PNP)
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
(NPN)
(PNP)
Noise Figure
(VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k, f = 1.0 kHz)
(VCE = −5.0 Vdc, IC = −100 Adc, RS = 1.0 k, f = 1.0 kHz)
(NPN)
(PNP)
Min
Max
1.0
2.0
10
12
0.5
0.1
8.0
10
100
100
400
400
1.0
3.0
40
60
−
−
5.0
4.0
hie
Unit
k
X 10− 4
hre
hfe
−
mhos
hoe
NF
dB
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 3.0 Vdc, VBE = − 0.5 Vdc)
(VCC = −3.0 Vdc, VBE = 0.5 Vdc)
(NPN)
(PNP)
td
−
−
35
35
Rise Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
(IC = −10 mAdc, IB1 = −1.0 mAdc)
(NPN)
(PNP)
tr
−
−
35
35
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc)
(VCC = −3.0 Vdc, IC = −10 mAdc)
(NPN)
(PNP)
ts
−
−
200
225
Fall Time
(IB1 = IB2 = 1.0 mAdc)
(IB1 = IB2 = −1.0 mAdc)
(NPN)
(PNP)
tf
−
−
50
75
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3
ns
ns
MBT3946DW1T1
(NPN)
DUTY CYCLE = 2%
300 ns
+3 V
+10.9 V
10 < t1 < 500 s
275
+3 V
t1
+10.9 V
DUTY CYCLE = 2%
275
10 k
10 k
0
−0.5 V
Cs < 4 pF*
< 1 ns
Cs < 4 pF*
1N916
−9.1 V′
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C
TJ = 125°C
10
5000
(NPN)
2000
5.0
Cibo
3.0
Cobo
2.0
(NPN)
VCC = 40 V
IC/IB = 10
3000
Q, CHARGE (pC)
CAPACITANCE (pF)
7.0
1000
700
500
QT
300
200
QA
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
100
70
50
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
REVERSE BIAS VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitance
Figure 4. Charge Data
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4
200
MBT3946DW1T1
(NPN)
500
500
IC/IB = 10
100
70
tr @ VCC = 3.0 V
50
30
20
VCC = 40 V
IC/IB = 10
300
200
t r, RISE TIME (ns)
TIME (ns)
300
200
40 V
100
70
50
30
20
15 V
10
7
5
10
(NPN)
2.0 V
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time
Figure 6. Rise Time
IC/IB = 10
200
500
t′s = ts − 1/8 tf
IB1 = IB2
VCC = 40 V
IB1 = IB2
300
200
IC/IB = 20
t f , FALL TIME (ns)
t s′ , STORAGE TIME (ns)
IC/IB = 20
200
(NPN)
IC, COLLECTOR CURRENT (mA)
500
300
200
7
5
100
70
IC/IB = 20
50
IC/IB = 10
30
20
10
7
5
IC/IB = 10
30
20
10
(NPN)
1.0
100
70
50
2.0 3.0
5.0 7.0 10
20
30
50 70 100
7
5
200
(NPN)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
200
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
14
12
SOURCE RESISTANCE = 200 IC = 1.0 mA
f = 1.0 kHz
SOURCE RESISTANCE = 200 IC = 0.5 mA
8
6
SOURCE RESISTANCE = 1.0 k
IC = 50 A
4
2
0
0.1
SOURCE RESISTANCE = 500 IC = 100 A
0.2
0.4
1.0
2.0
10
IC = 0.5 mA
10
IC = 50 A
8
IC = 100 A
6
4
2
(NPN)
4.0
IC = 1.0 mA
12
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
10
20
40
0
100
(NPN)
0.1
0.2
0.4
1.0
2.0
4.0
10
20
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (k OHMS)
Figure 9. Noise Figure
Figure 10. Noise Figure
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5
40
100
MBT3946DW1T1
(NPN)
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
hoe, OUTPUT ADMITTANCE ( mhos)
300
h fe , CURRENT GAIN
(NPN)
200
100
70
50
30
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
20
10
5
2
1
10
(NPN)
50
0.1
0.2
hre , VOLTAGE FEEDBACK RATIO (x 10 −4)
h ie , INPUT IMPEDANCE (k OHMS)
20
(NPN)
5.0
2.0
1.0
0.5
0.2
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
10
5.0
10
Figure 12. Output Admittance
Figure 11. Current Gain
10
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
10
10
7.0
(NPN)
5.0
3.0
2.0
1.0
0.7
0.5
0.1
Figure 13. Input Impedance
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 14. Voltage Feedback Ratio
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6
MBT3946DW1T1
h FE, DC CURRENT GAIN (NORMALIZED)
(NPN)
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C
VCE = 1.0 V
(NPN)
+25°C
1.0
0.7
−55 °C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
70
50
100
200
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 15. DC Current Gain
1.0
TJ = 25°C
(NPN)
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1.0
1.2
TJ = 25°C
(NPN)
(NPN)
VBE(sat) @ IC/IB =10
0.8
VBE @ VCE =1.0 V
0.6
0.4
VCE(sat) @ IC/IB =10
VC FOR VCE(sat)
0
−55 °C TO +25°C
−0.5
−55 °C TO +25°C
−1.0
+25°C TO +125°C
VB FOR VBE(sat)
−1.5
0.2
0
+25°C TO +125°C
0.5
COEFFICIENT (mV/ °C)
V, VOLTAGE (VOLTS)
1.0
1.0
2.0
5.0
10
20
50
100
−2.0
200
0
20
40
60
80
100
120
140
160
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 17. “ON” Voltages
Figure 18. Temperature Coefficients
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7
180 200
MBT3946DW1T1
(PNP)
3V
3V
< 1 ns
+9.1 V
275
275
< 1 ns
10 k
+0.5 V
10 k
0
Cs < 4 pF*
10.6 V
300 ns
DUTY CYCLE = 2%
Cs < 4 pF*
1N916
10 < t1 < 500 s
t1
10.9 V
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
Figure 19. Delay and Rise Time
Equivalent Test Circuit
Figure 20. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C
TJ = 125°C
10
5000
(PNP)
Cobo
5.0
VCC = 40 V
IC/IB = 10
3000
2000
Q, CHARGE (pC)
CAPACITANCE (pF)
7.0
Cibo
3.0
2.0
(PNP)
1000
700
500
300
200
QT
QA
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE BIAS (VOLTS)
100
70
50
20 30 40
1.0
2.0 3.0
Figure 21. Capacitance
5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
200
Figure 22. Charge Data
500
500
IC/IB = 10
(PNP)
300
200
(PNP)
300
200
VCC = 40 V
IB1 = IB2
100
70
50
tr @ VCC = 3.0 V
15 V
30
20
t f , FALL TIME (ns)
TIME (ns)
IC/IB = 20
100
70
50
30
20
IC/IB = 10
40 V
10
7
5
10
2.0 V
7
5
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 23. Turn −On Time
Figure 24. Fall Time
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8
200
MBT3946DW1T1
(PNP)
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = − 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
SOURCE RESISTANCE = 200 IC = 1.0 mA
4.0
f = 1.0 kHz
SOURCE RESISTANCE = 200 IC = 0.5 mA
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 A
2.0
SOURCE RESISTANCE = 2.0 k
IC = 100 A
1.0
0
0.1
0.2
0.4
IC = 1.0 mA
10
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
5.0
IC = 0.5 mA
8
6
4
IC = 50 A
2
IC = 100 A
(PNP)
(PNP)
1.0 2.0 4.0
10
f, FREQUENCY (kHz)
20
40
0
100
0.1
0.2
40
0.4
1.0 2.0
4.0
10
20
Rg, SOURCE RESISTANCE (k OHMS)
Figure 25.
100
Figure 26.
h PARAMETERS
(VCE = − 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
hoe, OUTPUT ADMITTANCE ( mhos)
300
h fe , DC CURRENT GAIN
(PNP)
200
100
70
50
(PNP)
70
50
30
20
10
7
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5
5.0 7.0 10
0.1
0.2
h ie , INPUT IMPEDANCE (k OHMS)
20
(PNP)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 28. Output Admittance
hre , VOLTAGE FEEDBACK RATIO (x 10 −4)
Figure 27. Current Gain
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
10
7.0
(PNP)
5.0
3.0
2.0
1.0
0.7
0.5
0.1
Figure 29. Input Impedance
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 30. Voltage Feedback Ratio
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9
MBT3946DW1T1
(PNP)
h FE, DC CURRENT GAIN (NORMALIZED)
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C
VCE = 1.0 V
+25°C
1.0
0.7
−55 °C
0.5
0.3
(PNP)
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
20
30
50
70
100
200
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 31. DC Current Gain
1.0
TJ = 25°C
(PNP)
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
IB, BASE CURRENT (mA)
0.7
1.0
2.0
3.0
5.0
7.0
10
Figure 32. Collector Saturation Region
TJ = 25°C
V, VOLTAGE (VOLTS)
0.8
V , TEMPERATURE COEFFICIENTS (mV/ °C)
1.0
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
0.6
(PNP)
0.4
VCE(sat) @ IC/IB = 10
0.2
0
1.0
2.0
50
5.0
10
20
IC, COLLECTOR CURRENT (mA)
100
1.0
0.5
0
+25°C TO +125°C
−55 °C TO +25°C
(PNP)
−0.5
+25°C TO +125°C
−1.0
−55 °C TO +25°C
VB FOR VBE(sat)
−1.5
−2.0
200
VC FOR VCE(sat)
0
Figure 33. “ON” Voltages
20
40
60
80 100 120 140
IC, COLLECTOR CURRENT (mA)
160
Figure 34. Temperature Coefficients
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10
180 200
MBT3946DW1T1
PACKAGE DIMENSIONS
SOT−363−6/SC−88
CASE 419B−02
ISSUE L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
A
G
6
5
4
1
2
3
DIM
A
B
C
D
G
H
J
K
N
S
−B−
S
D 6 PL
0.2 (0.008)
M
B
M
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
N
J
C
K
H
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm inches
Figure 35. SC−88/SC70−6
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
11
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
−−−
0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
EMITTER 2
BASE 2
COLLECTOR 1
EMITTER 1
BASE 1
COLLECTOR 2
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
−−−
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
MBT3946DW1T1
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