New Product VS-15AWL06FN-E3 Vishay Semiconductors Ultralow VF Ultrafast Rectifier, 15 A FRED Pt® FEATURES • Ultrafast recovery time, extremely low VF and soft recovery Base cathode 4, 2 • 175 °C maximum operating junction temperature • For PFC DCM operation • Low leakage current D-PAK (TO-252AA) 1 Anode 3 Anode • Compliant to RoHS Directive 2002/95/EC • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DESCRIPTION/APPLICATIONS PRODUCT SUMMARY Package D-PAK (TO-252AA) IF(AV) 15 A VR 600 V VF at IF 1.05 V trr (typ.) 60 ns TJ max. 175 °C Diode variation Single die State of the art, ultralow VF, soft-switching hyperfast rectifiers optimized for Discontinuous (Critical) Mode (DCM) Power Factor Correction (PFC). The minimized conduction loss, optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. The device is also intended for use as a freewheeling diode in power supplies and other power switching applications. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 148 °C 15 Non-repetitive peak surge current IFSM TJ = 25 °C 180 IFM TC = 148 °C, f = 20 kHz, d = 50 % Peak repetitive forward current Operating junction and storage temperatures TJ, TStg A 30 - 65 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage VF Reverse leakage current IR Junction capacitance Series inductance Document Number: 93236 Revision: 15-Apr-11 TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 15 A - 0.99 1.05 IF = 15 A, TJ = 150 °C - 0.85 0.92 IR = 100 μA UNITS V VR = VR rated - - 10 TJ = 150 °C, VR = VR rated - - 120 CT VR = 600 V - 11 - pF LS Measured lead to lead 5 mm from package body - 8 - nH μA For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-15AWL06FN-E3 Vishay Semiconductors Ultralow VF Ultrafast Rectifier, 15 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 60 120 IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V - 190 - TJ = 25 °C - 220 - - 290 - - 21 - - 25 - TJ = 25 °C - 2.6 - TJ = 125 °C - 4 - MIN. TYP. MAX. UNITS TJ, TStg - 65 - 175 °C Thermal resistance, junction to case per leg RthJC - 1.4 1.8 Thermal resistance, junction to ambient per leg RthJA - - 70 Reverse recovery time trr TJ = 125 °C Peak recovery current Reverse recovery charge IRRM Qrr TJ = 25 °C TJ = 125 °C IF = 15 A dIF/dt = 200 A/μs VR = 390 V ns A μC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TEST CONDITIONS °C/W Approximate weight Marking device www.vishay.com 2 Case style D-PAK (TO-252AA) 0.3 g 0.01 oz. 15AWL06FN For technical questions within your region, please contact one of the following: Document Number: 93236 [email protected], [email protected], [email protected] Revision: 15-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-15AWL06FN-E3 Vishay Semiconductors 100 100 TJ = 175 °C IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Ultralow VF Ultrafast Rectifier, 15 A FRED Pt® TJ = 175 °C 10 TJ = 125 °C 1 TJ = 25 °C 0.1 0.2 TJ = 150 °C TJ = 125 °C 1 TJ = 100 °C 0.1 TJ = 75 °C TJ = 50 °C 0.01 TJ = 25 °C 0.001 0.0001 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.8 VF - Forward Voltage Drop (V) 93236_01 10 100 200 300 400 500 600 VR - Reverse Voltage (V) 93236_02 Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 100 10 1 0 93236_03 100 200 300 400 500 600 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 Single pulse (thermal resistance) 0.01 0.00001 93236_04 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 93236 Revision: 15-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-15AWL06FN-E3 Ultralow VF Ultrafast Rectifier, 15 A FRED Pt® 180 450 400 170 350 DC 160 300 trr (ns) Allowable Case Temperature (°C) Vishay Semiconductors 150 140 250 200 100 50 See note (1) 120 0 5 10 15 20 0 100 25 IF(AV) - Average Forward Current (A) 93236_05 Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 5000 20 4500 15 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 10 5 5 10 15 3500 3000 2500 IF = 15 A, TJ = 25 °C 2000 0 0 IF = 15 A, TJ = 125 °C 4000 RMS limit Qrr (nC) Average Power Loss (W) 1000 dIF/dt (A/μs) 93236_07 Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 93236_06 IF = 15 A, TJ = 25 °C 150 Square wave (D = 0.50) Rated VR applied 130 IF = 15 A, TJ = 125 °C 20 25 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics 1500 100 93236_08 1000 dIF/dt (A/μs) Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 93236 [email protected], [email protected], [email protected] Revision: 15-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-15AWL06FN-E3 Ultralow VF Ultrafast Rectifier, 15 A FRED Pt® Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 93236 Revision: 15-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-15AWL06FN-E3 Ultralow VF Ultrafast Rectifier, 15 A FRED Pt® Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 15 A W L 06 FN TR -E3 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductor product 2 - Current rating (15 = 15 A) 3 - Circuit configuration: A = Single diode (2 anodes) 4 - Package identifier: W = D-PAK 5 - L = Hyperfast rectifier 6 - Voltage rating (06 = 600 V) 7 - FN = TO-252AA 8 - 9 - TR = Tape and reel Environmental digit: -E3 = RoHS compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-15AWL06FNTR-E3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 2000 2000 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95016 Part marking information www.vishay.com/doc?95176 Packaging information (TR only) www.vishay.com/doc?95033 SPICE model www.vishay.com/doc?95372 www.vishay.com 6 For technical questions within your region, please contact one of the following: Document Number: 93236 [email protected], [email protected], [email protected] Revision: 15-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay High Power Products D-PAK (TO-252AA) DIMENSIONS in millimeters and inches (5) A E b3 Pad layout C A (3) 0.010 M C A B c2 A L3 (3) Ø1 4 Ø2 4 B Seating plane H D (5) 1 2 0.245 MIN. (6.23) D1 L4 3 3 (2) L5 2 b 1 A c b2 0.06 MIN. (1.524) 0.010 M C A B 2x e 0.093 (2.38) 0.085 (2.18) (L1) Detail “C” Rotated 90 °CW Scale: 20:1 H (7) Lead tip C Gauge plane L2 MILLIMETERS MIN. 0.488 (12.40) 0.409 (10.40) 0.089 MIN. (2.28) Detail “C” SYMBOL 0.265 MIN. (6.74) E1 INCHES MAX. MIN. MAX. C Seating plane C Ø L NOTES A1 SYMBOL MILLIMETERS MIN. MAX. MAX. A 2.18 2.39 0.086 0.094 e A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 L1 3 2.29 BSC INCHES MIN. 2.74 BSC L2 0.51 BSC NOTES 0.090 BSC 0.108 REF. b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.020 BSC 0.050 c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040 D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10° E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15° E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35° 3 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension uncontrolled in L5 (3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad (4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip (5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (6) Dimension b1 and c1 applied to base metal only (7) Datum A and B to be determined at datum plane H (8) Outline conforms to JEDEC outline TO-252AA Document Number: 95016 Revision: 04-Nov-08 For technical questions concerning discrete products, contact: [email protected] For technical questions concerning module products, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000