NLAST4599 Low Voltage Single Supply SPDT Analog Switch The NLAST4599 is an advanced high speed CMOS single pole − double throw analog switch fabricated with silicon gate CMOS technology. It achieves high speed propagation delays and low ON resistances while maintaining low power dissipation. This switch controls analog and digital voltages that may vary across the full power−supply range (from VCC to GND). The device has been designed so the ON resistance (RON) is much lower and more linear over input voltage than RON of typical CMOS analog switches. The channel select input structure provides protection when voltages between 0 V and 5.5 V are applied, regardless of the supply voltage. This input structure helps prevent device destruction caused by supply voltage − input/output voltage mismatch, battery backup, hot insertion, etc. http://onsemi.com MARKING DIAGRAMS TSOP−6 DT SUFFIX CASE 318G A1AYWG G 1 Features • • • • • • • • • • • Select Pin Compatible with TTL Levels Channel Select Input Over−Voltage Tolerant to 5.5 V Fast Switching and Propagation Speeds Break−Before−Make Circuitry Low Power Dissipation: ICC = 2 A (Max) at TA = 25°C Diode Protection Provided on Channel Select Input Improved Linearity and Lower ON Resistance over Input Voltage Latch−up Performance Exceeds 300 mA ESD Performance: HBM > 2000 V; MM > 200 V Chip Complexity: 38 FETs Pb−Free Packages are Available SELECT 1 6 COM GND 3 4 NC = Specific Device Code = Assembly Location = Year = Work Week = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position and underbar may vary depending upon manufacturing location. Select ON Channel L H NC NO See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. U U 2X1 A1 A Y W M G ORDERING INFORMATION Figure 1. Pin Assignment U COM 1 FUNCTION TABLE 5 2X0 A1 M G G NO V+ 2 CHANNEL SELECT SC−88/SC−70/SOT−363 DF SUFFIX CASE 419B NO NC Figure 2. Logic Symbol © Semiconductor Components Industries, LLC, 2006 May, 2006 − Rev. 8 1 Publication Order Number: NLAST4599/D NLAST4599 MAXIMUM RATINGS (Note 1) Symbol Value Unit Positive DC Supply Voltage Parameter VCC −0.5 to +7.0 V Analog Input Voltage (VNO or VCOM) VIS −0.5 ≤ VIS ≤ VCC )0.5 V Digital Select Input Voltage VIN −0.5 ≤ VI ≤ + 7.0 V DC Current, Into or Out of Any Pin IIK $50 mA PD 200 200 mW TSTG −65 to +150 °C Lead Temperature, 1mm from Case for 10 seconds TL 260 °C Junction Temperature Under Bias TJ 150 °C VESD 2000 200 N/A V ILATCHUP $300 mA JA 333 333 °C/W Power Dissipation in Still Air SC−88 TSOP6 Storage Temperature Range ESD Withstand Voltage Latchup Performance Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) Above VCC and Below GND at 125°C (Note 5) Thermal Resistance SC−88 TSOP6 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. 2. Tested to EIA/JESD22−A114−A 3. Tested to EIA/JESD22−A115−A 4. Tested to JESD22−C101−A 5. Tested to EIA/JESD78 RECOMMENDED OPERATING CONDITIONS Characteristics Symbol Min Max Unit DC Supply Voltage VCC 2.0 5.5 V Digital Select Input Voltage VIN GND 5.5 V Analog Input Voltage (NC, NO, COM) VIS GND VCC V Operating Temperature Range TA −55 +125 °C 0 0 100 20 tr, tf ns/V VCC = 3.3 V + 0.3 V VCC = 5.0 V + 0.5 V 117.8 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 TJ = 80°C 1,032,200 TJ = 100°C 80 TJ = 110°C Time, Years TJ = 120°C Time, Hours FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 130°C Junction Temperature 5C NORMALIZED FAILURE RATE DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES TJ = 90°C Input Rise or Fall Time SELECT 1 1 10 100 1000 TIME, YEARS Figure 3. Failure Rate vs. Time Junction Temperature http://onsemi.com 2 NLAST4599 DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND) Guaranteed Limit Symbol VCC −55 to 255C <855C <1255C Unit Minimum High−Level Input Voltage, Select Input VIH 3.0 4.5 5.5 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 V Maximum Low−Level Input Voltage, Select Input VIL 3.0 4.5 5.5 0.5 0.8 0.8 0.5 0.8 0.8 0.5 0.8 0.8 V Parameter Condition Maximum Input Leakage Current, Select Input VIN = 5.5 V or GND IIN 5.5 +0.1 +1.0 +1.0 A Power Off Leakage Current VIN = 5.5 V or GND IOFF 0 +10 +10 +10 A Maximum Quiescent Supply Current Select and VIS = VCC or GND ICC 5.5 1.0 1.0 2.0 A Symbol VCC −55 to 255C <855C <1255C Unit DC ELECTRICAL CHARACTERISTICS − Analog Section Guaranteed Limit Parameter Condition Maximum “ON” Resistance (Figures 17 − 23) VIN = VIL or VIH VIS = GND to VCC IINI < 10.0 mA RON 2.5 3.0 4.5 5.5 85 45 30 25 95 50 35 30 105 55 40 35 ON Resistance Flatness (Figures 17 − 23) VIN = VIL or VIH IINI < 10.0 mA VIS = 1V, 2V, 3.5V RFLAT 4.5 4 4 5 ON Resistance Match Between Channels VIN = VIL or VIH IINI < 10.0 mA VNO or VNC = 3.5 V RON 4.5 2 2 3 NO or NC Off Leakage Current (Figure 9) VIN = VIL or VIH VNO or VNC = 1.0 VCOM 4.5 V INC(OFF) INO(OFF) 5.5 1 10 100 nA COM ON Leakage Current (Figure 9) VIN = VIL or VIH VNO 1.0 V or 4.5 V with VNC floating or VNO 1.0 V or 4.5 V with VNO floating VCOM = 1.0 V or 4.5 V ICOM(ON) 5.5 1 10 100 nA (ON) (ON) http://onsemi.com 3 NLAST4599 AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) Guaranteed Max Limit VCC VIS −55 to 25_C <85_C <125_C Test Conditions Symbol (V) (V) Min Typ* Max Min Max Min Max Unit Turn−On Time (Figures 12 and 13) RL = 300 CL = 35 pF (Figures 5 and 6) tON 2.5 3.0 4.5 5.5 2.0 2.0 3.0 3.0 5 5 2 2 23 16 11 9 28 21 16 14 5 5 2 2 30 25 20 20 5 5 2 2 30 25 20 20 ns Turn−Off Time (Figures 12 and 13) RL = 300 CL = 35 pF (Figures 5 and 6) tOFF 2.5 3.0 4.5 5.5 2.0 2.0 3.0 3.0 1 1 1 1 7 5 4 3 12 10 9 8 1 1 1 1 15 15 12 12 1 1 1 1 15 15 12 12 ns Minimum Break−Before− Make Time VIS = 3.0 V (Figure 4) RL = 300 CL = 35 pF tBBM 2.5 3.0 4.5 5.5 2.0 2.0 3.0 3.0 1 1 1 1 12 11 6 5 Parameter 1 1 1 1 1 1 1 1 ns Typical @ 25, VCC = 5.0 V Maximum Input Capacitance, Select Input Analog I/O (switch off) Common I/O (switch off) Feedthrough (switch on) CIN CNO or CNC CCOM C(ON) 8 10 10 20 *Typical Characteristics are at 25_C. ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ pF ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) Condition Parameter VCC V Typical 25°C BW 3.0 4.5 5.5 170 200 200 MHz VONL 3.0 4.5 5.5 −2 −2 −2 dB VISO 3.0 4.5 5.5 −93 −93 −93 dB 3.0 5.5 1.5 3.0 Symbol Maximum On−Channel −3dB Bandwidth or Minimum Frequency Response (Figure 10) VIN = 0 dBm VIN centered between VCC and GND (Figure 7) Maximum Feedthrough On Loss VIN = 0 dBm @ 100 kHz to 50 MHz VIN centered between VCC and GND (Figure 7) Off−Channel Isolation (Figure 10) f = 100 kHz; VIS = 1 V RMS VIN centered between VCC and GND (Figure 7) Charge Injection Select Input to Common I/O (Figure 15) VIN = VCC to GND, FIS = 20 kHz tr = tf = 3 ns RIS = 0 , CL = 1000 pF Q = CL * VOUT, (Figure 8) Total Harmonic Distortion THD + Noise (Figure 14) FIS = 20 Hz to 100 kHz, RL = Rgen = 600 , CL = 50 pF VIS = 5.0 VPP sine wave Q ORDERING INFORMATION Unit pC THD % 5.5 0.1 Device Nomenclature Device Circuit Indicator Technology Device Function Package Suffix Tape & Reel Suffix DF T2 NLAST4599DFT2 NLAST4599DTT1G Shipping† SC−88/SC−70/SOT−363 NLAST4599DFT2G NLAST4599DTT1 Package NL AS 4599 SC−88/SC−70/SOT−363 (Pb−Free) TSOP−6 DT T1 3000/Tape & Reel TSOP−6 (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 NLAST4599 VCC DUT VCC Input Output GND VOUT 0.1 F 300 tBMM 35 pF 90% 90% of VOH Output Switch Select Pin GND Figure 4. tBBM (Time Break−Before−Make) VCC DUT VCC 0.1 F Input Output 50% VOUT Open 50% 0V 300 VOH 35 pF 90% 90% Output VOL Input tON tOFF Figure 5. tON/tOFF VCC VCC Input DUT Output 300 50% VOUT Open 50% 0V VOH 35 pF Output Input tOFF Figure 6. tON/tOFF http://onsemi.com 5 10% 10% VOL tON NLAST4599 50 DUT Reference Transmitted Input Output 50 Generator 50 Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. ǒVVOUT Ǔ for VIN at 100 kHz IN VOUT Ǔ for VIN at 100 kHz to 50 MHz VONL = On Channel Loss = 20 Log ǒ VIN VISO = Off Channel Isolation = 20 Log Bandwidth (BW) = the frequency 3 dB below VONL Figure 7. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL DUT VCC VIN Output Open GND CL Output Off On VIN Figure 8. Charge Injection: (Q) 100 LEAKAGE (nA) 10 1 ICOM(ON) 0.1 ICOM(OFF) 0.01 VCC = 5.0 V INO(OFF) 0.001 −55 −20 25 70 85 TEMPERATURE (°C) Figure 9. Switch Leakage vs. Temperature http://onsemi.com 6 125 Off VOUT NLAST4599 0 Bandwidth (ON−RESPONSE) 0 −40 PHASE (Degree) −20 (dB) Off Isolation −60 10 20 30 VCC = 5.0 V TA = 25_C −80 −100 0.01 0.1 VCC = 5.0 V TA = 25_C 100 200 1 10 FREQUENCY (MHz) 0.01 Figure 10. Bandwidth and Off−Channel Isolation 0.1 100 200 1 10 FREQUENCY (MHz) Figure 11. Phase vs. Frequency 30 30 25 25 20 20 TIME (ns) TIME (ns) VCC = 4.5 V 15 tON (ns) 10 tOFF (ns) 5 0 2.5 3 3.5 4 4.5 10 tON 5 tOFF 0 −55 5 −40 85 25 125 VCC (VOLTS) Temperature (°C) Figure 12. tON and tOFF vs. VCC at 255C Figure 13. tON and tOFF vs. Temp 1 3.0 VINpp = 3.0 V VCC = 3.6 V 2.5 2.0 Q (pC) THD + NOISE (%) 15 0.1 VINpp = 5.0 V VCC = 5.5 V VCC = 5 V 1.5 1.0 0.5 VCC = 3 V 0 −0.5 0.01 1 10 0 100 1 2 3 4 FREQUENCY (kHz) VCOM (V) Figure 14. Total Harmonic Distortion Plus Noise vs. Frequency Figure 15. Charge Injection vs. COM Voltage http://onsemi.com 7 5 NLAST4599 100 100 VCC = 2.0 V 10 80 RON () ICC (nA) 1 0.1 0.01 60 VCC = 2.5 V 40 VCC = 3.0 V 0.001 VCC = 3.0 V VCC = 4.0 V 20 0.0001 VCC = 5.0 V 0.00001 −40 −20 0 20 60 VCC = 5.5 V 80 100 0 0.0 120 3.0 4.0 5.0 VIS (VDC) Figure 16. ICC vs. Temp, VCC = 3 V & 5 V Figure 17. RON vs. VCC, Temp = 255C 90 90 80 80 70 70 60 60 RON () 100 RON () 2.0 Temperature (°C) 100 50 40 125°C 30 40 25°C −55°C 10 85°C 0.5 50 20 −55°C 10 6.0 30 25°C 20 0 0.0 1.0 1.0 1.5 2.0 0 0.0 2.5 85°C 125°C 0.5 1.0 1.5 VIS (VDC) 2.0 2.5 3.0 VIS (VDC) Figure 18. RON vs Temp, VCC = 2.0 V Figure 19. RON vs. Temp, VCC = 2.5 V 50 30 45 25 40 20 30 RON () RON () 35 25 20 125°C 10 15 0 0.0 25°C 85°C 10 5 15 5 25°C 85°C 125°C −55°C −55°C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VIS (VDC) VIS (VDC) Figure 21. RON vs. Temp, VCC = 4.5 V Figure 20. RON vs. Temp, VCC = 3.0 V http://onsemi.com 8 4.5 NLAST4599 25 25 125°C 20 20 RON () RON () 125°C 15 25°C 10 −55°C 85°C CAVITY TAPE 25°C 10 85°C 5 0 0.0 15 −55°C 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.0 VIS (VDC) VIS (VDC) Figure 22. RON vs. Temp, VCC = 5.0 V Figure 23. RON vs. Temp, VCC = 5.5 V TOP TAPE TAPE TRAILER (Connected to Reel Hub) NO COMPONENTS 160 mm MIN COMPONENTS TAPE LEADER NO COMPONENTS 400 mm MIN DIRECTION OF FEED Figure 24. Tape Ends for Finished Goods TAPE DIMENSIONS mm 4.00 Ğ1.50 TYP 4.00 2.00 1.75 3.50 $0.50 8.00 $0.30 1 Ğ1.00 MIN DIRECTION OF FEED Figure 25. SC70−6/SC−88/SOT−363 DFT2 and SOT23−6/TSOP−6/SC59−6 DTT1 Reel Configuration/Orientation http://onsemi.com 9 NLAST4599 t MAX 1.5 mm MIN (0.06 in) A 13.0 mm $0.2 mm (0.512 in $0.008 in) 50 mm MIN (1.969 in) 20.2 mm MIN (0.795 in) FULL RADIUS G Figure 26. Reel Dimensions REEL DIMENSIONS Tape Size T and R Suffix A Max G t Max 8 mm T1, T2 178 mm (7 in) 8.4 mm, + 1.5 mm, −0.0 (0.33 in + 0.059 in, −0.00) 14.4 mm (0.56 in) DIRECTION OF FEED BARCODE LABEL POCKET Figure 27. Reel Winding Direction http://onsemi.com 10 HOLE NLAST4599 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D 6 HE 1 5 4 2 3 E b e q c A 0.05 (0.002) L A1 DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 11 MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° NLAST4599 PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. D e 6 5 4 1 2 3 HE DIM A A1 A3 b C D E e L HE −E− b 6 PL 0.2 (0.008) M E M MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 A3 C A A1 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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