MBT3904DW1T1, MBT3904DW2T1 Dual General Purpose Transistors The MBT3904DW1T1 and MBT3904DW2T1 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium. http://onsemi.com MARKING DIAGRAM 6 Features • • • • • • • SOT−363/SC−88/ SC70−6 CASE 419B 6 hFE, 100−300 Low VCE(sat), ≤ 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7−inch/3,000 Unit Tape and Reel Pb−Free Packages are Available XXd 1 1 XX = MA for MBT3904DW1T1 MJ for MBT3904DW2T1 d = Date Code (3) (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage VEBO 6.0 Vdc IC 200 mAdc ESD HBM>16000, MM>2000 V Collector Current − Continuous Electrostatic Discharge Q1 (4) Max Unit PD 150 mW Thermal Resistance, Junction−to−Ambient RJA 833 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. (2) (1) Q2 Q1 (4) Symbol (6) MBT3904DW1T1 STYLE 1 THERAML CHARACTERISTICS Total Package Dissipation (Note 1) TA = 25°C (5) (3) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Characteristic Q2 (5) (6) MBT3904DW2T1 STYLE 27 ORDERING INFORMATION Device Package Shipping† MBT3904DW1T1 SOT−363 3000 Units/Reel MBT3904DW1T1G SOT−363 (Pb−Free) 3000 Units/Reel SOT−363 3000 Units/Reel MBT3904DW2T1G SOT−363 (Pb−Free) MBT3904DW2T1 3000 Units/Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2004 September, 2004 − Rev. 4 1 Publication Order Number: MBT3904DW1T1/D MBT3904DW1T1, MBT3904DW2T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 40 − 60 − 6.0 − − 50 − 50 40 70 100 60 30 − − 300 − − − − 0.2 0.3 0.65 − 0.85 0.95 300 − − 4.0 − 8.0 1.0 2.0 10 12 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hie Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hre Small −Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hfe Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hoe Noise Figure (VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k , f = 1.0 kHz) NF 2. Pulse Test: Pulse Width ≤ 300 s; Duty Cycle ≤ 2.0%. http://onsemi.com 2 MHz pF pF k X 10− 4 0.5 0.1 8.0 10 100 100 400 400 1.0 3.0 40 60 − − 5.0 4.0 − mhos dB MBT3904DW1T1, MBT3904DW2T1 SWITCHING CHARACTERISTICS Characteristic Symbol Min Max Delay Time (VCC = 3.0 Vdc, VBE = − 0.5 Vdc) td − 35 Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) tr − 35 Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) ts − 200 Fall Time (IB1 = IB2 = 1.0 mAdc) tf − 50 DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 < t1 < 500 s 275 t1 DUTY CYCLE = 2% 10 k 275 10 k 1N916 −9.1 V′ < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit http://onsemi.com 3 ns +10.9 V Cs < 4 pF* < 1 ns ns +3 V 0 −0.5 V Unit Cs < 4 pF* MBT3904DW1T1, MBT3904DW2T1 TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 10 5000 2000 5.0 Q, CHARGE (pC) CAPACITANCE (pF) VCC = 40 V IC/IB = 10 3000 7.0 Cibo 3.0 Cobo 2.0 1000 700 500 QT 300 200 QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 70 50 20 30 40 30 50 70 100 200 500 IC/IB = 10 t r, RISE TIME (ns) 100 70 tr @ VCC = 3.0 V 50 30 20 40 V 15 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 50 30 20 7 5 200 5.0 7.0 10 20 30 50 70 100 Figure 5. Turn −On Time Figure 6. Rise Time IC/IB = 10 IC/IB = 10 IC/IB = 20 100 70 50 10 7 5 7 5 20 30 50 70 100 200 IC/IB = 10 30 20 10 5.0 7.0 10 VCC = 40 V IB1 = IB2 300 200 IC/IB = 20 30 20 200 500 t′s = ts − 1/8 tf IB1 = IB2 50 2.0 3.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 100 70 1.0 1.0 IC, COLLECTOR CURRENT (mA) 500 IC/IB = 20 100 70 10 2.0 V td @ VOB = 0 V VCC = 40 V IC/IB = 10 300 200 t f , FALL TIME (ns) TIME (ns) 20 Figure 4. Charge Data 10 t s′ , STORAGE TIME (ns) 5.0 7.0 10 Figure 3. Capacitance 300 200 300 200 2.0 3.0 IC, COLLECTOR CURRENT (mA) 500 7 5 1.0 REVERSE BIAS VOLTAGE (VOLTS) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time http://onsemi.com 4 200 MBT3904DW1T1, MBT3904DW2T1 TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 f = 1.0 kHz SOURCE RESISTANCE = 200 IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 A 4 SOURCE RESISTANCE = 500 IC = 100 A 2 0 0.1 0.2 0.4 1.0 2.0 IC = 1.0 mA 12 NF, NOISE FIGURE (dB) 10 NF, NOISE FIGURE (dB) 14 SOURCE RESISTANCE = 200 IC = 1.0 mA IC = 0.5 mA 10 IC = 50 A 8 IC = 100 A 6 4 2 4.0 10 20 40 0 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 9. Noise Figure Figure 10. Noise Figure 40 100 5.0 10 5.0 10 h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) 100 hoe, OUTPUT ADMITTANCE ( mhos) h fe , CURRENT GAIN 300 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 50 20 10 5 2 1 10 0.1 0.2 Figure 11. Current Gain hre , VOLTAGE FEEDBACK RATIO (x 10 −4) Figure 12. Output Admittance h ie , INPUT IMPEDANCE (k OHMS) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 Figure 13. Input Impedance 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 14. Voltage Feedback Ratio http://onsemi.com 5 MBT3904DW1T1, MBT3904DW2T1 h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 −55 °C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 70 50 100 200 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 16. Collector Saturation Region 1.0 1.2 TJ = 25°C VBE(sat) @ IC/IB =10 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 VC FOR VCE(sat) 0 −55 °C TO +25°C −0.5 −55 °C TO +25°C −1.0 +25°C TO +125°C VB FOR VBE(sat) −1.5 0.2 0 +25°C TO +125°C 0.5 COEFFICIENT (mV/ °C) V, VOLTAGE (VOLTS) 1.0 1.0 2.0 5.0 10 20 50 100 −2.0 200 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. “ON” Voltages Figure 18. Temperature Coefficients http://onsemi.com 6 180 200 MBT3904DW1T1, MBT3904DW2T1 PACKAGE DIMENSIONS SOT−363/SC−88/SC70−6 CASE 419B−02 ISSUE U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. A G 6 5 4 DIM A B C D G H J K N S −B− S 1 2 3 D 6 PL 0.2 (0.008) M B M MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 N J C H INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 STYLE 27: PIN 1. BASE 2 2. BASE 1 3. COLLECTOR 1 4. EMITTER 1 5. EMITTER 2 6. COLLECTOR 2 K SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MBT3904DW1T1, MBT3904DW2T1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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