VISHAY 15AWL06FNTR-E3

New Product
VS-15AWL06FN-E3
Vishay Semiconductors
Ultralow VF Ultrafast Rectifier, 15 A FRED Pt®
FEATURES
• Ultrafast recovery time, extremely low VF and
soft recovery
Base cathode
4, 2
• 175 °C maximum operating junction temperature
• For PFC DCM operation
• Low leakage current
D-PAK (TO-252AA)
1
Anode
3
Anode
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION/APPLICATIONS
PRODUCT SUMMARY
Package
D-PAK (TO-252AA)
IF(AV)
15 A
VR
600 V
VF at IF
1.05 V
trr (typ.)
60 ns
TJ max.
175 °C
Diode variation
Single die
State of the art, ultralow VF, soft-switching hyperfast
rectifiers optimized for Discontinuous (Critical) Mode (DCM)
Power Factor Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
600
V
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 148 °C
15
Non-repetitive peak surge current
IFSM
TJ = 25 °C
180
IFM
TC = 148 °C, f = 20 kHz, d = 50 %
Peak repetitive forward current
Operating junction and storage temperatures
TJ, TStg
A
30
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
VBR,
VR
Forward voltage
VF
Reverse leakage current
IR
Junction capacitance
Series inductance
Document Number: 93236
Revision: 15-Apr-11
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 15 A
-
0.99
1.05
IF = 15 A, TJ = 150 °C
-
0.85
0.92
IR = 100 μA
UNITS
V
VR = VR rated
-
-
10
TJ = 150 °C, VR = VR rated
-
-
120
CT
VR = 600 V
-
11
-
pF
LS
Measured lead to lead 5 mm from package body
-
8
-
nH
μA
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-15AWL06FN-E3
Vishay Semiconductors
Ultralow VF Ultrafast Rectifier, 15 A FRED Pt®
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
-
60
120
IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V
-
190
-
TJ = 25 °C
-
220
-
-
290
-
-
21
-
-
25
-
TJ = 25 °C
-
2.6
-
TJ = 125 °C
-
4
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
- 65
-
175
°C
Thermal resistance,
junction to case per leg
RthJC
-
1.4
1.8
Thermal resistance,
junction to ambient per leg
RthJA
-
-
70
Reverse recovery time
trr
TJ = 125 °C
Peak recovery current
Reverse recovery charge
IRRM
Qrr
TJ = 25 °C
TJ = 125 °C
IF = 15 A
dIF/dt = 200 A/μs
VR = 390 V
ns
A
μC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
SYMBOL
TEST CONDITIONS
°C/W
Approximate weight
Marking device
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2
Case style D-PAK (TO-252AA)
0.3
g
0.01
oz.
15AWL06FN
For technical questions within your region, please contact one of the following:
Document Number: 93236
[email protected], [email protected], [email protected]
Revision: 15-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-15AWL06FN-E3
Vishay Semiconductors
100
100
TJ = 175 °C
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
Ultralow VF Ultrafast Rectifier, 15 A FRED Pt®
TJ = 175 °C
10
TJ = 125 °C
1
TJ = 25 °C
0.1
0.2
TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
0.1
TJ = 75 °C
TJ = 50 °C
0.01
TJ = 25 °C
0.001
0.0001
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
1.8
VF - Forward Voltage Drop (V)
93236_01
10
100
200
300
400
500
600
VR - Reverse Voltage (V)
93236_02
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
100
10
1
0
93236_03
100
200
300
400
500
600
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
Single pulse
(thermal resistance)
0.01
0.00001
93236_04
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 93236
Revision: 15-Apr-11
For technical questions within your region, please contact one of the following:
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3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-15AWL06FN-E3
Ultralow VF Ultrafast Rectifier, 15 A FRED Pt®
180
450
400
170
350
DC
160
300
trr (ns)
Allowable Case Temperature (°C)
Vishay Semiconductors
150
140
250
200
100
50
See note (1)
120
0
5
10
15
20
0
100
25
IF(AV) - Average Forward Current (A)
93236_05
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
5000
20
4500
15
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
10
5
5
10
15
3500
3000
2500
IF = 15 A, TJ = 25 °C
2000
0
0
IF = 15 A, TJ = 125 °C
4000
RMS limit
Qrr (nC)
Average Power Loss (W)
1000
dIF/dt (A/μs)
93236_07
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
93236_06
IF = 15 A, TJ = 25 °C
150
Square wave (D = 0.50)
Rated VR applied
130
IF = 15 A, TJ = 125 °C
20
25
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
1500
100
93236_08
1000
dIF/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
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For technical questions within your region, please contact one of the following:
Document Number: 93236
[email protected], [email protected], [email protected]
Revision: 15-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-15AWL06FN-E3
Ultralow VF Ultrafast Rectifier, 15 A FRED Pt®
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 93236
Revision: 15-Apr-11
For technical questions within your region, please contact one of the following:
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5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VS-15AWL06FN-E3
Ultralow VF Ultrafast Rectifier, 15 A FRED Pt®
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
15
A
W
L
06
FN
TR
-E3
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductor product
2
-
Current rating (15 = 15 A)
3
-
Circuit configuration:
A = Single diode (2 anodes)
4
-
Package identifier:
W = D-PAK
5
-
L = Hyperfast rectifier
6
-
Voltage rating (06 = 600 V)
7
-
FN = TO-252AA
8
-
9
-
TR = Tape and reel
Environmental digit:
-E3 = RoHS compliant and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-15AWL06FNTR-E3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
2000
2000
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95016
Part marking information
www.vishay.com/doc?95176
Packaging information (TR only)
www.vishay.com/doc?95033
SPICE model
www.vishay.com/doc?95372
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For technical questions within your region, please contact one of the following:
Document Number: 93236
[email protected], [email protected], [email protected]
Revision: 15-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay High Power Products
D-PAK (TO-252AA)
DIMENSIONS in millimeters and inches
(5)
A
E
b3
Pad layout
C
A
(3)
0.010 M C A B
c2
A
L3 (3)
Ø1
4
Ø2
4
B
Seating
plane
H
D (5)
1
2
0.245
MIN.
(6.23)
D1
L4
3
3
(2) L5
2
b
1
A
c
b2
0.06
MIN.
(1.524)
0.010 M C A B
2x e
0.093 (2.38)
0.085 (2.18)
(L1)
Detail “C”
Rotated 90 °CW
Scale: 20:1
H (7)
Lead tip
C
Gauge
plane
L2
MILLIMETERS
MIN.
0.488 (12.40)
0.409 (10.40)
0.089
MIN.
(2.28)
Detail “C”
SYMBOL
0.265
MIN.
(6.74)
E1
INCHES
MAX.
MIN.
MAX.
C Seating
plane
C
Ø
L
NOTES
A1
SYMBOL
MILLIMETERS
MIN.
MAX.
MAX.
A
2.18
2.39
0.086
0.094
e
A1
-
0.13
-
0.005
H
9.40
10.41
0.370
0.410
b
0.64
0.89
0.025
0.035
L
1.40
1.78
0.055
0.070
b2
0.76
1.14
0.030
0.045
L1
3
2.29 BSC
INCHES
MIN.
2.74 BSC
L2
0.51 BSC
NOTES
0.090 BSC
0.108 REF.
b3
4.95
5.46
0.195
0.215
c
0.46
0.61
0.018
0.024
L3
0.89
1.27
0.035
0.020 BSC
0.050
c2
0.46
0.89
0.018
0.035
L4
-
1.02
-
0.040
D
5.97
6.22
0.235
0.245
5
L5
1.14
1.52
0.045
0.060
D1
5.21
-
0.205
-
3
Ø
0°
10°
0°
10°
E
6.35
6.73
0.250
0.265
5
Ø1
0°
15°
0°
15°
E1
4.32
-
0.170
-
3
Ø2
25°
35°
25°
35°
3
2
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
(2)
Lead dimension uncontrolled in L5
(3)
Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4)
Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5)
Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6)
Dimension b1 and c1 applied to base metal only
(7)
Datum A and B to be determined at datum plane H
(8)
Outline conforms to JEDEC outline TO-252AA
Document Number: 95016
Revision: 04-Nov-08
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For technical questions concerning module products, contact: [email protected]
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Disclaimer
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000