FCX493 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SUMMARY VCEO = 100V : IC = 1A Complementary type FCX593 DESCRIPTION Packaged in the SOT89 outline this 100V device provides excellent high performance and is ideally suited to load management functions. FEATURES SOT89 • 1 amp continuous current • Low saturation voltages APPLICATIONS • Load management functions • Solenoid, relay and actuator drivers • DC-DC modules DEVICE MARKING N93 PINOUT ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL FCX493TA 7” 12mm embossed 1000 units FCX493TC 13" 12mm embossed 4000 units TOP VIEW ISSUE 5 - OCTOBER 2005 1 SEMICONDUCTORS FCX493 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Collector-base voltage Collector-emitter voltage V CBO 120 V V CEO 100 V Emitter-base voltage V EBO 5 V Continuous collector current IC 1 A Peak pulse current I CM 2 A Base current IB 200 mA Power dissipation at T amb =25°C P tot 1 W Operating and storage temperature range T j :T stg -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. Breakdown voltages V (BR)CBO 120 MAX. UNIT CONDITIONS V I C =100µA V CEO(sus) 100 V I C =10mA* V (BR)EBO 5 V I E =100µA I CBO 100 nA V CB =100V I CES 100 nA V Emitter cut-off current I EBO 100 nA V EB =4V Collector-emitter saturation voltage V CE(sat) 0.3 0.6 V V I C =500mA, I B =50mA I C =1A, I B =100mA Base-emitter saturation voltage V BE(sat) 1.15 V I C =1A, I B =100mA Base-emitter turn on voltage V BE(on) 1.0 V I =1A, V CE =10V C Static forward current transfer ratio h FE 100 100 60 20 Transition frequency fT 150 Output capacitance C obo Collector cut-off currents =100V I C =1mA, V CE =10V* I C =250mA, V CE =10V* I C =500mA, V CE =10V* I C =1A, V CE =10V* 300 10 CES MHz I C =50mA, V CE =10V f=100MHz pF V CB =10V, f=1MHz *Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ2%. ISSUE 5 - OCTOBER 2005 SEMICONDUCTORS 2 FCX493 TYPICAL CHARACTERISTICS ISSUE 5 - OCTOBER 2005 3 SEMICONDUCTORS FCX493 CHARACTERISTICS ISSUE 5 - OCTOBER 2005 SEMICONDUCTORS 4 FCX493 PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max Min Max A 1.40 1.60 0.550 0.630 e 1.40 1.50 0.055 0.059 b 0.38 0.48 0.015 0.019 E 3.75 4.25 0.150 0.167 b1 - 0.53 - 0.021 E1 - 2.60 - 0.102 b2 1.50 1.80 0.060 0.071 G 2.90 3.00 0.114 0.118 c 0.28 0.44 0.011 0.017 H 2.60 2.85 0.102 0.112 D 4.40 4.60 0.173 0.181 - - - - - © Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 5 - OCTOBER 2005 5 SEMICONDUCTORS