PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX958 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. Static Forward Current Transfer Ratio hFE Transition Frequency fT 85 Output Capacitance Cobo Switching Times ton toff 100 100 10 TYP. MAX. UNIT CONDITIONS. -690 -800 mV IC=-500mA, VCE=-10V* 200 200 20 300 IC=-10mA, VCE=-10V* IC=-500mA, VCE=-10V* IC=-1A, VCE=-10V* MHz IC=-100mA, VCE=-10V f=50MHz 19 pF VCB=-20V, f=1MHz 104 2400 ns ns IC=-500mA, IB1=-50mA IB2=50mA, VCC=-100V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. UNIT Rth(j-amb) Rth(j-case) 150 50 °C/W °C/W Thermal Resistance: Junction to Ambient Junction to Case ZTX958 ISSUE 3 JUNE 94 FEATURES * 0.5 Amp continuous current * Up to 1.5 Amps peak current * Very low saturation voltage * Excellent gain characteristics up to 1 Amp * Spice model available C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage VCEO -400 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current ICM -1.5 A Continuous Collector Current IC -0.5 A Practical Power Dissipation* Ptotp 1.58 W Power Dissipation at Tamb=25°C Ptot 1.2 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum 4.0 3.0 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) Ca se 2.0 te m pe ra tu re Amb ient te mpe ratu 1.0 -40 -20 0 20 40 re 60 80 100 120 140 160 180 200 D.C. 150 t1 100 D=t1/tP tP D=0.6 50 D=0.2 D=0.1 0 0.0001 D=0.05 Single Pulse 0.001 0.01 0.1 1 10 SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO -400 -600 V IC=-100µA Collector-Emitter Breakdown Voltag V(BR)CER -400 -600 V IC=-1µA, RB ≤1KΩ Collector-Emitter Breakdown Voltage V(BR)CEO -400 -550 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -6 -8 V IE=-100µA Collector Cut-Off Current ICBO -50 -1 µA nA VCB=-300V VCB=-300V, Tamb=100°C Collector Cut-Off Current ICER R ≤1KΩ -50 -1 µA nA VCB=-300V VCB=-300V, Tamb=100°C Emitter Cut-Off Current IEBO -10 nA VEB=-6V Collector-Emitter Saturation Voltage VCE(sat) -100 -150 -300 -150 -200 -400 mV mV mV IC=-10mA, IB=-1mA* IC=-100mA, IB=-10mA* IC=-500mA, IB=-100mA* Base-Emitter Saturation Voltage VBE(sat) -790 -900 mV IC=-500mA, IB=-100mA* 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-331 PARAMETER 3-330 MAX. UNIT CONDITIONS. PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX958 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. Static Forward Current Transfer Ratio hFE Transition Frequency fT 85 Output Capacitance Cobo Switching Times ton toff 100 100 10 TYP. MAX. UNIT CONDITIONS. -690 -800 mV IC=-500mA, VCE=-10V* 200 200 20 300 IC=-10mA, VCE=-10V* IC=-500mA, VCE=-10V* IC=-1A, VCE=-10V* MHz IC=-100mA, VCE=-10V f=50MHz 19 pF VCB=-20V, f=1MHz 104 2400 ns ns IC=-500mA, IB1=-50mA IB2=50mA, VCC=-100V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. UNIT Rth(j-amb) Rth(j-case) 150 50 °C/W °C/W Thermal Resistance: Junction to Ambient Junction to Case ZTX958 ISSUE 3 JUNE 94 FEATURES * 0.5 Amp continuous current * Up to 1.5 Amps peak current * Very low saturation voltage * Excellent gain characteristics up to 1 Amp * Spice model available C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage VCEO -400 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current ICM -1.5 A Continuous Collector Current IC -0.5 A Practical Power Dissipation* Ptotp 1.58 W Power Dissipation at Tamb=25°C Ptot 1.2 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum 4.0 3.0 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) Ca se 2.0 te m pe ra tu re Amb ient te mpe ratu 1.0 -40 -20 0 20 40 re 60 80 100 120 140 160 180 200 D.C. 150 t1 100 D=t1/tP tP D=0.6 50 D=0.2 D=0.1 0 0.0001 D=0.05 Single Pulse 0.001 0.01 0.1 1 10 SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V(BR)CBO -400 -600 V IC=-100µA Collector-Emitter Breakdown Voltag V(BR)CER -400 -600 V IC=-1µA, RB ≤1KΩ Collector-Emitter Breakdown Voltage V(BR)CEO -400 -550 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -6 -8 V IE=-100µA Collector Cut-Off Current ICBO -50 -1 µA nA VCB=-300V VCB=-300V, Tamb=100°C Collector Cut-Off Current ICER R ≤1KΩ -50 -1 µA nA VCB=-300V VCB=-300V, Tamb=100°C Emitter Cut-Off Current IEBO -10 nA VEB=-6V Collector-Emitter Saturation Voltage VCE(sat) -100 -150 -300 -150 -200 -400 mV mV mV IC=-10mA, IB=-1mA* IC=-100mA, IB=-10mA* IC=-500mA, IB=-100mA* Base-Emitter Saturation Voltage VBE(sat) -790 -900 mV IC=-500mA, IB=-100mA* 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-331 PARAMETER 3-330 MAX. UNIT CONDITIONS. ZTX958 TYPICAL CHARACTERISTICS Tamb=25°C IC/IB=5 1.6 VCE(sat) - (Volts) VCE(sat) - (Volts) 1.2 1.0 0.8 0.6 1.2 1.0 0.8 0.6 0.2 0.2 0.01 0.1 1 0.001 0.1 1 IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 10 20 VCE=10V 0.8 0.6 100 0.4 VBE(sat) - (Volts) 200 1.0 -55°C +25°C +100°C +175°C 1.6 300 1.2 1.4 IC/IB=10 1.2 1.0 0.8 0.6 0.4 0.2 0.2 0 0.001 0.01 0.1 10 20 1 0 0.001 1 hFE v IC VBE(sat) v IC IC - Collector Current (Amps) 1.4 0.1 IC - Collector Current (Amps) -55°C +25°C +100°C +175°C 1.6 0.01 IC - Collector Current (Amps) VCE=10V 1.2 1.0 0.8 0.6 0.4 10 20 Single Pulse Test at Tamb=25°C 10 VBE - (Volts) 0.01 IC - Collector Current (Amps) +100°C +25°C -55°C 1.4 0 10 20 hFE - Typical Gain 0.001 1.6 hFE - Normalised Gain 1.4 0.4 0.4 0 IC/IB=5 -55°C +25°C +175°C 1.6 IC/IB=20 1.4 1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0.1 0.2 0 0.001 0.01 0.1 1 10 20 0.01 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-332 1000