DIODES DMC3028LSD

A Product Line of
Diodes Incorporated
DMC3028LSD
30V COMPLEMENTARY DUAL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Product Summary
Device
Features and Benefits
Q1
ID
RDS(on)
V(BR)DSS
TA = 25°C
28mΩ @ VGS= 10V
7.1A
45mΩ @ VGS= 4.5V
5.6A
25mΩ @ VGS= -10V
-7.4A
41mΩ @ VGS= -4.5V
-5.7A
•
Low on-resistance
•
Fast switching speed
•
“Green” Component and RoHS Compliant (Note 1)
30V
Q2
Mechanical Data
-30V
Description and Applications
This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power
management applications.
•
Motor control
•
Backlighting
•
DC-DC Converters
•
Power management functions
Case: SO-8
•
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminals Connections: See Diagram
•
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.074 grams (approximate)
S1
D1
G1
D1
S2
D2
G2
D2
TOP VIEW
Ordering Information
•
D1
G2
G1
S1
Q1 N-Channel
Top view
D2
S2
Q2 P-Channel
(Note 1)
Product
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
DMC3028LSD-13
C3028LD
13
12
2,500
Note:
1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website
Marking Information
C3028LD
YY WW
DMC3028LSD
Document Revision: 4
= Manufacturer’s Marking
C3028LD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
1 of 11
www.diodes.com
July 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMC3028LSD
Maximum Ratings
@TA = 25°C unless otherwise specified
Symbol
N-Channel - Q1
P-Channel - Q2
Drain-Source Voltage
Characteristic
VDSS
30
-30
V
Gate-Source Voltage
VGSS
±20
±20
V
(Notes 3 & 5)
7.1
-7.4
TA = 70°C (Notes 3 & 5)
5.7
-5.9
5.5
6.6
-5.8
-6.8
Continuous Drain Current
VGS = 10V
Pulsed Drain Current
VGS = 10V
ID
(Notes 2 & 5)
(Notes 2 & 6)
Units
A
(Notes 4 & 5)
IDM
34
-36
A
Continuous Source Current (Body diode)
(Notes 3 & 5)
IS
3.5
-3.5
A
Pulsed Source Current (Body diode)
(Notes 4 & 5)
ISM
34
-36
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
N-Channel - Q1
P-Channel - Q2
Power Dissipation
Linear Derating Factor
(Notes 2 & 5)
PD
1.3
10
Power Dissipation
Linear Derating Factor
(Notes 2 & 6)
PD
1.8
14
Power Dissipation
Linear Derating Factor
(Notes 3 & 5)
PD
2.1
17
Thermal Resistance, Junction to Ambient
(Notes 2 & 5)
(Notes 2 & 6)
(Notes 3 & 5)
RθJA
100
70
60
Thermal Resistance, Junction to Lead
(Notes 5 & 7)
Operating and Storage Temperature Range
Notes:
RθJL
TJ, TSTG
51
°C/W
46
-55 to +150
Unit
W
mW/°C
W
mW/°C
W
mW/°C
°C/W
°C
2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t ≤ 10 sec.
4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. For a dual device with one active die.
6. For a device with two active die running at equal power.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).
DMC3028LSD
Document Revision: 4
2 of 11
www.diodes.com
July 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMC3028LSD
RDS(ON)
-ID Drain Current (A)
ID Drain Current (A)
RDS(ON)
10 Limited
DC
1
1s
100ms
100m
10m
1ms
100us
1s
100ms
1
1ms
100us
Single Pulse, T amb=25°C
0.1
10
10ms
Notes 2 & 5
10m
Single Pulse, T amb=25°C
0.1
DC
1
100m
10ms
Notes 2 & 5
10 Limited
VDS Drain-Source Voltage (V)
1
10
-VDS Drain-Source Voltage (V)
N-channel Safe Operating Area
P-channel Safe Operating Area
80
60
D=0.5
40
Single Pulse
D=0.2
20
D=0.05
0
100µ
D=0.1
1m
10m 100m
1
10
100
1k
Max Power Dissipation (W)
Thermal Resistance (°C/W)
2.0
100
1.5
Two active die
One active die
1.0
0.5
0.0
0
Pulse Width (s)
50
75
100
125
150
Temperature (°C)
Transient Thermal Impedance
Maximum Power (W)
25
Derating Curve
Single Pulse
T amb=25°C
100
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
DMC3028LSD
Document Revision: 4
3 of 11
www.diodes.com
July 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMC3028LSD
Electrical Characteristics – Q1 N-Channel
Characteristic
OFF CHARACTERISTICS
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
30
⎯
⎯
V
ID = 250μA, VGS= 0V
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
0.5
μA
VDS= 30V, VGS= 0V
Gate-Source Leakage
IGSS
⎯
⎯
±100
nA
VGS= ±20V, VDS= 0V
VGS(th)
1.0
⎯
3.0
V
ID= 250μA, VDS= VGS
RDS (ON)
⎯
⎯
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
0.028
0.045
Ω
VGS= 10V, ID= 6.0A
VGS= 4.5V, ID= 4.9A
gfs
⎯
12
⎯
S
VDS= 15V, ID= 6.0A
Diode Forward Voltage (Note 8)
VSD
⎯
0.68
1.2
V
IS= 1.7A, VGS= 0V
Reverse recovery time (Note 9)
trr
11.5
⎯
ns
Reverse recovery charge (Note 9)
Qrr
⎯
4.4
⎯
nC
Input Capacitance
Ciss
⎯
472
⎯
pF
Output Capacitance
Coss
⎯
178
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
65
⎯
pF
Total Gate Charge
Qg
⎯
5.2
⎯
nC
Total Gate Charge
Qg
⎯
10.5
⎯
nC
Gate-Source Charge
Qgs
⎯
1.86
⎯
nC
Gate-Drain Charge
Qgd
⎯
2.3
⎯
nC
Turn-On Delay Time (Note 10)
tD(on)
⎯
2.5
⎯
ns
Turn-On Rise Time (Note 10)
tr
⎯
3.1
⎯
ns
Turn-Off Delay Time (Note 10)
tD(off)
⎯
14
⎯
ns
tf
⎯
9.7
⎯
ns
Forward Transconductance (Notes 8 & 9)
IS= 1.7A, di/dt= 100A/μs
DYNAMIC CHARACTERISTICS (Note 9)
Turn-Off Fall Time (Note 10)
Notes:
VDS= 15V, VGS= 0V
f= 1MHz
VDS= 15V, VGS= 4.5V
ID= 6A
VDS= 15V, VGS= 10V
ID= 6A
VDD= 15V, VGS= 10V
ID= 1A, RG ≅ 6.0Ω
8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
DMC3028LSD
Document Revision: 4
4 of 11
www.diodes.com
July 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMC3028LSD
Q1 N-Channel
5V
T = 150°C
4.5V
4V
ID Drain Current (A)
3.5V
1
3V
0.1
2.5V
VGS
T = 25°C
10V
4.5V
4V
10
ID Drain Current (A)
10V
10
3.5V
3V
1
2.5V
0.1
2V
VGS
0.01
0.01
0.1
1
10
0.1
VDS Drain-Source Voltage (V)
1
10
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
ID Drain Current (A)
VDS = 10V
T = 150°C
1
T = 25°C
0.1
2
3
4
VGS Gate-Source Voltage (V)
DMC3028LSD
Document Revision: 4
1000
ID = 6A
RDS(on)
1.2
1.0
VGS(th)
0.8
VGS = VDS
0.6
0.4
-50
ID = 250uA
0
50
100
Tj Junction Temperature (°C)
150
10
2.5V
VGS
T = 25°C
100
3V
10
3.5V
4V
1
4.5V
0.1
10V
0.01
0.01
VGS = 10V
1.4
Normalised Curves v Temperature
0.1
1
10
ID Drain Current (A)
On-Resistance v Drain Current
ISD Reverse Drain Current (A)
RDS(on) Drain-Source On-Resistance (W)
Typical Transfer Characteristics
Normalised RDS(on) and VGS(th)
1.6
10
1
T = 150°C
0.1
T = 25°C
0.01
Vgs = -3V
1E-3
0.2
0.4
0.6
0.8
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
5 of 11
www.diodes.com
July 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMC3028LSD
Q1 N-Channel continued
VGS = 0V
C Capacitance (pF)
600
f = 1MHz
500
400
CISS
COSS
300
200
100
CRSS
0
1
10
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
VGS Gate-Source Voltage (V)
700
10
9
8
7
6
5
4
3
2
1
0
ID = 6A
VDS = 15V
0
1
2
3
4
5
6
7
Q - Charge (nC)
8
9
10 11
Gate-Source Voltage v Gate Charge
Test Circuits – Q1 N-Channel
Current
regulator
QG
50k
12V
VG
Q GS
Same as
D.U.T
Q GD
V DS
IG
D.U.T
ID
V GS
Charge
Basic gate charge waveform
Gate charge test circuit
V DS
90%
RD
V GS
V DS
RG
VDD
10%
V GS
td(on)
tr
t(on)
td(off)
tr
t(on)
Switching time waveforms
DMC3028LSD
Document Revision: 4
Switching time test circuit
6 of 11
www.diodes.com
July 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMC3028LSD
Electrical Characteristics – Q2 P-Channel
Characteristic
OFF CHARACTERISTICS
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
-30
⎯
⎯
V
ID = -250μA, VGS= 0V
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
-0.5
μA
VDS= -30V, VGS= 0V
Gate-Source Leakage
IGSS
⎯
⎯
±100
nA
VGS= ±20V, VDS= 0V
VGS(th)
-1.0
⎯
-3.0
V
ID= -250μA, VDS= VGS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS= -10V, ID= -7.1A
RDS (ON)
⎯
Forward Transconductance (Notes 8 & 9)
gfs
⎯
18.6
⎯
S
VDS= -15V, ID= -7.1A
Diode Forward Voltage (Note 8)
VSD
⎯
-0.80
-1.2
V
IS= -1.7A, VGS= 0V
Reverse recovery time (Note 9)
trr
16.2
⎯
ns
Reverse recovery charge (Note 9)
Qrr
⎯
10
⎯
nC
Input Capacitance
Ciss
⎯
1678
⎯
pF
Output Capacitance
Coss
⎯
303
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
178
⎯
pF
Total Gate Charge
Qg
⎯
16.4
⎯
nC
Static Drain-Source On-Resistance (Note 8)
⎯
0.025
0.041
Ω
VGS= -4.5V, ID= -5.5A
IS= -2.2A, di/dt= 100A/μs
DYNAMIC CHARACTERISTICS (Note 9)
Total Gate Charge
Qg
⎯
31.6
⎯
nC
Gate-Source Charge
Qgs
⎯
4.3
⎯
nC
Gate-Drain Charge
Qgd
⎯
6.2
⎯
nC
Turn-On Delay Time (Note 10)
tD(on)
⎯
3.5
⎯
ns
Turn-On Rise Time (Note 10)
tr
⎯
4.9
⎯
ns
Turn-Off Delay Time (Note 10)
tD(off)
⎯
44
⎯
ns
tf
⎯
28
⎯
ns
Turn-Off Fall Time (Note 10)
Notes:
VDS= -15V, VGS= 0V
f= 1MHz
VDS= -15V, VGS= -4.5V
ID= -7.1A
VDS= -15V, VGS= -10V
ID= -7.1A
VDD= -15V, VGS= -10V
ID= -1A, RG ≅ 6.0Ω
8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
DMC3028LSD
Document Revision: 4
7 of 11
www.diodes.com
July 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMC3028LSD
Q2 P-Channel
T = 150°C
3.5V
4.5V
-ID Drain Current (A)
-ID Drain Current (A)
10V
3V
10
2.5V
1
VGS
T = 25°C
10V
3.5V
3V
10
2.5V
1
2V
0.1
VGS
0.1
0.01
0.1
1
10
0.1
-VDS Drain-Source Voltage (V)
1
10
-VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
T = 150°C
1
T = 25°C
0.1
2
3
-VGS Gate-Source Voltage (V)
RDS(on) Drain-Source On-Resistance (Ω)
Typical Transfer Characteristics
DMC3028LSD
Document Revision: 4
10
T = 25°C
VGS
2.5V
3V
1
3.5V
0.1
4V
10V
0.01
0.1
1
10
-ID Drain Current (A)
On-Resistance v Drain Current
VGS = 10V
ID = 7.1A
1.4
RDS(on)
1.2
1.0
0.8
VGS = VDS
0.6
0.4
-50
VGS(th)
ID = 250uA
0
50
100
Tj Junction Temperature (°C)
150
Normalised Curves v Temperature
-ISD Reverse Drain Current (A)
-ID Drain Current (A)
VDS = 10V
Normalised RDS(on) and VGS(th)
1.6
10
10
1
T = 150°C
T = 25°C
0.1
0.01
Vgs = 0V
1E-3
0.2
0.4
0.6
0.8
1.0
-VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
8 of 11
www.diodes.com
July 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMC3028LSD
Q2 P-Channel continued
-VGS Gate-Source Voltage (V)
2500
C Capacitance (pF)
VGS = 0V
f = 1MHz
2000
CISS
1500
COSS
1000
CRSS
500
0
1
10
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
10
9
8
7
6
5
4
3
2
1
0
ID = 7.1A
VDS = 15V
0
5
10
15
20
Q - Charge (nC)
25
30
35
Gate-Source Voltage v Gate Charge
Test Circuits – Q2 P-Channel
Current
regulator
QG
12V
VG
QGS
50k
0.2␮F
Same as
D.U.T
QGD
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VDD
10%
VGS
td(off)
tr
t(on)
tr
t(on)
Switching time waveforms
DMC3028LSD
Document Revision: 4
Pulse width ⬍ 1␮S
Duty factor 0.1%
td(on)
Switching time test circuit
9 of 11
www.diodes.com
July 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMC3028LSD
h x 45°
Package Outline Dimensions
DIM
Inches
Millimeters
DIM
Inches
Min.
Millimeters
Max.
Max.
Min.
Max.
A
0.053
0.069
1.35
1.75
e
A1
0.004
0.010
0.10
0.25
b
0.013
0.020
0.33
0.51
D
0.189
0.197
4.80
5.00
c
0.008
0.010
0.19
0.25
H
0.228
0.244
5.80
6.20
θ
0°
8°
0°
8°
E
0.150
0.157
3.80
4.00
h
0.010
0.020
0.25
0.50
L
0.016
0.050
0.40
1.27
-
-
-
-
-
0.050 BSC
Min.
Max.
Min.
1.27 BSC
Suggested Pad Layout
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.27
0.050
mm
inches
DMC3028LSD
Document Revision: 4
10 of 11
www.diodes.com
July 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMC3028LSD
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
DMC3028LSD
Document Revision: 4
11 of 11
www.diodes.com
July 2009
© Diodes Incorporated