PN2222, PN2222A General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol PN2222 PN2222A PN2222 PN2222A PN2222 PN2222A VCEO VCBO VEBO Collector Current − Continuous IC Total Device Dissipation @ TA = 25°C Derate above 25°C PD Total Device Dissipation @ TC = 25°C Derate above 25°C PD Value Vdc 30 40 Vdc 5.0 6.0 mAdc 625 5.0 mW mW/°C 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 °C/W Thermal Resistance, Junction-to-Case RqJC 83.3 °C/W TO−92 CASE 29 STYLE 1 12 1 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic 1 EMITTER Vdc 60 75 600 Operating and Storage Junction Temperature Range 2 BASE Unit Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. PN 2222 YWW G G PN2 222A YWW G G PN2222 PN2222A Y WW G = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 February, 2010 − Rev. 5 1 Publication Order Number: PN2222/D PN2222, PN2222A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) PN2222 PN2222A V(BR)CEO 30 40 − − Vdc Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) PN2222 PN2222A V(BR)CBO 60 75 − − Vdc Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) PN2222 PN2222A V(BR)EBO 5.0 6.0 − − Vdc Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) PN2222A − 10 Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 125°C) (VCB = 50 Vdc, IE = 0, TA = 125°C) PN2222 PN2222A PN2222 PN2222A − − − − 0.01 0.01 10 10 Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) PN2222A − 100 Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) PN2222A − 20 35 50 75 35 100 50 30 40 − − − − 300 − − − − − − − 0.4 0.3 1.6 1.0 − 0.6 − − 1.3 1.2 2.6 2.0 250 300 − − − 8.0 − − 30 25 2.0 0.25 8.0 1.25 − − 8.0 4.0 50 75 300 375 ICEX ICBO IEBO IBL nAdc mAdc nAdc nAdc ON CHARACTERISTICS hFE DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C) (IC = 150 mAdc, VCE = 10 Vdc) (Note 1) (IC = 150 mAdc, VCE = 1.0 Vdc) (Note 1) (IC = 500 mAdc, VCE = 10 Vdc) (Note 1) PN2222A only PN2222 PN2222A Collector −Emitter Saturation Voltage (Note 1) (IC = 150 mAdc, IB = 15 mAdc) PN2222 PN2222A PN2222 PN2222A (IC = 500 mAdc, IB = 50 mAdc) Base −Emitter Saturation Voltage (Note 1) (IC = 150 mAdc, IB = 15 mAdc) PN2222 PN2222A PN2222 PN2222A (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) VBE(sat) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Note 2) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) PN2222 PN2222A Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) fT Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) PN2222 PN2222A Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) PN2222A PN2222A Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) PN2222A PN2222A Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) PN2222A PN2222A 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. http://onsemi.com 2 Cibo hie hre hfe MHz pF pF kW X 10− 4 − PN2222, PN2222A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Characteristic Min Max 5.0 25 35 200 − 150 − 4.0 Unit SMALL−SIGNAL CHARACTERISTICS Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) PN2222A PN2222A Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) PN2222A Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz) PN2222A hoe rb′Cc mMhos ps NF dB SWITCHING CHARACTERISTICS (PN2222A only) Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc, VBE(off) = −0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) td − 10 ns tr − 25 ns (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) (Figure 2) ts − 225 ns tf − 60 ns ORDERING INFORMATION Package Shipping† PN2222G TO−92 (Pb−Free) 5000 Units / Bulk PN2222AG TO−92 (Pb−Free) 5000 Units / Bulk TO−92 2000 / Tape & Reel TO−92 (Pb−Free) 2000 / Tape & Reel TO−92 2000 / Tape & Ammo Box PN2222ARLRMG TO−92 (Pb−Free) 2000 / Tape & Ammo Box PN2222ARLRPG TO−92 (Pb−Free) 2000 / Tape & Ammo Box Device PN2222ARLRA PN2222ARLRAG PN2222ARLRM †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% +16 V 0 -2 V 200 +16 V 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% 200 0 1 kW < 2 ns 1k -14 V CS* < 10 pF < 20 ns 1N914 -4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn−On Time Figure 2. Turn−Off Time http://onsemi.com 3 CS* < 10 pF PN2222, PN2222A hFE , DC CURRENT GAIN 1000 700 500 TJ = 125°C 300 200 25°C 100 70 50 -55°C 30 VCE = 1.0 V VCE = 10 V 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 700 1.0 k VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain 1.0 TJ = 25°C 0.8 0.6 IC = 1.0 mA 10 mA 150 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 10 20 30 50 Figure 4. Collector Saturation Region 200 500 IC/IB = 10 TJ = 25°C 300 tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 t, TIME (ns) t, TIME (ns) 100 70 50 20 10 7.0 5.0 t′s = ts - 1/8 tf 100 70 50 tf 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 200 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 500 Figure 5. Turn −On Time 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 6. Turn −Off Time http://onsemi.com 4 300 500 PN2222, PN2222A 10 10 6.0 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 150 W 500 mA, RS = 200 W 100 mA, RS = 2.0 kW 50 mA, RS = 4.0 kW 8.0 NF, NOISE FIGURE (dB) RS = OPTIMUM RS = SOURCE RS = RESISTANCE 4.0 2.0 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k Figure 7. Frequency Effects Figure 8. Source Resistance Effects 10 7.0 5.0 Ccb 3.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) RS, SOURCE RESISTANCE (OHMS) Ceb 0.2 0.3 100 200 f, FREQUENCY (kHz) 20 2.0 0.1 0 50 50 100 20 30 CAPACITANCE (pF) IC = 50 mA 100 mA 500 mA 1.0 mA 500 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 Figure 9. Capacitances 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 10. Current−Gain Bandwidth Product 1.0 +0.5 TJ = 25°C 0 COEFFICIENT (mV/ °C) V, VOLTAGE (VOLTS) 0.8 VBE(sat) @ IC/IB = 10 1.0 V 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 RqVC for VCE(sat) -0.5 -1.0 -1.5 RqVB for VBE -2.0 VCE(sat) @ IC/IB = 10 0 -2.5 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 1.0 k 0.1 0.2 Figure 11. “On” Voltages 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 12. Temperature Coefficients http://onsemi.com 5 500 PN2222, PN2222A PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X N 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N A R BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K D X X J V 1 C N SECTION X−X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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