A Product Line of Diodes Incorporated DMC4028SSD ADVANCE INFORMATION 40V COMPLEMENTARY DUAL ENHANCEMENT MODE MOSFET Product Summary Device Features and Benefits RDS(on) Max ID TA = +25C Fast Switching Speed 28m @ VGS= 10V 7.2A Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 49m @ VGS= 4.5V 5.4A Halogen and Antimony Free. “Green” Device (Note 3) 50m @ VGS= -10V -5.2A Qualified to AEC-Q101 Standards for High Reliability 79m @ VGS= -4.5V -4.7A V(BR)DSS Q1 40V Q2 -40V Low On-Resistance Mechanical Data Description This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Motor Control Backlighting DC-DC Converters Power Management Functions Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See diagram below Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.074 grams (approximate) D1 SO-8 S1 D1 G1 D1 S2 D2 G2 D2 G2 G1 S2 S1 Q1 N-Channel Top view Top View Top View D2 Q2 P-Channel Equivalent Circuit Ordering Information (Note 4) Part Number DMC4028SSD-13 DMC4028SSDQ-13 Notes: Compliance Standard Automotive Case SO-8 SO-8 Packaging 2500 / Tape & Reel 2500 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information C4028SD YY WW DMC4028SSD Document Number: D35041 Rev: 2 - 2 C4028DQ YY WW = Manufacturer’s Marking C4028SD = Product Type Marking Code for DMC4028SSD-13 C4028DQ = Product Type Marking Code for DMC4028SSDQ-13 YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01 - 53) 1 of 11 www.diodes.com April 2013 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMC4028SSD Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage (Note 5) Symbol N-Channel - Q1 P-Channel - Q2 Units VDSS 40 -40 V VGSS 20 20 V 7.2 5.2 5.5 4.2 5.4 6.5 4 4.8 (Notes 7 & 9) Continuous Drain Current VGS = 10V Pulsed Drain Current VGS = 10V TA = 70°C (Notes 7 & 9) (Notes 6 & 9) (Notes 6 & 10) (Notes 7 & 9) ID A IDM 27.3 20.4 A Continuous Source Current (Body diode) (Notes 7 & 9) IS 3.35 3.15 A Pulsed Source Current (Body diode) (Notes 8 & 9) ISM 27.3 20.4 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol (Notes 6 & 9) Power Dissipation Linear Derating Factor (Notes 6 & 10) PD (Notes 7 & 9) (Notes 6 & 9) Thermal Resistance, Junction to Ambient (Notes 6 & 10) (Notes 7 & 9) RθJA Thermal Resistance, Junction to Lead (Notes 9 & 11) RθJL Operating and Storage Temperature Range Notes: TJ, TSTG N-Channel - Q1 P-Channel - Q2 1.25 10 1.8 14.3 2.16 17.2 100 W mW/°C 70 58 °C/W 53 Unit 53 -55 to +150 °C 5. AEC-Q101 VGS maximum is 16V. 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 7. Same as note (5), except the device is measured at t 10 sec. 8. Same as note (5), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 9. For a dual device with one active die. 10. For a device with two active die running at equal power. 11. Thermal resistance from junction to solder-point (at the end of the drain lead). DMC4028SSD Document Number: D35041 Rev: 2 - 2 2 of 11 www.diodes.com April 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DMC4028SSD RDS(ON) 10 Limited -ID Drain Current (A) ID Drain Current (A) RDS(ON) DC 1 1s 100ms 100m 1ms 100us Limited 1 DC 1s 100ms 1 1ms 100us PNP @ Single Pulse, T amb=25°C 0.1 10 VDS Drain-Source Voltage (V) 10ms (Note 3 & 6) 10m NPN @ Single Pulse, T amb=25°C 0.1 10 100m 10ms (Note 3 & 6) 10m 1 10 -VDS Drain-Source Voltage (V) N-channel Safe Operating Area P-channel Safe Operating Area 100 80 60 D=0.5 40 Single Pulse D=0.2 20 D=0.05 0 100µ D=0.1 1m 10m 100m 1 10 100 1k Pulse Width (s) Max Power Dissipation (W) Thermal Resistance (°C/W) 2.0 1.5 Two active die One active die 1.0 0.5 0.0 Transient Thermal Impedance Maximum Power (W) ADVANCE INFORMATION Thermal Characteristics 0 25 50 75 100 125 150 Temperature (°C) Derating Curve Single Pulse T amb=25°C 100 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation DMC4028SSD Document Number: D35041 Rev: 2 - 2 3 of 11 www.diodes.com April 2013 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMC4028SSD Electrical Characteristics – Q1 N-Channel (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 40 V ID = 250µA, VGS = 0V Zero Gate Voltage Drain Current IDSS 0.5 µA VDS = 40V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V VGS(th) 1.0 V ID = 250µA, VDS = VGS ON CHARACTERISTICS Gate Threshold Voltage 3.0 0.018 0.028 0.033 0.049 VGS = 10V, ID = 6A RDS (ON) Forward Transconductance (Notes 12 & 13) gfs 22.8 S VDS = 15V, ID = 6A Diode Forward Voltage (Note 12) VSD 0.845 1.1 V IS = 6A, VGS = 0V Static Drain-Source On-Resistance (Note 12) Ω Reverse recovery time (Note 13) trr 135 ns Reverse recovery charge (Note 13) Qrr 799 nC Input Capacitance Ciss 604 pF Output Capacitance Coss 106 pF Reverse Transfer Capacitance Crss 59.6 pF Total Gate Charge (Note 14) Qg 6.5 nC Total Gate Charge (Note 14) Qg 12.9 nC Gate-Source Charge (Note 14) Qgs 2.3 nC VGS = 4.5V, ID = 5A IS = 6A, di/dt = 100A/s DYNAMIC CHARACTERISTICS (Note 13) Gate-Drain Charge (Note 14) Qgd 3.6 nC Turn-On Delay Time (Note 14) tD(on) 4.2 ns Turn-On Rise Time (Note 14) tr 12.4 ns Turn-Off Delay Time (Note 14) tD(off) 13.8 ns tf 10.7 ns Turn-Off Fall Time (Note 14) Notes: VDS = 20V, VGS = 0V f = 1MHz VGS = 4.5V VGS = 10V VDS = 20V ID = 6A VDD = 20V, VGS = 10V ID = 6A, RG 6.0 12. Measured under pulsed conditions. Pulse width 300s; duty cycle 2% 13. For design aid only, not subject to production testing. 14. Switching characteristics are independent of operating junction temperatures. DMC4028SSD Document Number: D35041 Rev: 2 - 2 4 of 11 www.diodes.com April 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DMC4028SSD T = 25°C 4.5V 10 3.5V 3V 1 VGS 0.1 2.5V 0.01 0.1 1 T = 150°C 10V 4V 10 ID Drain Current (A) ID Drain Current (A) 10V 3.5V 3V 1 2.5V 0.1 0.01 10 VDS Drain-Source Voltage (V) 2V VGS 0.1 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics T = 150°C 0.1 T = 25°C 0.01 1E-3 1 2 3 VGS Gate-Source Voltage (V) Typical Transfer Characteristics 10 T = 25°C VGS 3V 3.5V 1 0.1 4V 4.5V 10V 0.01 0.01 0.1 1 10 ID Drain Current (A) On-Resistance v Drain Current DMC4028SSD Document Number: D35041 Rev: 2 - 2 VGS = 10V 1.4 ID = 12A RDS(on) 1.2 1.0 0.8 0.6 0.4 -50 VGS(th) VGS = VDS ID = 250uA 0 50 100 Tj Junction Temperature (°C) 150 Normalised Curves v Temperature ISD Reverse Drain Current (A) ID Drain Current (A) 1 Normalised RDS(on) and VGS(th) 1.6 VDS = 10V RDS(on) Drain-Source On-Resistance () ADVANCE INFORMATION Typical Characteristics – Q1 N-Channel 10 1 T = 150°C 0.1 T = 25°C 0.01 Vgs = 0V 1E-3 0.2 0.4 0.6 0.8 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 11 www.diodes.com 1.0 April 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DMC4028SSD ADVANCE INFORMATION Typical Characteristics – Q1 N-Channel - (cont.) C Capacitance (pF) f = 1MHz 600 CISS COSS 400 CRSS 200 0 0.1 1 10 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage VGS Gate-Source Voltage (V) 10 VGS = 0V 800 8 6 4 VDS = 20V 2 0 ID = 6A 0 2 4 6 8 10 12 14 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits – Q1 N-Channel Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit V DS 90% RD V GS V DS RG VDD 10% V GS td(on) tr t(on) td(off) tr t(on) Switching time waveforms DMC4028SSD Document Number: D35041 Rev: 2 - 2 Switching time test circuit 6 of 11 www.diodes.com April 2013 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION DMC4028SSD Electrical Characteristics – Q2 P-Channel (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS -40 — — V ID = -250 µA, VGS = 0V Zero Gate Voltage Drain Current IDSS — — -0.5 µA VDS = -40V, VGS = 0V Gate-Source Leakage IGSS — — 100 nA VGS = 20V, VDS = 0V VGS(th) -1.0 V ID = -250 µA, VDS = VGS ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 12) – -3.0 0.039 0.050 0.060 0.079 Ω VGS = -10V, ID = -6A RDS(ON) — Forward Transconductance (Notes 12 & 13) gfs — 16.6 — S VDS = -15V, ID = -6A Diode Forward Voltage (Note 13) VSD — -0.865 -1.1 V IS = -6A, VGS = 0V Reverse Recovery Time (Note 13) trr — 138 — ns Reverse Recovery Charge (Note 13) Qrr — 841 — nC Input Capacitance Ciss — 674 — pF Output Capacitance Coss — 115 — pF Reverse Transfer Capacitance Crss — 67.7 — pF Total Gate Charge (Note 14) Qg — 7.0 — nC Total Gate Charge (Note 14) Qg — 14 — nC Gate-Source Charge (Note 14) Qgs — 2.2 — nC VGS = -4.5V, ID = -5A IS = -6A, di/dt = 100A/µs DYNAMIC CHARACTERISTICS (Note 13) Gate-Drain Charge (Note 14) Qgd — 3.7 — nC Turn-On Delay Time (Note 14) tD(on) — 2.3 — ns Turn-On Rise Time (Note 14) tr — 14.1 — ns tD(off) — 25.1 — ns tf — 14.3 — ns Turn-Off Delay Time (Note 14) Turn-Off Fall Time (Note 14) Notes: VDS = -20V, VGS = 0V f = 1MHz VGS = -4.5V VGS = -10V VDS = -20V ID = -6A VDD = -20V, VGS = -10V ID = -6A, RG 6.0 12. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2% 13. For design aid only, not subject to production testing. 14. Switching characteristics are independent of operating junction temperatures. DMC4028SSD Document Number: D35041 Rev: 2 - 2 7 of 11 www.diodes.com April 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DMC4028SSD -ID Drain Current (A) 10 4V 3V 1 2.5V 0.1 -VGS 0.01 0.1 1 -VGS Normalised RDS(on) and VGS(th) T = 25°C 3.0 3.5 Typical Transfer Characteristics -VGS T = 25°C 2.5V 3V 1 3.5V 4V 0.1 4.5V 10V 0.01 0.01 0.1 1 -ID Drain Current (A) 10 On-Resistance v Drain Current DMC4028SSD Document Number: D35041 Rev: 2 - 2 1 10 1.6 VGS = -10V ID = -12A 1.4 RDS(on) 1.2 1.0 0.8 0.6 -50 VGS(th) VGS = VDS ID = -250uA 0 50 100 Tj Junction Temperature (°C) 150 Normalised Curves v Temperature -ISD Reverse Drain Current (A) -ID Drain Current (A) T = 150°C 2.5 0.1 Output Characteristics 1 2.0 2V 0.1 -VDS Drain-Source Voltage (V) -VDS = 10V -VGS Gate-Source Voltage (V) 3V 2.5V Output Characteristics 0.1 1.5 3.5V 1 0.01 10 4V 10 -VDS Drain-Source Voltage (V) 10 10V T = 150°C 3.5V -ID Drain Current (A) 10V T = 25°C RDS(on) Drain-Source On-Resistance ADVANCE INFORMATION Typical Characteristics – Q2 P-Channel 10 1 T = 150°C T = 25°C 0.1 0.01 1E-3 0.2 0.4 0.6 0.8 1.0 -VSD Source-Drain Voltage (V) 1.2 Source-Drain Diode Forward Voltage 8 of 11 www.diodes.com April 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DMC4028SSD 10 -VGS Gate-Source Voltage (V) 1000 VGS = 0V C Capacitance (pF) ADVANCE INFORMATION Typical Characteristics – Q2 P-Channel – (cont.) f = 1MHz 800 CISS 600 COSS CRSS 400 200 0 0.1 1 10 8 6 4 VDS = -20V 2 0 ID = -6A 0 2 -VDS - Drain - Source Voltage (V) 4 6 8 Q - Charge (nC) 10 12 14 Gate-Source Voltage v Gate Charge Capacitance v Drain-Source Voltage Test Circuits – Q2 P-Channel Current regulator QG 12V VG QGS 50k 0.2F Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VDD 10% VGS tr td(off) t(on) tr td(on) t(on) Switching time waveforms DMC4028SSD Document Number: D35041 Rev: 2 - 2 Pulse width ⬍ 1S Duty factor 0.1% 9 of 11 www.diodes.com Switching time test circuit April 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DMC4028SSD Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 0.254 ADVANCE INFORMATION Package Outline Dimensions E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X C1 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 C2 Y DMC4028SSD Document Number: D35041 Rev: 2 - 2 10 of 11 www.diodes.com April 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DMC4028SSD ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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