DIODES DMN2005LP4K

SPICE MODEL: DMN2005LP4K
DMN2005LP4K
NEW
NEW PRODUCT
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
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Low On-Resistance
Very Low Gate Threshold Voltage, 0.9V Max.
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
ESD Protected Gate
Ultra Low Profile Package
DFN1006H4-3
ESD protected
S
D
G
Mechanical Data
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TOP VIEW
Case: DFN1006H4-3
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating
94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish ⎯ NiPdAu annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking: See Page 4
Ordering & Date Code Information: See Page 4
Weight: 0.001 grams
G H
SIDE VIEW
A
Dim
Min
Max
Typ
A
0.95
1.075
1.00
B
0.55
0.675
0.60
C
0.45
0.55
0.50
D
0.20
0.30
0.25
G
—
0.40
—
H
0
0.05
0.02
K
0.10
0.20
0.15
L
0.20
0.30
0.25
M
—
—
0.35
N
—
—
0.40
All Dimensions in mm
Drain
K
M
B C
Body
Diode
Gate
N
L
D
BOTTOM VIEW
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
Drain Current per element (Note 1)
VGSS
V
Pd
±10
200
250
200
mW
RθJA
625
°C/W
Tj, TSTG
-65 to +150
°C
Continuous
Pulsed (Note 3)
ID
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
mA
Device mounted on FR-4 PCB.
No purposefully added lead.
Pulse width ≤10μS, Duty Cycle ≤1%.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30799 Rev. 2 - 2
1 of 4
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DMN2005LP4K
© Diodes Incorporated
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
20
⎯
⎯
V
VGS = 0V, ID = 100μA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
10
μA
VDS = 17V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
±5
μA
VGS = ±8V, VDS = 0V
VGS(th)
0.53
⎯
0.9
V
VDS = VGS, ID = 100μA
RDS (ON)
⎯
⎯
⎯
⎯
⎯
0.9
0.85
1.2
2.4
2.5
1.5
1.7
1.7
3.5
3.5
Ω
VGS = 4V, ID = 10mA
VGS = 2.7V, ID = 200mA
VGS = 2.5V, ID = 10mA
VGS = 1.8V, ID = 200mA
VGS = 1.5V, ID = 1mA
⏐Yfs⏐
40
⎯
⎯
mS
OFF CHARACTERISTICS (per element) (Note 5)
ON CHARACTERISTICS (per element) (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
VDS = 3V, ID = 10mA
Notes: 5. Short duration test pulse used to minimize self-heating effect.
2
VGS = 2.0V
1.8
o
Ta = 25 C
1.6
ID, DRAIN CURRENT (A)
NEW PRODUCT
Electrical Characteristics
TA = 150°C
VGS =1.8V
1.4
TA = 125°C
1.2
1
VGS = 1.6V
T A = 85 °C
T A = 25 °C
0.8
TA = 0°C
VGS = 1.4V
0.6
0.4
T A = -55°C
VGS = 1.2V
0.2
VGS = 1.0V
0
1
0
2
3
4
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Reverse Drain Current vs. Source-Drain Voltage
VDS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
TA = 150° C
TA = -55° C
TA = 85° C
TA = 0° C
TA = 25° C
ID, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-State Resistance vs. Drain Current
TA, AMBIENT TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs. Ambient Temperature
DS30799 Rev. 2 - 2
T A = 125°C
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DMN2005LP4K
© Diodes Incorporated
NEW PRODUCT
ID, DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
TA = 150° C
TA = 85°C
T A = 25°C
TA = -55° C
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Static Drain-Source, On-Resistance vs. Ambient Temperature
|YfS|, FORWARD TRANSFER ADMITTANCE (S)
VSD, DRAIN-SOURCE VOLTAGE (V)
Fig. 8 Reverse Drain Current vs. Source-Drain Voltage
f=1MHz
CT, CAPACITANCE (pF)
Ciss
Coss
Crss
ID, DRAIN CURRENT (A)
Fig. 9 Forward Transfer Admittance vs. Drain Current
DS30799 Rev. 2 - 2
3 of 4
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DMN2005LP4K
© Diodes Incorporated
NEW PRODUCT
Ordering Information (Note 6)
Notes:
Device
Packaging
Shipping
DMN2005LP4K-7
DFN1006H4-3
3000/Tape & Reel
For packaging details, please go to our website at http://www.diodes.com/ap02007.pdf.
Marking Information
DN = Product Type Marking Code
Dot Denotes Drain Side
DN
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30799 Rev. 2 - 2
4 of 4
www.diodes.com
DMN2005LP4K
© Diodes Incorporated