NLAS1053 2:1 Mux/Demux Analog Switches The NLAS1053 is an advanced CMOS analog switch fabricated with silicon gate CMOS technology. It achieves very high speed propagation delays and low ON resistances while maintaining CMOS low power dissipation. The device consists of a single 2:1 Mux/Demux (SPDT), similar to ON Semiconductor’s NLAS4053 analog and digital voltages that may vary across the full power supply range (from VCC to GND). The inhibit and select input pins have over voltage protection that allows voltages above VCC up to 7.0 V to be present without damage or disruption of operation of the part, regardless of the operating voltage. • • • • • • • • • • High Speed: tPD = 1 ns (Typ) at VCC = 5.0 V Low Power Dissipation: ICC = 2 µA (Max) at TA = 25°C High Bandwidth, Improved Linearity, and Low RDSON INH Pin Allows a Both Channels ‘OFF’ Condition (With a High) RDSON ≅ 25 Ω , Performance Very Similar to the NLAS4053 Break Before Make Circuitry, Prevents Inadvertent Shorts Useful For Switching Video Frequencies Beyond 50 MHz Latch–Up Performance Exceeds 300 mA ESD Performance: HBM > 2000 V; MM > 200 V, CDM > 1500 V Tiny US8 Package, Only 2.1 X 3.0 mm http://onsemi.com MARKING DIAGRAMS 8 US8 US SUFFIX CASE 493–01 AC D 1 AC D = Device Code = Date Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. COM 1 8 VCC INH 2 7 CH0 INH Select Ch 0 Ch 1 N/C 3 6 CH1 H L L X L H OFF ON OFF OFF OFF ON GND 4 5 Select FUNCTION TABLE Figure 1. Pin Assignment Semiconductor Components Industries, LLC, 2002 February, 2002 – Rev. 0 1 Publication Order Number: NLAS1053/D NLAS1053 MAXIMUM RATINGS Symbol Parameter Value Unit −0.5 to +7.0 V VCC Positive DC Supply Voltage VIN Digital Input Voltage (Select and Inhibit) −0.5 ≤ V is ≤ +7.0 V VIS Analog Output Voltage (VCH or VCOM) −0.5 ≤ V is ≤ VCC +0.5 V IIK DC Current, Into or Out of Any Pin TSTG Storage Temperature Range TL 50 mA −65 to +150 C Lead Temperature, 1 mm from Case for 10 Seconds 260 C TJ Junction Temperature under Bias +150 C JA Thermal Resistance 250 C/W PD Power Dissipation in Still Air at 85C 250 mW MSL Moisture Sensitivity FR Flammability Rating VESD ESD Withstand Voltage Level 1 Oxygen Index: 30% – 35% UL–94–VO (0.125 in) > 2000 200 N/A Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) V ILatch–Up Latch–Up Performance Above VCC and Below GND at 85C (Note 5) ±300 mA Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm–by–1 inch, 2–ounce copper trace with no air flow. 2. Tested to EIA/JESD22–A114–A. 3. Tested to EIA/JESD22–A115–A. 4. Tested to JESD22–C101–A. 5. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit 2.0 5.5 V VCC Positive DC Supply Voltage VIN Digital Input Voltage (Select and Inhibit) GND 5.5 V VIO Static or Dynamic Voltage Across an Off Switch GND VCC V VIS Analog Input Voltage (CH, COM) GND VCC V TA Operating Temperature Range, All Package Types −55 +125 °C tr, tf Input Rise or Fall Time, (Enable Input) 0 0 100 20 ns/V Vcc = 3.3 V ± 0.3 V Vcc = 5.0 V ± 0.5 V 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 TJ = 80°C 117.8 TJ = 90°C 1,032,200 TJ = 100°C 80 TJ = 110°C Time, Years TJ = 120°C Time, Hours FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 130°C Junction Temperature C NORMALIZED FAILURE RATE DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES 1 1 10 100 TIME, YEARS Figure 2. Failure Rate versus Time Junction Temperature http://onsemi.com 2 1000 NLAS1053 DC CHARACTERISTICS – Digital Section (Voltages Referenced to GND) Guaranteed Limit Symbol VIH VIL Parameter Condition Minimum High–Level Input Voltage, Select and Inhibit Inputs Maximum Low–Level Input Voltage, Select and Inhibit Inputs IIN Maximum Input Leakage Current, Select and Inhibit Inputs VIN = 5.5 V or GND ICC Maximum Quiescent Supply Current Select and Inhibit = VCC or GND VCC 55C to 25C 85C 125C Unit 2.0 1.5 1.5 1.5 V 2.5 1.9 1.9 1.9 3.0 2.1 2.1 2.1 4.5 3.15 3.15 3.15 5.5 3.85 3.85 3.85 2.0 0.5 0.5 0.5 2.5 0.6 0.6 0.6 V 3.0 0.9 0.9 0.9 4.5 1.35 1.35 1.35 5.5 1.65 1.65 1.65 0 V to 5.5 V 0.1 1.0 1.0 A 5.5 1.0 1.0 2.0 A DC ELECTRICAL CHARACTERISTICS – Analog Section Guaranteed Limit Symbol Parameter Condition VCC 55 to 25C 85C 125C Unit RON Maximum “ON” Resistance (Figures 17 – 23) VIN = VIL or VIH VIS = GND to VCC IINI ≤ 10.0 mA 2.5 3.0 4.5 5.5 70 40 20 16 85 46 28 22 105 52 34 28 RFLAT (ON) ON Resistance Flatness (Figures 17 – 23) VIN = VIL or VIH IINI ≤ 10.0 mA VIS = 1V, 2V, 3.5V 4.5 4 4 5 RON (ON) ON Resistance Match Between Channels VIN = VIL or VIH IINI ≤ 10.0 mA VCH1 or VCH0 = 3.5 V 4.5 2 2 3 ICH0 ICH1 CH1 or CH0 Off Leakage Current (Figure 9) VIN = VIL or VIH VCH1 or VCH0 = 1.0 VCOM 4.5 V 5.5 1 10 100 nA ICOM(ON) COM ON Leakage Current (Figure 9) VIN = VIL or VIH VCH1 1.0 V or 4.5 V with VCH0 floating or VCH1 1.0 V or 4.5 V with VCH1 floating VCOM = 1.0 V or 4.5 V 5.5 1 10 100 nA http://onsemi.com 3 NLAS1053 AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) Guaranteed Max Limit 55 to 25C VCC Symbol Parameter Test Conditions 85C 125C (V) Min Typ* Max Min Max Min Max Unit tON Turn–On Time (Figures 12 and 13) INH to Output RL = 300 CL = 35 pF (Figures 4 and 5) 2.5 3.0 4.5 5.5 2 2 1 1 7 5 4 3 12 10 9 8 2 2 1 1 15 15 12 12 2 2 1 1 15 15 12 12 ns tOFF Turn–Off Time (Figures 12 and 13) INH to Output RL = 300 CL = 35 pF (Figures 4 and 5) 2.5 3.0 4.5 5.5 2 2 1 1 7 5 4 3 12 10 9 8 2 2 1 1 15 15 12 12 2 2 1 1 15 15 12 12 ns ttrans Transition Time (Channel Selection Time) (Figure ) Select to Output RL = 300 CL = 35 pF (Figures and ) 2.5 3.0 4.5 5.5 5 5 2 2 18 13 12 9 28 21 16 14 5 5 2 2 30 25 20 20 5 5 2 2 30 25 20 20 ns tBBM Minimum Break–Before–Make Break Before Make Time VIS = 3.0 V (Figure 3) RL = 300 CL = 35 pF F 2.5 3.0 4.5 5.5 1 1 1 1 12 11 6 5 1 1 1 1 1 1 1 1 ns *Typical Characteristics are at 25C. Typical @ 25, VCC = 5.0 V CIN CNO or CNC CCOM C(ON) Maximum Input Capacitance, Select/INH Input Analog I/O (switch off) Common I/O (switch off) Feedthrough (switch on) 8 10 10 20 pF ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) Symbol Condition Typical V 25°C Unit BW Maximum On–Channel –3dB Bandwidth or Minimum Frequency Response (Figure 10) VIN = 0 dBm VIN centered between VCC and GND (Figure 7) 3.0 3 0 45 4.5 55 5.5 170 200 200 MHz VONL Maximum Feedthrough On Loss VIN = 0 dBm @ 100 kHz to 50 MHz VIN centered between VCC and GND (Figure 7) 3.0 4.5 5.5 −3 3 −3 3 −3 dB VISO Off Channel Isolation Off–Channel (Figure 10) f = 100 kHz kHz; VIS = 1 V RMS VIN centered between VCC and GND (Figure 7) 3.0 4.5 5.5 −93 93 −93 93 −93 dB Q Charge Injection Select Input In ut to Common I/O ((Figure g 15)) VIN = VCC to GND, FIS = 20 kHz tr = tf = 3 ns RIS = 0 , CL = 1000 pF Q = CL * ∆VOUT (Figure 8) 3.0 5.5 1.5 3.0 pC C Total Harmonic Distortion THD + Noise (Figure 14) FIS = 20 Hz to 100 kHz, RL = Rgen = 600 , CL = 50 pF VIS = 5.0 VPP sine wave 5.5 0.1 % THD Parameter VCC http://onsemi.com 4 NLAS1053 VCC DUT VCC Input Output GND VOUT 0.1 F 300 Ω tBMM 35 pF 90% of VOH 90% Output Switch Select Pin GND Figure 3. tBBM (Time Break–Before–Make) VCC Input DUT VCC Output VOUT 0.1 F Open 50% 50% 0V 300 Ω VOH 35 pF 90% 90% Output INH Input VOL tON tOFF Figure 4. tON/tOFF VCC Input VCC DUT Output 300 Ω VOUT Open 50% 50% 0V VOH 35 pF Output 10% VOL INH Input tOFF Figure 5. tON/tOFF http://onsemi.com 5 10% tON NLAS1053 VCC 0.1 F Output VOUT GND 300 Ω VCC Input 50% 50% 0V 35 pF VCC 90% Output Select Pin 10% GND ttrans ttrans Figure 6. ttrans (Channel Selection Time) 50 Ω DUT Reference Transmitted Input Output 50 Ω Generator 50 Ω Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. VVOUT for VIN at 100 kHz IN VOUT for VIN at 100 kHz to 50 MHz VONL = On Channel Loss = 20 Log VIN VISO = Off Channel Isolation = 20 Log Bandwidth (BW) = the frequency 3 dB below VONL Figure 7. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL DUT VCC VIN Output Open GND CL Output Off VIN Figure 8. Charge Injection: (Q) http://onsemi.com 6 On Off ∆VOUT NLAS1053 0 10 –20 1 –40 Bandwidth (ON–RESPONSE) Off Isolation (dB) LEAKAGE (nA) 100 ICOM(ON) 0.1 –60 ICOM(OFF) 0.01 VCC = 5.0 V TA = 25C –80 VCC = 5.0 V ICH(OFF) –100 0.01 0.001 –55 –20 25 70 85 125 0.1 TEMPERATURE (°C) 1 10 FREQUENCY (MHz) 100 200 Figure 10. Bandwidth and Off–Channel Isolation Figure 9. Switch Leakage versus Temperature 30 0 10 20 TIME (ns) PHASE (Degree) 25 20 15 VCC = 5.0 V TA = 25C 0.01 ttrans (ns) 10 30 0.1 tON/tOFF (ns) 5 1 10 FREQUENCY (MHz) 0 2.5 100 200 3 4.5 Figure 12. tON and tOFF versus VCC at 25C 30 1 VCC = 4.5 V VINpp = 3.0 V VCC = 3.6 V THD + NOISE (%) 25 20 TIME (ns) 4 VCC (VOLTS) Figure 11. Phase versus Frequency 15 10 ttrans 0.1 VINpp = 5.0 V VCC = 5.5 V tON/tOFF 5 0 –55 3.5 0.01 –40 25 85 125 1 10 100 Temperature (°C) FREQUENCY (kHz) Figure 13. tON and tOFF versus Temp Figure 14. Total Harmonic Distortion Plus Noise versus Frequency http://onsemi.com 7 5 NLAS1053 3.0 100 2.5 10 1 VCC = 5 V 1.5 0.1 ICC (nA) Q (pC) 2.0 1.0 0.5 0.01 VCC = 3.0 V 0.001 VCC = 3 V 0 0.0001 –0.5 0 1 2 3 4 VCC = 5.0 V 0.00001 –40 5 –20 0 20 60 80 100 120 VCOM (V) Temperature (°C) Figure 15. Charge Injection versus COM Voltage Figure 16. ICC versus Temp, VCC = 3 V & 5 V 100 100 90 VCC = 2.0 V 80 80 60 RON (Ω) RON (Ω) 70 VCC = 2.5 V 40 VCC = 3.0 V 20 60 50 85°C 40 125°C 30 25°C 20 VCC = 4.5 V –55°C 10 0 0 0 1 2 3 4 0 5 0.5 1 2 2.5 VCOM (VOLTS) VCOM (VOLTS) Figure 17. RON versus VCOM and VCC (@ 25C Figure 18. RON versus VCOM and Temperature, VCC 2.0 V 70 40 60 35 25°C 30 RON (Ω) 50 RON (Ω) 1.5 40 30 125°C 25°C 20 125°C 15 85°C 20 10 85°C 10 25 –55°C –55°C 5 0 0 0 0.5 1 1.5 2 2.5 3 0 VCOM (VOLTS) 0.5 1 1.5 2 2.5 3 3.5 VCOM (VOLTS) Figure 20. RON versus VCOM and Temperature, VCC = 3.0 V Figure 19. RON versus VCOM and Temperature, VCC = 2.5 V http://onsemi.com 8 NLAS1053 20 18 18 16 16 125°C 12 12 85°C RON (Ω) RON (Ω) 125°C 14 14 10 8 10 85°C 8 –55°C 6 6 25°C –55°C 25°C 4 4 2 2 0 0 0 1 2 3 VCOM (VOLTS) 4 5 0 1 2 3 4 VCOM (VOLTS) 5 6 Figure 22. RON versus VCOM and Temperature, VCC = 5.0 V Figure 21. RON versus VCOM and Temperature, VCC = 4.5 V 20 15 RON (Ω) 125°C 10 85°C 25°C 5 –55°C 0 0 1 2 3 4 VCOM (VOLTS) 5 6 Figure 23. RON versus VCOM and Temperature, VCC = 5.5 V DEVICE ORDERING INFORMATION Device Nomenclature Device Order Number NLAS1053US Circuit Indicator Device Function Package Suffix Package Type Tape and Reel Size Technology NL AS 1053 US US8 178 mm (7″) 3000 Unit http://onsemi.com 9 NLAS1053 CAVITY TAPE TOP TAPE TAPE TRAILER (Connected to Reel Hub) NO COMPONENTS 160 mm MIN COMPONENTS TAPE LEADER NO COMPONENTS 400 mm MIN DIRECTION OF FEED Figure 24. Tape Ends for Finished Goods TAPE DIMENSIONS mm 4.00 1.50 TYP 4.00 2.00 1.75 3.50 0.25 0.30 8.00 + – 0.10 1 1.00 ± 0.25 TYP DIRECTION OF FEED Figure 25. US8 Reel Configuration/Orientation http://onsemi.com 10 NLAS1053 t MAX 1.5 mm MIN (0.06 in) A 13.0 mm 0.2 mm (0.512 in 0.008 in) 50 mm MIN (1.969 in) 20.2 mm MIN (0.795 in) FULL RADIUS G Figure 26. Reel Dimensions REEL DIMENSIONS Tape Size T and R Suffix A Max G t Max 8 mm US 178 mm (7 in) 8.4 mm, + 1.5 mm, –0.0 (0.33 in + 0.059 in, –0.00) 14.4 mm (0.56 in) DIRECTION OF FEED BARCODE LABEL POCKET Figure 27. Reel Winding Direction http://onsemi.com 11 HOLE NLAS1053 PACKAGE DIMENSIONS US8 US SUFFIX CASE 493–01 ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION A" DOES NOT INCLUDE MOLD FLASH, PROTRUSION OR GATE BURR. MOLD FLASH. PROTRUSION AND GATE BURR SHALL NOT EXCEED 0.140 MM (0.0055") PER SIDE. 4. DIMENSION B" DOES NOT INCLUDE INTER-LEAD FLASH OR PROTRUSION. INTER-LEAD FLASH AND PROTRUSION SHALL NOT E3XCEED 0.140 (0.0055") PER SIDE. 5. LEAD FINISH IS SOLDER PLATING WITH THICKNESS OF 0.0076-0. 0203 MM. (300-800 INCH). 6. ALL TOLERANCE UNLESS OTHERWISE SPECIFIED ±0.0508 (0.0002"). –X– A 8 J –Y– 5 DETAIL E B L 1 4 R S G P U C –T– SEATING PLANE H 0.10 (0.004) T K D N 0.10 (0.004) M T X Y R 0.10 TYP V M F DIM A B C D F G H J K L M N P R S U V MILLIMETERS MIN MAX 1.90 2.10 2.20 2.40 0.60 0.90 0.17 0.25 0.20 0.35 0.50 BSC 0.40 REF 0.10 0.18 0.00 0.10 3.00 3.20 0 6 5 10 0.28 0.44 0.23 0.33 0.37 0.47 0.60 0.80 0.12 BSC INCHES MIN MAX 0.075 0.083 0.087 0.094 0.024 0.035 0.007 0.010 0.008 0.014 0.020 BSC 0.016 REF 0.004 0.007 0.000 0.004 0.118 0.126 0 6 5 10 0.011 0.017 0.009 0.013 0.015 0.019 0.024 0.031 0.005 BSC DETAIL E 3.8 0.5 TYP ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ 1.8 TYP ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ 1.0 0.3 TYP (mm) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800–282–9855 Toll Free USA/Canada http://onsemi.com 12 NLAS1053/D