ONSEMI 2N6491

2N6487, 2N6488, (NPN)
2N6490, 2N6491 (PNP)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications.
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Features
15 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80 VOLTS, 75 WATTS
• DC Current Gain Specified to 15 Amperes −
•
•
•
•
hFE = 20 −150 @ IC = 5.0 Adc
= 5.0 (Min) @ IC = 15 Adc
Collector−Emitter Sustaining Voltage −
VCEO(sus) = 60 Vdc (Min) − 2N6487, 2N6490
= 80 Vdc (Min) − 2N6488, 2N6491
High Current Gain − Bandwidth Product
fT = 5.0 MHz (Min) @ IC = 1.0 Adc
TO−220AB Compact Package
Pb−Free Packages are Available*
MARKING
DIAGRAM
4
MAXIMUM RATINGS (Note 1)
Symbol
Rating
Collector−Emitter Voltage
Collector−Base Voltage
2N6487, 2N6490
2N6488, 2N6491
2N6487, 2N6490
2N6488, 2N6491
Emitter−Base Voltage
VCEO
VCB
Value
TO−220AB
CASE 221A
STYLE 1
Unit
Vdc
60
80
Vdc
70
90
1
2
2N64xxG
AYWW
3
2N64xx
xx
G
A
Y
WW
= Specific Device Code
= See Table on Page 5
= Pb−Free Package
= Assembly Location
= Year
= Work Week
VEB
5.0
Vdc
Collector Current − Continuous
IC
15
Adc
Base Current
IB
5.0
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD
75
0.6
W
W/°C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
PD
1.8
0.014
W
W/°C
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 5 of this data sheet.
Operating and Storage Junction
Temperature Range
TJ, Tstg
−65 to +150
°C
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.67
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
70
_C/W
THERMAL CHARACTERISTICS
Characteristics
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 14
1
Publication Order Number:
2N6487/D
PD, POWER DISSIPATION (WATTS)
2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)
TA
4.0
TC
80
3.0
60
TC
2.0
40
TA
1.0
20
0
0
0
20
40
60
80
100
120
140
160
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
Characteristic
Symbol
Min
Max
60
80
−
−
70
90
−
−
−
−
1.0
1.0
−
−
−
−
500
500
5.0
5.0
−
1.0
20
5.0
150
−
−
−
1.3
3.5
−
−
1.3
3.5
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 200 mAdc, IB = 0)
2N6487, 2N6490
2N6488, 2N6491
Collector−Emitter Sustaining Voltage (Note)
(IC = 200 mAdc, VBE = 1.5 Vdc)
2N6487, 2N6490
2N6488, 2N6491
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
2N6487, 2N6490
2N6488, 2N6491
Collector Cutoff Current
(VCE = 65 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 85 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N6487, 2N6490
2N6488, 2N6491
2N6487, 2N6490
2N6488, 2N6491
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
VCEO(sus)
VCEX
ICEO
ICEX
IEBO
Vdc
Vdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 Adc, VCE = 4.0 Vdc)
(IC = 15 Adc, VCE = 4.0 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 0.5 Adc)
(IC = 15 Adc, IB = 5.0 Adc)
VCE(sat)
Base−Emitter On Voltage
(IC = 5.0 Adc, VCE = 4.0 Vdc)
(IC = 15 Adc, VCE = 4.0 Vdc)
VBE(on)
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4)
(IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 MHz)
fT
5.0
−
MHz
Small−Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
25
−
−
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. fT = |hfe| • ftest
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2
2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)
VCC
+ 30 V
25 ms
RC
+ 10 V
SCOPE
RB
0
- 10 V
51
tr, tf v 10 ns
DUTY CYCLE = 1.0%
D1
-4V
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
FOR PNP, REVERSE ALL POLARITIES.
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
Figure 2. Switching Time Test Circuit
1000
500
tr
t, TIME (ns)
200
100
TC = 25°C
VCC = 30 V
IC/IB = 10
20
10
td @ VBE(off) [ 5.0 V
NPN
PNP
50
0.2
0.5
1.0
5.0
2.0
IC, COLLECTOR CURRENT (AMP)
10
20
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 3. Turn−On Time
1.0
0.7
0.5
0.3
D = 0.5
0.2
0.2
0.1
0.1
0.07
0.05
P(pk)
ZqJC (t) = r(t) RqJC
RqJC = 1.67°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
0.05
0.02
0.03
0.02
0.01
0.01
0.01
0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
t, TIME (ms)
Figure 4. Thermal Response
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3
20
50
t1
t2
DUTY CYCLE, D = t1/t2
100
200
500 1.0 k
2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)
There are two limitations on the power handling ability of
a transistors average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown
IC, COLLECTOR CURRENT (AMP)
20
10
100 ms
5.0
500 ms
1.0 ms
2.0
TJ = 150°C
1.0
0.5
CURVES APPLY BELOW RATED VCEO
2N6487, 2N6490
2N6488, 2N6491
0.2
0.1
5.0 ms
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
2.0
dc
40 60
4.0
10
20
80
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active−Region Safe Operating Area
5000
1000
700
C, CAPACITANCE (pF)
ts
t, TIME (ns)
1000
500
tf
NPN
PNP
200
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
100
50
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMP)
Cob
300
Cib
200
Cob
100
NPN
PNP
TJ = 25°C
70
10
50
20
0.5
1.0
Figure 6. Turn−Off Time
2.0
5.0
10
20
VR, REVERSE VOLTAGE (VOLTS)
50
Figure 7. Capacitances
NPN
2N6487, 2N6488
PNP
2N6490, 2N6491
500
500
TJ = 150°C
100
-55°C
50
20
VCE = 2.0 V
10
5.0
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMP)
TJ = 150°C
200
25°C
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
200
25°C
100
-55°C
50
20
10
10
5.0
20
VCE = 2.0 V
0.2
Figure 8. DC Current Gain
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4
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMP)
10
20
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)
2.0
TJ = 25°C
1.8
1.6
1.4
1.2
1.0
IC = 1.0 A
0.8
4.0 A
8.0 A
0.6
0.4
0.2
0
5.0
20
10
50 100
200 500 1000
IB, BASE CURRENT (mA)
2000 5000
2.0
TJ = 25°C
1.8
1.6
1.4
1.2
IC = 1.0 A
1.0
4.0 A
8.0 A
0.8
0.6
0.4
0.2
0
5.0
20
10
50 100
200 500 1000
IB, BASE CURRENT (mA)
2000 5000
Figure 9. Collector Saturation Region
2.8
2.8
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.0
1.6
1.2
VBE(sat) = IC/IB = 10
0.8
2.0
1.6
1.2
VBE(sat) @ IC/IB = 10
0.8
VBE @ VCE = 2.0 V
0.4
TJ = 25°C
2.4
TJ = 25°C
2.4
VBE @ VCE = 2.0 V
0.4
VCE(sat) @ IC/IB = 10
0
VCE(sat) @ IC/IB = 10
0
0.2
0.5
1.0
2.0
5.0
10
0.2
20
IC, COLLECTOR CURRENT (AMP)
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
ORDERING INFORMATION
Device
Device Marking
Package
2N6487
2N6487G
TO−220AB
2N6487
TO−220AB
(Pb−Free)
2N6488
2N6488G
TO−220AB
(Pb−Free)
50 Units / Rail
TO−220AB
2N6490
TO−220AB
(Pb−Free)
2N6491
2N6491G
50 Units / Rail
TO−220AB
2N6488
2N6490
2N6490G
Shipping
50 Units / Rail
TO−220AB
2N6491
TO−220AB
(Pb−Free)
http://onsemi.com
5
50 Units / Rail
10
20
2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
−T−
B
F
SEATING
PLANE
C
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.036
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.91
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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