NLAS4501 Single SPST Analog Switch The NLAS4501 is an analog switch manufactured in sub−micron silicon−gate CMOS technology. It achieves very low RON while maintaining extremely low power dissipation. The device is a bilateral switch suitable for switching either analog or digital signals, which may vary from zero to full supply voltage. The NLAS4501 is pin−for−pin compatible with the MAX4501. The NLAS4501 can be used as a direct replacement for the MAX4501 in all 2.0 V to 5.5 V applications where a RON performance improvement is required. The Enable pin is compatible with standard CMOS outputs when supply voltage is nominal 5.0 Volts. It is also over−voltage tolerant, making it a very useful logic level translator. • Guaranteed RON of 32 at 5.5 V • Low Power Dissipation: ICC = 2 A • Provides Voltage translation for many different voltage levels 3.3 to 5.0 V, Enable pin may go as high as +5.5 Volts 1.8 to 3.3 V 1.8 to 2.5 V Improved version of MAX4501 (at any voltage between 2 and 5.5 Volts) • • Chip Complexity: FETs 11 • Pb−Free Packages are Available http://onsemi.com MARKING DIAGRAMS A2d SC70−5/SC−88A/SOT−353 DF SUFFIX CASE 419A 5 5 A2d 1 1 SOT23−5/TSOP−5/SC59−5 DT SUFFIX CASE 483 d = Date Code COM NO GND 1 5 VCC PIN ASSIGNMENT 2 3 4 ENABLE 1 COM 2 NO 3 GND 4 ENABLE 5 VCC FUNCTION TABLE Figure 1. Pinout (Top View) On/Off Enable Input State of Analog Switch L H Off On ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2004 November, 2004 − Rev. 4 1 Publication Order Number: NLAS4501/D NLAS4501 MAXIMUM RATINGS Value Unit VCC Symbol Positive DC Supply Voltage Parameter 0.5 to 7.0 V VIN Digital Input Voltage (Enable) 0.5 to 7.0 V VIS Analog Output Voltage (VNO or VCOM) IIK DC Current, Into or Out of Any Pin TSTG Storage Temperature Range TL Lead Temperature, 1 mm from Case for 10 Seconds TJ Junction Temperature under Bias JA Thermal Resistance PD Power Dissipation in Still Air at 85°C MSL Moisture Sensitivity FR Flammability Rating VESD ESD Withstand Voltage Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) > 2000 > 100 N/A V ILatch−Up Latch−Up Performance Above VCC and Below GND at 85°C (Note 5) 300 mA 0.5 to VCC 0.5 V 20 mA 65 to 150 °C 260 °C 150 °C SC70−5/SC−88A (Note 1) TSOP−5 350 230 °C/W SC70−5/SC−88A TSOP−5 150 200 mW Level 1 Oxygen Index: 30% − 35% UL−94−VO (0.125 in) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A. 5. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Characteristics Min Max Unit 2.0 5.5 V Digital Input Voltage (Enable) GND 5.5 V VIO Static or Dynamic Voltage Across an Off Switch GND VCC V VIS Analog Input Voltage (NO, COM) GND VCC V TA Operating Temperature Range, All Package Types −55 +125 °C tr, tf Input Rise or Fall Time, (Enable Input) 0 0 100 20 ns/V Vcc = 3.3 V + 0.3 V Vcc = 5.0 V + 0.5 V 80 1,032,200 117.8 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 TJ = 80°C Time, Years TJ = 90°C Time, Hours FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 100°C Junction Temperature 5C NORMALIZED FAILURE RATE DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES TJ = 110°C VIN TJ = 120°C Positive DC Supply Voltage TJ = 130°C Symbol VCC 1 1 10 100 1000 TIME, YEARS Figure 2. Failure Rate vs. Time Junction Temperature http://onsemi.com 2 NLAS4501 DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND) Guaranteed Max Limit Symbol Parameter Condition VCC −55 to 255C <855C <1255C Unit VIH Minimum High−Level Input Voltage, Enable Inputs 2.0 3.0 4.5 5.5 1.5 2.1 3.15 3.85 1.5 2.1 3.15 3.85 1.5 2.1 3.15 3.85 V VIL Maximum Low−Level Input Voltage, Enable Inputs 2.0 3.0 4.5 5.5 0.5 0.9 1.35 1.65 0.5 0.9 1.35 1.65 0.5 0.9 1.35 1.65 V IIN Maximum Input Leakage Current, Enable Inputs VIN = 5.5 V or GND 0 V to 5.5 V +0.1 +1.0 +1.0 A ICC Maximum Quiescent Supply Current (per package) Enable and VIS = VCC or GND 5.5 1.0 1.0 2.0 A DC ELECTRICAL CHARACTERISTICS − Analog Section Guaranteed Max Limit VCC −55 to 255C <855C <1255C Unit RON Maximum ON Resistance (Figures 8 − 12) VIN = VIH VIS = VCC to GND IIsI = <10.0mA 3.0 4.5 5.5 45 30 25 50 35 30 55 40 35 RFLAT(ON) ON Resistance Flatness VIN = VIH IIsI = <10.0mA VIS = 1V, 2V, 3.5V 4.5 4 4 5 INO(OFF) Off Leakage Current, Pin 2 (Figure 3) VIN = VIL VNO = 1.0 V, VCOM = 4.5 V or VCOM = 1.0 V and VNO 4.5 V 5.5 1 10 100 nA ICOM(OFF) Off Leakage Current, Pin 1 (Figure 3) VIN = VIL VNO = 4.5 V or 1.0 V VCOM = 1.0 V or 4.5 V 5.5 1 10 100 nA Symbol Parameter Condition AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) Guaranteed Max Limit −55 to 255C VCC Test Conditions (V) Typ Max Max Unit Turn−On Time RL = 300 CL = 35 pF (Figures 4, 5, and 13) 2.0 3.0 4.5 5.5 7.0 5.0 4.5 4.5 14 10 9 9 16 12 11 11 16 12 11 11 ns tOFF Turn−Off Time RL = 300 CL = 35 pF (Figures 4, 5, and 13) 2.0 3.0 4.5 5.5 11.0 7.0 5.0 5.0 22 14 10 10 24 16 12 12 24 16 12 12 ns Parameter Min Typ <1255C tON Symbol Min <855C Max Min Typ Typical @ 25, VCC = 5.0 V CIN CNO or CNC CCOM(OFF) CCOM(ON) Maximum Input Capacitance, Select Input Analog I/O (switch off) Common I/O (switch off) Feedthrough (switch on) 8 10 10 20 http://onsemi.com 3 pF NLAS4501 ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) Symbol Parameter Condition VCC Limit V 25°C Unit BW Maximum On On−Channel Channel −3dB 3dB Bandwidth or Minimum Frequency Response VIS = 0 dBm VIS centered between VCC and GND (Fi (Figures 6 and d 14) 3.0 4.5 5.5 190 200 220 MHz VONL Maximum Feedthrough On Loss VIS = 0 dBm @ 10 kHz VIS centered between VCC and GND (Fi (Figure 6) 3.0 4.5 5.5 −2 2 −2 −2 2 dB VISO Off−Channel Off Channel Isolation f = 100 kHz; VIS = 1 V RMS VIS centered between VCC and GND (Fi (Figures 6 and d 15) 3.0 4.5 5.5 −93 93 dB Q Charge Injection Enable Input to Common I/O VIS = VCC to GND, FIS = 20 kHz tr = tf = 3 ns RIS = 0 , CL = 1000 pF Q = CL * VOUT (Figures 7 and 16) 3.0 5.5 1.5 3.0 pC Total Harmonic Distortion THD + Noise FIS = 20 Hz to 1 MHz, RL = Rgen = 600 , CL = 50 pF VIS = 3.0 VPP sine wave VIS = 5.0 VPP sine wave (Figure 17) 3.3 5.5 0.3 0.15 1.00E+05 1.00E+04 1.00E+03 1.00E+02 LEAKAGE (pA) THD 1.00E+01 1.00E+00 ICOM(ON) 1.00E−01 1.00E−02 1.00E−03 ICOM(OFF) 1.00E−04 1.00E−05 1.00E−06 1.00E−07 INO(OFF) −55 −35 −15 5 25 45 65 85 105 125 145 TEMPERATURE (°C) Figure 3. Switch Leakage vs. Temperature http://onsemi.com 4 % NLAS4501 NO VCC VCC DUT Input 50% 50% 0V COM VOUT 0.1 F 300 VOH 35 pF 90% 90% Output VOL Input tON Figure 4. tON/tOFF VCC VCC Input DUT NO COM tOFF 50% 50% 0V 300 VOUT VOH 35 pF Output 10% VOL Input 10% tOFF tON Figure 5. tON/tOFF DUT Reference Transmitted COM NO 50 Generator 50 Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. VISO = Off Channel Isolation = 20 Log VOUT for VIN at 100 kHz VIN VONL = On Channel Loss = 20 Log VOUT for VIN at 100 kHz to 50 MHz VIN Bandwidth (BW) = the frequency 3 dB below VONL Figure 6. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL DUT NO VCC VIN COM GND CL Output Off VIN Figure 7. Charge Injection: (Q) http://onsemi.com 5 On Off VOUT NLAS4501 80 80 70 70 60 VCC = 2.0 50 RON () RON () 60 40 VCC = 2.5 30 VCC = 3.0 20 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 25°C 85°C 125°C 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VCOM (VOLTS) VIS (VOLTS) Figure 8. RON vs. VCOM and VCC (@255C) Figure 9. RON vs. VCOM and Temperature, VCC = 2.0 V 2 30 40 −55°C 25 35 30 20 25 RON () RON () 30 0 45 −55°C 20 25°C 15 10 15 125°C 25°C 85°C 10 85°C 5 125°C 5 0 −55°C 10 0 0 40 20 VCC = 4.5 10 50 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 2.2 2.4 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 VCOM (VOLTS) VCOM (VOLTS) Figure 10. RON vs. VCOM and Temperature, VCC = 2.5 V Figure 11. RON vs. VCOM and Temperature, VCC = 3.0 V 3 35.0 18 16 30.0 −55°C 25°C 25.0 12 TIME (nS) RON () 14 85°C 10 8 15.0 4 5.0 2 0.0 2.0 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 tON 10.0 125°C 6 20.0 4 4.4 tOFF 3.0 4.5 5.0 5.5 VCC (V) VCOM (VOLTS) Figure 12. RON vs. VCOM and Temperature, VCC = 4.5 V Figure 13. Switching Time vs. Supply Voltage, T = 255C http://onsemi.com 6 NLAS4501 0 0 10 PHASE (Degrees) 0 BANDWIDTH (dB/Div) Phase (Degrees) 5 VCC = 5.0 V TA = 25°C 0.01 0.1 1 10 OFF ISOLATION (dB/Div) Bandwidth (On − Loss) −50 VCC = 5.0 V TA = 25°C −100 100 300 0.01 0.1 FREQUENCY (MHz) 1 100 300 10 FREQUENCY (MHz) Figure 14. ON Channel Bandwidth and Phase Shift Over Frequency Figure 15. Off Channel Isolation 100 1.60 1.40 VCC = 5.0 V 1.20 10 0.80 THD (%) Q (pC) 1.00 VCC = 3.0 V 0.60 0.40 1 3.3 V 0.1 5.5 V 0.20 0.00 0.0 0.01 1.0 2.0 3.0 3.6 VCOM (V) 4.0 4.5 10 5.0 100 1000 100000 1000000 10000 FREQUENCY (Hz) Figure 16. Charge Injection vs. VCOM Figure 17. THD vs. Frequency DEVICE ORDERING INFORMATION Device Nomenclature Technology Device Function Package Suffix Tape & Reel Suffix Package Type Shipping† NL AS 4501 DF T2 SC−88A 178 mm (7 ) 3000 / Tape & Reel NLAS4501DFT2G NL AS 4501 DF T2 SC−88A (Pb−Free) 178 mm (7 ) 3000 / Tape & Reel NLAS4501DTT1 NL AS 4501 DT T1 SOT−23/TSOP−5 178 mm (7 inch) 3000 / Tape & Reel NLAS4501DTT1G NL AS 4501 DT T1 SOT−23/TSOP−5 (Pb−Free) 178 mm (7 inch) 3000 / Tape & Reel Circuit Indicator NLAS4501DFT2 Device Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 7 NLAS4501 PACKAGE DIMENSIONS SC70−5/SC−88A/SOT−353 DF SUFFIX CASE 419A−02 ISSUE G A G 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 4 DIM A B C D G H J K N S −B− S 1 2 3 D 5 PL 0.2 (0.008) B M M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 J C K H SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 8 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 NLAS4501 PACKAGE DIMENSIONS SOT23−5/TSOP−5/SC59−5 DT SUFFIX CASE 483−02 ISSUE C D S 5 4 1 2 L A 3 B 0.05 (0.002) MILLIMETERS INCHES DIM MIN MAX MIN MAX A 2.90 3.10 0.1142 0.1220 B 1.30 1.70 0.0512 0.0669 C 0.90 1.10 0.0354 0.0433 D 0.25 0.50 0.0098 0.0197 G 0.85 1.05 0.0335 0.0413 H 0.013 0.100 0.0005 0.0040 J 0.10 0.26 0.0040 0.0102 K 0.20 0.60 0.0079 0.0236 L 1.25 1.55 0.0493 0.0610 M 0_ 10 _ 0_ 10 _ S 2.50 3.00 0.0985 0.1181 G J C H M K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. A AND B DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. SOLDERING FOOTPRINT* 0.95 0.037 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 9 NLAS4501 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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