DIODES S9005P2CT

S9005P2CT
20A SCHOTTKY BARRIER RECTIFIER
Features
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Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material - UL Flammability
Classification 94V-0
TO-220AB
L
B
C
D
K
A
E
Mechanical Data
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M
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 2.24 grams (approx)
Mounting Position: Any
Marking: Type Number
J
G
N
H H
P
Dim
Min
Max
A
14.22
15.88
B
9.65
10.67
C
2.54
3.43
D
5.84
6.86
E
¾
6.25
G
12.70
14.73
H
2.29
2.79
J
0.51
1.14
K
3.53Æ
4.09Æ
L
3.56
4.83
M
1.14
1.40
N
0.30
0.64
P
2.03
2.92
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
S9005P2CT
Unit
VRRM
VRWM
VR
100
V
¾
110
V
IO
20
A
IFSM
225
A
@ iF = 10A
vFM
0.70
V
@ TC = 25°C
@ TC = 125°C
IRM
2.0
80
mA
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Minimum Avalanche Breakdown Voltage
per element (Note 1)
@ 0.9A
Average Rectified Output Current
(Note 1 & 3)
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method) (Note 3)
Instantaneous Forward Voltage Drop
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance per element (Note 2)
Voltage Rate of Change at Rated DC Blocking Voltage
Non-repetitive Avalanche Energy
(Constant Current During a 20ms pulse)
@ TC = 125°C
Typical Thermal Resistance Junction to Case per element
(Note 1)
Operating and Storage Temperature Range
Notes:
Cj
325
pF
dv/dt
10000
V/ms
W
10
mJ
RqJc
1.5
K/W
Tj, TSTG
-60 +150
°C
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. IFSM and IO values shown are for entire package. For any single diode the values are one half of listed value.
DS23028 Rev. P-5
1 of 2
S9005P2CT
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FORWARD CURRENT (A)
50
40
30
20
10
0
0
50
100
100
10
1.0
0.1
150
0.2
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
0.4
0.6
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
1000
1000
Tj = 25°C
CJ, CAPACITANCE (pF)
IF, INSTANTANEOUS REVERSE CURRENT (A)
Tj = 25°C
Pulse width = 300µs
2% duty cycle
100
10
1.0
Tj = 25°C
Pulse width = 300µs
2% duty cycle
0
40
80
10
0.1
100
VF, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics
DS23028 Rev. P-5
100
1.0
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
2 of 2
S9005P2CT