NCP583 Ultra−Low Iq 150 mA CMOS LDO Regulator with Enable The NCP583 series of low dropout regulators are designed for portable battery powered applications which require precise output voltage accuracy and low quiescent current. These devices feature an enable function which lowers current consumption significantly and are offered in two small packages; SC−82AB and the SOT−563. A 1.0 mF ceramic capacitor is the recommended value to be used with these devices on the output pin. http://onsemi.com MARKING DIAGRAMS Features • • • Ultra−Low Dropout Voltage of 250 mV at 150 mA Excellent Line Regulation of 0.05%/V Excellent Load Regulation of 20 mV High Output Voltage Accuracy of "2% Ultra−Low Iq Current of 1.0 mA Very Low Shutdown Current of 0.1 mA Wide Output Voltage Range of 1.5 V to 3.3 V Low Temperature Drift Coefficient on the Output Voltage of "100 ppm/°C Fold Back Protection Circuit Input Voltage up to 6.5 V These are Pb−Free Devices Typical Applications SC−82AB SQ SUFFIX CASE 419C 4 M • • • • • • • • 1 1 SOT−563 XV SUFFIX CASE 463A 6 xxx M G G xxx M G G 1 1 xxx = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. • Portable Equipment • Hand−Held Instrumentation • Camcorders and Cameras ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Vin Vout − + Vref Current Limit CE GND Figure 1. Simplified Block Diagram © Semiconductor Components Industries, LLC, 2006 April, 2006 − Rev. 5 1 Publication Order Number: NCP583/D NCP583 PIN FUNCTION DESCRIPTION SOT−563 Pin SC−82AB Pin Symbol 1 4 Vin 2 2 GND Power supply ground. 3 3 Vout Regulated output voltage. 4 − NC No connect. 5 − GND 6 1 CE Description Power supply input voltage. Power supply ground. Chip enable pin. MAXIMUM RATINGS Rating Symbol Value Unit Input Voltage Vin 6.5 V Input Voltage (CE or CE Pin) VCE 6.5 V Output Voltage Vout −0.3 to Vin +0.3 V Output Current Iout 180 mA Power Dissipation SC−82AB SOT−563 PD Operating Junction Temperature Range TJ −40 to +85 °C Tstg +150 °C mW 150 500 Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (Vin = Vout + 1.0 V, TA = 25°C, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Input Voltage Vin 1.7 − 6.0 V Output Voltage (1.0 mA ≤ Iout ≤ 30 mA) Vout Vout X 0.980 − Vout X 1.020 V Line Regulation (Iout = 30 mA) (Vout + 0.5 V v Vin v 6.0 V) Regline − 0.05 0.20 %/V Load Regulation (1.0 mA ≤ Iout ≤ 100 mA) Regload − 20 40 mV − − − − 0.60 0.50 0.35 0.25 0.90 0.75 0.55 0.40 Dropout Voltage (Iout = 150 mA) Vout = 1.5 V Vout = 1.8 V Vout = 2.5 V 2.8 V v Vout v 3.3 V VDO Quiescent Current (Iout = 0 mA) Iq − 1.0 1.5 mA Output Current Iout 150 − − mA Shutdown Current (VCE = Gnd) ISD − 0.1 1.0 mA Output Short Circuit Current (Vout = 0) Ilim − 40 − mA Vthenh Vthenl 1.2 0 − − 6.0 0.3 Enable Input Threshold Voltage High Low V V http://onsemi.com 2 NCP583 TYPICAL CHARACTERISTICS 2.9 2.8 2.5 Vin = 3.1 V OUTPUT VOLTAGE Vout (V) OUTPUT VOLTAGE Vout (V) 3.0 2.0 3.3 V 3.5 V 1.5 1.0 0.5 Vout = 2.8 V 0 0 100 300 200 400 2.7 2.6 2.5 2.4 Iout = 1.0 mA 2.3 Iout = 30 mA 2.2 Iout = 50 mA 2.1 2.0 1.0 500 Vout = 2.8 V 2.0 OUTPUT CURRENT Iout (mA) 5.0 6.0 Figure 3. Output Voltage vs. Input Voltage 1.2 2.86 1.0 OUTPUT VOLTAGE, Vout (V) QUIESCENT CURRENT, Iq (mA) 4.0 INPUT VOLTAGE Vin (V) Figure 2. Output Voltage vs. Output Current 0.8 0.6 0.4 0.2 2.84 2.82 2.80 2.78 2.76 Vout = 2.8 V 0.0 0 1.0 2.0 4.0 3.0 5.0 Vout = 2.8 V 2.74 −40 6.0 −15 INPUT VOLTAGE Vin (V) 10 35 60 85 TEMPERATURE (°C) Figure 5. Output Voltage vs. Temperature Figure 4. Quiescent Current vs. Input Voltage 1.4 QUIESCENT CURRENT, Iq (mA) 1.4 QUIESCENT CURRENT, Iq (mA) 3.0 1.2 1.0 0.8 0.6 0.4 0.2 Vout = 1.5 V 0.0 −40 −15 10 35 60 1.2 1.0 0.8 0.6 0.4 0.2 Vout = 2.8 V 0.0 −40 85 TEMPERATURE (°C) −15 10 35 60 TEMPERATURE (°C) Figure 6. Quiescent Current vs. Temperature Figure 7. Quiescent Current vs. Temperature http://onsemi.com 3 85 NCP583 TYPICAL CHARACTERISTICS 0.40 Vout = 1.5 V 0.9 85°C 0.35 DROPOUT VOLTAGE, VDO (V) DROPOUT VOLTAGE, VDO (V) 1.0 0.8 0.30 25°C 0.7 85°C 25°C 0.25 0.6 −40°C 0.5 0.20 0.4 0.15 0.3 −40°C 0.10 0.2 0.05 0.1 Vout = 1.8 V 0.0 0 25 50 75 100 0.00 0 150 125 25 OUTPUT CURRENT Iout (mA) 100 125 150 Figure 9. Dropout Voltage vs. Output Current 0.40 70 RIPPLE REJECTION, RR (dB) 0.35 0.30 0.25 85°C 25°C 0.20 0.15 −40°C 0.10 0.05 Vout = 2.8 V 25 50 75 100 125 Vout = 2.8 V Vin = 3.8 V + 0.5 Vp−p Cout = 0.1 mF 60 50 40 30 Iout = 1.0 mA 20 Iout = 30 mA 10 Iout = 50 mA 0 0.1 150 10 1 OUTPUT CURRENT Iout (mA) FREQUENCY, f (kHz) Figure 11. Ripple Rejection vs. Frequency Figure 10. Dropout Voltage vs. Output Current 70 RIPPLE REJECTION, RR (dB) DROPOUT VOLTAGE, VDO (V) 75 OUTPUT CURRENT Iout (mA) Figure 8. Dropout Voltage vs. Output Current 0.00 0 50 Vout = 2.8 V Vin = 3.8 V + 0.5 Vp−p Cout = 1.0 mF 60 50 40 30 Iout = 1.0 mA 20 Iout = 30 mA 10 Iout = 50 mA 0 0.1 10 1 100 FREQUENCY, f (kHz) Figure 12. Ripple Rejection vs. Frequency http://onsemi.com 4 100 NCP583 TYPICAL CHARACTERISTICS Cout = 0.1 mF 6 5 5.0 Input Voltage 4.5 4 4.0 3 3.5 2 Output Voltage 3.0 1 INPUT VOLTAGE, Vin (V) OUTPUT VOLTAGE, Vout (V) 5.5 0 2.5 2.0 0 20 40 60 80 100 120 140 160 180 −1 200 TIME, T (ms) Cout = 0.47 mF 6 5 5.0 Input Voltage 4.5 4 4.0 3 3.5 2 Output Voltage 3.0 1 INPUT VOLTAGE, Vin (V) OUTPUT VOLTAGE, Vout (V) 5.5 0 2.5 2.0 0 20 40 60 80 100 120 140 160 180 −1 200 TIME, T (ms) Cout = 1.0 mF 6 5 5.0 Input Voltage 4.5 4 4.0 3 3.5 2 Output Voltage 3.0 1 0 2.5 2.0 0 20 40 60 80 100 120 140 160 TIME, T (ms) Figure 13. Input Transient Response (Vout = 2.8 V, Iout = 30 mA, tr = tf = 5.0 ms, Cin = 0) http://onsemi.com 5 180 −1 200 INPUT VOLTAGE, Vin (V) OUTPUT VOLTAGE, Vout (V) 5.5 NCP583 TYPICAL CHARACTERISTICS Cout = 1.0 mF 20 4.5 10 Output Current 4.0 0 3.5 −10 Output Voltage 3.0 2.5 OUTPUT CURRENT, Iout (mA) OUTPUT VOLTAGE, Vout (V) 5.0 2.0 0 100 200 300 400 500 600 700 800 900 1000 TIME, T (ms) Cout = 10 mF 20 4.5 10 Output Current 4.0 0 3.5 −10 Output Voltage 3.0 2.5 2.0 0 100 200 300 400 500 600 700 800 TIME, T (ms) Figure 14. Load Transient Response (Vout = 2.8 V, tr = tf = 5.0 ms, Vin = 3.8 V) http://onsemi.com 6 900 1000 OUTPUT CURRENT, Iout (mA) OUTPUT VOLTAGE, Vout (V) 5.0 NCP583 TYPICAL CHARACTERISTICS Cout = 0.1 mF 150 4.5 100 Output Current 4.0 50 3.5 0 Output Voltage 3.0 2.5 OUTPUT CURRENT, Iout (mA) OUTPUT VOLTAGE, Vout (V) 5.0 2.0 0 20 40 60 80 100 120 140 160 180 200 TIME, T (ms) Cout = 0.47 mF 150 4.5 100 Output Current 4.0 50 3.5 0 Output Voltage 3.0 2.5 OUTPUT CURRENT, Iout (mA) OUTPUT VOLTAGE, Vout (V) 5.0 2.0 0 20 40 60 80 100 120 140 160 180 200 TIME, T (ms) Cout = 1.0 mF 150 4.5 100 Output Current 4.0 50 3.5 0 Output Voltage 3.0 2.5 2.0 0 20 40 60 80 100 120 140 160 TIME, T (ms) Figure 15. Load Transient Response (Vout = 2.8 V, tr = tf = 5.0 ms, Vin = 3.8 V) http://onsemi.com 7 180 200 OUTPUT CURRENT, Iout (mA) OUTPUT VOLTAGE, Vout (V) 5.0 NCP583 APPLICATION INFORMATION Input Decoupling Output Decoupling A 1.0 mF ceramic capacitor is the recommended value to be connected between Vin and GND. For PCB layout considerations, the traces of Vin and GND should be sufficiently wide in order to minimize noise and prevent unstable operation. It is recommended to use a 0.1 mF ceramic capacitor on the Vout pin. For better performance, select a capacitor with low Equivalent Series Resistance (ESR). For PCB layout considerations, place the output capacitor close to the output pin and keep the leads short as possible. ORDERING INFORMATION Device Output Type / Features Nominal Output Voltage Marking Package Shipping† NCP583SQ15T1G Active High w/Enable 1.5 A5 SC−82AB (Pb−Free) 3000 Tape & Reel NCP583SQ18T1G Active High w/Enable 1.8 A8 SC−82AB (Pb−Free) 3000 Tape & Reel NCP583SQ25T1G Active High w/Enable 2.5 B5 SC−82AB (Pb−Free) 3000 Tape & Reel NCP583SQ28T1G Active High w/Enable 2.8 B8 SC−82AB (Pb−Free) 3000 Tape & Reel NCP583SQ30T1G Active High w/Enable 3.0 C0 SC−82AB (Pb−Free) 3000 Tape & Reel NCP583SQ33T1G Active High w/Enable 3.3 C3 SC−82AB (Pb−Free) 3000 Tape & Reel NCP583XV15T2G Active High w/Enable 1.5 G15B SOT−563 (Pb−Free) 4000 Tape & Reel NCP583XV18T2G Active High w/Enable 1.8 G18B SOT−563 (Pb−Free) 4000 Tape & Reel NCP583XV25T2G Active High w/Enable 2.5 G25B SOT−563 (Pb−Free) 4000 Tape & Reel NCP583XV28T2G Active High w/Enable 2.8 G28B SOT−563 (Pb−Free) 4000 Tape & Reel NCP583XV29T2G Active High w/Enable 2.9 G29B SOT−563 (Pb−Free) 4000 Tape & Reel NCP583XV30T2G Active High w/Enable 3.0 G30B SOT−563 (Pb−Free) 4000 Tape & Reel NCP583XV33T2G Active High w/Enable 3.3 G33B SOT−563 (Pb−Free) 4000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Other voltages are available. Consult your ON Semiconductor representative. http://onsemi.com 8 NCP583 PACKAGE DIMENSIONS SOT−563 XV SUFFIX CASE 463A−01 ISSUE F D −X− 6 5 1 2 A L 4 E −Y− 3 b e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A b C D E e L HE HE C 5 PL 6 0.08 (0.003) M X Y MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 9 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 NCP583 PACKAGE DIMENSIONS SC−82AB SQ SUFFIX CASE 419C−02 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. 419C−01 OBSOLETE. NEW STANDARD IS 419C−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. A G C D 3 PL N DIM A B C D F G H J K L N S 3 4 K B S 1 2 F L H J 0.05 (0.002) MILLIMETERS MIN MAX 1.8 2.2 1.15 1.35 0.8 1.1 0.2 0.4 0.3 0.5 1.1 1.5 0.0 0.1 0.10 0.26 0.1 −−− 0.05 BSC 0.2 REF 1.8 2.4 INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.008 0.016 0.012 0.020 0.043 0.059 0.000 0.004 0.004 0.010 0.004 −−− 0.002 BSC 0.008 REF 0.07 0.09 SOLDERING FOOTPRINT* 1.30 0.512 0.65 0.026 1.90 0.95 0.075 0.037 0.90 0.035 0.70 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 10 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NCP583/D