VS-HFA08PB120PbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • Ultrafast and ultrasoft recovery Very low IRRM and Qrr Compliant to RoHS Directive 2002/95/EC Designed and qualified for industrial level BENEFITS • • • • • Cathode to base Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count 2 DESCRIPTION 1 Anode 1 3 Anode 2 TO-247AC modified PRODUCT SUMMARY Package TO-247AC modified (2 pins) IF(AV) 8A VR 1200 V VF at IF 3.3 V trr (typ.) 28 ns TJ max. 150 °C Diode variation Single die VS-HFA08PB120PbF is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 8 A continuous current, the VS-HFA08PB120PbF is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA08PB120PbF is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Maximum continuous forward current SYMBOL TEST CONDITIONS VR IF TC = 100 °C VALUES UNITS 1200 V 8 Single pulse forward current IFSM 130 Maximum repetitive forward current IFRM 32 Maximum power dissipation Operating junction and storage temperature range Document Number: 94040 Revision: 23-May-11 PD TJ, TStg TC = 25 °C 73.5 TC = 100 °C 29 - 55 to + 150 A W °C For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA08PB120PbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 8 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 μA IF = 8.0 A Maximum forward voltage VFM IF = 16 A See fig. 1 IF = 8.0 A, TJ = 125 °C VR = VR rated Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V LS Measured lead to lead 5 mm from package body Series inductance TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 See fig. 3 MIN. TYP. MAX. UNITS 1200 - - - 2.6 3.3 - 3.4 4.3 - 2.4 3.1 - 0.31 10 - 135 1000 - 11 20 pF - 8.0 - nH MIN. TYP. MAX. UNITS - 28 - V μA DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5, 10 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of recovery current during tb See fig. 8 SYMBOL TEST CONDITIONS trr IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V trr1 TJ = 25 °C - 63 95 trr2 TJ = 125 °C - 106 160 - 4.5 8.0 - 6.2 11 - 140 380 - 335 880 ns IRRM1 TJ = 25 °C IRRM2 TJ = 125 °C Qrr1 TJ = 25 °C Qrr2 TJ = 125 °C dI(rec)M/dt1 TJ = 25 °C - 133 - dI(rec)M/dt2 TJ = 125 °C - 85 - MIN. TYP. MAX. UNITS - - 300 °C - - 1.7 IF = 8.0 A dIF/dt = 200 A/μs VR = 200 V A nC A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s Lead temperature Tlead Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA Typical socket mount - - 40 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.25 - - 6.0 - - 0.21 - oz. - 12 (10) kgf · cm (lbf · in) Weight 6.0 (5.0) Mounting torque Marking device www.vishay.com 2 Case style TO-247AC modified (JEDEC) K/W g HFA08PB120 For technical questions within your region, please contact one of the following: Document Number: 94040 [email protected], [email protected], [email protected] Revision: 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA08PB120PbF HEXFRED® Ultrafast Soft Recovery Diode, 8 A Vishay Semiconductors 1000 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) TJ = 150 °C 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C 100 TJ = 100 °C 10 1 TJ = 25 °C 0.1 0.01 1 2 0 4 8 6 0 10 300 600 900 1200 VR - Reverse Voltage (V) VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 1 1 10 100 1000 10 000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Response 10 1 PDM Single pulse (thermal resistance) 0.01 0.00001 t1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 0.0001 0.001 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94040 Revision: 23-May-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA08PB120PbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 8 A 160 1200 IF = 8 A IF = 4 A 140 IF = 8 A IF = 4 A 800 Qrr (nC) trr (ns) 120 100 80 600 400 60 40 VR = 160 V TJ = 125 °C TJ = 25 °C 1000 200 VR = 160 V TJ = 125 °C TJ = 25 °C 20 100 0 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - Typical Stored Charge vs. dIF/dt Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt 20 Irr (A) 12 IF = 8 A IF = 4 A dI(rec)M/dt (A/µs) 16 1000 VR = 160 V TJ = 125 °C TJ = 25 °C IF = 8 A IF = 4 A 8 100 VR = 160 V TJ = 125 °C TJ = 25 °C 4 0 100 1000 dIF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt www.vishay.com 4 10 100 1000 dIF/dt (A/µs) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt For technical questions within your region, please contact one of the following: Document Number: 94040 [email protected], [email protected], [email protected] Revision: 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA08PB120PbF HEXFRED® Ultrafast Soft Recovery Diode, 8 A Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94040 Revision: 23-May-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA08PB120PbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 8 A ORDERING INFORMATION TABLE Device code VS- HF A 08 PB 1 2 3 4 5 120 PbF 6 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Electron irradiated 4 - Current rating (08 = 8A) 5 - PB = TO-247AC modified 6 - Voltage rating: (120 = 1200 V) 7 - PbF = Lead (Pb)-free 7 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95253 Part marking information www.vishay.com/doc?95255 www.vishay.com 6 For technical questions within your region, please contact one of the following: Document Number: 94040 [email protected], [email protected], [email protected] Revision: 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters and inches A A (3) (6) ΦP E B (2) R/2 N A2 S (Datum B) Ø K M DBM ΦP1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb Planting View A - A C 2x e A1 b4 0.10 M C A M (4) E1 (b1, b3, b5) Lead assignments Base metal D DE (c) c1 E C C Diodes 1. - Anode/open 2. - Cathode 3. - Anode (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e K L L1 N P P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerance per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 21-Jun-11 Document Number: 95253 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1