MMBT3906LT1 Preferred Device General Purpose Transistor PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40 Vdc Emitter −Base Voltage VEBO −5.0 Vdc IC −200 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RJA 556 °C/W PD 300 mW 2.4 mW/°C RJA 417 °C/W TJ, Tstg −55 to +150 °C Collector Current − Continuous COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance Junction−to−Ambient Junction and Storage Temperature 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. MARKING DIAGRAM 3 1 2A 2 SOT−23 (TO−236) CASE 318 Style 6 2A = Specific Device Code ORDERING INFORMATION Device Package Shipping† MMBT3906LT1 SOT−23 3000 / Tape & Reel MMBT3906LT1G SOT−23 3000 / Tape & Reel MMBT3906LT3 SOT−23 10000 / Tape & Reel MMBT3906LT3G SOT−23 10000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 February, 2004 − Rev. 4 1 Publication Order Number: MMBT3906LT1/D MMBT3906LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector −Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO −40 — Vdc Collector −Base Breakdown Voltage (IC = −10 Adc, IE = 0) V(BR)CBO −40 — Vdc Emitter −Base Breakdown Voltage (IE = −10 Adc, IC = 0) V(BR)EBO −5.0 — Vdc IBL — −50 nAdc ICEX — −50 nAdc 60 80 100 60 30 — — 300 — — — — −0.25 −0.4 −0.65 — −0.85 −0.95 fT 250 — MHz Output Capacitance (VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo — 4.5 pF Input Capacitance (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo — 10 pF Input Impedance (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hie 2.0 12 kΩ Voltage Feedback Ratio (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hre 0.1 10 X 10− 4 Small −Signal Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hfe 100 400 — Output Admittance (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hoe 3.0 60 mhos Noise Figure (IC = −100 Adc, VCE = −5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) NF — 4.0 dB (VCC = −3.0 3.0 Vdc, VBE = 0.5 Vdc, IC = −10 mAdc, IB1 = −1.0 mAdc) td — 35 tr — 35 (VCC = −3.0 3.0 Vdc, IC = −10 10 mAdc, IB1 = IB2 = −1.0 mAdc) ts — 225 tf — 75 Characteristic OFF CHARACTERISTICS Base Cutoff Current (VCE = −30 Vdc, VEB = −3.0 Vdc) Collector Cutoff Current (VCE = −30 Vdc, VEB = −3.0 Vdc) ON CHARACTERISTICS (Note 3) DC Current Gain (IC = −0.1 mAdc, VCE = −1.0 Vdc) (IC = −1.0 mAdc, VCE = −1.0 Vdc) (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −50 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) HFE Collector −Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) VBE(sat) — Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain — Bandwidth Product (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time ns ns 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 3V 3V < 1 ns +9.1 V 275 275 < 1 ns +0.5 V 10 k 10 k 0 CS < 4 pF* 10.6 V 300 ns DUTY CYCLE = 2% 1N916 10 < t1 < 500 s t1 CS < 4 pF* 10.9 V DUTY CYCLE = 2% * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit http://onsemi.com 2 MMBT3906LT1 TYPICAL TRANSIENT CHARACTERISTICS 10 5000 7.0 3000 2000 Cobo 5.0 Q, CHARGE (pC) CAPACITANCE (pF) TJ = 25°C TJ = 125°C Cibo 3.0 2.0 VCC = 40 V IC/IB = 10 1000 700 500 300 200 QT QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS) 100 70 50 20 30 40 1.0 2.0 3.0 Figure 3. Capacitance 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 Figure 4. Charge Data 500 500 IC/IB = 10 300 200 VCC = 40 V IB1 = IB2 300 200 tr @ VCC = 3.0 V 15 V 30 20 t f , FALL TIME (ns) TIME (ns) IC/IB = 20 100 70 50 100 70 50 30 20 IC/IB = 10 40 V 10 7 5 10 2.0 V 7 5 td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn −On Time Figure 6. Fall Time http://onsemi.com 3 200 MMBT3906LT1 TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = − 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 SOURCE RESISTANCE = 200 IC = 1.0 mA 4.0 f = 1.0 kHz SOURCE RESISTANCE = 200 IC = 0.5 mA 3.0 SOURCE RESISTANCE = 2.0 k IC = 50 A 2.0 SOURCE RESISTANCE = 2.0 k IC = 100 A 1.0 0 0.1 0.2 0.4 IC = 1.0 mA 10 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.0 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 IC = 0.5 mA 8 6 4 IC = 50 A 2 IC = 100 A 0 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS) Figure 7. 40 100 Figure 8. h PARAMETERS (VCE = − 10 Vdc, f = 1.0 kHz, TA = 25°C) 100 hoe, OUTPUT ADMITTANCE ( mhos) h fe , DC CURRENT GAIN 300 200 100 70 50 70 50 30 20 10 7 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5 5.0 7.0 10 0.1 0.2 Figure 9. Current Gain h re , VOLTAGE FEEDBACK RATIO (X 10 −4 ) h ie , INPUT IMPEDANCE (k OHMS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 10. Output Admittance 20 0.3 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 5.0 7.0 10 0.1 Figure 11. Input Impedance 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 12. Voltage Feedback Ratio http://onsemi.com 4 MMBT3906LT1 h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 −55 °C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 13. DC Current Gain 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 14. Collector Saturation Region TJ = 25°C V, VOLTAGE (VOLTS) 0.8 V , TEMPERATURE COEFFICIENTS (mV/ °C) 1.0 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 1.0 0.5 0 +25°C TO +125°C −55 °C TO +25°C −0.5 +25°C TO +125°C −1.0 −55 °C TO +25°C VB FOR VBE(sat) −1.5 −2.0 200 VC FOR VCE(sat) 0 Figure 15. “ON” Voltages 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 Figure 16. Temperature Coefficients http://onsemi.com 5 180 200 MMBT3906LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AH A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−03 AND −07 OBSOLETE, NEW STANDARD 318−08. 3 1 V B S 2 DIM A B C D G H J K L S V G C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches Figure 17. SOT−23 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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