MJD47, MJD50 High Voltage Power Transistors DPAK For Surface Mount Applications D e s i g n e d f o r l i n e o p e r a t e d a u d i o o u t p u t a m p l i f i e r, SWITCHMODE t power supply drivers and other switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • • • • • • (No Suffix) Electrically Similar to Popular TIP47, and TIP50 250 and 400 V (Min) − VCEO(sus) 1 A Rated Collector Current Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V These are Pb−Free Packages http://onsemi.com NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS, 15 WATTS 4 1 2 DPAK CASE 369C STYLE 1 MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Symbol MJD47 MJD50 MJD47 MJD50 Emitter−Base Voltage VCEO VCB Max Unit Vdc 250 400 5 Vdc IC 1 2 Adc Base Current IB 0.6 mAdc Total Power Dissipation @ TC = 25°C Derate above 25°C PD Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD Operating and Storage Junction Temperature Range − Continuous − Peak MARKING DIAGRAM Vdc 350 500 VEB Collector Current 3 W 15 0.12 W/°C AYWW JxxG A Y WW Jxx G = Assembly Location = Year = Work Week = Device Code xx = 47 or 50 = Pb−Free Package W 1.56 0.0125 W/°C TJ, Tstg −65 to +150 °C Symbol Max Unit Thermal Resistance Junction−to−Case RqJC 8.33 °C/W Thermal Resistance Junction−to−Ambient (Note 1) RqJA 80 °C/W Lead Temperature for Soldering Purpose TL 260 °C ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. THERMAL CHARACTERISTICS Characteristic Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. © Semiconductor Components Industries, LLC, 2011 January, 2011 − Rev. 10 1 Publication Order Number: MJD47/D MJD47, MJD50 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 250 400 − Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) MJD47 MJD50 (IC = 30 mAdc, IB = 0) Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 300 Vdc, IB = 0) MJD47 MJD50 Collector Cutoff Current (VCE = 350 Vdc, VBE = 0) (VCE = 500 Vdc, VBE = 0) MJD47 MJD50 Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) VCEO(sus) ICEO − mAdc − 0.2 0.2 − − 0.1 0.1 − 1 30 10 150 − − ICES IEBO Vdc mAdc mAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.3 Adc, VCE = 10 Vdc) (IC = 1 Adc, VCE = 10 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = 1 Adc, IB = 0.2 Adc) VCE(sat) − 1 Vdc Base−Emitter On Voltage (IC = 1 Adc, VCE = 10 Vdc) VBE(on) − 1.5 Vdc Current Gain — Bandwidth Product (IC = 0.2 Adc, VCE = 10 Vdc, f = 2 MHz) fT 10 − MHz Small−Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1 kHz) hfe 25 − − DYNAMIC CHARACTERISTICS 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. TYPICAL CHARACTERISTICS PD, POWER DISSIPATION (WATTS) TA TC 2.5 25 TURN-ON PULSE APPROX +11 V 2 20 Vin 0 VEB(off) 1.5 15 1 10 0.5 5 0 0 50 t3 APPROX +11 V 75 100 125 TURN-OFF PULSE T, TEMPERATURE (°C) Figure 1. Power Derating RB Cjd << Ceb -4 V t1 ≤ 7 ns 10 < t2 < 500 ms t3 < 15 ns t2 150 SCOPE Vin 51 Vin 25 RC t1 TA (SURFACE MOUNT) TC VCC DUTY CYCLE ≈ 2% APPROX -9 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. Figure 2. Switching Time Equivalent Circuit http://onsemi.com 2 MJD47, MJD50 1.4 200 VCE = 10 V 1.2 TJ = 150°C 60 40 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN 100 25°C 20 -55°C 10 1 VBE(sat) @ IC/IB = 5 0.8 VBE(on) @ VCE = 4 V 0.6 TJ = 25°C 0.4 6 4 0.2 2 0.02 0.2 0.4 0.6 0.04 0.06 0.1 IC, COLLECTOR CURRENT (AMPS) 2 1 0 0.02 VCE(sat) @ IC/IB = 5 0.1 0.2 0.4 0.6 0.04 0.06 IC, COLLECTOR CURRENT (AMPS) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 3. DC Current Gain 1 0.7 0.5 1 2 Figure 4. “On” Voltages D = 0.5 0.3 0.2 0.2 0.1 RqJC(t) = r(t) RqJC RqJC = 8.33°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.05 0.1 0.07 0.05 0.02 0.01 0.03 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 20 30 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1k Figure 5. Thermal Response IC, COLLECTOR CURRENT (AMP) 5 2 1ms 1 0.5 TC ≤ 25°C 500ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100ms dc 0.2 0.1 SECOND BREAKDOWN LIMIT THERMAL LIMIT @ 25°C WIRE BOND LIMIT MJD47 CURVES APPLY BELOW MJD50 RATED VCEO 0.05 0.02 0.01 0.005 5 10 20 50 100 200 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 Figure 6. Active Region Safe Operating Area http://onsemi.com 3 MJD47, MJD50 5 1 TJ = 25°C VCC = 200 V IC/IB = 5 0.2 tr 0.1 td ts 2 1 t, TIME (s) μ t, TIME (s) μ 0.5 0.05 tf 0.2 0.1 0.02 0.01 0.02 TJ = 25°C VCC = 200 V IC/IB = 5 0.5 0.05 0.1 0.2 0.5 IC, COLLECTOR CURRENT (AMPS) 1 0.05 0.02 2 Figure 7. Turn−On Time 0.05 0.1 0.2 0.5 IC, COLLECTOR CURRENT (AMPS) 1 2 Figure 8. Turn-Off Time ORDERING INFORMATION Package Shipping† MJD47G 369C (Pb−Free) 75 Units / Rail MJD47T4G 369C (Pb−Free) 2500 / Tape & Reel MJD50G 369C (Pb−Free) 75 Units / Rail MJD50T4G 369C (Pb−Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 MJD47, MJD50 PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 3.0 0.118 1.6 0.063 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SWITCHMODE is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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