1SMA5.0AT3 Series 400 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* http://onsemi.com The SMA series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMA series is supplied in ON Semiconductor’s exclusive, cost-effective, highly reliable Surmetict package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. CATHODE Features • • • • • • • • • PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 5.0 − 78 V, 400 W PEAK POWER Working Peak Reverse Voltage Range − 5.0 V to 78 V Standard Zener Breakdown Voltage Range − 6.7 V to 91.25 V Peak Power − 400 W @ 1 ms ESD Rating of Class 3 (> 16 kV) per Human Body Model Response Time is Typically < 1 ns Flat Handling Surface for Accurate Placement Package Design for Top Slide or Bottom Circuit Board Mounting Low Profile Package Pb−Free Packages are Available ANODE SMA CASE 403D STYLE 1 MARKING DIAGRAM xx AYWWG Mechanical Characteristics: CASE: Void-free, transfer-molded plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds POLARITY: Cathode indicated by molded polarity notch or polarity band xx A Y WW G = Device Code (Refer to page 3) = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION MOUNTING POSITION: Any Device 1SMAxxAT3 1SMAxxAT3G Package Shipping† SMA 5000/Tape & Reel SMA (Pb−Free) 5000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2010 May, 2010 − Rev. 11 1 Publication Order Number: 1SMA5.0AT3/D 1SMA5.0AT3 Series MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms PPK 400 W DC Power Dissipation @ TL = 75°C Measured Zero Lead Length (Note 2) Derate Above 75°C Thermal Resistance from Junction to Lead PD 1.5 W RqJL 20 50 mW/°C °C/W W mW/°C °C/W DC Power Dissipation (Note 3) @ TA = 25°C Derate Above 25°C Thermal Resistance from Junction to Ambient PD RqJA 0.5 4.0 250 Forward Surge Current (Note 4) @ TA = 25°C IFSM 40 A TJ, Tstg −65 to +150 °C Operating and Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 10 X 1000 ms, non−repetitive. 2. 1″ square copper pad, FR−4 board. 3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec. 4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. ELECTRICAL CHARACTERISTICS (TA = 25°C unless I otherwise noted, VF = 3.5 V Max. @ IF = 30 A for all types) (Note 5) Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IF Parameter VC VBR VRWM Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM IR VF IT Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF IPP Uni−Directional TVS 5. 1/2 sine wave or equivalent, PW = 8.3 ms, non−repetitive duty cycle. http://onsemi.com 2 V 1SMA5.0AT3 Series ELECTRICAL CHARACTERISTICS VRWM (Note 6) IR @ VRWM VC @ IPP (Note 8) Breakdown Voltage VBR (Volts) (Note 7) @ IT VC IPP C Typ. (Note 9) Device Device Marking Volts mA Min Nom Max mA Volts Amps pF 1SMA5.0AT3, G 1SMA6.0AT3, G 1SMA6.5AT3, G 1SMA7.0AT3, G QE QG QK QM 5.0 6.0 6.5 7.0 400 400 250 250 6.4 6.67 7.22 7.78 6.7 7.02 7.6 8.19 7.0 7.37 7.98 8.6 10 10 10 10 9.2 10.3 11.2 12.0 43.5 38.8 35.7 33.3 2035 1730 1605 1505 1SMA7.5AT3, G 1SMA8.0AT3, G 1SMA8.5AT3, G 1SMA9.0AT3, G QP QR QT QV 7.5 8.0 8.5 9.0 50 25 5.0 2.5 8.33 8.89 9.44 10 8.77 9.36 9.92 10.55 9.21 9.83 10.4 11.1 1 1 1 1 12.9 13.6 14.4 15.4 31.0 29.4 27.8 26.0 1415 1035 1265 1200 1SMA10AT3, G 1SMA11AT3, G 1SMA12AT3, G 1SMA13AT3, G QX QZ RE RG 10 11 12 13 2.5 2.5 2.5 2.5 11.1 12.2 13.3 14.4 11.7 12.85 14.0 15.15 12.3 13.5 14.7 15.9 1 1 1 1 17.0 18.2 19.9 21.5 23.5 22.0 20.1 18.6 1090 1000 925 860 1SMA15AT3, G 1SMA16AT3, G 1SMA17AT3, G RM RP RR 15 16 17 2.5 2.5 2.5 16.7 17.8 18.9 17.6 18.75 19.9 18.5 19.7 20.9 1 1 1 24.4 26.0 27.6 16.4 15.4 14.5 758 715 680 1SMA18AT3, G 1SMA20AT3, G 1SMA22AT3, G 1SMA24AT3, G RT RV RX RZ 18 20 22 24 2.5 2.5 2.5 2.5 20 22.2 24.4 26.7 21.05 23.35 25.65 28.1 22.1 24.5 26.9 29.5 1 1 1 1 29.2 32.4 35.5 38.9 13.7 12.3 11.3 10.3 645 585 540 500 1SMA26AT3, G 1SMA28AT3, G 1SMA30AT3, G 1SMA33AT3, G SE SG SK SM 26 28 30 33 2.5 2.5 2.5 2.5 28.9 31.1 33.3 36.7 30.4 32.75 35.05 38.65 31.9 34.4 36.8 40.6 1 1 1 1 42.1 45.4 48.4 53.3 9.5 8.8 8.3 7.5 460 430 405 375 1SMA36AT3, G 1SMA40AT3, G 1SMA43AT3, G 1SMA45AT3, G SP SR ST SV 36 40 43 45 2.5 2.5 2.5 2.5 40 44.4 47.8 50 42.1 46.75 50.3 52.65 44.2 49.1 52.8 55.3 1 1 1 1 58.1 64.5 69.4 72.2 6.9 6.2 5.8 5.5 345 315 295 280 1SMA48AT3, G 1SMA51AT3, G 1SMA54AT3, G 1SMA58AT3, G SX SZ TE TG 48 51 54 58 2.5 2.5 2.5 2.5 53.3 56.7 60 64.4 56.1 59.7 63.15 67.8 58.9 62.7 66.3 71.5 1 1 1 1 77.4 82.4 87.1 93.6 5.2 4.9 4.6 4.3 265 250 240 225 1SMA64AT3, G 1SMA70AT3, G 1SMA75AT3, G TM TP TR 64 70 75 2.5 2.5 2.5 71.1 77.8 83.3 74.85 81.9 87.7 78.6 86.0 92.1 1 1 1 103 113 121 3.9 3.5 3.3 205 190 180 6. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than the DC or continuous peak operating voltage level. 7. VBR measured at pulse test current IT at an ambient temperature of 25°C. 8. Surge current waveform per Figure 2 and derate per Figure 3. 9. Bias voltage = 0 V, F = 1.0 MHz, TJ = 25°C. †Please see 1SMA10CAT3 to 1SMA75CAT3 for Bidirectional devices. * The “G” suffix indicates Pb−Free package available. http://onsemi.com 3 1SMA5.0AT3 Series RATING AND TYPICAL CHARACTERISTIC CURVES 120 NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 2. TA = 25°C 10 Ippm, PEAK PULSE CURRENT (%) Ppk , PEAK POWER (kW) 100 1 0.1 10-4 100 0.01 0.1 tP, PULSE WIDTH (ms) 1 PEAK VALUE Ippm 80 60 HALF VALUE - Ipp/2 40 10/1000 ms WAVEFORM AS DEFINED BY R.E.A. 20 0 0.001 10 td 0 1 2 3 5 4 t, TIME (ms) Figure 1. Pulse Rating Curve Figure 2. Pulse Waveform 120 10,000 10 x 1000 WAVEFORM AS DEFINED BY R.E.A. TJ = 25°C F = 1 MHz 1SMA5.0AT3G C, CAPACITANCE (pF) 100 80 60 40 1,000 1SMA10AT3G 1SMA36AT3G 100 1SMA64AT3G 10 20 0 1 0 40 80 120 160 TA, AMBIENT TEMPERATURE (°C) 200 1 Figure 3. Pulse Derating Curve PD , MAXIMUM POWER DISSIPATION (WATTS) PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT TA = 25°C PW (ID) IS DEFINED AS THE POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF Ipp. ≤ 10 ms 10 BIAS VOLTAGE (VOLTS) Figure 4. Typical Junction Capacitance vs. Bias Voltage 6 5 4 @ TL = 75°C PD = 1.5 W 3 2 @ TA = 25°C PD = 0.5 W 1 0 0 25 50 100 75 T, TEMPERATURE (°C) 125 Figure 5. Steady State Power Derating http://onsemi.com 4 150 100 1SMA5.0AT3 Series PACKAGE DIMENSIONS SMA CASE 403D−02 ISSUE F HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02. E b DIM A A1 b c D E HE L D POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) MIN 1.97 0.05 1.27 0.15 2.29 4.06 4.83 0.76 MILLIMETERS NOM MAX 2.10 2.20 0.10 0.15 1.45 1.63 0.28 0.41 2.60 2.92 4.32 4.57 5.21 5.59 1.14 1.52 MIN 0.078 0.002 0.050 0.006 0.090 0.160 0.190 0.030 INCHES NOM 0.083 0.004 0.057 0.011 0.103 0.170 0.205 0.045 MAX 0.087 0.006 0.064 0.016 0.115 0.180 0.220 0.060 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE A L c A1 SOLDERING FOOTPRINT* 4.0 0.157 2.0 0.0787 2.0 0.0787 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SURMETIC is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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