2N4401 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO 60 Vdc Emitter − Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2 BASE 1 EMITTER TO−92 CASE 29 STYLE 1 1 12 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM 2N 4401 AYWW G G 2N4401 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 February, 2010 − Rev. 4 1 Publication Order Number: 2N4401/D 2N4401 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 60 − Vdc (IE = 0.1 mAdc, IC = 0) Emitter−Base Breakdown Voltage V(BR)EBO 6.0 − Vdc Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV − 0.1 mAdc Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX − 0.1 mAdc 20 40 80 100 40 − − − 300 − ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) − − 0.4 0.75 Vdc Base−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) 0.75 − 0.95 1.2 Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT 250 − MHz Collector−Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb − 6.5 pF Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb − 30 pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 1.0 15 kW Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10−4 Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 40 500 − Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 30 mmhos (VCC = 30 Vdc, VBE = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td − 15 ns tr − 20 ns (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts − 225 ns tf − 30 ns SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. ORDERING INFORMATION Package Shipping† TO−92 5000 Units / Bulk TO−92 (Pb−Free) 5000 Units / Bulk TO−92 2000 / Tape & Reel 2N4401RLRAG TO−92 (Pb−Free) 2000 / Tape & Reel 2N4401RLRMG TO−92 (Pb−Free) 2000 / Tape & Ammo Box TO−92 2000 / Tape & Ammo Box TO−92 (Pb−Free) 2000 / Tape & Ammo Box Device 2N4401 2N4401G 2N4401RLRA 2N4401RLRP 2N4401RLRPG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 2N4401 SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% +16 V 0 -2.0 V 200 W 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% +16 V 200 W 0 1.0 kW < 2.0 ns 1.0 kW -14 V CS* < 10 pF CS* < 10 pF < 20 ns -4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn−On Time Figure 2. Turn−Off Time TRANSIENT CHARACTERISTICS 25°C 100°C 30 10 7.0 5.0 10 7.0 5.0 QT 2.0 1.0 0.7 0.5 0.3 0.2 Ccb 3.0 2.0 0.1 VCC = 30 V IC/IB = 10 3.0 Cobo Q, CHARGE (nC) CAPACITANCE (pF) 20 QA 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 3. Capacitances 500 Figure 4. Charge Data 100 100 IC/IB = 10 70 VCC = 30 V IC/IB = 10 70 tr 50 50 tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0 30 20 t, TIME (ns) t, TIME (ns) 300 30 tf 20 10 10 7.0 7.0 5.0 5.0 10 20 30 50 70 100 200 300 10 500 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn−On Time Figure 6. Rise and Fall Times http://onsemi.com 3 300 500 2N4401 300 100 ts′ = ts - 1/8 tf IB1 = IB2 IC/IB = 10 to 20 VCC = 30 V IB1 = IB2 70 50 t f , FALL TIME (ns) t s′, STORAGE TIME (ns) 200 100 70 IC/IB = 20 30 20 IC/IB = 10 10 50 7.0 30 5.0 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time 300 500 SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz 10 f = 1.0 kHz RS = OPTIMUM RS = SOURCE RS = RESISTANCE 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8.0 10 IC = 1.0 mA, RS = 150 W IC = 500 mA, RS = 200 W IC = 100 mA, RS = 2.0 kW IC = 50 mA, RS = 4.0 kW 6.0 4.0 2.0 IC = 50 mA IC = 100 mA IC = 500 mA IC = 1.0 mA 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 f, FREQUENCY (kHz) 0 10 20 50 100 50 Figure 9. Frequency Effects 100 200 500 1.0k 2.0k 5.0k 10k 20k RS, SOURCE RESISTANCE (OHMS) 50k 100k Figure 10. Source Resistance Effects http://onsemi.com 4 2N4401 h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain these curves, a high−gain and a low−gain unit were selected from the 2N4401 lines, and the same units were used to develop the correspondingly numbered curves on each graph. 50k hfe , CURRENT GAIN 200 100 70 2N4401 UNIT 1 2N4401 UNIT 2 50 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 20k 10k 5.0k 2.0k 1.0k 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. Current Gain Figure 12. Input Impedance 10 5.0 7.0 10 100 7.0 5.0 2N4401 UNIT 1 2N4401 UNIT 2 3.0 2.0 1.0 0.7 0.5 0.3 0.2 2N4401 UNIT 1 2N4401 UNIT 2 500 5.0 7.0 10 hoe , OUTPUT ADMITTANCE (m mhos) h re , VOLTAGE FEEDBACK RATIO (X 10-4 ) 20 hie , INPUT IMPEDANCE (OHMS) 300 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 50 20 10 5.0 2N4401 UNIT 1 2N4401 UNIT 2 2.0 1.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance http://onsemi.com 5 5.0 7.0 10 2N4401 STATIC CHARACTERISTICS h FE , NORMALIZED CURRENT GAIN 3.0 VCE = 1.0 V VCE = 10 V 2.0 TJ = 125°C 1.0 25°C 0.7 0.5 -55°C 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 TJ = 25°C 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 16. Collector Saturation Region 1.0 +0.5 TJ = 25°C VBE(sat) @ IC/IB = 10 0.6 0 COEFFICIENT (mV/ °C) VOLTAGE (VOLTS) 0.8 VBE @ VCE = 10 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) -0.5 -1.0 -1.5 -2.0 0 0.1 0.2 qVC for VCE(sat) 100 200 -2.5 0.1 0.2 500 Figure 17. “On” Voltages qVB for VBE 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 Figure 18. Temperature Coefficients http://onsemi.com 6 500 2N4401 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X N 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N A R BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K D X X J V 1 C N SECTION X−X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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