ZVP4525Z 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-250V; RDS(ON)=14 ; ID=-205mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage switching circuits. SOT89 SOT223 and SOT23-6 versions are also available. FEATURES • High voltage • Low on-resistance • Fast switching speed • Low gate drive • Low threshold • Complementary N-channel Type ZVN4525Z • SOT89 package APPLICATIONS S D D • Earth Recall and dialling switches G • Electronic hook switches Top View • High Voltage Power MOSFET Drivers • Telecom call routers • Solid state relays ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL ZVP4525ZTA 7 12mm embossed 1000 units ZVP4525ZTC 13 12mm embossed 4000 units DEVICE MARKING • P52 ISSUE 2 - JUNE 2007 1 SEMICONDUCTORS ZVP4525Z ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT Drain-Source Voltage V DSS 250 V ±40 V Gate Source Voltage UNIT Continuous Drain Current (V GS =10V; TA=25°C)(a) (V GS =10V; TA=70°C)(a) V GS ID ID -205 -164 mA mA Pulsed Drain Current (c) I DM -1 A Continuous Source Current (Body Diode) IS -0.75 A Pulsed Source Current (Body Diode) I SM -1 A Power Dissipation at T A =25°C (a) Linear Derating Factor PD 1.2 9.6 W mW/°C Operating and Storage Temperature Range T j : T stg -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θJA 103 °C/W Junction to Ambient (b) R θJA 50 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. NB High Voltage Applications For high voltage applications, the appropriate industry sector guidelines should be considered with regard to voltage spacing between conductors. ISSUE 2 - JUNE 2007 SEMICONDUCTORS 2 ZVP4525Z CHARACTERISTICS Max Power Dissipation (W) IC Collector Current (A) 1 RDS(on) Limit 100m DC 1s 100ms 10m 10ms Single Pulse Tamb=25°C 1ms 100µs 1m 1 10 100 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 VCE Collector-Emitter Voltage (V) 40 60 80 100 120 140 160 Temperature (°C) Safe Operating Area Derating Curve 100 Tamb=25°C 100 Maximum Power (W) Thermal Resistance (°C/W) 120 80 60 D=0.5 40 Single Pulse D=0.2 D=0.05 20 D=0.1 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Single Pulse Tamb=25°C 10 1 0.1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation Transient Thermal Impedance ISSUE 2 - JUNE 2007 3 SEMICONDUCTORS ZVP4525Z ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Drain-Source Breakdown Voltage V(BR)DSS -250 -285 Zero Gate Voltage Drain Current I DSS -30 Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (3) g fs MAX. UNIT CONDITIONS. STATIC -0.8 80 V I D =-1mA, V GS =0V -500 nA V DS =-250V, V GS =0V ±1 ±100 nA V GS =±40V, V DS =0V -1.5 -2.0 V I =-1mA, V DS = V GS D 10 13 14 18 Ω Ω V GS =-10V, I D =-200mA V GS =-3.5V, I D =-100mA mS V DS =-10V,I D =-0.15A 200 DYNAMIC (3) Input Capacitance C iss 73 pF Output Capacitance C oss 12.8 pF Reverse Transfer Capacitance C rss 3.91 pF Turn-On Delay Time t d(on) 1.53 ns Rise Time tr 3.78 ns Turn-Off Delay Time t d(off) 17.5 ns Fall Time tf 7.85 ns Total Gate Charge Qg 2.45 3.45 nC Gate-Source Charge Q gs 0.22 0.31 nC Gate Drain Charge Q gd 0.45 0.63 nC 0.97 V T j =25°C, I S =-200mA, V GS =0V T j =25°C, I F =-200mA, di/dt=100A/μs V DS =-25 V, V GS =0V, f=1MHz SWITCHING(2) (3) V DD =-30V, I D =-200m A R G =50Ω, V GS =-10V (refer to test circuit) V DS =-25V,V GS =-10V, I D =-200mA(refer to test circuit) SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD Reverse Recovery Time (3) t rr 205 290 ns Reverse Recovery Charge (3) Q rr 21 29 nC (1) Measured under pulsed conditions. Width=300μs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 2 - JUNE 2007 SEMICONDUCTORS ZVP4525Z TYPICAL CHARACTERISTICS 0.6 T = 25°C 0.8 5V 0.6 VGS 0.4 4V 3.5V 0.2 3V 2.5V 2V 0.0 0 5 10 5V 0.4 VGS 4V 3.5V 0.2 3V 2.5V 2V 0.0 15 0 -VDS Drain-Source Voltage (V) 5 T = 150°C 0.1 VDS = 10V 4 5 -VGS Gate-Source Voltage (V) Normalised RDS(on) and VGS(th) -ID Drain Current (A) T = 25°C 100 2.5V 3V VGS 3.5V 4V 5V 10V 10 T = 25°C 0.01 0.1 1 -ID Drain Current (A) On-Resistance v Drain Current 2.5 VGS = 10V ID = 200mA 2.0 1.5 RDS(on) 1.0 VGS(th) VGS = VDS ID = 1mA 0.5 0.0 -50 0 50 100 150 Tj Junction Temperature (°C) Normalised Curves v Temperature -ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance ( W) Typical Transfer Characteristics 2V 15 Output Characteristics 1 3 10 -VDS Drain-Source Voltage (V) Output Characteristics 2 10V T = 150°C 10V -ID Drain Current (A) -ID Drain Current (A) 1.0 1 T = 150°C 0.1 T = 25°C 0.01 0.4 0.6 0.8 1.0 1.2 -VDS Source-Drain Voltage (V) Source-Drain Diode Forward Voltage ISSUE 2 - JUNE 2007 SEMICONDUCTORS ZVP4525Z 175 C Capacitance (pF) VGS = 0V f = 1MHz CISS 150 COSS 125 CRSS 100 75 50 25 0 0.1 1 10 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage VGS Gate-Source Voltage (V) CHARACTERISTICS 10 ID = 200mA 8 VDS = 25V 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 Q - Charge (nC) Gate-Source Voltage v Gate Charge ISSUE 2 - JUNE 2007 SEMICONDUCTORS TEST CIRCUITS ZVP4525Z ISSUE 2 - JUNE 2007 SEMICONDUCTORS ZVP4525Z Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user's application and meets with the user's requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. 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To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. Green compliance Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. Product status key: "Preview"Future device intended for production at some point. Samples may be available "Active"Product status recommended for new designs "Last time buy (LTB)"Device will be discontinued and last time buy period and delivery is in effect "Not recommended for new designs"Device is still in production to support existing designs and production "Obsolete"Production has been discontinued Datasheet status key: "Draft version"This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. "Provisional version"This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. "Issue"This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. ISSUE 2 - JUNE 2007 SEMICONDUCTORS 52 ZVP4525Z PAD LAYOUT DETAILS PACKAGE DIMENSIONS DIM Millimetres Inches 2.4 Min Max Min Max A 4.40 4.60 0.173 0.181 B 3.75 4.25 0.150 0.167 C 1.40 1.60 0.550 0.630 D - 2.60 - 0.102 F 0.28 0.45 0.011 0.018 G 0.38 0.55 0.015 0.022 H 1.50 1.80 0.060 0.072 K 2.60 2.85 0.102 0.112 L 2.90 3.10 0.114 0.122 N 1.40 1.60 0.055 0.063 4.0 1.5 1.2 1.0 3.2 1.2 SOT89 pattern. Minimum Pad Size (dimensions in mm) A H C K D B G F N L © Zetex Semiconductors plc 2007 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] ISSUE 2 - JUNE 2007 53 SEMICONDUCTORS