GP08A thru GP08J Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier application SUPERECTIFIER® structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current • High forward surge capability • Meets environmental standard MIL-S-19500 DO-204AL (DO-41) • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes application PRIMARY CHARACTERISTICS IF(AV) 0.8 A VRRM 50 V to 600 V IFSM 25 A IR 5.0 μA VF 1.3 V TJ max. 175 °C MECHANICAL DATA Case: DO-204AL, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL GP08A GP08B GP08D GP08G GP08J UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 V Maximum RMS voltage VRMS 35 70 140 280 420 V Maximum DC blocking voltage VDC 50 100 200 400 600 V Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA = 55 °C IF(AV) 0.8 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 25 A Maximum full load reverse current full cycle average 0.375" (9.5 mm) lead length at TA = 55 °C IR(AV) 30 μA TJ, TSTG - 65 to + 175 °C Operating junction and storage temperature range Document Number: 88636 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GP08A thru GP08J Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage 0.8 A SYMBOL GP08A GP08B VF TA = 25 °C Maximum DC reverse current at rated DC blocking voltage GP08D GP08G GP08J UNIT 1.3 V 5.0 IR TA = 125 °C μA 50 Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 2.0 μs Typical junction capacitance 4.0 V, 1 MHz CJ 8.0 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance RJA GP08A GP08B (1) GP08D GP08G GP08J UNIT 55 °C/W Note (1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE GP08J-E3/54 0.335 54 5500 13" diameter paper tape and reel GP08J-E3/73 0.335 73 3000 Ammo pack packaging GP08JHE3/54 (1) 0.335 54 5500 13" diameter paper tape and reel GP08JHE3/73 (1) 0.335 73 3000 Ammo pack packaging Note AEC-Q101 qualified (1) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 25 Peak Forward Surge Current (A) Average Forward Current (A) 1.0 0.8 0.6 0.4 60 Hz Resistive or Inductive Load 0.375" (9.5 mm) Lead Length 0.2 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 20 15 10 5.0 0 0 20 40 60 80 100 120 140 160 180 1 10 100 Ambient Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 88636 [email protected], [email protected], [email protected] Revision: 15-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GP08A thru GP08J Vishay General Semiconductor 100 TJ = 25 °C Pulse Width = 300 μs 1 % Duty Cycle Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 1 0.1 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 0.01 0.4 0.6 0.8 1.0 1.2 1 0.1 1.4 10 100 Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 Transient Thermal Impedance (°C/W) 10 Instantaneous Reverse Current (μA) 1 Instantaneous Forward Voltage (V) TJ = 100 °C 1 0.1 TJ = 25 °C 0.01 0 20 40 60 80 10 1 P.C.B. Mounted on 0.20" x 0.27" (5 mm x 7 mm) Copper Pad Areas 0.1 0.01 100 0.1 1 10 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Junction Capacitance 100 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AL (DO-41) 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) 1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA. Note 0.026 (0.66) • Lead diameter is for suffix “E” part numbers 0.023 (0.58) Document Number: 88636 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This datasheet is subject to change without notice. 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