MC34152, MC33152, NCV33152 High Speed Dual MOSFET Drivers The MC34152/MC33152 are dual noninverting high speed drivers specifically designed for applications that require low current digital signals to drive large capacitive loads with high slew rates. These devices feature low input current making them CMOS/LSTTL logic compatible, input hysteresis for fast output switching that is independent of input transition time, and two high current totem pole outputs ideally suited for driving power MOSFETs. Also included is an undervoltage lockout with hysteresis to prevent system erratic operation at low supply voltages. Typical applications include switching power supplies, dc−to−dc converters, capacitor charge pump voltage doublers/inverters, and motor controllers. This device is available in dual−in−line and surface mount packages. http://onsemi.com MARKING DIAGRAMS 8 PDIP−8 P SUFFIX CASE 626 8 1 1 8 Features • • • • • • • • • MC3x152P AWL YYWW Pb−Free Packages are Available Two Independent Channels with 1.5 A Totem Pole Outputs Output Rise and Fall Times of 15 ns with 1000 pF Load CMOS/LSTTL Compatible Inputs with Hysteresis Undervoltage Lockout with Hysteresis Low Standby Current Efficient High Frequency Operation Enhanced System Performance with Common Switching Regulator Control ICs NCV Prefix for Automotive and Other Applications Requiring Site and Control Changes VCC 6 8 1 SOIC−8 D SUFFIX CASE 751 1 x A WL, L YY, Y WW, W = 3 or 4 = Assembly Location = Wafer Lot = Year = Work Week PIN CONNECTIONS N.C. 1 + − 5.7V 8 N.C. Logic Input A 2 7 Drive Output A GND 3 Drive Output A Logic Input A 2 7 3x152 ALYW 6 VCC Logic Input B 4 5 Drive Output B (Top View) 100k ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Drive Output B Logic Input B 4 5 100k GND 3 Figure 1. Representative Diagram Semiconductor Components Industries, LLC, 2004 October, 2004 − Rev. 7 1 Publication Order Number: MC34152/D MC34152, MC33152, NCV33152 MAXIMUM RATINGS Symbol Value Unit Power Supply Voltage Rating VCC 20 V Logic Inputs (Note 1) Vin −0.3 to +VCC V Drive Outputs (Note 2) Totem Pole Sink or Source Current Diode Clamp Current (Drive Output to VCC) IO IO(clamp) 1.5 1.0 PD RJA 0.56 180 W °C/W PD RJA 1.0 100 W °C/W TJ +150 °C TA 0 to +70 −40 to +85 −40 to +125 °C Storage Temperature Range Tstg −65 to +150 °C Electrostatic Discharge Sensitivity (ESD) Human Body Model (HBM) Machine Model (MM) ESD A Power Dissipation and Thermal Characteristics D Suffix, Plastic Package Case 751 Maximum Power Dissipation @ TA = 50°C Thermal Resistance, Junction−to−Air P Suffix, Plastic Package, Case 626 Maximum Power Dissipation @ TA = 50°C Thermal Resistance, Junction−to−Air Operating Junction Temperature Operating Ambient Temperature Operating Ambient Temperature Operating Ambient Temperature MC34152 MC33152 MC33152V, NCV33152 V 2000 200 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. For optimum switching speed, the maximum input voltage should be limited to 10 V or VCC, whichever is less. 2. Maximum package power dissipation limits must be observed. ORDERING INFORMATION Package Shipping† SOIC−8 98 Units / Rail MC34152DG SOIC−8 (Pb−Free) 98 Units / Rail MC34152DR2 SOIC−8 2500 Tape & Reel SOIC−8 (Pb−Free) 2500 Tape & Reel MC34152P PDIP−8 50 Units / Rail MC33152D SOIC−8 98 Units / Rail MC33152DR2 SOIC−8 2500 Tape & Reel MC33152P PDIP−8 50 Units / Rail PDIP−8 (Pb−Free) 50 Units / Rail MC33152VDR2 SOIC−8 2500 Tape & Reel NCV33152DR2* SOIC−8 2500 Tape & Reel SOIC−8 (Pb−Free) 2500 Tape & Reel Device MC34152D MC34152DR2G MC33152PG NCV33152DR2G* †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NCV prefix is for automotive and other applications requiring site and change control. http://onsemi.com 2 MC34152, MC33152, NCV33152 ELECTRICAL CHARACTERISTICS (VCC = 12 V, for typical values TA = 25°C, for min/max values TA is the operating ambient temperature range that applies [Note 3], unless otherwise noted.) Characteristics Symbol Min Typ Max VIH VIL − 0.8 1.75 1.58 2.6 − IIH IIL − − 100 20 300 100 VOL − − − 10.5 10.4 10 0.8 1.1 1.8 11.2 11.1 10.8 1.2 1.5 2.5 − − − RPD − 100 − tPLH (IN/OUT) tPHL (IN/OUT) − − 55 40 120 120 Unit LOGIC INPUTS Input Threshold Voltage V Output Transition High−to−Low State Output Transition Low−to−High State A Input Current High State (VIH = 2.6 V) Low State (VIL = 0.8 V) DRIVE OUTPUT Output Voltage Low State (Isink = 10 mA) Low State (Isink = 50 mA) Low State (Isink = 400 mA) High State (Isource = 10 mA) High State (Isource = 50 mA) High State (Isource = 400 mA) V VOH Output Pull−Down Resistor k SWITCHING CHARACTERISTICS (TA = 25°C) Propagation Delay (CL = 1.0 nF) Logic Input to: Drive Output Rise (10% Input to 10% Output) Drive Output Fall (90% Input to 90% Output) ns Drive Output Rise Time (10% to 90%) Drive Output Rise Time (10% to 90%) CL = 1.0 nF CL = 2.5 nF tr − − 14 36 30 − ns Drive Output Fall Time (90% to 10%) Drive Output Fall Time (90% to 10%) CL = 1.0 nF CL = 2.5 nF tf − − 15 32 30 − ns − − 6.0 10.5 8.0 15 6.5 − 18 TOTAL DEVICE Power Supply Current Standby (Logic Inputs Grounded) Operating (CL = 1.0 nF Drive Outputs 1 and 2, f = 100 kHz) ICC Operating Voltage VCC mA 3. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible. Tlow = 0°C for MC34152, −40°C for MC33152, −40°C for MC33152V Thigh = +70°C for MC34152, +85°C for MC33152, +125°C for MC33152V NCV33152: Tlow = −40°C, Thigh = +125°C. Guaranteed by design. http://onsemi.com 3 V MC34152, MC33152, NCV33152 12V 4.7 0.1 + 6 + + − 5.7V Logic Input Drive Output 7 100k 2 50 5V CL 90% Logic Input tr, tf ≤ 10 ns 10% 0V 5 tPHL tPLH 100k 4 10% Drive Output 90% 3 tr Figure 3. Switching Waveform Definitions Figure 2. Switching Characteristics Test CIrcuit 2.2 2.4 Iin , INPUT CURRENT (mA) Vth , INPUT THRESHOLD VOLTAGE (V) VCC=12V TA=25°C 2.0 1.6 1.2 0.8 0.4 0 0 2.0 4.0 6.0 8.0 Vin, INPUT VOLTAGE (V) 10 VCC=12V 2.0 1.8 Upper Threshold Low State Output 1.6 Lower Threshold High State Output 1.4 1.2 1.0 −55 12 200 160 VCC=12V CL=1.0nF TA=25°C Overdrive Voltage is with Respect to the Logic Input Lower Threshold 120 80 40 0 −25 0 25 50 75 TA, AMBIENT TEMPERATURE (°C) 100 125 Figure 5. Logic Input Threshold Voltage versus Temperature tPHL(In/Out) , DRIVE OUTPUT PROPAGATION DELAY (ns) Figure 4. Logic Input Current versus Input Voltage tPLH(In/Out) , DRIVE OUTPUT PROPAGATION DELAY (ns) tf Vth(lower) −1.6 −1.2 −0.8 −0.4 0 Vin, INPUT OVERDRIVE VOLTAGE BELOW LOWER THRESHOLD (V) Figure 6. Drive Output High to Low Propagation Delay versus Logic Input Overdrive Voltage 200 Overdrive Voltage is with Respect VCC=12V to the Logic InputUpperThreshold CL=1.0nF TA=25°C 160 120 80 40 0 Vth(upper) 0 1 2 3 4 Vin, INPUT OVERDRIVE VOLTAGE ABOVE UPPER THRESHOLD (V) Figure 7. Drive Output Low to High Propagation Delay versus Logic Input Overdrive Voltage http://onsemi.com 4 MC34152, MC33152, NCV33152 90% − V clamp, OUTPUT CLAMP VOLTAGE (V) VCC = 12 V Vin = 0 V to 5.0 V CL = 1.0 nF TA = 25°C Drive Output 10% − 1.0 VCC 0 0 Low State Clamp (Drive Output Driven Below Ground) GND 0 0.2 0.4 0.6 0.8 1.0 1.2 IO, OUTPUT CLAMP CURRENT (A) Figure 8. Propagation Delay Figure 9. Drive Output Clamp Voltage versus Clamp Current VCC −1.0 −2.0 Source Saturation VCC = 12 V (Load to Ground) 80 s Pulsed Load 120 Hz Rate TA = 25°C −3.0 3.0 2.0 1.0 Sink Saturation (Load to VCC) 0 0.2 VCC = 12 V 80 s Pulsed Load 120 Hz Rate TA = 25°C 2.0 50 ns/DIV 0 0 High State Clamp (Drive Output Driven Above VCC) −1.0 V sat, OUTPUT SATURATION VOLTAGE (V) V sat, OUTPUT SATURATION VOLTAGE (V) Logic Input 3.0 0.4 0.6 0.8 GND 1.0 1.2 0 Source Saturation (Load to Ground) VCC = 12 V −0.5 −0.7 −0.9 −1.1 Isource = 10 mA VCC Isource = 400 mA 1.9 1.7 1.5 1.0 0.8 0.6 0 1.4 Isink = 400 mA Isink = 10 mA Sink Saturation (Load to VCC) −55 −25 GND 0 25 50 75 100 IO, OUTPUT CLAMP CURRENT (A) TA, AMBIENT TEMPERATURE (°C) Figure 10. Drive Output Saturation Voltage versus Load Current Figure 11. Drive Output Saturation Voltage versus Temperature VCC = 12 V Vin = 0 V to 5.0 V CL = 1.0 nF TA = 25°C 90% − 90% − VCC = 12 V Vin = 0 V to 5.0 V CL = 1.0 nF TA = 25°C 10% − 10% − 10 ns/DIV 10 ns/DIV Figure 12. Drive Output Rise Time Figure 13. Drive Output Fall Time http://onsemi.com 5 1.4 125 80 80 VCC = 12 V VIN = 0 V to 5.0 V TA = 25°C 60 ICC , SUPPLY CURRENT (mA) t r −t f , OUTPUT RISE-FALL TIME(ns) MC34152, MC33152, NCV33152 40 tf 20 tr 0 0.1 1.0 40 f = 500 kHz 20 f = 50 kHz 1.0 CL, OUTPUT LOAD CAPACITANCE (nF) Figure 14. Drive Output Rise and Fall Time versus Load Capacitance Figure 15. Supply Current versus Drive Output Load Capacitance 10 8.0 TA = 25°C Both Logic Inputs Driven 0 V to 5.0 V, 50% Duty Cycle Both Drive Outputs Loaded TA = 25°C 1 − VCC = 18 V, CL = 2.5 nF 2 − VCC = 12 V, CL = 2.5 nF 3 − VCC = 18 V, CL = 1.0 nF 4 − VCC = 12 V, CL = 1.0 nF 1 2 3 4 20 0 f = 200 kHz CL, OUTPUT LOAD CAPACITANCE (nF) ICC , SUPPLY CURRENT (mA) ICC , SUPPLY CURRENT (mA) 40 60 0 0.1 10 80 60 VCC = 12 V Both Logic Inputs Driven 0 V to 5.0 V 50% Duty Cycle Both Drive Outputs Loaded TA = 25°C 10 k 100 4.0 Logic Inputs Grounded High State Drive Outputs 2.0 0 1.0 M Logic Inputs at VCC Low State Drive Outputs 6.0 0 f, INPUT FREQUENCY (Hz) Figure 16. Supply Current versus Input Frequency 4.0 8.0 12 VCC, SUPPLY VOLTAGE (V) 16 Figure 17. Supply Current versus Supply Voltage APPLICATIONS INFORMATION Description Output Stage The MC34152 is a dual noninverting high speed driver specifically designed to interface low current digital circuitry with power MOSFETs. This device is constructed with Schottky clamped Bipolar Analog technology which offers a high degree of performance and ruggedness in hostile industrial environments. Each totem pole Drive Output is capable of sourcing and sinking up to 1.5 A with a typical ‘on’ resistance of 2.4 at 1.0 A. The low ‘on’ resistance allows high output currents to be attained at a lower VCC than with comparative CMOS drivers. Each output has a 100 k pulldown resistor to keep the MOSFET gate low when VCC is less than 1.4 V. No over current or thermal protection has been designed into the device, so output shorting to VCC or ground must be avoided. Parasitic inductance in series with the load will cause the driver outputs to ring above VCC during the turn−on transition, and below ground during the turn−off transition. With CMOS drivers, this mode of operation can cause a destructive output latchup condition. The MC34152 is immune to output latchup. The Drive Outputs contain an internal diode to VCC for clamping positive voltage transients. When operating with VCC at 18 V, proper power supply bypassing must be observed to prevent the output ringing from exceeding the maximum 20 V device rating. Negative output transients are clamped by the internal NPN pullup transistor. Since full supply voltage is applied across Input Stage The Logic Inputs have 170 mV of hysteresis with the input threshold centered at 1.67 V. The input thresholds are insensitive to VCC making this device directly compatible with CMOS and LSTTL logic families over its entire operating voltage range. Input hysteresis provides fast output switching that is independent of the input signal transition time, preventing output oscillations as the input thresholds are crossed. The inputs are designed to accept a signal amplitude ranging from ground to VCC. This allows the output of one channel to directly drive the input of a second channel for master−slave operation. Each input has a 30 k pulldown resistor so that an unconnected open input will cause the associated Drive Output to be in a known low state. http://onsemi.com 6 MC34152, MC33152, NCV33152 the NPN pullup during the negative output transient, power dissipation at high frequencies can become excessive. Figures 20, 21, and 22 show a method of using external Schottky diode clamps to reduce driver power dissipation. aid in this calculation, power MOSFET manufacturers provide gate charge information on their data sheets. Figure 18 shows a curve of gate voltage versus gate charge for the ON Semiconductor MTM15N50. Note that there are three distinct slopes to the curve representing different input capacitance values. To completely switch the MOSFET ‘on,’ the gate must be brought to 10 V with respect to the source. The graph shows that a gate charge Qg of 110 nC is required when operating the MOSFET with a drain to source voltage VDS of 400 V. Undervoltage Lockout An undervoltage lockout with hysteresis prevents erratic system operation at low supply voltages. The UVLO forces the Drive Outputs into a low state as VCC rises from 1.4 V to the 5.8 V upper threshold. The lower UVLO threshold is 5.3 V, yielding about 500 mV of hysteresis. 16 VGS , GATE−TO−SOURCE VOLTAGE (V) Power Dissipation Circuit performance and long term reliability are enhanced with reduced die temperature. Die temperature increase is directly related to the power that the integrated circuit must dissipate and the total thermal resistance from the junction to ambient. The formula for calculating the junction temperature with the package in free air is: 12 8.9nF 0 160 PC(MOSFET) = VCC Qg f The flat region from 10 nC to 55 nC is caused by the drain−to−gate Miller capacitance, occurring while the MOSFET is in the linear region dissipating substantial amounts of power. The high output current capability of the MC34152 is able to quickly deliver the required gate charge for fast power efficient MOSFET switching. By operating the MC34152 at a higher VCC, additional charge can be provided to bring the gate above 10 V. This will reduce the ‘on’ resistance of the MOSFET at the expense of higher driver dissipation at a given operating frequency. The transition power dissipation is due to extremely short simultaneous conduction of internal circuit nodes when the Drive Outputs change state. The transition power dissipation per driver is approximately: PQ = VCC (ICCL [1−D] + ICCH [D]) ICCL = Supply Current with Low State Drive Outputs ICCH = Supply Current with High State Drive Outputs D = Output Duty Cycle The capacitive load power dissipation is directly related to the load capacitance value, frequency, and Drive Output voltage swing. The capacitive load power dissipation per driver is: PT ≈ VCC (1.08 VCC CL f − 8 x 10−4) PT must be greater than zero. PC = VCC (VOH − VOL) CL f = = = = 80 120 Qg, GATE CHARGE (nC) The capacitive load power dissipation is directly related to the required gate charge, and operating frequency. The capacitive load power dissipation per driver is: PQ = Quiescent Power Dissipation PC = Capacitive Load Power Dissipation PT = Transition Power Dissipation VOH VOL CL f 40 Figure 18. Gate−to−Source Voltage versus Gate charge The quiescent power supply current depends on the supply voltage and duty cycle as shown in Figure 17. The device’s quiescent power dissipation is: where: Qg CGS = V GS 2.0nF 0 PD = PQ + PC + PT where: VDS=400V 4.0 TJ = Junction Temperature TA = Ambient Temperature PD = Power Dissipation RJA = Thermal Resistance Junction to Ambient There are three basic components that make up total power to be dissipated when driving a capacitive load with respect to ground. They are: where: VDS=100V 8.0 TJ = TA + PD (RJA) where: MTM15B50 ID = 15 A TA = 25°C Switching time characterization of the MC34152 is performed with fixed capacitive loads. Figure 14 shows that for small capacitance loads, the switching speed is limited by transistor turn−on/off time and the slew rate of the internal nodes. For large capacitance loads, the switching speed is limited by the maximum output current capability of the integrated circuit. High State Drive Output Voltage Low State Drive Output Voltage Load Capacitance Frequency When driving a MOSFET, the calculation of capacitive load power PC is somewhat complicated by the changing gate to source capacitance CGS as the device switches. To http://onsemi.com 7 MC34152, MC33152, NCV33152 LAYOUT CONSIDERATIONS High frequency printed circuit layout techniques are imperative to prevent excessive output ringing and overshoot. Do not attempt to construct the driver circuit on wire−wrap or plug−in prototype boards. When driving large capacitive loads, the printed circuit board must contain a low inductance ground plane to minimize the voltage spikes induced by the high ground ripple currents. All high current loops should be kept as short as possible using heavy copper runs to provide a low impedance high frequency path. For optimum drive performance, it is recommended that the initial circuit design contains dual power supply bypass capacitors connected with short leads as close to the VCC pin and ground as the layout will permit. Suggested capacitors are a low inductance 0.1 F ceramic in parallel with a 4.7 F tantalum. Additional bypass capacitors may be required depending upon Drive Output loading and circuit layout. Proper printed circuit board layout is extremely critical and cannot be over emphasized. VCC 47 0.1 Vin 6 Vin + − 5.7V 7 Rg TL494 or TL594 100k 100k 2 D1 1N5819 5 100k 4 Series gate resistor Rg may be needed to damp high frequency parasitic oscillations caused by the MOSFET input capacitance and any series wiring inductance in the gate−source circuit. Rg will decrease the MOSFET switching speed. Schottky diode D1 can reduce the driver’s power dissipation due to excessive ringing, by preventing the output pin from being driven below ground. 3 The MC34152 greatly enhances the drive capabilities of common switching regulators and CMOS/TTL logic devices. Figure 19. Enhanced System Performance with Common Switching Regulators Figure 20. MOSFET Parasitic Oscillations 100k 7 4X 1N5819 5 100k 100k Isolation Boundary 3 Output Schottky diodes are recommended when driving inductive loads at high frequencies. The diodes reduce the driver’s power dissipation by preventing the output pins from being driven above VCC and below ground. Figure 21. Direct Transformer Drive 1N 5819 3 Figure 22. Isolated MOSFET Drive http://onsemi.com 8 MC34152, MC33152, NCV33152 IB Vin + 0 Vin − Base Charge Removal C1 100k 100k Rg(on) Rg(off) In noise sensitive applications, both conducted and radiated EMI can be reduced significantly by controlling the MOSFET’s turn−on and turn−off times. The totem−pole outputs can furnish negative base current for enhanced transistor turn−off, with the addition of capacitor C1. Figure 23. Controlled MOSFET Drive Figure 24. Bipolar Transistor Drive VCC = 15V 47 + + 0.1 6 + − 5.7V 7 6.8 10 + 1N5819 + VO ≈ 2 .0VCC + 100k 2 47 VCC 100k 5 4 6.8 10 + 1N5819 100k 10k 2N3904 330 pF 47 − VO ≈ −VCC + 3 Output Load Regulation The capacitor’s equivalent series resistance limits the Drive Output Current to 1.5 A. An additional series resistor may be required when using tantalum or other low ESR capacitors. Figure 25. Dual Charge Pump Converter http://onsemi.com 9 IO (mA) +VO (V) −VO (V) 0 1.0 10 20 30 50 27.7 27.4 26.4 25.5 24.6 22.6 −13.3 −12.9 −11.9 −11.2 −10.5 −9.4 MC34152, MC33152, NCV33152 PACKAGE DIMENSIONS PDIP−8 CASE 626−05 ISSUE L 8 NOTES: 1. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 2. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS). 3. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 5 −B− 1 4 F −A− NOTE 2 L C J −T− N SEATING PLANE D H M K G 0.13 (0.005) M T A M B M http://onsemi.com 10 DIM A B C D F G H J K L M N MILLIMETERS MIN MAX 9.40 10.16 6.10 6.60 3.94 4.45 0.38 0.51 1.02 1.78 2.54 BSC 0.76 1.27 0.20 0.30 2.92 3.43 7.62 BSC −−− 10 0.76 1.01 INCHES MIN MAX 0.370 0.400 0.240 0.260 0.155 0.175 0.015 0.020 0.040 0.070 0.100 BSC 0.030 0.050 0.008 0.012 0.115 0.135 0.300 BSC −−− 10 0.030 0.040 MC34152, MC33152, NCV33152 PACKAGE DIMENSIONS SOIC−8 D SUFFIX CASE 751−07 ISSUE AC NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. −X− A 8 5 S B 1 0.25 (0.010) M Y M 4 K −Y− G C N X 45 DIM A B C D G H J K M N S SEATING PLANE −Z− 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 11 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0 8 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 8 0.010 0.020 0.228 0.244 MC34152, MC33152, NCV33152 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 12 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MC34152/D