S9005P2CT 20A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material - UL Flammability Classification 94V-0 TO-220AB L B C D K A E Mechanical Data · · · · · · M Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: As Marked on Body Weight: 2.24 grams (approx) Mounting Position: Any Marking: Type Number J G N H H P Dim Min Max A 14.22 15.88 B 9.65 10.67 C 2.54 3.43 D 5.84 6.86 E ¾ 6.25 G 12.70 14.73 H 2.29 2.79 J 0.51 1.14 K 3.53Æ 4.09Æ L 3.56 4.83 M 1.14 1.40 N 0.30 0.64 P 2.03 2.92 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol S9005P2CT Unit VRRM VRWM VR 100 V ¾ 110 V IO 20 A IFSM 225 A @ iF = 10A vFM 0.70 V @ TC = 25°C @ TC = 125°C IRM 2.0 80 mA Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Minimum Avalanche Breakdown Voltage per element (Note 1) @ 0.9A Average Rectified Output Current (Note 1 & 3) Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) (Note 3) Instantaneous Forward Voltage Drop Peak Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance per element (Note 2) Voltage Rate of Change at Rated DC Blocking Voltage Non-repetitive Avalanche Energy (Constant Current During a 20ms pulse) @ TC = 125°C Typical Thermal Resistance Junction to Case per element (Note 1) Operating and Storage Temperature Range Notes: Cj 325 pF dv/dt 10000 V/ms W 10 mJ RqJc 1.5 K/W Tj, TSTG -60 +150 °C 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 3. IFSM and IO values shown are for entire package. For any single diode the values are one half of listed value. DS23028 Rev. P-5 1 of 2 S9005P2CT IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FORWARD CURRENT (A) 50 40 30 20 10 0 0 50 100 100 10 1.0 0.1 150 0.2 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 0.4 0.6 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 1000 1000 Tj = 25°C CJ, CAPACITANCE (pF) IF, INSTANTANEOUS REVERSE CURRENT (A) Tj = 25°C Pulse width = 300µs 2% duty cycle 100 10 1.0 Tj = 25°C Pulse width = 300µs 2% duty cycle 0 40 80 10 0.1 100 VF, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 3 Typical Reverse Characteristics DS23028 Rev. P-5 100 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 2 of 2 S9005P2CT