NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX658 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Transition Frequency fT TYP. MAX. UNIT 50 Collector-Base Breakdown Voltage Cobo Switching times ton toff 10 130 3300 CONDITIONS. MHz IC=20mA, VCE=20V f=20MHz pF VCB=20V, f=1MHz ns ns IC=100mA, VC=100V IB1=10mA, IB2=-20mA * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. UNIT 175 116 70 °C/W °C/W °C/W Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case Thermal Resistance (°C/W) Max Power Dissipation - (Watts) C 1.5 Am 1.0 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 1 A Continuous Collector Current IC 500 mA Power Dissipation at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/ °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C UNIT CONDITIONS. 400 V IC=100µ A Collector-Emitter Breakdown Voltage V(BR)CEO) 400 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A Collector Cut-Off Current ICBO 100 nA VCB=320V D=0.5 Collector Cut-Off Current ICBO 100 nA VCE=320V D=0.2 Emitter Cut-Off Current IEBO 100 nA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.3 0.25 0.5 V V V IC=20mA, IB=1mA IC=50mA, IB=5mA* IC=100mA, IB=10mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=100mA, IB=10mA* Base-Emitter Turn On Voltage VBE(on) 0.9 V IC=100mA, VCE=5V* D=t1/tP Single Pulse 0.001 0.01 0.1 1 10 TYP. 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance Static Forward Current hFE Transfer Ratio 3-230 E-Line TO92 Compatible V(BR)CBO D=0.1 0 0.0001 E SYMBOL MIN. tP 100 C B Collector-Base Breakdown Voltage D=1 (D.C.) t1 APPLICATIONS * Telephone dialler circuits PARAMETER 200 2.0 ISSUE 1 APRIL 94 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 2.5 ZTX658 50 50 40 MAX. IC=1mA, VCE=5V* IC=100mA, VCE=5V* IC=200mA, VCE=10V* 3-229 NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX658 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Transition Frequency fT TYP. MAX. UNIT 50 Collector-Base Breakdown Voltage Cobo Switching times ton toff 10 130 3300 CONDITIONS. MHz IC=20mA, VCE=20V f=20MHz pF VCB=20V, f=1MHz ns ns IC=100mA, VC=100V IB1=10mA, IB2=-20mA * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. UNIT 175 116 70 °C/W °C/W °C/W Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case Thermal Resistance (°C/W) Max Power Dissipation - (Watts) C 1.5 Am 1.0 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 1 A Continuous Collector Current IC 500 mA Power Dissipation at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/ °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C UNIT CONDITIONS. 400 V IC=100µ A Collector-Emitter Breakdown Voltage V(BR)CEO) 400 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A Collector Cut-Off Current ICBO 100 nA VCB=320V D=0.5 Collector Cut-Off Current ICBO 100 nA VCE=320V D=0.2 Emitter Cut-Off Current IEBO 100 nA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.3 0.25 0.5 V V V IC=20mA, IB=1mA IC=50mA, IB=5mA* IC=100mA, IB=10mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=100mA, IB=10mA* Base-Emitter Turn On Voltage VBE(on) 0.9 V IC=100mA, VCE=5V* D=t1/tP Single Pulse 0.001 0.01 0.1 1 10 TYP. 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance Static Forward Current hFE Transfer Ratio 3-230 E-Line TO92 Compatible V(BR)CBO D=0.1 0 0.0001 E SYMBOL MIN. tP 100 C B Collector-Base Breakdown Voltage D=1 (D.C.) t1 APPLICATIONS * Telephone dialler circuits PARAMETER 200 2.0 ISSUE 1 APRIL 94 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 2.5 ZTX658 50 50 40 MAX. IC=1mA, VCE=5V* IC=100mA, VCE=5V* IC=200mA, VCE=10V* 3-229 ZTX658 TYPICAL CHARACTERISTICS 1.4 IC/IB=10 IC/IB=20 IC/IB=50 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 1.4 1.2 1.0 0.8 0.6 0.4 0.01 0.1 1 10 0 0.001 20 +100°C +25°C -55°C -55°C +25°C +100°C +175°C VCE=10V 1.6 300 200 0.6 100 0.4 1.4 IC/IB=10 1.0 0.8 0.6 0.4 0.2 0.01 0.1 0 0.001 10 20 1 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC VCE=10V 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.1 1 10 20 IC - Collector Current (Amps) -55°C +25°C +100°C +175°C 10 Single Pulse Test at Tamb=25°C 1.0 VBE - (Volts) 20 1.2 0.2 0 0.001 10 VCE(sat) v IC 0.8 1.4 1 VCE(sat) v IC 1.0 1.6 0.1 IC - Collector Current (Amps) 1.2 0 0.001 0.01 IC - Collector Current (Amps) VBE(sat) - (Volts) hFE - Normalised Gain 1.6 IC/IB=10 0.2 hFE - Typical gain 0 0.001 -55°C +25°C +100°C +175°C Tamb=25°C VCE(sat) - (Volts) VCE(sat) - (Volts) 1.6 0.1 0.01 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0.001 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-231 1000 20