P6KE6.8A Series
Zener Transient
Voltage Suppressors
Unidirectional and Bidirectional
The P6KE6.8A series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The P6KE6.8A series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetic axial leaded package and is ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications.
Specification Features:
•
•
•
•
•
•
•
Standard Zener Voltage Range — 6.8 to 200 V
Peak Power — 600 Watts @ 1 ms
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 µA Above 10 V
Maximum Temperature Coefficient Specified
UL Recognition
Response Time is Typically < 1 ns
http://onsemi.com
SURMETIC–40
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
6.8–200 VOLTS
600 WATT PEAK POWER
5 WATTS STEADY STATE
PLASTIC
CASE 17
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
POLARITY: Cathode indicated by polarity band. When operated in
zener mode, will be positive with respect to anode
MOUNTING POSITION: Any
WAFER FAB LOCATION: Phoenix, Arizona
ASSEMBLY/TEST LOCATION: Seoul, Korea
ORDERING INFORMATION
Device
Package
Shipping
P6KEXXXA
CASE 17
1000 Units/Box
P6KEXXXARL
CASE 17
Tape and Reel
4000 Units/Reel
P6KEXXXCA
Bidirectional
CASE 17
1000 Units/Box
P6KEXXXCARL
Bidirectional
CASE 17
Tape and Reel
4000 Units/Reel
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
MAXIMUM RATINGS
Rating
Peak Power Dissipation (1)
@ TL ≤ 25°C
Steady State Power Dissipation
@ TL ≤ 75°C, Lead Length = 3/8″
Derated above TL = 75°C
Forward Surge Current (2)
@ TA = 25°C
Operating and Storage Temperature Range
Symbol
Value
Unit
PPK
600
Watts
PD
5
Watts
50
mW/°C
IFSM
100
Amps
TJ, Tstg
– 55 to +150
°C
Lead temperature not less than 1/16″ from the case for 10 seconds: 230°C
NOTES: 1. Nonrepetitive current pulse per Figure 4 and derated above TA = 25°C per Figure 2.
NOTES: 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
Semiconductor Components Industries, LLC, 1999
December, 1999 – Rev. 2
1
Publication Order Number:
P6KE6.8A/D
P6KE6.8A Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 3.5 V Max, IF** = 50 A
(except bidirectional devices).
Breakdown Voltage*
Maximum
Reverse
Leakage
@ VRWM
IR (µA)
Maximum
Reverse
Surge
CurrentIIRSM{
Current
(Amps)
Maximum
Reverse Voltage
@ IRSM
(Clamping Voltage)
VRSM (Volts)
Maximum
Temperature
Coefficient
of VBR (%/°C)
Min
Nom
Max
@ IT
(mA)
Working
g Peak
Reverse
Voltage
VRWM
(Volts)
P6KE6.8A
P6KE7.5A
P6KE8.2A
P6KE9.1A
6.45
7.13
7.79
8.65
6.8
7.5
8.2
9.1
7.14
7.88
8.61
9.55
10
10
10
1
5.8
6.4
7.02
7.78
1000
500
200
50
57
53
50
45
10.5
11.3
12.1
13.4
0.057
0.061
0.065
0.068
P6KE10A
P6KE11A
P6KE12A
P6KE13A
9.5
10.5
11.4
12.4
10
11
12
13
10.5
11.6
12.6
13.7
1
1
1
1
8.55
9.4
10.2
11.1
10
5
5
5
41
38
36
33
14.5
15.6
16.7
18.2
0.073
0.075
0.078
0.081
P6KE15A
P6KE16A
P6KE18A
P6KE20A
14.3
15.2
17.1
19
15
16
18
20
15.8
16.8
18.9
21
1
1
1
1
12.8
13.6
15.3
17.1
5
5
5
5
28
27
24
22
21.2
22.5
25.2
27.7
0.084
0.086
0.088
0.09
P6KE24A
P6KE27A
P6KE30A
22.8
25.7
28.5
24
27
30
25.2
28.4
31.5
1
1
1
20.5
23.1
25.6
5
5
5
18
16
14.4
33.2
37.5
41.4
0.094
0.096
0.097
P6KE33A
P6KE36A
P6KE39A
P6KE43A
31.4
34.2
37.1
40.9
33
36
39
43
34.7
37.8
41
45.2
1
1
1
1
28.2
30.8
33.3
36.8
5
5
5
5
13.2
12
11.2
10.1
45.7
49.9
53.9
59.3
0.098
0.099
0.1
0.101
P6KE47A
P6KE51A
P6KE56A
P6KE62A
44.7
48.5
53.2
58.9
47
51
56
62
49.4
53.6
58.8
65.1
1
1
1
1
40.2
43.6
47.8
53
5
5
5
5
9.3
8.6
7.8
7.1
64.8
70.1
77
85
0.101
0.102
0.103
0.104
P6KE68A
P6KE75A
P6KE82A
P6KE91A
64.6
71.3
77.9
86.5
68
75
82
91
71.4
78.8
86.1
95.5
1
1
1
1
58.1
64.1
70.1
77.8
5
5
5
5
6.5
5.8
5.3
4.8
92
103
113
125
0.104
0.105
0.105
0.106
P6KE100A
P6KE120A
P6KE130A
95
114
124
100
120
130
105
126
137
1
1
1
85.5
102
111
5
5
5
4.4
3.6
3.3
137
165
179
0.106
0.107
0.107
P6KE150A
P6KE170A
P6KE180A
P6KE200A
143
162
171
190
150
170
180
200
158
179
189
210
1
1
1
1
128
145
154
171
5
5
5
5
2.9
2.6
2.4
2.2
207
234
246
274
0.108
0.108
0.108
0.108
VBR
(Volts)
Device
Devices listed in bold, italic are ON Semiconductor Preferred devices.
*** VBR measured after IT applied for 300 µs, IT = square wave pulse or equivalent.
*** 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
{ Surge current waveform per Figure 4 and derate per Figure 2.*
FOR BIDIRECTIONAL APPLICATIONS —
USE CA SUFFIX for P6KE6.8CA through P6KE200CA.
Electrical characteristics apply in both directions.
Preferred Bidirectional Devices —
P6KE7.5CA
P6KE11CA
P6KE22CA
P6KE27CA
http://onsemi.com
2
P6KE20CA
P6KE30CA
P6KE6.8A Series
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ TA= 25°C
100
PP, PEAK POWER (kW)
NONREPETITIVE PULSE
WAVEFORM SHOWN IN
FIGURE 4
10
100
1
0.1
0.1 µs
1 µs
10 µs
100 µs
1 ms
80
60
40
20
0
10 ms
0
25
50
75
100
Figure 1. Pulse Rating Curve
175
200
Figure 2. Pulse Derating Curve
tr
10,000
PEAK VALUE — IRSM
100
MEASURED @
ZERO BIAS
VALUE (%)
C, CAPACITANCE (pF)
150
TA, AMBIENT TEMPERATURE (°C)
tP, PULSE WIDTH
1000
PULSE WIDTH (tp) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO 50%
OF IRSM.
tr ≤ 10 µs
HALF VALUE –
IRSM
2
50
MEASURED @
STAND-OFF
VOLTAGE (VR)
100
10
0.1
tP
1
10
100
VBR, BREAKDOWN VOLTAGE (VOLTS)
0
1000
0
1
Figure 3. Capacitance versus Breakdown Voltage
2
t, TIME (ms)
3
4
Figure 4. Pulse Waveform
1
0.7
0.5
3/8″
0.3
3/8″
5
DERATING FACTOR
PD , STEADY STATE POWER DISSIPATION (WATTS)
125
4
3
2
0.2
PULSE WIDTH
10 ms
0.1
0.07
0.05
1 ms
0.03
100 µs
0.02
1
10 µs
0.01
0
0
25
50
75
100
125 150
175
TL, LEAD TEMPERATURE (°C)
0.1
200
Figure 5. Steady State Power Derating
0.2
0.5
1
2
5
10
D, DUTY CYCLE (%)
20
50
Figure 6. Typical Derating Factor for Duty Cycle
http://onsemi.com
3
100
P6KE6.8A Series
APPLICATION NOTES
RESPONSE TIME
minimum lead lengths and placing the suppressor device as
close as possible to the equipment or components to be
protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure A.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in Figure
B. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The P6KE6.8A series
has very good response time, typically < 1 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 6. Average power must be derated as the lead or
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 6 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 µs pulse. However, when the derating factor for a
given pulse of Figure 6 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
http://onsemi.com
4
P6KE6.8A Series
TYPICAL PROTECTION CIRCUIT
Zin
LOAD
Vin
V
V
Vin (TRANSIENT)
VL
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
Vin (TRANSIENT)
VL
VL
Vin
td
tD = TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 7.
Figure 8.
http://onsemi.com
5
P6KE6.8A Series
UL RECOGNITION
Breakdown test, Endurance Conditioning, Temperature test,
Dielectric Voltage-Withstand test, Discharge test and
several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their protector
category.
The entire series including the bidirectional CA suffix has
Underwriters Laboratory Recognition for the classification
of protectors (QVGV2) under the UL standard for safety
497B and File #E 116110. Many competitors only have one
or two devices recognized or have recognition in a
non-protective category. Some competitors have no
recognition at all. With the UL497B recognition, our parts
successfully passed several tests including Strike Voltage
http://onsemi.com
6
P6KE6.8A Series
OUTLINE DIMENSIONS
Transient Voltage Suppressors — Axial Leaded
600 Watt Peak Power
B
NOTE:
1. LEAD DIAMETER & FINISH NOT CONTROLLED
WITHIN DIM F.
D
K
2
DIM
A
B
D
F
K
F
A
1
INCHES
MIN
MAX
0.330 0.350
0.130 0.145
0.037 0.043
—
0.050
1.000 1.250
MILLIMETERS
MIN
MAX
8.38
8.89
3.30
3.68
0.94
1.09
—
1.27
25.40 31.75
STYLE 1:
PIN 1. ANODE
2. CATHODE
F
K
CASE 17-02
PLASTIC
(Refer to Section 10 of the TVS/Zener Data Book (DL150/D) for Surface Mount, Thermal Data and Footprint Information.)
http://onsemi.com
7
P6KE6.8A Series
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
North America Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: [email protected]
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong 800–4422–3781
Email: ONlit–[email protected]
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (M–F 2:30pm to 5:00pm Munich Time)
Email: ONlit–[email protected]
French Phone: (+1) 303–308–7141 (M–F 2:30pm to 5:00pm Toulouse Time)
Email: ONlit–[email protected]
English Phone: (+1) 303–308–7142 (M–F 1:30pm to 5:00pm UK Time)
Email: [email protected]
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–8549
Phone: 81–3–5487–8345
Email: [email protected]
Fax Response Line: 303–675–2167
800–344–3810 Toll Free USA/Canada
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
http://onsemi.com
8
1N6267A/D