MC74VHC08 Quad 2−Input AND Gate The MC74VHC08 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V systems to 3.0 V systems. http://onsemi.com MARKING DIAGRAMS Features • • • • • • • • • • • • High Speed: tPD = 4.3 ns (Typ) at VCC = 5.0 V Low Power Dissipation: ICC = 2.0 mA (Max) at TA = 25°C High Noise Immunity: VNIH = VNIL = 28% VCC Power Down Protection Provided on Inputs Balanced Propagation Delays Designed for 2.0 V to 5.5 V Operating Range Low Noise: VOLP = 0.8 V (Max) Pin and Function Compatible with Other Standard Logic Families Latchup Performance Exceeds 300 mA ESD Performance: Human Body Model > 2000 V; Machine Model > 200 V Chip Complexity: 24 FETs or 6 Equivalent Gates Pb−Free Packages are Available* A1 B1 A2 B2 A3 B3 A4 B4 1 3 2 4 6 5 8 10 VHC08G AWLYWW 1 14 VHC 08 ALYW TSSOP DT SUFFIX CASE 948G 1 14 SOEIAJ−14 M SUFFIX CASE 965 Y1 74VHC08 ALYWG 1 A WL, L Y WW, W G or Y2 Y = AB 9 14 SOIC−14 D SUFFIX CASE 751A Y3 = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) 12 11 13 Y4 FUNCTION TABLE Inputs Figure 1. Logic Diagram VCC B4 A4 Y4 B3 A3 Y3 14 13 12 11 10 9 8 Output A B Y L L H H L H L H L L L H ORDERING INFORMATION 1 2 3 5 6 7 A1 B1 Y1 A2 B2 (Top View) 4 Y2 GND See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Figure 2. Pinout: 14−Lead Packages *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 November, 2005 − Rev. 6 1 Publication Order Number: MC74VHC08/D MC74VHC08 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Symbol Parameter VCC DC Supply Voltage Value Unit –0.5 to +7.0 V Vin DC Input Voltage –0.5 to +7.0 V Vout DC Output Voltage –0.5 to VCC +0.5 V IIK Input Diode Current −20 mA IOK Output Diode Current ±20 mA Iout DC Output Current, per Pin ±25 mA ICC DC Supply Current, VCC and GND Pins ±50 mA 500 450 mW –65 to +150 C PD Power Dissipation in Still Air, Tstg Storage Temperature Packages† SOIC TSSOP Package† This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND v (Vin or Vout) v VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V CC ). Unused outputs must be left open. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. †Derating — SOIC Packages: – 7 mW/C from 65 to 125C TSSOP Package: − 6.1 mW/C from 65 to 125C ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ RECOMMENDED OPERATING CONDITIONS Symbol Parameter VCC DC Supply Voltage Vin DC Input Voltage Vout DC Output Voltage TA Operating Temperature tr, tf Input Rise and Fall Time Min Max Unit 2.0 5.5 V 0 5.5 V 0 VCC V −40 +85 C 0 0 100 20 ns/V VCC = 3.3 V ±0.3 V VCC = 5.0 V ±0.5 V DC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions Min 1.50 VCC x 0.7 VIH Minimum High−Level Input Voltage 2.0 3.0 to 5.5 VIL Maximum Low−Level Input Voltage 2.0 3.0 to 5.5 VOH Minimum High−Level Output Voltage Vin = VIH or VIL IOH = −50 mA Vin = VIH or VIL IOH = −4.0 mA IOH = −8.0 mA VOL Maximum Low−Level Output Voltage Vin = VIH or VIL IOL = 50 mA TA = 25°C VCC V Max Min 2.0 3.0 4.5 1.9 2.9 4.4 3.0 4.5 2.58 3.94 Max 1.50 VCC x 0.7 0.50 VCC x 0.3 2.0 3.0 4.5 Vin = VIH or VIL IOL = 4.0 mA IOL = 8.0 mA Typ TA = − 40 to 85°C 2.0 3.0 4.5 Unit V 0.50 VCC x 0.3 V V 1.9 2.9 4.4 2.48 3.80 0.0 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 3.0 4.5 0.36 0.36 0.44 0.44 V Iin Maximum Input Leakage Current Vin = 5.5 V or GND 0 to 5.5 ± 0.1 ± 1.0 mA ICC Maximum Quiescent Supply Current Vin = VCC or GND 5.5 2.0 20.0 mA http://onsemi.com 2 MC74VHC08 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) TA = 25°C Symbol tPLH, tPHL Cin Maximum Propagation Delay, A or B to Y Min Max Unit CL = 15 pF CL = 50 pF 6.2 8.7 8.8 12.3 1.0 1.0 10.5 14.0 ns VCC = 5.0 ± 0.5 V CL = 15 pF CL = 50 pF 4.3 5.8 5.9 7.9 1.0 1.0 7.0 9.0 4 10 Test Conditions Min TA = − 40 to 85°C VCC = 3.3 ± 0.3 V Parameter Maximum Input Capacitance Typ Max 10 pF Typical @ 25°C, VCC = 5.0 V CPD 18 Power Dissipation Capacitance (Note 1) pF 1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 4 (per gate). CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. NOISE CHARACTERISTICS (Input tr = tf = 3.0 ns, CL = 50 pF, VCC = 5.0 V) TA = 25°C Symbol Characteristic Typ Max Unit VOLP Quiet Output Maximum Dynamic VOL 0.3 0.8 V VOLV Quiet Output Minimum Dynamic VOL −0.3 −0.8 V VIHD Minimum High Level Dynamic Input Voltage 3.5 V VILD Maximum Low Level Dynamic Input Voltage 1.5 V TEST POINT VCC A or B 50% OUTPUT DEVICE UNDER TEST GND tPLH Y tPHL C L* 50% VCC *Includes all probe and jig capacitance Figure 3. Switching Waveforms Figure 4. Test Circuit INPUT Figure 5. Input Equivalent Circuit http://onsemi.com 3 MC74VHC08 ORDERING INFORMATION Package Shipping † MC74VHC08DR2 SOIC−14 2500 Units / Tape & Reel MC74VHC08DR2G SOIC−14 (Pb−Free) 2500 Units / Tape & Reel MC74VHC08DTR2 TSSOP−14* 2500 Units / Tape & Reel MC74VHC08DTR2G TSSOP−14* 2500 Units / Tape & Reel MC74VHC08MEL SOEIAJ−14 2000 Units / Tape & Reel MC74VHC08MELG SOEIAJ−14 (Pb−Free) 2000 Units / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. http://onsemi.com 4 MC74VHC08 PACKAGE DIMENSIONS SOIC−14 D SUFFIX CASE 751A−03 ISSUE G −A− 14 8 −B− P 7 PL 0.25 (0.010) M B M 7 1 G F R X 45 C −T− D 14 PL 0.25 (0.010) SEATING PLANE M T B A S DIM A B C D F G J K M P R J M K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. S MILLIMETERS MIN MAX 8.55 8.75 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0 7 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.337 0.344 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0 7 0.228 0.244 0.010 0.019 TSSOP−14 DT SUFFIX CASE 948G−01 ISSUE A 14X K REF 0.10 (0.004) 0.15 (0.006) T U M T U V S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. S S N 2X 14 L/2 0.25 (0.010) 8 M B −U− L PIN 1 IDENT. F 7 1 0.15 (0.006) T U N S DETAIL E K A −V− ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ K1 J J1 SECTION N−N −W− C 0.10 (0.004) −T− SEATING PLANE D G H DETAIL E http://onsemi.com 5 DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 −−− 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.50 0.60 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0 8 INCHES MIN MAX 0.193 0.200 0.169 0.177 −−− 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.020 0.024 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0 8 MC74VHC08 PACKAGE DIMENSIONS SOEIAJ−14 M SUFFIX CASE 965−01 ISSUE A 14 LE 8 Q1 E HE L 7 1 M DETAIL P Z D VIEW P A e c DIM A A1 b c D E e HE 0.50 LE M Q1 Z A1 b 0.13 (0.005) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS AND ARE MEASURED AT THE PARTING LINE. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 5. THE LEAD WIDTH DIMENSION (b) DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE LEAD WIDTH DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. MINIMUM SPACE BETWEEN PROTRUSIONS AND ADJACENT LEAD TO BE 0.46 ( 0.018). M 0.10 (0.004) MILLIMETERS MIN MAX −−− 2.05 0.05 0.20 0.35 0.50 0.10 0.20 9.90 10.50 5.10 5.45 1.27 BSC 7.40 8.20 0.50 0.85 1.10 1.50 10 0 0.70 0.90 −−− 1.42 INCHES MIN MAX −−− 0.081 0.002 0.008 0.014 0.020 0.004 0.008 0.390 0.413 0.201 0.215 0.050 BSC 0.291 0.323 0.020 0.033 0.043 0.059 0 10 0.028 0.035 −−− 0.056 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 6 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MC74VHC08/D