MC74VHCU04 Hex Inverter (Unbuffered) The MC74VHCU04 is an advanced high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V systems to 3.0 V systems. http://onsemi.com MARKING DIAGRAMS Features • • • • • • • • • • • • 14 High Speed: tPD = 3.5 ns (Typ) at VCC = 5.0 V Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C High Noise Immunity: VNIH = VNIL = 10% VCC (Min.) Power Down Protection Provided on Inputs Balanced Propagation Delays Designed for 2.0 V to 5.5 V Operating Range Low Noise: VOLP = 0.8 V (Max) Pin and Function Compatible with Other Standard Logic Families Latchup Performance Exceeds 300 mA ESD Performance: Human Body Model > 2000 V; Machine Model > 200 V Chip Complexity: 12 FETs or 3 Equivalent Gates Pb−Free Packages are Available* A1 A2 A3 1 2 3 4 5 6 9 8 Y1 A5 A6 11 10 13 12 1 VHCU04G AWLYWW 1 14 1 VHCU 04 ALYWG G TSSOP−14 DT SUFFIX CASE 948G 1 14 1 SOEIAJ−14 M SUFFIX CASE 965 VHCU04 ALYWG 1 A = Assembly Location WL, L = Wafer Lot Y, YY = Year WW, W = Work Week G or G = Pb−Free Package (Note: Microdot may be in either location) Y2 Y3 Y=A A4 SOIC−14 D SUFFIX CASE 751A FUNCTION TABLE Y4 Inputs Y5 Outputs A Y L H H L Y6 ORDERING INFORMATION Figure 1. Logic Diagram See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 4 1 Publication Order Number: MC74VHCU04/D MC74VHCU04 VCC A6 Y6 A5 Y5 A4 Y4 14 13 12 11 10 9 8 1 2 3 4 5 6 7 A1 Y1 A2 Y2 A3 Y3 GND (Top View) Figure 2. Pinout: 14−Lead Packages ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol Parameter VCC DC Supply Voltage Value Unit –0.5 to + 7.0 V Vin DC Input Voltage –0.5 to + 7.0 V Vout DC Output Voltage –0.5 to VCC + 0.5 V IIK Input Diode Current −20 mA IOK Output Diode Current ± 20 mA Iout DC Output Current, per Pin ± 25 mA ICC DC Supply Current, VCC and GND Pins ± 50 mA PD Power Dissipation in Still Air, 500 450 mW Tstg Storage Temperature – 65 to + 150 _C SOIC Packages† TSSOP Package† Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. †Derating — SOIC Packages: – 7 mW/_C from 65_ to 125_C TSSOP Package: − 6.1 mW/_C from 65_ to 125_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit 2.0 5.5 V VCC DC Supply Voltage Vin DC Input Voltage 0 5.5 V Vout DC Output Voltage 0 VCC V −40 + 85 _C TA Operating Temperature http://onsemi.com 2 This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND v (Vin or Vout) v VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V CC ). Unused outputs must be left open. MC74VHCU04 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions TA = 25°C VCC V Min 1.70 VCC x 0.8 VIH Minimum High−Level Input Voltage 2.0 3.0 to 5.5 VIL Maximum Low−Level Input Voltage 2.0 3.0 to 5.5 VOH Minimum High−Level Output Voltage VOL Maximum Low−Level Output Voltage TA = −40 to 85°C Typ Max Min 0.30 VCC x 0.2 Vin =VIL IOH = −50mA 2.0 3.0 4.5 1.8 2.7 4.0 Vin = GND IOH = −4mA IOH = −8mA 3.0 4.5 2.58 3.94 Vin = VIH IOL = 50mA 2.0 3.0 4.5 Vin = VCC IOL = 4mA IOL = 8mA Max 1.70 VCC x 0.8 V 0.30 VCC x 0.2 2.0 3.0 4.5 Unit V V 1.8 2.7 4.0 2.48 3.80 0.0 0.0 0.0 0.2 0.3 0.5 0.2 0.3 0.5 3.0 4.5 0.36 0.36 0.44 0.44 V Iin Maximum Input Leakage Current Vin = 5.5 or GND 0 to 5.5 ± 0.1 ± 1.0 mA ICC Maximum Quiescent Supply Current Vin = VCC or GND 5.5 2.0 20.0 mA AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns) TA = 25°C Symbol Parameter tPLH, tPHL Maximum Propagation Delay, A or B to Y Cin Test Conditions Min TA = −40 to 85°C Typ Max Min Max Unit ns VCC = 3.3 ± 0.3V CL = 15pF CL = 50pF 5.0 7.5 8.9 11.4 1.0 1.0 10.5 13.0 VCC = 5.0 ± 0.5V CL = 15pF CL = 50pF 3.5 5.0 5.5 7.0 1.0 1.0 6.5 8.0 5 10 Maximum Input Capacitance 10 pF Typical @ 25°C, VCC = 5.0V CPD 9 Power Dissipation Capacitance (Per Inverter) (Note 1) pF 1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 6 (per buffer). CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50pF, VCC = 5.0V) TA = 25°C Symbol Characteristic Typ Max Unit VOLP Quiet Output Maximum Dynamic VOL 0.5 0.8 V VOLV Quiet Output Minimum Dynamic VOL −0.5 −0.8 V VIHD Minimum High Level Dynamic Input Voltage 4.0 V VILD Maximum Low Level Dynamic Input Voltage 1.0 V http://onsemi.com 3 MC74VHCU04 TEST POINT A VCC OUTPUT 50% DEVICE UNDER TEST GND tPLH Y tPHL CL* 50% VCC *Includes all probe and jig capacitance Figure 3. Switching Waveforms Figure 4. Test Circuit Parasitic Diode INPUT OUTPUT Parasitic Diode Figure 5. Input Equivalent Circuit ORDERING INFORMATION Package Shipping† MC74VHCU04DR2 SOIC−14 2500 Tape & Reel MC74VHCU04DR2G SOIC−14 (Pb−Free) 2500 Tape & Reel MC74VHCU04DTR2 TSSOP−14* 2500 Tape & Reel MC74VHCU04DTR2G TSSOP−14* 2500 Tape & Reel MC74VHCU04MEL SOEIAJ−14 2000 Tape & Reel MC74VHCU04MELG SOEIAJ−14 (Pb−Free) 2000 Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. http://onsemi.com 4 MC74VHCU04 PACKAGE DIMENSIONS SOIC−14 D SUFFIX CASE 751A−03 ISSUE G −A− 14 8 −B− P 7 PL 0.25 (0.010) B M M 7 1 G −T− D 14 PL 0.25 (0.010) SEATING PLANE T B A S DIM A B C D F G J K M P R J M K M F R X 45 _ C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. S MILLIMETERS MIN MAX 8.55 8.75 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.337 0.344 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.228 0.244 0.010 0.019 TSSOP−14 DT SUFFIX CASE 948G−01 ISSUE A 14X K REF 0.10 (0.004) 0.15 (0.006) T U M T U V S S S N 2X 14 L/2 0.25 (0.010) 8 M B −U− L PIN 1 IDENT. N F 7 1 0.15 (0.006) T U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. S DETAIL E K A −V− ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ ÇÇÇ ÉÉÉ K1 J J1 SECTION N−N −W− C 0.10 (0.004) −T− SEATING PLANE D G H DETAIL E http://onsemi.com 5 DIM A B C D F G H J J1 K K1 L M MILLIMETERS INCHES MIN MAX MIN MAX 4.90 5.10 0.193 0.200 4.30 4.50 0.169 0.177 −−− 1.20 −−− 0.047 0.05 0.15 0.002 0.006 0.50 0.75 0.020 0.030 0.65 BSC 0.026 BSC 0.50 0.60 0.020 0.024 0.09 0.20 0.004 0.008 0.09 0.16 0.004 0.006 0.19 0.30 0.007 0.012 0.19 0.25 0.007 0.010 6.40 BSC 0.252 BSC 0_ 8_ 0_ 8_ MC74VHCU04 PACKAGE DIMENSIONS SOEIAJ−14 M SUFFIX CASE 965−01 ISSUE A 14 LE 8 Q1 E HE L 7 1 M_ DETAIL P Z D VIEW P A e DIM A A1 b c D E e HE 0.50 LE M Q1 Z A1 b 0.13 (0.005) c M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS AND ARE MEASURED AT THE PARTING LINE. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 5. THE LEAD WIDTH DIMENSION (b) DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE LEAD WIDTH DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. MINIMUM SPACE BETWEEN PROTRUSIONS AND ADJACENT LEAD TO BE 0.46 ( 0.018). 0.10 (0.004) MILLIMETERS MIN MAX −−− 2.05 0.05 0.20 0.35 0.50 0.10 0.20 9.90 10.50 5.10 5.45 1.27 BSC 7.40 8.20 0.50 0.85 1.10 1.50 10 _ 0_ 0.70 0.90 −−− 1.42 INCHES MIN MAX −−− 0.081 0.002 0.008 0.014 0.020 0.004 0.008 0.390 0.413 0.201 0.215 0.050 BSC 0.291 0.323 0.020 0.033 0.043 0.059 10 _ 0_ 0.028 0.035 −−− 0.056 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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