ZXMP3A16DN8 DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.045 ; ID= -5.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Low on-resistance SO8 • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • Motor Drive • LCD backlighting ORDERING INFORMATION DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXMP3A16DN8TA 7’‘ 12mm 500 units ZXMP3A16DN8TC 13’‘ 12mm 2500 units PINOUT DEVICE MARKING ZXMP 3A16 Top view ISSUE 2 - MAY 2007 1 ZXMP3A16DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -30 V Gate-Source Voltage V GS ⫾20 V Continuous Drain Current@V GS =10V; T A =25⬚C (b)(d) @V GS =10V; T A =70⬚C (b)(d) @V GS =10V; T A =25⬚C (a)(d) ID -5.5 -4.4 -4.2 A A A Pulsed Drain Current (c) I DM -20 A Continuous Source Current (Body Diode) (b) IS -3.2 A Pulsed Source Current (Body Diode) (c) I SM -20 A Power Dissipation at T A =25°C (a)(d) Linear Derating Factor PD 1.25 10 W mW/°C Power Dissipation at T A =25°C (a)(e) Linear Derating Factor PD 1.8 14 W mW/°C Power Dissipation at T A =25°C (b)(d) Linear Derating Factor PD 2.1 17 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a)(d) R θJA 100 °C/W Junction to Ambient (b)(e) R θJA 70 °C/W Junction to Ambient (b)(d) R θJA 60 °C/W Notes (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For dual device with 2 active die running at equal power. ISSUE 2 - MAY 2007 2 ZXMP3A16DN8 RDS(on) 10 Limited Max Power Dissipation (W) -ID Drain Current (A) CHARACTERISTICS 1 DC 1s 100ms 100m 10m 10ms Single Pulse Tamb=25°C One active die 100m 1ms 100µs 1 10 -VDS Drain-Source Voltage (V) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 Two active die One active die 20 60 80 100 120 140 160 Temperature (°C) Derating Curve Safe Operating Area 110 Tamb=25°C 100 90 One active die 80 70 60 D=0.5 50 40 Single Pulse 30 D=0.2 20 D=0.05 10 D=0.1 0 100µ 1m 10m 100m 1 10 100 1k MaximumPower (W) Thermal Resistance (°C/W) 40 Single Pulse Tamb=25°C One active die 100 10 1 100µ 1m Pulse Width (s) 10m 100m 1 10 100 Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation ISSUE 2 - MAY 2007 3 1k ZXMP3A16DN8 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage V (BR)DSS -30 Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) TYP. MAX. UNIT CONDITIONS STATIC I D =-250μA, V GS =0V -1.0 A V DS =-30V, V GS =0V 100 nA V GS =⫾20V, V DS =0V -1.0 Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (1)(3) V 0.045 0.070 V I =-250A, D V DS = V GS ⍀ ⍀ V GS =-10V, I D =-4.2A V GS =-4.5V, I D =-3.4A V DS =-15V,I D =-4.2A g fs 9.2 S Input Capacitance C iss 1022 pF Output Capacitance C oss 267 pF Reverse Transfer Capacitance C rss 229 pF Turn-On Delay Time t d(on) 3.8 ns Rise Time tr 6.5 ns Turn-Off Delay Time t d(off) 37.1 ns Fall Time tf 21.4 ns Gate Charge Qg 17.2 nC Total Gate Charge Qg 29.6 nC Gate-Source Charge Q gs 2.8 nC Gate-Drain Charge Q gd 8.6 nC V SD -0.85 t rr Q rr DYNAMIC (3) SWITCHING V DS =-15 V, V GS =0V, f=1MHz (2) (3) V DD =-15V, I D =-1A R G =6.0Ω, V GS =-10V V DS =-15V,V GS =-5V, I D =-4.2A VDS=-15V,VGS=-10V, I D =-4.2A SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) -0.95 V T J =25°C, I S =-3.6A, V GS =0V 21.7 ns T J =25°C, I F =-2A, di/dt= 100A/μs 16.1 nC NOTES (1) Measured under pulsed conditions. Width ≤300μs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 2 - MAY 2007 4 ZXMP3A16DN8 TYPICAL CHARACTERISTICS -ID Drain Current (A) 4V T = 150°C 3.5V 3V 2.5V 10 -ID Drain Current (A) 10V T = 25°C 2V 1 -VGS 0.1 1.5V 0.01 0.1 1 4V 3.5V 3V 2.5V 2V 1 1.5V -VGS 0.1 0.01 10 10V 10 0.1 -VDS Drain-Source Voltage (V) 1 10 -VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics 1.6 T = 150°C T = 25°C 1 -VDS = 10V 0.1 1 2 VGS = -10V ID = -4.2A 1.4 Normalised RDS(on) and VGS(th) -ID Drain Current (A) 10 RDS(on) 1.2 1.0 VGS(th) 0.8 VGS = VDS ID = -250uA 0.6 0.4 -50 3 -VGS Gate-Source Voltage (V) 0 50 100 150 Tj Junction Temperature (°C) Typical Transfer Characteristics Normalised Curves v Temperature T = 25°C -ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance (Ω) 100 1.5V 100 -VGS 2V 10 2.5V 3V 1 3.5V 4V 0.1 10V 0.01 0.01 0.1 1 T = 150°C 10 0.1 0.010.0 10 -ID Drain Current (A) T = 25°C 1 0.2 0.4 0.6 0.8 1.0 1.2 -VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance v Drain Current ISSUE 2 - MAY 2007 5 ZXMP3A16DN8 ISSUE 2 - MAY 2007 6 ZXMP3A16DN8 Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user's application and meets with the user's requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Zetex' terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. Quality of product Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. Green compliance Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. Product status key: "Preview"Future device intended for production at some point. Samples may be available "Active"Product status recommended for new designs "Last time buy (LTB)"Device will be discontinued and last time buy period and delivery is in effect "Not recommended for new designs"Device is still in production to support existing designs and production "Obsolete"Production has been discontinued Datasheet status key: "Draft version"This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. "Provisional version"This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. "Issue"This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. ISSUE 2 - MAY 2007 7 ZXMP3A16DN8 PACKAGE OUTLINE CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max A 1.35 1.75 0.053 0.069 e A1 0.10 0.25 0.004 0.010 b 0.33 0.51 0.013 0.020 D 4.80 5.00 0.189 0.197 c 0.19 0.25 0.008 0.010 H 5.80 6.20 0.228 0.244 ⍜ 0° 8° 0° 8° E 3.80 4.00 0.150 0.157 h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 - - - - - 1.27 BSC Min Max 0.050 BSC © Zetex Semiconductors plc 2007 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Kustermann-Park Balanstraße 59 D-81541 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] ISSUE 2 - MAY 2007 8