MMBT4401WT1 Preferred Device Switching Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model; 4 kV, http://onsemi.com Machine Model; 400 V COLLECTOR 3 • Pb−Free Package is Available 1 BASE MAXIMUM RATINGS Rating 2 EMITTER Symbol Value Unit Collector−Emitter Voltage VCEO 40 Vdc Collector−Base Voltage VCBO 60 Vdc Emitter−Base Voltage VEBO 6.0 Vdc IC 600 mAdc Symbol Max Unit PD 150 mW RJA 833 °C/W SC−70 (SOT−323) CASE 419 STYLE 3 TJ, Tstg −55 to +150 °C MARKING DIAGRAM Collector Current − Continuous 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board TA = 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 1 2 2X D 2X = Specific Device Code D = Date Code ORDERING INFORMATION Device MMBT4401WT1 MMBT4401WT1G Package Shipping† SC−70 3000/Tape & Reel SC−70 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 February, 2004 − Rev. 1 1 Publication Order Number: MMBT4401WT1/D MMBT4401WT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector−Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 60 − Vdc Emitter−Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc IBEV − 0.1 Adc 20 40 80 100 40 − − − 300 − − − 0.4 0.75 0.75 − 0.95 1.2 ICEX − 0.1 Adc OFF CHARACTERISTICS Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT 250 − MHz Collector−Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb − 6.5 pF Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb − 30 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 1.0 15 k Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10− 4 Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 40 500 − Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 30 mhos (VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td − 15 tr − 20 (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts − 225 tf − 30 SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time ns ns 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V +16 V 0 −2.0 V 1.0 to 100 s, DUTY CYCLE ≈ 2.0% 200 +16 V 1.0 to 100 s, DUTY CYCLE ≈ 2.0% 0 1.0 k < 2.0 ns −14 V CS* < 10 pF 1.0 k < 20 ns −4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn−On Time Figure 2. Turn−Off Time http://onsemi.com 2 200 CS* < 10 pF MMBT4401WT1 TRANSIENT CHARACTERISTICS 25°C 100°C 30 10 7.0 5.0 20 3.0 Q, CHARGE (nC) CAPACITANCE (pF) Cobo 10 7.0 5.0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 REVERSE VOLTAGE (VOLTS) 20 30 QT 2.0 1.0 0.7 0.5 0.3 0.2 Ccb 3.0 2.0 0.1 VCC = 30 V IC/IB = 10 0.1 50 QA 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 3. Capacitances 100 IC/IB = 10 70 70 50 tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0 20 t, TIME (ns) t, TIME (ns) VCC = 30 V IC/IB = 10 tr 50 30 20 10 7.0 7.0 10 20 30 50 70 100 200 300 5.0 500 tf 30 10 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn−On Time Figure 6. Rise and Fall Times 300 300 500 100 ts′ = ts − 1/8 tf IB1 = IB2 IC/IB = 10 to 20 VCC = 30 V IB1 = IB2 70 50 t f , FALL TIME (ns) 200 t s′, STORAGE TIME (ns) 500 Figure 4. Charge Data 100 5.0 300 100 70 IC/IB = 20 30 20 IC/IB = 10 10 50 7.0 30 10 20 30 50 70 100 200 300 5.0 500 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time http://onsemi.com 3 300 500 MMBT4401WT1 SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz 10 10 IC = 1.0 mA, RS = 150 IC = 500 A, RS = 200 IC = 100 A, RS = 2.0 k IC = 50 A, RS = 4.0 k 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8.0 f = 1.0 kHz RS = OPTIMUM RS = SOURCE RS = RESISTANCE 6.0 4.0 IC = 50 A IC = 100 A IC = 500 A IC = 1.0 mA 6.0 4.0 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 f, FREQUENCY (kHz) 10 20 50 0 100 50 100 200 500 1.0k 2.0k 5.0k 10k 20k RS, SOURCE RESISTANCE (OHMS) 50k 100k Figure 10. Source Resistance Effects Figure 9. Frequency Effects h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain these curves, a high−gain and a low−gain unit were selected from the MMBT4401WT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. 300 50k hie , INPUT IMPEDANCE (OHMS) hfe , CURRENT GAIN 200 100 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 70 50 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 20k 10k 5.0k 2.0k 1.0k 500 5.0 7.0 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 11. Current Gain Figure 12. Input Impedance 10 5.0 7.0 10 100 7.0 5.0 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 IC, COLLECTOR CURRENT (mA) hoe, OUTPUT ADMITTANCE ( mhos) h re , VOLTAGE FEEDBACK RATIO (X 10−4 ) 20 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 50 20 10 2.0 1.0 0.1 5.0 7.0 10 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance http://onsemi.com 4 5.0 7.0 10 MMBT4401WT1 STATIC CHARACTERISTICS h FE, NORMALIZED CURRENT GAIN 3.0 VCE = 1.0 V VCE = 10 V 2.0 TJ = 125°C 1.0 25°C 0.7 0.5 −55 °C 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 TJ = 25°C 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 100 200 500 Figure 16. Collector Saturation Region 1.0 +0.5 TJ = 25°C VBE(sat) @ IC/IB = 10 0.6 0 COEFFICIENT (mV/ °C) VOLTAGE (VOLTS) 0.8 VBE @ VCE = 10 V 0.4 0.2 0 VCE(sat) @ IC/IB = 10 0.1 0.2 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) VC for VCE(sat) −0.5 −1.0 −1.5 −2.0 100 200 −2.5 0.1 0.2 500 Figure 17. “On” Voltages VB for VBE 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 18. Temperature Coefficients http://onsemi.com 5 MMBT4401WT1 PACKAGE DIMENSIONS SC−70/SOT−323 CASE 419−04 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A L 3 DIM A B C D G H J K L N S B S 1 2 D G C 0.05 (0.002) J N MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 2.00 2.40 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR K H INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches SC−70/SOT−323 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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