74HC132 Quad 2−Input NAND Gate with Schmitt−Trigger Inputs High−Performance Silicon−Gate CMOS The 74HC132 is identical in pinout to the LS132. The device inputs are compatible with standard CMOS outputs; with pull−up resistors, they are compatible with LSTTL outputs. The HC132 can be used to enhance noise immunity or to square up slowly changing waveforms. http://onsemi.com MARKING DIAGRAMS Features • • • • • • • • • 14 Output Drive Capability: 10 LSTTL Loads Outputs Directly Interface to CMOS, NMOS, and TTL Operating Voltage Range: 2.0 to 6.0 V Low Input Current: 1.0 mA High Noise Immunity Characteristic of CMOS Devices In Compliance with the Requirements as Defined by JEDEC Standard No. 7A ESD Performance: HBM > 2000 V; Machine Model > 200 V Chip Complexity: 72 FETs or 18 Equivalent Gates These are Pb−Free Devices A1 1 14 VCC B1 2 13 B4 Y1 3 12 A4 A2 4 11 Y4 B2 5 10 B3 Y2 6 9 A3 GND 7 8 Y3 SOIC−14 D SUFFIX CASE 751A HC132G AWLYWW 1 14 HC 132 ALYW G G TSSOP−14 DT SUFFIX CASE 948G 1 HC132 = Device Code A = Assembly Location L, WL = Wafer Lot Y = Year W, WW = Work Week G or G = Pb−Free Package (Note: Microdot may be in either location) FUNCTION TABLE Inputs Figure 1. Pin Assignment Output A B Y L L H H L H L H H H H L ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 1 1 Publication Order Number: 74HC132/D 74HC132 A1 1 3 B1 A2 2 4 6 B2 A3 Y2 5 Y = AB 9 8 B3 Y1 Y3 10 A4 12 11 B4 Y4 13 PIN 14 = VCC PIN 7 = GND Figure 2. Logic Diagram ORDERING INFORMATION Package Shipping † SOIC−14 (Pb−Free) 2500 / Tape & Reel TSSOP−14* 2500 / Tape & Reel Device 74HC132DR2G 74HC132DTR2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. http://onsemi.com 2 74HC132 MAXIMUM RATINGS Symbol Parameter Value Unit VCC Positive DC Supply Voltage 0.5 to 7.0 V VIN Digital Input Voltage 0.5 to 7.0 V VOUT DC Output Voltage 0.5 to 7.0 0.5 to VCC 0.5 V IIK Input Diode Current 20 mA IOK Output Diode Current 20 mA IOUT DC Output Current, per Pin 25 mA ICC DC Supply Current, VCC and GND Pins 75 mA IGND DC Ground Current per Ground Pin 75 mA TSTG Storage Temperature Range 65 to 150 _C 260 _C 150 _C 14−SOIC 14−TSSOP 125 170 _C/W SOIC TSSOP 500 450 mW Output in 3−State High or Low State TL Lead Temperature, 1 mm from Case for 10 Seconds TJ Junction Temperature Under Bias qJA Thermal Resistance PD Power Dissipation in Still Air at 85_C MSL Moisture Sensitivity FR Flammability Rating VESD ILatchup Level 1 Oxygen Index: 30% − 35% ESD Withstand Voltage Latchup Performance UL 94 V−0 @ 0.125 in Human Body Model (Note 1) Machine Model (Note 2) 2000 200 V Above VCC and Below GND at 85_C (Note 3) 300 mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Tested to EIA/JESD22−A114−A. 2. Tested to EIA/JESD22−A115−A. 3. Tested to EIA/JESD78. 4. For high frequency or heavy load considerations, see Chapter 2the ON Semiconductor High−Speed CMOS Data Book (DL129/D). RECOMMENDED OPERATING CONDITIONS Symbol VCC VIN, VOUT Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) TA Operating Temperature, All Package Types tr, tf Input Rise and Fall Time (Figure 3) Min Max Unit 2.0 6.0 V 0 VCC V 55 125 _C − No Limit (Note 5) ns 5. When VIN 0.5 VCC, ICC >> quiescent current. 6. Unused inputs may not be left open. All inputs must be tied to a high−logic voltage level or a low−logic input voltage level. http://onsemi.com 3 74HC132 DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) VCC Symbol Parameter VT+max Maximum Positive−Going Input Threshold Voltage (Figure 5) VT+min Test Conditions Guaranteed Limit (V) *55_C to 25_C 85_C 125_C Unit VOUT = 0.1 V |IOUT| 20 mA 2.0 4.5 6.0 1.5 3.15 4.2 1.5 3.15 4.2 1.5 3.15 4.2 V Minimum Positive−Going Input Threshold Voltage (Figure 5) VOUT = 0.1 V |IOUT| 20 mA 2.0 4.5 6.0 1.0 2.3 3.0 0.95 2.25 2.95 0.95 2.25 2.95 V VT–max Maximum Negative−Going Input Threshold Voltage (Figure 5) VOUT = VCC – 0.1 V |IOUT| 20 mA 2.0 4.5 6.0 0.9 2.0 2.6 0.95 2.05 2.65 0.95 2.05 2.65 V VT–min Minimum Negative−Going Input Threshold Voltage (Figure 5) VOUT = VCC – 0.1 V |IOUT| 20 mA 2.0 4.5 6.0 0.3 0.9 1.2 0.3 0.9 1.2 0.3 0.9 1.2 V VHmax (Note 7) Maximum Hysteresis Voltage (Figure 5) VOUT = 0.1 V or VCC – 0.1 V |IOUT| 20 mA 2.0 4.5 6.0 1.2 2.25 3.0 1.2 2.25 3.0 1.2 2.25 3.0 V VHmin (Note 7) Minimum Hysteresis Voltage (Figure 5) VOUT = 0.1 V or VCC – 0.1 V |IOUT| 20 mA 2.0 4.5 6.0 0.2 0.4 0.5 0.2 0.4 0.5 0.2 0.4 0.5 V VOH Minimum High−Level Output Voltage VIN VT−min or VT+max |IOUT| 20 mA 2.0 4.5 6.0 1.9 4.4 5.9 1.9 4.4 5.9 1.9 4.4 5.9 V 4.5 6.0 3.98 5.48 3.84 5.34 3.7 5.2 2.0 4.5 6.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 4.5 6.0 0.26 0.26 0.33 0.33 0.4 0.4 VIN VOL Maximum Low−Level Output Voltage −VT−min or VT+max |IOUT| 4.0 mA |IOUT| 5.2 mA VIN ≥ VT+max |IOUT| 20 mA VIN ≥ VT+max |IOUT| 4.0 mA |IOUT| 5.2 mA V IIN Maximum Input Leakage Current VIN = VCC or GND 6.0 0.1 1.0 1.0 mA ICC Maximum Quiescent Supply Current (per Package) VIN = VCC or GND IOUT = 0 mA 6.0 2.0 20 40 mA 7. VHmin (VT+min) (VT−max); VHmax = (VT+max) (VT−min). 8. Information on typical parametric values can be found in the ON Semiconductor High−Speed CMOS Data Book (DL129/D). http://onsemi.com 4 74HC132 AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns) VCC Symbol Parameter Guaranteed Limit (V) *55_C to 25_C 85_C 125_C Unit tPLH, tPHL Maximum Propagation Delay, Input A or B to Output Y (Figures 3 and 4) 2.0 4.5 6.0 125 25 21 155 31 26 190 38 32 ns tTLH, tTHL Maximum Output Transition Time, Any Output (Figures 3 and 4) 2.0 4.5 6.0 75 15 13 95 19 16 110 22 19 ns Maximum Input Capacitance — 10 10 10 pF Cin 9. For propagation delays with loads other than 50 pF, and information on typical parametric values, see the ON Semiconductor High−Speed CMOS Data Book (DL129/D). Typical @ 25°C, VCC = 5.0 V CPD Power Dissipation Capacitance (per Gate) (Note 10) 24 10. Used to determine the no−load dynamic power consumption: P D = CPD VCC Semiconductor High−Speed CMOS Data Book (DL129/D). tr tPHL tTHL + ICC VCC . For load considerations, see the ON VCC tPLH OUTPUT DEVICE UNDER TEST GND 90% 50% 10% Y pF TEST POINT tf 90% 50% 10% INPUT A OR B 2f tTLH CL* *Includes all probe and jig capacitance Figure 3. Switching Waveforms Figure 4. Test Circuit http://onsemi.com 5 VT, TYPICAL INPUT THRESHOLD VOLTAGE (VOLTS) 74HC132 4 3 VHtyp 2 1 2 3 4 5 VCC, POWER SUPPLY VOLTAGE (VOLTS) VHtyp = (VT+ typ) − (VT− typ) 6 Figure 5. Typical Input Threshold, VT+, VT− Versus Power Supply Voltage VH VIN VCC VCC VH VT+ VT− VT+ VT− VIN GND GND VOH VOH VOUT VOUT VOL VOL VCC (a)A SCHMITT TRIGGER SQUARES UP INPUTS (a)WITH SLOW RISE AND FALL TIMES VOUT VIN (b)A SCHMITT TRIGGER OFFERS MAXIMUM NOISE IMMUNITY Figure 6. Typical Schmitt−Trigger Applications http://onsemi.com 6 74HC132 PACKAGE DIMENSIONS SOIC−14 CASE 751A−03 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. −A− 14 8 −B− P 7 PL 0.25 (0.010) M 7 1 G −T− D 14 PL 0.25 (0.010) T B S A DIM A B C D F G J K M P R J M K M F R X 45 _ C SEATING PLANE B M S SOLDERING FOOTPRINT* 7X 7.04 14X 1.52 1 14X 0.58 1.27 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MILLIMETERS MIN MAX 8.55 8.75 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.337 0.344 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.228 0.244 0.010 0.019 74HC132 PACKAGE DIMENSIONS TSSOP−14 CASE 948G−01 ISSUE B 14X K REF 0.10 (0.004) 0.15 (0.006) T U M T U V S S N 2X 14 L/2 0.25 (0.010) 8 M B −U− L PIN 1 IDENT. N F 7 1 0.15 (0.006) T U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. S S DETAIL E ÇÇÇ ÉÉÉ ÇÇÇ ÉÉÉ ÇÇÇ K A −V− K1 J J1 DIM A B C D F G H J J1 K K1 L M SECTION N−N −W− C 0.10 (0.004) −T− SEATING PLANE D H G DETAIL E SOLDERING FOOTPRINT* 7.06 1 0.65 PITCH 14X 0.36 14X 1.26 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 8 MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 −−− 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.50 0.60 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 −−− 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.020 0.024 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ 74HC132 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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