DMN601DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 2kV "Green" Device (Note 4) Case: SOT-26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.015 grams (approximate) • • • • • • Drain SOT-26 D2 G1 S1 S2 G2 D1 Body Diode Gate ESD protected up to 2kV Gate Protection Diode TOP VIEW Source TOP VIEW Internal Schematic Equivalent Circuit Per Element Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Units V V ID Value 60 ±20 305 800 Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Symbol Pd RθJA Value 225 556 Units mW °C/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Drain-Source Voltage Gate-Source Voltage Continuous Pulsed (Note 3) Drain Current (Note 1) Thermal Characteristics mA @TA = 25°C unless otherwise specified Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±10 V μA μA VGS = 0V, ID = 10μA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1.0 RDS (ON) ⎯ 2.5 2.4 4.0 V Static Drain-Source On-Resistance |Yfs| VSD 100 0.5 1.6 ⎯ ⎯ ⎯ ⎯ ⎯ 1.4 ms V VDS = 10V, ID = 1mA VGS = 10V, ID = 200mA VGS = 4V, ID = 200mA VDS =10V, ID = 200mA VGS = 0V, IS = 115mA Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 50 25 5.0 pF pF pF Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 1. 2. 3. 4. 5. Ω Test Condition VDS = 25V, VGS = 0V f = 1.0MHz Device mounted on FR-4 PCB. No purposefully added lead. Pulse width ≤10μS, Duty Cycle ≤1%. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. DMN601DMK Document number: DS30657 Rev. 4 - 2 1 of 4 www.diodes.com December 2007 © Diodes Incorporated ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 10 VDS = 10V ID = 1mA RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) VGS(TH), GATE THRESHOLD VOLTAGE (V) 2 Pulsed 1.5 1 0.5 0 -50 -25 25 50 75 100 125 0 Tch , CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 1 0.1 150 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 10 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT DMN601DMK 0 1 VGS, GATE-SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN601DMK Document number: DS30657 Rev. 4 - 2 2 of 4 www.diodes.com December 2007 © Diodes Incorporated IDR, REVERSE DRAIN CURRENT (A) RDS(ON), STATIC DRAIN-SOURCE ON-STATE RESISTANCE (Ω) 0 IDR, REVERSE DRAIN CURRENT (A) |Yfs|, FORWARD TRANSFER ADMITTANCE (S) TCH, CHANNEL TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature 1 Ordering Information Part Number DMN601DMK-7 Notes: 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current (Note 6) Case SOT-26 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information D2 G1 S1 K7K YM K7K YM NEW PRODUCT DMN601DMK S2 Date Code Key Year Code 2005 S 2006 T G2 K7K = Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September D1 2007 U 2008 V 2009 W 2010 X 2011 Y 2012 Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DMN601DMK Document number: DS30657 Rev. 4 - 2 3 of 4 www.diodes.com December 2007 © Diodes Incorporated DMN601DMK Package Outline Dimensions A NEW PRODUCT TOP VIEW B C H K M J D L F SOT-26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 F ⎯ ⎯ 0.55 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° α ⎯ All Dimensions in mm Suggested Pad Layout E Z E C G Dimensions Value (in mm) 3.20 Z 1.60 G X 0.55 0.80 Y C 2.40 0.95 E Y X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN601DMK Document number: DS30657 Rev. 4 - 2 4 of 4 www.diodes.com December 2007 © Diodes Incorporated