ONSEMI NST3946DXV6T5G

NST3946DXV6T1G,
NST3946DXV6T5G
Complementary General
Purpose Transistor
The NST3946DXV6T1 device is a spin-off of our popular
SOT−23/SOT−323 three-leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT−563
six-leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low-power surface mount
applications where board space is at a premium.
•
•
•
•
•
•
hFE, 100−300
Low VCE(sat), ≤ 0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
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SOT−563
CASE 463A
(3)
Q2
(4)
VCEO
Collector −Base Voltage
(NPN)
(PNP)
VCBO
Emitter −Base Voltage
(NPN)
(PNP)
VEBO
Electrostatic Discharge
(5)
(6)
NST3946DXV6T1*
Symbol
Collector −Emitter Voltage
(NPN)
(PNP)
Collector Current − Continuous
(NPN)
(PNP)
(1)
Q1
Table 1. MAXIMUM RATINGS
Rating
(2)
IC
ESD
Value
Unit
*Q1 PNP
Q2 NPN
Vdc
40
−40
MARKING DIAGRAM
Vdc
60
−40
46 MG
G
Vdc
6.0
−5.0
mAdc
46 = Specific Device Code
M = Date Code
G
= Pb-Free Package
V
(Note: Microdot may be in either location)
200
−200
HBM>16000,
MM>2000
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping†
NST3946DXV6T1G SOT−563
(Pb-Free)
4,000/Tape & Reel
NST3946DXV6T5G SOT−563
(Pb-Free)
8,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 2
1
Publication Order Number:
NST3946DXV6T1/D
NST3946DXV6T1G, NST3946DXV6T5G
Table 2. THERMAL CHARACTERISTICS
Characteristic (One Junction Heated)
Total Device Dissipation
TA = 25°C
Symbol
Max
Unit
PD
357
(Note 1)
2.9
(Note 1)
mW
Derate above 25°C
Thermal Resistance
Junction-to-Ambient
Characteristic (Both Junctions Heated)
Total Device Dissipation
TA = 25°C
mW/°C
RqJA
350
(Note 1)
°C/W
Symbol
Max
Unit
PD
500
(Note 1)
4.0
(Note 1)
mW
Derate above 25°C
mW/°C
Thermal Resistance Junction-to-Ambient
RqJA
250
(Note 1)
°C/W
Junction and Storage Temperature Range
TJ, Tstg
55 to +150
°C
1. FR−4 @ Minimum Pad
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
40
−40
−
−
60
−40
−
−
6.0
−5.0
−
−
−
−
50
−50
−
−
50
−50
40
70
100
60
30
−
−
300
−
−
60
80
100
60
30
−
−
300
−
−
−
−
0.2
0.3
−
−
−0.25
−0.4
0.65
−
0.85
0.95
−0.65
−
−0.85
−0.95
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0)
(IC = −1.0 mAdc, IB = 0)
(NPN)
(PNP)
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
(IC = −10 mAdc, IE = 0)
(NPN)
(PNP)
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
(IE = −10 mAdc, IC = 0)
(NPN)
(PNP)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = −30 Vdc, VEB = −3.0 Vdc)
(NPN)
(PNP)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = −30 Vdc, VEB = −3.0 Vdc)
(NPN)
(PNP)
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
Vdc
Vdc
Vdc
nAdc
nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(NPN)
(IC = −0.1 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
hFE
(PNP)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
(NPN)
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat)
(PNP)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
(NPN)
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
(PNP)
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2
VBE(sat)
−
Vdc
Vdc
NST3946DXV6T1G, NST3946DXV6T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Max
300
250
−
−
−
−
4.0
4.5
−
−
8.0
10.0
1.0
2.0
10
12
0.5
0.1
8.0
10
100
100
400
400
1.0
3.0
40
60
−
−
5.0
4.0
−
−
35
35
−
−
35
35
−
−
200
225
−
−
50
75
Unit
SMALL- SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)
(NPN)
(PNP)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz)
(NPN)
(PNP)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)
(NPN)
(PNP)
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
(NPN)
(PNP)
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
(NPN)
(PNP)
Small −Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
(NPN)
(PNP)
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
(NPN)
(PNP)
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k Ω, f = 1.0 kHz)
(VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 k Ω, f = 1.0 kHz)
(NPN)
(PNP)
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
MHz
pF
pF
kΩ
X 10− 4
−
mmhos
dB
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 3.0 Vdc, VBE = − 0.5 Vdc)
(VCC = −3.0 Vdc, VBE = 0.5 Vdc)
(NPN)
(PNP)
Rise Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
(IC = −10 mAdc, IB1 = −1.0 mAdc)
(NPN)
(PNP)
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc)
(VCC = −3.0 Vdc, IC = −10 mAdc)
(NPN)
(PNP)
Fall Time
(IB1 = IB2 = 1.0 mAdc)
(IB1 = IB2 = −1.0 mAdc)
(NPN)
(PNP)
2. Pulse Test: Pulse Width ≤ 300 μs; Duty Cycle ≤ 2.0%.
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3
td
tr
ts
tf
ns
ns
NST3946DXV6T1G, NST3946DXV6T5G
(NPN)
DUTY CYCLE = 2%
300 ns
+3 V
+10.9 V
10 < t1 < 500 ms
275
t1
DUTY CYCLE = 2%
+3 V
+10.9 V
275
10 k
10 k
0
-0.5 V
Cs < 4 pF*
< 1 ns
1N916
-9.1 V′
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
10
(NPN)
CAPACITANCE (pF)
7.0
5.0
Cibo
3.0
Cobo
2.0
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. Capacitance
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4
20 30 40
Cs < 4 pF*
NST3946DXV6T1G, NST3946DXV6T5G
(NPN)
500
500
IC/IB = 10
100
70
tr @ VCC = 3.0 V
50
30
20
VCC = 40 V
IC/IB = 10
300
200
t r, RISE TIME (ns)
TIME (ns)
300
200
40 V
100
70
50
30
20
15 V
10
7
5
10
(NPN)
2.0 V
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 4. Turn-On Time
Figure 5. Rise Time
IC/IB = 10
200
500
t′s = ts - 1/8 tf
IB1 = IB2
VCC = 40 V
IB1 = IB2
300
200
IC/IB = 20
t f , FALL TIME (ns)
t s′ , STORAGE TIME (ns)
IC/IB = 20
200
(NPN)
IC, COLLECTOR CURRENT (mA)
500
300
200
7
5
100
70
IC/IB = 20
50
IC/IB = 10
30
20
10
7
5
IC/IB = 10
30
20
10
(NPN)
1.0
100
70
50
2.0 3.0
5.0 7.0 10
20
30
50 70 100
7
5
200
(NPN)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 6. Storage Time
Figure 7. Fall Time
200
TYPICAL AUDIO SMALL- SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
14
12
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
f = 1.0 kHz
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
8
6
SOURCE RESISTANCE = 1.0 k
IC = 50 mA
4
2
0
0.1
SOURCE RESISTANCE = 500 W
IC = 100 mA
0.2
0.4
1.0
2.0
10
IC = 0.5 mA
10
IC = 50 mA
8
IC = 100 mA
6
4
2
(NPN)
4.0
IC = 1.0 mA
12
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
10
20
40
0
100
(NPN
)
0.1
0.2
0.4
1.0
2.0
4.0
10
20
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (k OHMS)
Figure 8. Noise Figure
Figure 9. Noise Figure
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5
40
100
NST3946DXV6T1G, NST3946DXV6T5G
(NPN)
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
hoe, OUTPUT ADMITTANCE (m mhos)
300
h fe , CURRENT GAIN
(NPN)
200
100
70
50
30
0.1
0.2
5.0
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
(NPN)
50
20
10
5
2
1
10
0.1
0.2
5.0
2.0
1.0
0.5
0.1
0.2
5.0
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
10
hre , VOLTAGE FEEDBACK RATIO (x 10 -4)
(NPN)
7.0
3.0
2.0
1.0
0.7
0.5
0.1
100 ms
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
1 ms
10 ms
100
1s
(NPN)
Single Pulse Test at TA = 25°C
1
10
5.0
1 ms
1
5.0
(NPN)
Figure 13. Voltage Feedback Ratio
1000
10
10
10
Figure 12. Input Impedance
IC, COLLECTOR CURRENT (mA)
h ie , INPUT IMPEDANCE (k OHMS)
20
0.2
5.0
Figure 11. Output Admittance
Figure 10. Current Gain
10
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 14. Safe Operating Area
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6
100
NST3946DXV6T1G, NST3946DXV6T5G
(NPN)
h FE, DC CURRENT GAIN (NORMALIZED)
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C
VCE = 1.0 V
(NPN)
+25°C
1.0
0.7
-55°C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
70
50
100
200
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 15. DC Current Gain
1.0
TJ = 25°C
(NPN)
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1.0
1.2
TJ = 25°C
(NPN)
(NPN)
VBE(sat) @ IC/IB =10
0.8
VBE @ VCE =1.0 V
0.6
0.4
VCE(sat) @ IC/IB =10
qVC FOR VCE(sat)
0
-55°C TO +25°C
-0.5
-55°C TO +25°C
-1.0
+25°C TO +125°C
qVB FOR VBE(sat)
-1.5
0.2
0
+25°C TO +125°C
0.5
COEFFICIENT (mV/ °C)
V, VOLTAGE (VOLTS)
1.0
1.0
2.0
5.0
10
20
50
100
-2.0
200
0
20
40
60
80
100
120
140
160
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 17. “ON” Voltages
Figure 18. Temperature Coefficients
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7
180 200
NST3946DXV6T1G, NST3946DXV6T5G
(PNP)
3V
3V
< 1 ns
+9.1 V
275
275
< 1 ns
10 k
+0.5 V
10 k
0
Cs < 4 pF*
10.6 V
300 ns
DUTY CYCLE = 2%
Cs < 4 pF*
1N916
10 < t1 < 500 ms
10.9 V
t1
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
Figure 19. Delay and Rise Time
Equivalent Test Circuit
Figure 20. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
10
(PNP)
CAPACITANCE (pF)
7.0
Cobo
5.0
Cibo
3.0
2.0
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE BIAS (VOLTS)
20 30 40
Figure 21. Capacitance
TJ = 25°C
TJ = 125°C
500
500
IC/IB = 10
(PNP)
300
200
(PNP)
300
200
VCC = 40 V
IB1 = IB2
100
70
50
tr @ VCC = 3.0 V
15 V
30
20
t f , FALL TIME (ns)
TIME (ns)
IC/IB = 20
100
70
50
30
20
IC/IB = 10
40 V
10
7
5
10
2.0 V
7
5
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 22. Turn-On Time
Figure 23. Fall Time
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8
200
NST3946DXV6T1G, NST3946DXV6T5G
(PNP)
TYPICAL AUDIO SMALL- SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = − 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
4.0
f = 1.0 kHz
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 mA
2.0
SOURCE RESISTANCE = 2.0 k
IC = 100 mA
1.0
0
0.1
0.2
0.4
IC = 1.0 mA
10
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
5.0
IC = 0.5 mA
8
6
4
IC = 50 mA
2
IC = 100 mA
(PNP)
(PNP)
1.0 2.0 4.0
10
f, FREQUENCY (kHz)
20
40
0
100
0.1
0.2
0.4
1.0 2.0
4.0
10
20
Rg, SOURCE RESISTANCE (k OHMS)
Figure 24.
40
100
Figure 25.
h PARAMETERS
(VCE = − 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
hoe, OUTPUT ADMITTANCE (m mhos)
300
h fe , DC CURRENT GAIN
(PNP)
200
100
70
50
(PNP)
70
50
30
20
10
7
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5
5.0 7.0 10
0.1
0.2
h ie , INPUT IMPEDANCE (k OHMS)
20
(PNP)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 27. Output Admittance
hre , VOLTAGE FEEDBACK RATIO (x 10 -4)
Figure 26. Current Gain
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
10
7.0
(PNP)
5.0
3.0
2.0
1.0
0.7
0.5
0.1
Figure 28. Input Impedance
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 29. Voltage Feedback Ratio
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9
NST3946DXV6T1G, NST3946DXV6T5G
(PNP)
h FE, DC CURRENT GAIN (NORMALIZED)
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C
VCE = 1.0 V
+25°C
1.0
0.7
-55°C
0.5
0.3
(PNP)
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
20
30
50
70
100
200
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 30. DC Current Gain
1.0
TJ = 25°C
(PNP)
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.2
0.3
0.5
IB, BASE CURRENT (mA)
0.1
0.7
1.0
2.0
3.0
5.0
7.0
10
Figure 31. Collector Saturation Region
TJ = 25°C
V, VOLTAGE (VOLTS)
0.8
q V , TEMPERATURE COEFFICIENTS (mV/ °C)
1.0
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
0.6
(PNP)
0.4
VCE(sat) @ IC/IB = 10
0.2
0
1.0
2.0
50
5.0
10
20
IC, COLLECTOR CURRENT (mA)
100
1.0
0.5
0
+25°C TO +125°C
-55°C TO +25°C
(PNP)
-0.5
+25°C TO +125°C
-1.0
-55°C TO +25°C
qVB FOR VBE(sat)
-1.5
-2.0
200
qVC FOR VCE(sat)
0
Figure 32. “ON” Voltages
20
40
60
80 100 120 140
IC, COLLECTOR CURRENT (mA)
160
Figure 33. Temperature Coefficients
http://onsemi.com
10
180 200
IC, COLLECTOR CURRENT (mA)
NST3946DXV6T1G, NST3946DXV6T5G
1000
100 ms
100
1s
(PNP)
10
1
1 ms
10 ms 1 ms
Single Pulse Test at TA = 25°C
1
10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 34. Safe Operating Area
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11
100
NST3946DXV6T1G, NST3946DXV6T5G
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE F
D
−X−
5
6
1
e
2
A
4
L
E
−Y−
3
b
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
DIM
A
b
C
D
E
e
L
HE
HE
C
5 PL
6
0.08 (0.003)
M
X Y
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NST3946DXV6T1/D