ZXT690BK 45V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN D-PAK SUMMARY BVCEO = 45V : RSAT = 77m ; IC = 3A DESCRIPTION Packaged in the D-Pak outline this high gain 45V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES DPAK • 3 Amps continuous current • Up to 6 Amps peak current • Low saturation voltages • High gain APPLICATIONS • DC - DC Converters • MOSFET gate drivers • Charging circuits • Power switches • Siren drivers PINOUT ORDERING INFORMATION DEVICE ZXT690BKTC REEL SIZE TAPE WIDTH QUANTITY PER REEL 13" 16mm embossed 2500 units DEVICE MARKING • ZXT690B ISSUE 1 - JUNE 2003 1 SEMICONDUCTORS ZXT690BK ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT V Collector-Base Voltage BV CBO 60 Collector-Emitter Voltage BV CEO 45 V Emitter-Base Voltage BV EBO 5 V Continuous Collector Current IC 3 A Peak Pulse Current I CM Base Current IB Power Dissipation at T A =25°C (a) PD Linear Derating Factor Thermal Resistance Junction to Ambient Power Dissipation at T A =25°C (b) Linear Derating Factor PD Thermal Resistance Junction to Ambient Power Dissipation at T A =25°C (c) PD Linear Derating Factor Thermal Resistance Junction to Ambient Operating and Storage Temperature Range T j , T stg 6 A 0.5 A 2.1 W 16.8 mW/°C 59 °C/W 3.0 W 24.4 mW/°C 41 °C/W 3.9 W 30.9 mW/°C 32 °C/W -55 to +150 °C NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions. (c) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 2oz copper in still air conditions. ISSUE 1 - JUNE 2003 SEMICONDUCTORS 2 ZXT690BK TYPICAL CHARACTERISTICS ISSUE 1 - JUNE 2003 3 SEMICONDUCTORS ZXT690BK ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage BV CBO 60 145 MAX. UNIT CONDITIONS V I C = 100A Collector-Emitter Breakdown Voltage BV CEO 45 65 V I C = 10mA (1) Emitter-Base Breakdown Voltage BV EBO 5 V I E = 100A Collector Cut-Off Current I CBO <1 20 nA V CB = 35V Collector Cut-Off Current I CES <1 20 nA V CB = 35V Emitter Cut-Off Current I EBO <1 20 nA V EB = 4V Collector-Emitter Saturation Voltage V CE(SAT) 50 85 mV IC = 0.1A, IB = 0.5mA (1) 240 360 mV I C = 1A, I B = 5mA (1) 210 320 mV I C = 2A, I B = 40mA (1) 8.2 230 350 mV I C = 3A, I B = 150mA Base-Emitter Saturation Voltage V BE(SAT) 1.0 1.2 mV Base-Emitter Turn-On Voltage V BE(ON) 0.9 1.1 mV I C = 3A, I B = 150mA (1) I C = 3A, V CE = 2V (1) Static Forward Current Transfer Ratio h FE Transition Frequency fT Output Capacitance C OBO Switching Times 500 IC = 100mA, VCE = 2V (1) 400 I C = 1A, V CE = 2V (1) 150 I C = 2A, V CE = 2V (1) 60 I C = 3A, V CE = 2V (1) 150 MHz I C = 50mA, V CE = 5V f = 50MHz 16 pF VCB = 10V, f = 1MHz (1) t ON 33 ns I C = 500mA, V CC = 10V, t OFF 1300 ns I B1 = I B2 = 50mA NOTES (1) Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ 2%. ISSUE 1 - JUNE 2003 SEMICONDUCTORS 4 ZXT690BK TYPICAL CHARACTERISTICS ISSUE 1 - JUNE 2003 5 SEMICONDUCTORS ZXT690BK PACKAGE OUTLINE DIM MILLIMETRES MIN C o n tr o l l i ng di m ens i ons ar e i n m i l l i m e t r e s. Approximate conversions are given in inches INCHES MAX MIN MAX A 2.18 2.38 0.086 0.094 A1 ᎏ 0.127 ᎏ 0.005 b 0.635 0.89 0.025 0.035 b2 0.762 1.114 0.030 0.045 b3 5.20 5.46 0.205 0.215 c 0.457 0.609 0.018 0.024 c2 0.457 0.584 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 5.20 ᎏ 0.205 ᎏ E 6.35 6.73 0.250 0.265 E1 4.32 ᎏ 0.170 ᎏ e 2.30 BSC 0.090 BSC H 9.40 10.41 0.370 0.410 L 1.40 1.78 0.055 0.070 L1 2.74 REF 0.108 REF L2 0.051 BSC 0.020 BSC L3 0.89 1.27 0.035 0.050 L4 0.635 1.01 0.025 0.040 L5 1.14 1.52 0.045 0.060 ⍜1⬚ 0ⴗ 10ⴗ 0ⴗ 10ⴗ ⍜⬚ 0ⴗ 15ⴗ 0ⴗ 15ⴗ © Zetex plc 2003 Americas Asia Pacific Zetex GmbH Streitfeldstraße 19 D-81673 München Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - JUNE 2003 SEMICONDUCTORS 6