1.5KE6.8CA Series 1500 Watt Mosorb Zener Transient Voltage Suppressors Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are ON Semiconductor’s exclusive, cost-effective, highly reliable Surmetic axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/ consumer applications, to protect CMOS, MOS and Bipolar integrated circuits. http://onsemi.com Specification Features: • • • • • • • Working Peak Reverse Voltage Range – 5.8 V to 214 V Peak Power – 1500 Watts @ 1 ms ESD Rating of Class 3 (>16 KV) per Human Body Model Maximum Clamp Voltage @ Peak Pulse Current Low Leakage < 5 µA above 10 V UL 497B for Isolated Loop Circuit Protection Response Time is typically < 1 ns AXIAL LEAD CASE 41A PLASTIC L 1N6 xxxCA 1.5KE xxxCA YYWW Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230°C, 1/16″ from the case for 10 seconds POLARITY: Cathode band does not imply polarity MOUNTING POSITION: Any L = Assembly Location 1N6xxxCA = JEDEC Device Code 1.5KExxxCA = ON Device Code YY = Year WW = Work Week MAXIMUM RATINGS Symbol Value Unit Peak Power Dissipation (Note 1.) @ TL ≤ 25°C Rating PPK 1500 Watts Steady State Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8″ Derated above TL = 75°C PD 5.0 Watts 20 mW/°C RJL 20 °C/W TJ, Tstg – 65 to +175 °C Thermal Resistance, Junction–to–Lead Operating and Storage Temperature Range ORDERING INFORMATION Device Packaging 1.5KExxCA Axial Lead 1.5KExxCARL4 Axial Lead Shipping 500 Units/Box 1500/Tape & Reel 1. Nonrepetitive current pulse per Figure 4 and derated above TA = 25°C per Figure 2. *Please see 1N6267A to 1N6306A (1.5KE6.8A – 1.5KE250A) for Unidirectional Devices Semiconductor Components Industries, LLC, 2002 February, 2002 – Rev. 2 1 Publication Order Number: 1.5KE6.8CA/D 1.5KE6.8CA Series ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT VBR IPP IT VC VBR VRWM IR IR V RWM VBR VC IT Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT IPP Test Current Bi–Directional TVS Maximum Temperature Coefficient of VBR http://onsemi.com 2 V 1.5KE6.8CA Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Breakdown Voltage VRWM (Note 1) IR @ VRWM Device (Volts) (µA) Min Nom 1.5KE6.8CA 1.5KE7.5CA 1.5KE8.2CA 1.5KE9.1CA 5.8 6.4 7.02 7.78 1000 500 200 50 6.45 7.13 7.79 8.65 1.5KE10CA 1.5KE11CA 1.5KE12CA 1.5KE13CA 8.55 9.4 10.2 11.1 10 5 5 5 1.5KE15CA 1.5KE16CA 1.5KE18CA 1.5KE20CA 12.8 13.6 15.3 17.1 1.5KE22CA 1.5KE24CA 1.5KE27CA 1.5KE30CA VC @ IPP (Note 3) @ IT VC IPP VBR Max (mA) (Volts) (A) (%/°C) 6.8 7.5 8.2 9.1 7.14 7.88 8.61 9.55 10 10 10 1 10.5 11.3 12.1 13.4 143 132 124 112 0.057 0.061 0.065 0.068 9.5 10.5 11.4 12.4 10 11 12 13 10.5 11.6 12.6 13.7 1 1 1 1 14.5 15.6 16.7 18.2 103 96 90 82 0.073 0.075 0.078 0.081 5 5 5 5 14.3 15.2 17.1 19 15 16 18 20 15.8 16.8 18.9 21 1 1 1 1 21.2 22.5 25.2 27.7 71 67 59.5 54 0.084 0.086 0.088 0.09 18.8 20.5 23.1 25.6 5 5 5 5 20.9 22.8 25.7 28.5 22 24 27 30 23.1 25.2 28.4 31.5 1 1 1 1 30.6 33.2 37.5 41.4 49 45 40 36 0.092 0.094 0.096 0.097 1.5KE33CA 1.5KE36CA 1.5KE39CA 1.5KE43CA 28.2 30.8 33.3 36.8 5 5 5 5 31.4 34.2 37.1 40.9 33 36 39 43 34.7 37.8 41 45.2 1 1 1 1 45.7 49.9 53.9 59.3 33 30 28 25.3 0.098 0.099 0.1 0.101 1.5KE47CA 1.5KE51CA 1.5KE56CA 1.5KE62CA 40.2 43.6 47.8 53 5 5 5 5 44.7 48.5 53.2 58.9 47 51 56 62 49.4 53.6 58.8 65.1 1 1 1 1 64.8 70.1 77 85 23.2 21.4 19.5 17.7 0.101 0.102 0.103 0.104 1.5KE68CA 1.5KE75CA 1.5KE82CA 1.5KE91CA 58.1 64.1 70.1 77.8 5 5 5 5 64.6 71.3 77.9 86.5 68 75 82 91 71.4 78.8 86.1 95.5 1 1 1 1 92 103 113 125 16.3 14.6 13.3 12 0.104 0.105 0.105 0.106 1.5KE100CA 1.5KE110CA 1.5KE120CA 1.5KE130CA 85.5 94 102 111 5 5 5 5 95 105 114 124 100 110 120 130 105 116 126 137 1 1 1 1 137 152 165 179 11 9.9 9.1 8.4 0.106 0.107 0.107 0.107 1.5KE150CA 1.5KE160CA 1.5KE170CA 1.5KE180CA 128 136 145 154 5 5 5 5 143 152 162 171 150 160 170 180 158 168 179 189 1 1 1 1 207 219 234 246 7.2 6.8 6.4 6.1 0.108 0.108 0.108 0.108 1.5KE200CA 1.5KE220CA 1.5KE250CA 171 185 214 5 5 5 190 209 237 200 220 250 210 231 263 1 1 1 274 328 344 5.5 4.6 5 0.108 0.109 0.109 VBR (Note 2) (Volts) 1. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or greater than the dc or continuous peak operating voltage level. 2. VBR measured at pulse test current IT at an ambient temperature of 25°C. 3. Surge current waveform per Figure 4 and derate per Figures 1 and 2. http://onsemi.com 3 100 PPK , PEAK POWER (kW) NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 4 10 1 0.1 µs 1 µs 10 µs 100 µs 1 ms 10 ms tP, PULSE WIDTH PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25 C 1.5KE6.8CA Series 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Figure 2. Pulse Derating Curve tr ≤ 10 µs 3/8″ PEAK VALUE – IPP 100 3/8″ 5 IPP, VALUE (%) PD, STEADY STATE POWER DISSIPATION (WATTS) Figure 1. Pulse Rating Curve 4 3 2 HALF VALUE – IPP 2 50 tP 1 0 0 25 0 50 75 100 125 150 175 TL, LEAD TEMPERATURE (C) 200 0 1 200 1000 500 VBR(NOM) = 6.8 to 13 V 20 V 24 V 43 V 100 50 20 10 5 2 1 0.3 4 1.5KE6.8CA through 1.5KE200CA IT, TEST CURRENT (AMPS) TL = 25C tP = 10 µs 3 Figure 4. Pulse Waveform 1N6373, ICTE-5, MPTE-5, through 1N6389, ICTE-45, C, MPTE-45, C 1000 500 2 t, TIME (ms) Figure 3. Steady State Power Derating IT, TEST CURRENT (AMPS) PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. TL = 25C tP = 10 µs VBR(NOM) = 6.8 to 13 V 20 V 24 V 200 43 V 75 V 100 50 20 180 V 10 120 V 5 2 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 ∆VBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS) 0.5 0.7 1 2 3 5 7 10 20 30 ∆VBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS) Figure 5. Dynamic Impedance http://onsemi.com 4 1.5KE6.8CA Series DERATING FACTOR 1 0.7 0.5 0.3 0.2 PULSE WIDTH 10 ms 0.1 0.07 0.05 1 ms 0.03 100 µs 0.02 10 µs 0.01 0.1 0.2 0.5 1 2 5 10 D, DUTY CYCLE (%) 20 50 100 Figure 6. Typical Derating Factor for Duty Cycle APPLICATION NOTES RESPONSE TIME circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Zin is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation. In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitance effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure 7. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 8. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. These devices have excellent response time, typically in the picosecond range and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper DUTY CYCLE DERATING The data of Figure 1 applies for non-repetitive conditions and at a lead temperature of 25°C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 6. Average power must be derated as the lead or ambient temperature rises above 25°C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure 6 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 µs pulse. However, when the derating factor for a given pulse of Figure 6 is multiplied by the peak power value of Figure 1 for the same pulse, the results follow the expected trend. http://onsemi.com 5 1.5KE6.8CA Series TYPICAL PROTECTION CIRCUIT Zin LOAD Vin V V Vin (TRANSIENT) VL OVERSHOOT DUE TO INDUCTIVE EFFECTS Vin (TRANSIENT) VL VL Vin td tD = TIME DELAY DUE TO CAPACITIVE EFFECT t t Figure 7. Figure 8. UL RECOGNITION* Conditioning, Temperature test, Dielectric VoltageWithstand test, Discharge test and several more. Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their Protector category. The entire series has Underwriters Laboratory Recognition for the classification of protectors (QVGV2) under the UL standard for safety 497B and File #116110. Many competitors only have one or two devices recognized or have recognition in a non-protective category. Some competitors have no recognition at all. With the UL497B recognition, our parts successfully passed several tests including Strike Voltage Breakdown test, Endurance *Applies to 1.5KE6.8CA – 1.5KE250CA CLIPPER BIDIRECTIONAL DEVICES 1. Clipper-bidirectional devices are available in the 1.5KEXXA series and are designated with a “CA” suffix; for example, 1.5KE18CA. Contact your nearest ON Semiconductor representative. 2. Clipper-bidirectional part numbers are tested in both directions to electrical parameters in preceeding table (except for VF which does not apply). 3. The 1N6267A through 1N6303A series are JEDEC registered devices and the registration does not include a “CA” suffix. To order clipper-bidirectional devices one must add CA to the 1.5KE device title. http://onsemi.com 6 1.5KE6.8CA Series OUTLINE DIMENSIONS Transient Voltage Suppressors – Axial Leaded 1500 Watt Mosorb MOSORB CASE 41A–04 ISSUE D B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD FINISH AND DIAMETER UNCONTROLLED IN DIMENSION P. 4. 041A-01 THRU 041A-03 OBSOLETE, NEW STANDARD 041A-04. D K P P DIM A B D K P A K http://onsemi.com 7 INCHES MIN MAX 0.335 0.374 0.189 0.209 0.038 0.042 1.000 ----0.050 MILLIMETERS MIN MAX 8.50 9.50 4.80 5.30 0.96 1.06 25.40 ----1.27 1.5KE6.8CA Series Mosorb is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800–282–9855 Toll Free USA/Canada http://onsemi.com 8 1.5KE6.8CA/D