ZXMN6A25N8 60V SO8 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) (Ω) ID(A) 60 0.050 @ VGS=10V 7.0 0.070 @ VGS=4.5V Description This new generation Trench MOSFET from Zetex features low on-resistance and fast switching, making it ideal for high efficiency power management applications. D Features • • • • Low on-resistance Fast switching speed Low gate drive SO8 package G S Applications • DC-DC Converters • Power management functions S D • Disconnect switches S D • Motor control S D G D Ordering information Device Reel size (inches) Tape width (mm) Quantity per reel 7 12 500 ZXMN6A25N8TA Top view Device marking ZXMN6A25 Issue 1 - April 2008 © Zetex Semiconductors plc 2008 1 www.zetex.com ZXMN6A25N8 Absolute maximum ratings Parameter Symbol Limit Unit Drain-Source voltage VDSS 60 V Gate-Source voltage VGS ± 20 V ID 5.7 A Continuous Drain current @ VGS= 10V; TA=25°C @ VGS= 10V; TA=70°C @ VGS= 10V; TA=25°C @ VGS= 10V; TL=25°C Pulsed Drain current (b) (b) Pulsed Source current (Body diode) Power dissipation at TA =25°C Linear derating factor Power dissipation at TA =25°C Linear derating factor Power dissipation at TL =25°C Linear derating factor 4.3 (a)(d) (c) Continuous Source current (Body diode) 4.5 (a) (b) (c) (a) (b) (d) Operating and storage temperature range 7.0 IDM 25.7 A IS 4.1 A ISM 25.7 A PD 1.56 12.5 W mW/°C PD 2.8 22.2 W mW/°C PD 4.14 33.1 W mW/°C Tj, Tstg -55 to 150 °C Symbol Value Unit RθJA 80 °C/W RθJA 45 °C/W RθJL 30.2 °C/W Thermal resistance Parameter Junction to ambient Junction to ambient Junction to lead (a) (b) (d) NOTES: (a) (b) (c) (d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Mounted on FR4 PCB measured at t ≤ 10 sec. Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction temperature. Thermal resistance from junction to solder-point (at the end of the drain lead). Issue 1 - April 2008 © Zetex Semiconductors plc 2008 2 www.zetex.com ZXMN6A25N8 Thermal characteristics 1.6 Max Power Dissipation (W) ID Drain Current (A) RDS(on) 10 Limited 1 DC 100m 1s 100ms 10m 10ms Single Pulse Tamb=25°C 1m 100m 1ms 100µs 1 10 VDS Drain-Source Voltage (V) 1.4 25mm x 25mm 1oz FR4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 80 70 T amb=25°C 60 50 D=0.5 40 30 20 Single Pulse D=0.2 D=0.05 10 0 100µ D=0.1 1m 10m 100m 1 Pulse Width (s) 10 100 1k © Zetex Semiconductors plc 2008 80 100 120 140 160 Single Pulse T amb=25°C 100 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Issue 1 - April 2008 60 Temperature (°C) Derating Curve Maximum Power (W) Thermal Resistance (°C/W) Safe Operating Area 40 Pulse Power Dissipation 3 www.zetex.com ZXMN6A25N8 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Static Symbol Min. Drain-Source breakdown voltage V(BR)DSS 60 Zero gate voltage drain current IDSS Gate-Body leakage IGSS Gate-Source threshold voltage VGS(th) Static Drain-Source ( ) on-state resistance * RDS(on) Forward ( ) (†) Transconductance * gfs Input capacitance Typ. Max. Unit Conditions V ID =250μA, VGS=0V 1.0 µA VDS=60V, VGS=0V 100 nA VGS=±20V, VDS=0V 3 V ID=250μA, VDS=VGS 0.050 0.070 Ω VGS= 10V, ID= 3.6A VGS= 4.5V, ID= 3.0A 10.2 S VDS= 15V, ID= 4.5A Ciss 1063 pF Output capacitance Coss 104 pF Reverse transfer capacitance Crss 64 pF Turn-on-delay time td(on) 3.8 ns Rise time tr 4.0 ns VDD= 30V, VGS= 10V Turn-off delay time td(off) 26.2 ns Fall time tf 10.6 ns ID= 1A RG ≅ 6.0Ω, Gate charge Qg 11.0 nC Total gate charge Qg 20.4 nC Gate-Source charge Qgs 4.1 nC Gate-Drain charge Qgd 5.1 nC VSD 0.85 trr 22.0 ns Qrr 21.4 nC Dynamic 1 (†) Switching VDS= 30V, VGS=0V f=1MHz (‡) (†) VDS= 30V, VGS= 5V ID= 4.5A VDS= 30V, VGS= 10V ID= 4.5A Source–Drain diode Diode forward voltage Reverse recovery time ( ) * (‡) Reverse recovery charge (‡) 0.95 V IS= 5.5A,VGS=0V IS= 2.2A,di/dt=100A/μs NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. (†)Switching characteristics are independent of operating junction temperature. (‡)For design aid only, not subject to production testing Issue 1 - April 2008 © Zetex Semiconductors plc 2008 4 www.zetex.com ZXMN6A25N8 Typical characteristics 10V T = 150°C 4.5V 4V ID Drain Current (A) ID Drain Current (A) T = 25°C 10 3.5V 1 3V 0.1 VGS 2.5V 0.01 0.1 1 4.5V 10V 10 4V 3.5V 3V 1 2.5V 0.1 VGS 2V 0.01 10 0.1 VDS Drain-Source Voltage (V) 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics 1.4 Normalised RDS(on) and VGS(th) ID Drain Current (A) 10 T = 150°C 1 T = 25°C 0.1 VDS = 10V 0.01 2 3 4 VGS Gate-Source Voltage (V) 5 1000 T = 25°C VGS 3V 3.5V 10 4V 4.5V 1 10V 0.1 0.01 RDS(on) 1.0 0.8 VGS(th) VGS = VDS 0.6 0.4 -50 ID = 250uA 0 50 100 Tj Junction Temperature (°C) 150 100 2.5V 100 0.01 ID = 4.5A Normalised Curves v Temperature ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance (Ω) Typical Transfer Characteristics VGS = 10V 1.2 0.1 1 ID Drain Current (A) © Zetex Semiconductors plc 2008 T = 25°C 1 0.1 0.01 0.2 10 On-Resistance v Drain Current Issue 1 - April 2008 T = 150°C 10 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) 1.2 Source-Drain Diode Forward Voltage 5 www.zetex.com ZXMN6A25N8 Typical characteristics 1600 10 C Capacitance (pF) 1400 VGS Gate-Source Voltage (V) VGS = 0V f = 1MHz 1200 1000 CISS 800 COSS 600 CRSS 400 200 0 0.1 1 10 VDS - Drain - Source Voltage (V) ID = 4.5A 8 6 4 2 VDS = 30V 0 0 5 10 15 20 25 Q - Charge (nC) Gate-Source Voltage v Gate Charge Capacitance v Drain-Source Voltage Test circuits Issue 1 - April 2008 © Zetex Semiconductors plc 2008 6 www.zetex.com ZXMN6A25N8 Package outline SO8 SO8 Package Information DIM Inches Millimeters DIM Inches Min. Millimeters Min. Max. Min. Max. Max. A 0.053 0.069 1.35 1.75 e A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 H 0.228 0.244 5.80 6.20 U 0° 8° 0° 8° E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50 L 0.016 0.050 0.40 1.27 - - - - - 0.050 BSC Min. Max. 1.27 BSC Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Issue 1 - April 2008 © Zetex Semiconductors plc 2008 7 www.zetex.com ZXMN6A25N8 Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. 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Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. 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